LTC7001 Fast 150V High Side NMOS Static Driver

Features Description nn ® Wide Operating VIN: Up to 135V (150V Abs Max) The LTC 7001 is a fast high side N-channel MOSFET gate nn 1Ω Pull-Down, 2.2Ω Pull-Up for Fast Turn-On and driver that operates from input voltages up to 135V. It Turn-Off Times contains an internal charge pump that fully enhances an nn 35ns Propagation Delays external N-channel MOSFET switch, allowing it to remain nn Internal Charge Pump for 100% Duty Cycle on indefinitely. nn Adjustable Turn-On Slew Rate Its powerful driver can easily drive large gate capacitances nn Supply from 3.5V to 15V with very short transition times, making it well suited for nn Adjustable V Overvoltage Lockout IN both high frequency switching applications or static switch nn Adjustable Driver Supply V Undervoltage Lockout CC applications that require a fast turn-on and/or turn-off time. nn CMOS Compatible Input nn Thermally Enhanced, High Voltage Capable 10-Lead The LTC7001 is available in the thermally enhanced 10-lead MSOP Package MSOP package.

L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Analog Applications Devices, Inc. All other trademarks are the property of their respective owners. nn Static Switch Driver nn Load and Supply Switch Driver nn Electronic Valve Driver nn High Frequency High Side Gate Driver

Typical Application

High Voltage, High Side Switch with 100% Duty Cycle LTC7001 Driving a 1nF Capacitive Load

VIN 0V TO 135V VCC 3.5V TO 15V VCC TGUP VINP LTC7001 2V/DIV TGDN OFF ON INP BST V 0.1µF CCUV V LOAD TG-TS OVLO TS 5V/DIV GND 0V TO 135V 7001 TA01a

10ns/DIV 7001 TA01b

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For more information www.linear.com/LTC7001 1 LTC7001 Absolute Maximum Ratings (Note 1) Supply Voltages OVLO Voltage ...... –0.3V to 6V BST-TS...... –0.3V to 15V Operating Junction Temperature Range (Notes 2, 3, 4) VCC...... –0.3V to 15V LTC7001E, LTC7001I, ...... –40°C to 125°C TS Voltage...... –6V to 150V LTC7001H,...... –40°C to 150°C BST Voltage ...... –0.3V to 150V LTC7001MP...... –55°C to 150°C INP Voltage...... –6V to 15V Storage Temperature Range...... –65°C to 150°C Driver Outputs TGUP, TGDN...... (Note 6) Lead Temperature (Soldering, 10 sec) VCCUV Voltage...... –0.3 to 6V MSOP Package...... 300°C

Pin Configuration

TOP VIEW

VCC 1 10 N/C V 2 9 BST CCUV 11 GND 3 8 TS GND INP 4 7 TGUP OVLO 5 6 TGDN MSE PACKAGE 10-LEAD PLASTIC MSOP TJMAX = 150°C, θJA = 45°C/W, θJC = 10°C/W EXPOSED PAD (PIN 11) IS GND, MUST BE SOLDERED TO PCB

Order Information http://www.linear.com/product/LTC7001#orderinfo

LEAD FREE FINISH TAPE AND REEL PART MARKING* PACKAGE DESCRIPTION TEMPERATURE RANGE LTC7001EMSE#PBF LTC7001EMSE#TRPBF 7001 10-Lead Plastic MSOP –40°C to 125°C LTC7001IMSE#PBF LTC7001IMSE#TRPBF 7001 10-Lead Plastic MSOP –40°C to 125°C LTC7001HMSE#PBF LTC7001HMSE#TRPBF 7001 10-Lead Plastic MSOP –40°C to 150°C LTC7001MPMSE#PBF LTC7001MPMSE#TRPBF 7001 10-Lead Plastic MSOP –55°C to 150°C Consult LTC Marketing for parts specified with wider operating temperature ranges. *Temperature grades are identified by a label on the shipping container. For more information on lead free part marking, go to: http://www.linear.com/leadfree/ For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/. Some packages are available in 500 unit reels through designated sales channels with #TRMPBF suffix.

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E lectrical Characteristics The l denotes the specifications which apply over the specified operating junction temperature range, otherwise specifications are at TA = 25°C (Note 2). VCC = VBST = 10V, VTS = GND = 0V, unless otherwise noted.

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Input Supplies TS Operating Voltage Range 0 135 V

VCC Supply Current (Note 5) VBST-TS = 13V ON Mode VINP = 4V 27 50 µA Sleep Mode VINP = 0.4V 27 50 μA

VCC Undervoltage Lockout VCCUV = OPEN l VCC Rising 6.5 7.0 7.5 V l VCC Falling 5.8 6.4 6.9 V Hysteresis 600 mV

VCCUV = 0V l VCC Rising 3.1 3.5 3.7 V l VCC Falling 2.8 3.2 3.4 V Hysteresis 300 mV VCCUV = 1.5V VCC Rising 9.7 10.5 10.9 V VCC Falling 9.1 9.9 10.3 V Hysteresis 600 mV Bootstrapped Supply (BST-TS)

VBST-TS VTG Above VTS with INP = 3V (DC) VCC = VTS = 7V, IBST = 0µA 9 11 14 V l VCC = VTS = 10V, IBST = 0µA 10 12 14 V l VTS = 135V, IBST = 0µA 10 12 14 V l Charge Pump Output Current VTS = 20V, VBST-TS = 10V –15 –30 µA

BST-TS Floating UVLO VBST-TS Rising 3.1 V VBST-TS Falling 2.8 V Output Gate Driver (TG) l TG Pull-Up Resistance VCC = VBST = 12V 2.2 7 Ω l TG Pull-Down Resistance VCC = VBST = 12V 1 4 Ω tr Output Rise Time 10% to 90%, CL = 1nF 13 ns 10% to 90%, CL = 10nF 90 ns tf Output Fall Time 10% to 90%, CL = 1nF 13 ns 10% to 90%, CL = 10nF 40 ns l tPLH Input to Output Propagation Delay VINP Rising, CL = 1nF 35 70 ns l tPHL VINP Falling, CL = 1nF 35 70 ns Operation l VIH Input Threshold Voltages VINP Rising 1.7 2 2.2 V l VIL VINP Falling 1.3 1.6 1.8 V Hysteresis 400 mV

Input Pull-Down Resistance VINP = 1V 1 MΩ OVLO Pin Threshold Voltage Rising 1.16 1.21 1.26 V Falling 1.05 1.10 1.15 V Hysteresis 110 mV

OVLO Pin Leakage Current VOVLO = 1.3V –100 0 100 nA

VVCCUV Pull-Up Current VVCCUV = 1V –11.3 –10 8.7 µA

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For more information www.linear.com/LTC7001 3 LTC7001 Electrical Characteristics

Note 1: Stresses beyond those listed under Absolute Maximum Ratings Note 3: The junction temperature (TJ, in °C) is calculated from the ambient may cause permanent damage to the device. Exposure to any Absolute temperature (TA, in °C) and power dissipation (PD, in Watts) according to Maximum Rating condition for extended periods may affect device the formula: reliability and lifetime. TJ = TA + (PD • θJA), where θJA is 45°C/ W. Note 2: The LTC7001 is tested under pulsed load conditions such that Note 4: This IC includes over temperature protection that is intended to TJ ≈ TA. The LTC7001E is guaranteed to meet performance specifications protect the device during momentary overload conditions. The maximum from 0°C to 85°C. Specifications over the –40°C to 125°C operating rated junction temperature will be exceeded when this protection is active. junction temperature range are assured by design, characterization and Operation above the specified absolute maximum operating junction correlation with statistical process controls. The LTC7001I is guaranteed temperature may impair device reliability or permanently damage the over the –40°C to 125°C operating junction temperature range, the device. LTC7001H is guaranteed over the –40°C to 150°C operating junction Note 5: Dynamic supply current is higher due to the gate charge being temperature range and the LTC7001MP is tested and guaranteed over the delivered at the switching frequency. See Applications Information. –55°C to 150°C operating junction temperature range. Note 6: Do not apply a voltage or current source to these pins. They must High junction temperatures degrade operating lifetimes; operating lifetime be connected to capacitive loads only; otherwise permanent damage may is derated for junction temperatures greater than 125°C. Note that the occur. maximum ambient temperature consistent with these specifications is determined by specific operating conditions in conjunction with board layout, the rated package thermal impedance and other environmental factors.

Typical Performance Characteristics TA = 25°C, unless otherwise noted.

VCC Supply Current vs VCC Supply Driver On Resistance vs VBST-TS Input Threshold Voltage vs VCC Voltage Voltage Supply Voltage 50 6 3.0 V = 0V V = V V = 0V VBST-TS = 13V CCUV TGUP IN CC RISING CCUV TGDN FALLING 5 2.5 40

4 2.0 30 (Ω) 3 1.5 DSON

20 R 2 1.0 SUPPLY CURRENT (µA) SUPPLY CC THRESHOLD VOLTAGE (V) THRESHOLD VOLTAGE V 10 1 0.5

0 0 0 3 6 9 12 15 3 6 9 12 15 3 6 9 12 15 VCC VOLTAGE (V) VBST-TS (V) VCC VOLTAGE (V) 7001 G01 7001 G02 7001 G03

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Typical Performance Characteristics TA = 25°C, unless otherwise noted.

Charge Pump No-Load Output Charge Pump Output Current vs Voltage vs VTS Charge Pump Load Regulation VTS 14 15 5 VCC = 4V VTS = 4V VCC = 7V 12 13 VTS = 6V VBST-TS = 10V VTS = 8V –5 11 10 VTS = 10V 9 VTS = 12V

(V) –15 8 (V) TS TS

7 (µA) -V - V BST

6 I BST

BST –25 V

V 5 VCC = 4V 4 VCC = 5V 3 VCC = 6V –35 2 VCC = 7V 1 25°C IBST = 0µA VCC ≥ 8V 150°C 0 –1 –45 0 5 10 15 20 0 –20 –40 –60 –80 0 28 56 84 112 140 VTS (V) IBST (µA) VTS (V) 7001 G04 7001 G05 7001 G6

OVLO Threshold Voltage vs Driver On Resistance vs Temperature VCCUV Lockout vs Temperature Temperature 1.25 8.0 4 VCCUV = OPEN RISING VBST–TS = 12V TGUP FALLING TGDN 7.5 1.20 3 7.0

1.15 6.5 2 LOCKOUT (V) CCUV 6.0 (Ω) RESISTANCE V

THRESHOLD VOLTAGE (V) THRESHOLD VOLTAGE 1.10 1 5.5 RISING FALLING 1.05 5.0 0 –50 0 50 100 150 –50 0 50 100 150 –50 0 50 100 150 TEMPERATURE (°C) TEMPERATURE (°C) TEMPERATURE (°C) 7001 G07 7001 G08 7001 G09

VCC Supply Current vs Input Threshold Voltage vs VBST-TS Floating UVLO Voltage vs Temperature Temperature Temperature 40 3.0 4.0 VIN = 10V VIN = 10V RISING RISING FALLING FALLING 2.5 35 3.5 2.0 30 1.5 3.0 25

CURRENT (µA) 1.0 THRESHOLD VOLTAGE (V) THRESHOLD VOLTAGE THRESHOLD VOLTAGE (V) THRESHOLD VOLTAGE 2.5 20 0.5

15 0 2.0 –50 0 50 100 150 –50 0 50 100 150 –50 0 50 100 150 TEMPERATURE (°C) TEMPERATURE (°C) TEMPERATURE (°C) 7001 G10 7001 G11 7001 G12

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For more information www.linear.com/LTC7001 5 LTC7001 Pin Functions

VCC (Pin 1): Main Supply Pin. A bypass with a to be pulled to TS. Normal operation resumes when the minimum value of 0.1µF should be tied between this pin voltage on this pin decreases below 1.11V. OVLO should and GND. be tied to GND when not used.

VCCUV (Pin 2): VCC Supply Undervoltage Lockout. A TGDN (Pin 6): High Current Gate Driver Pull-Down. This on this pin sets the reference for the Gate Drive pin pulls down to TS. For the fastest turn-off, tie this pin undervoltage lockout. The voltage on this pin in the range directly to the gate of the external high side MOSFET. of 0.5V to 1.5V is multiplied by seven to be the undervolt- TGUP (Pin 7): High Current Gate Driver Pull-Up. This age lockout for the Gate Drive (V pin). Short to ground CC pin pulls up to BST. Tie this pin to TGDN for maximum to set the minimum gate drive UVLO of 3.5V. Leave open gate drive transition speed. A resistor can be connected to set gate drive UVLO to 7.0V between this pin and the gate of the external MOSFET to GND (Pin 3, Exposed Pad Pin 11): Ground. The exposed control the inrush current during turn-on. See Applications paddle must be soldered to the PCB for rated electrical Information. and thermal performance. TS (Pin 8): Top (High Side) source connection or GND if INP (Pin 4): Input Signal. CMOS compatible input refer- used in ground referenced applications. ence to GND that sets the state of TGDN and TGUP pins BST (Pin 9): High Side Bootstrapped Supply. An external (see Applications Information). INP has an internal 1MΩ capacitor with a minimum value of 0.1µF should be tied pull-down to GND to keep TGDN pulled to TS during between this pin and TS. Voltage swing on this pin is 12V startup transients. to (VTS + 12V). OVLO (Pin 5): Overvoltage Lockout Input. Connect to the NC (Pin 10): No Connect. This pin should be floated. input supply through a resistor divider to set the lockout level. A voltage on this pin above 1.21V causes TGDN

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6 For more information www.linear.com/LTC7001 LTC7001 Block Diagram

VIN 135V ABS MAX

D1* BST 9

PCH CB 0.1µ TGUP 7 CHARGE LEVEL TGDN M1 PUMP SHIFT 6 UP NCH V VCC TS CC 1 3.5V TO 15V 8 LOAD 2.3V + 10µA

VCCUV NC 10 2 –

OVLO 5 – LOGIC

1.21V +

INP 4

1M 3 GND

7001 BD *OPTIONAL

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For more information www.linear.com/LTC7001 7 LTC7001 Timing Diagram

INPUT RISE/FALL TIME < 10ns

INPUT (INP) VIH VIL

90% OUTPUT (TG-TS) 10%

tr tf tPLH tPHL 7001 TD

Operation (Refer to Block Diagram)

The LTC7001 is designed to receive a ground-referenced, junction temperature reaches approximately 180°C, the low voltage digital input signal, INP and quickly drive a LTC7001 will enter thermal shutdown mode and TGDN will high side N-channel power MOSFET whose drain can be be pulled to TS. After the part has cooled below 160°C, up to 150V above ground. The LTC7001 is capable of driv- TGDN will be allowed to go back high. The overtemperature ing a 1nF load using a 12V bootstrapped supply voltage level is not production tested. The LTC7001 is guaranteed (VBST–VTS) with 35ns of propagation delay and fast rise/fall to start at temperatures below 150°C. times. The high gate drive voltage reduces external power The LTC7001 additionally implements protection fea- losses associated with external MOSFET on-resistance. tures which prohibit TGDN from going high when VCC or The strong drivers not only provide fast turn on and off (V –V ) are not within proper operating ranges. By times but hold the TGUP and TGDN to TS voltages in the BST TS using a resistive divider from VIN to ground the OVLO pin desired state in the presence of high slew rate transients can serve as a precise input supply voltage overvoltage which can occur driving inductive loads at high voltages. lockout. TGDN is pulled to TS when OVLO rises above 1.21V, so OVLO can be configured to limit switching to a Internal Charge Pump specific range on input supply voltages. The LTC7001 contains an internal charge pump that V contains an undervoltage lockout feature that will enables the MOSFET gate drive to have 100% duty cycle. CC pull TGDN to TS and is configured by the V pin. If The charge pump regulates the BST-TS voltage to 12V CCUV V is open, TGDN is pulled to TS until V is greater reducing external power losses associated with external CCUV CC than 7.0V. By using a resistor from V to ground, the MOSFET on-resistance. The charge pump uses the higher CCUV rising undervoltage lockout on V can be adjusted from voltage of TS or V as the source for the charge. CC CC 3.5V to 10.5V. Protection Circuitry An additional internal undervoltage lockout is included When using the LTC7001, care must be taken not to exceed that will pull TGDN to TS when the floating voltage from any of the ratings specified in the Absolute Maximum BST to TS is less than 3.1V (typical). Ratings section. As an added safeguard, the LTC7001 incorporates an overtemperature shutdown feature. If the

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8 For more information www.linear.com/LTC7001 LTC7001 Applications Information

Input Stage LTC7001

The LTC7001 employs CMOS compatible input thresholds BST that allow a low voltage digital signal connected to INP to 12V + + 2.2Ω drive standard power . The LTC7001 contains AV = 1 – – TGUP an internal which biases the input buffer CHARGE PUMP TGDN connected to INP allowing the input thresholds (V = 2.0V, VCC 30µA IH 1Ω VIL = 1.6V) to be independent of variations in VCC. The HIGH 400mV hysteresis between V and V eliminates false SPEED TS IH IL INP 150V triggering due to noise events. However, care should be LEVEL SHIFTER taken to keep INP from any noise pickup, especially in high frequency, high voltage applications. 7001 F01

INP also contains an internal 1MΩ pull-down resistor to Figure 1. Simplified Output Stage ground, keeping TGDN pulled to TS during startup and other unknown transient events. INP has an Absolute Maximum of –6V to +15V which External Overvoltage Lockout allows the signal driving INP to have voltage excursions The OVLO pin can be configured as a precise overvoltage outside the normal power supply and ground range. It is (OVLO) lockout on the VIN supply with a resistive divider not uncommon for signals routed with long PCB traces from VIN to ground. A simple resistive divider can be used and driven with fast rise/fall times to inductively ring to as shown in Figure 2 to meet specific VIN voltage require- voltages higher than power supply or lower than ground. ments. When OVLO is greater than 1.21V, TGDN will be pulled to TS and the external MOSFET will be turned off. Output Stage

A simplified version of the LTC7001 output stage is VIN shown in Figure 1. The pull-down device is an N-channel MOSFET with a typical 1Ω RDS(ON) and the pull-up device R4 LTC7001 is a P-channel MOSFET with a typical 2.2Ω RDS(ON). The pull-up and pull-down pins have been separated to allow OVLO 7001 F02 the turn-on transient to be controlled while maintaining R5D5 a fast turn-off.

The LTC7001 powerful output stage (1Ω pull-up and Figure 2. Adjustable OV Lockout 2.2Ω pull-down) minimizes transition losses when driv- ing external MOSFETs and keeps the MOSFET in the state commanded by INP even if high voltage and high frequency The current that flows through the R4 – R5 divider will transients couple from the power MOSFET back to the directly add to the current drawn from VIN and care should driving circuitry. be taken to minimize the impact of this current on the overall The large gate drive voltage on TGUP and TGDN reduces current used by the application circuit. Resistor values in the megaohm range may be required to keep the impact conduction losses in the external MOSFET because RDS(ON) of the quiescent shutdown and sleep currents low. To pick is inversely proportional to its gate overdrive (VGS – VTH). resistor values, the sum total of R4 + R5 (RTOTAL) should

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For more information www.linear.com/LTC7001 9 LTC7001 Applications Information be chosen first based on the allowable DC current that drive level and the type of external MOSFET used. For can be drawn from VIN. The individual values of R4 and most applications, a capacitor value of 0.1µF for CB will R5 can then be calculated from the following equations: be sufficient. However, the following relationship for CB 1.21V should be maintained: R5 = R • TOTAL 10 •External MOSFET Q Rising VIN OVLO Threshold G CB > 1V R4 = RTOTAL – R5 The internal charge pump that charges the BST-TS supply For applications that do not need a precise external OVLO outputs approximately 30µA to the BST pin. If the time to the OVLO pin is required to be tied directly to ground. charge the external bootstrapped capacitor, CB from initial Be aware that the OVLO pin cannot be allowed to exceed power-up with the internal charge pump is not sufficient its absolute maximum rating of 6V. To keep the voltage on for the application, a low reverse leakage external silicon the OVLO pin from exceeding 6V, the following relationship , D1 with a reverse voltage rating greater than VIN should be satisfied: connected between VCC and BST should be used as shown in Figure 3. An external silicon diode between VCC and BST  R5  should be used if the following relationship cannot be met: VIN(MAX) •   < 6V  R4 +R5 BST Diode Required if C • 12V If the VIN(MAX) relationship for the OVLO pin cannot be < BST ≅ 40ms Power-Up to INP Going High satisfied, an external 5V should also be 30µA placed from OVLO to ground in addition to any lockout setting .

VCC Bootstrapped Supply (BST-TS) LTC7001 D1 An external bootstrapped capacitor, C , connected between BST B C BST and TS supplies the gate drive voltage for the MOSFET B TS driver. The LTC7001 keeps the BST-TS supply charged 7001 F03 with an internal charge pump, allowing for duty cycles up to 100 %. When the high side external MOSFET is to Figure 3. External BST Diode be turned on, the driver places the CB voltage across the gate-source of the MOSFET. This enhances the high side MOSFET and turns it on. The source of the MOSFET, TS, Another reason to use an external silicon diode between rises to VIN and the BST pin follows. With the high side VCC and BST is if the external MOSFET is switched at MOSFET on, the BST voltage is above the input supply; frequency so high that the BST-TS supply collapses. An VBST = VTS + 12V. The boost capacitor, CB, supplies the external silicon diode between VCC and BST should be charge to turn on the external MOSFET and needs to used if the following relationship cannot be met: have at least 10 times the charge to turn on the external MOSFET fully. The charge to turn on the external MOSFET BST Diode Required if 30µA is referred to gate charge, Q , and is typically specified in > ≅ 500Hz G Switching Frequency 2 •MOSFET QG the external MOSFET data sheet. Gate charge can range from 5nC to hundreds nCs and is influenced by the gate

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10 For more information www.linear.com/LTC7001 LTC7001 Applications Information

A Schottky diode should not be used between VCC and BST, MOSFET Selection because the reverse leakage of the Schottky diode at hot The most important parameters in high voltage applications will be more current than the charge pump can overcome. for MOSFET selection are the breakdown voltage BVDSS, Some example silicon with low leakage include: on-resistance RDS(ON) and the safe operating area, SOA. • MMBD1501A, Fairchild Semiconductor The MOSFET, when off, will see the full input range of the • CMPD3003, Central Semiconductor input power supply plus any additional ringing than can occur when driving an inductive load. VCC Undervoltage Comparator External conduction losses are minimized when using low The LTC7001 contains an adjustable undervoltage lockout RDS(ON) MOSFETs. Since many high voltage MOSFETs have (UVLO) on the VCC voltage that pulls TGDN to TS and can higher threshold voltages (typical VTH ≥ 5V) and RDS(ON) be easily programmed using a resistor (RVCCUV) between is directly related to the (VGS–VTH) of the MOSFET, the the VCCUV pin and ground. The voltage generated on VCCUV LTC7001 maximum gate drive of greater than 10V makes by RVCCUV and the internal 10µA current source set the VCC it an ideal solution to minimize external conduction losses UVLO. The rising VCC UVLO is internally limited within the associated with external high voltage MOSFETs. range of 3.5V and 10.5V. If VCCUV is open the rising VCC SOA is specified in Typical Characteristic curves in power UVLO is set internally to 7.0V. The value of resistor for a N-channel MOSFET data sheets. The SOA curves show particular rising V UVLO can be selected using Figure 4 CC the relationship between the voltages and current allowed or the following equation: in a timed operation of a power MOSFET without causing Rising V UVLO damage to the MOSFET. R = CC DRVUV 70µA Limiting Inrush Current During Turn-On Where 3.5V < Rising VCC UVLO < 10.5V. Large capacitive loads such as complex electrical systems with large bypass should be driven using the circuit shown in Figure 5. The pull-up gate drive to the 11 10 power MOSFET from TGUP is passed through an RC delay 9 network, RG and CG, which greatly reduces the turn-on 8 ramp rate of the MOSFET. Since the MOSFET source volt- 7 age follows the gate voltage, the load is powered smoothly 6 from ground. This dramatically reduces the inrush current

UVLO (V) 5

CC from the source supply and reduces the transient ramp V 4 3 rate of the load, allowing for slower activation of sensitive 2 electrical loads. The turn-off of the MOSFET is not affected 1 RISING VCC UVLO by the R delay network as the pull-down for the MOSFET FALLING VCC UVLO C 0 0 30 60 90 120 150 180 210 240 gate is directly from the TGDN pin. Note that the voltage VCCUV RESISTOR TO GROUND (kΩ) rating on capacitor C needs to be the same or higher 7001 F04 G than the external MOSFET and CLOAD. Figure 4. VCCUV Resistor Selection

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For more information www.linear.com/LTC7001 11 LTC7001 Applications Information

Adding CG to the gate of the external MOSFET can cause When CG is added to the circuit in Figure 5, the value of high frequency oscillation. A low power, low ohmic value the bootstrap capacitor, CB, must be increased to be able resistor (10Ω) should be placed in series with CG to to supply the charge to both to MOSFET gate and capacitor dampen the oscillations as shown in Figure 5 whenever CG. The relationship for CB that needs to be maintained CG is used in an aplication. Alternatively, the low ohmic when CG is used is given by: value resistor can be placed in series with the gate of the 10 •MOSFET QG external MOSFET. CB > +10 • CG 1V

VIN Optional Schottky Diode Usage on TS RG LTC7001 100k TGUP When turning off a power MOSFET that is connected to an TGDN inductive component (, long or complex load), 10Ω the TS pin can be pulled below ground until the current in CG BST 47nF the inductive component has completely discharged. The CB 1µF TS pin is tolerant of voltages down to –6V, however, an TS LOAD CLOAD optional Schottky diode with a voltage rating at least as 100µF high as the load voltage should be connected between TS 7001 F05 and ground to prevent discharging the inductive through Figure 5. Powering Large Capacitive Loads the TS pin of the LTC7001. See Figure 6.

The values for RG and CG to limit the inrush current can VIN be calculated from the below equation: LTC7001

0.7 • 12V • C TGUP M1A I ≅ LOAD IN_RUSH TGDN RG • CG L1 TS LOAD For the values shown in Figure 5 the inrush current will be: D2 7001 F06 0.7 • 12V • 100µF IIN_RUSH ≅ ≅ 180mA Figure 6. Optional Schottky Diode Usage 100kΩ • 0.047µF Correspondingly, the ramp rate at the load for the circuit in Figure 5 is approximately: ΔV 0.7 • 12V LOAD ≅ ≅ 2V/ ms ΔT RG • CG

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12 For more information www.linear.com/LTC7001 LTC7001 Typical Applications Reverse Input Protection 2. Limit the resistance of the TS trace, by making it short and wide. To protect the load from discharging back into VIN when the VIN voltage drops below the load voltage, two exter- 3. CB needs to be close to chip. nal N-channel MOSFETs should be used and must be in 4. Always include an option in the PC board layout to place a back-to-back arrangement as shown in Figure 7. Dual a resistor in series with the gate of any external MOSFET. N-channel packages such as the Vishay/Siliconix Si7956DP High frequency oscillations are design dependent, and are a good choice for space saving designs. having the option to add a series dampening resistor PC Board Layout Considerations can save a design iteration of the PC board. 1. Solder the exposed pad on the backside of the LTC7001 package directly to the ground plane of the board.

VIN LTC7001

TGUP M1A TGDN TS

M1B

LOAD 7001 F07

Figure 7. Protecting Load from Voltage Drops on VIN

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For more information www.linear.com/LTC7001 13 LTC7001 Typical Applications

High Side Switch with Inrush Control and OVLO

VIN 3.5V TO 135V 47µF 590k +1µF 220k OVLO TGUP IRFS4115PBF TGDN 12.1k 0.47µF LTC7001 10Ω VCC V 7V TO 15V CC BST 4.7µF LOAD ONOFF INP TS 3.5V TO 60V VCCUV GND DFLS1150 15mF

7001 TA02

High Side Switch with VCCUV and OVLO

VIN 3.5V TO 135V 976k 12.1k OVLO TGUP BSC12DN20NS3G 71.5k TGDN VCCUV LTC7001 BST 0.1µF VCC LOAD VCC TS 5V TO 15V 3.5V TO 100V ONOFF INP GND

7001 TA03

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14 For more information www.linear.com/LTC7001 LTC7001 Package Description Please refer to http://www.linear.com/product/LTC7001#packaging for the most recent package drawings.

MSE Package 10-Lead Plastic MSOP, Exposed Die Pad (Reference LTC DWG # 05-08-1664 Rev I)

BOTTOM VIEW OF EXPOSED PAD OPTION 1.88 1.88 ±0.102 (.074 ±.004) 0.889 ±0.127 1 (.074) 0.29 (.035 ±.005) 1.68 REF (.066)

5.10 0.05 REF 1.68 ±0.102 3.20 – 3.45 (.201) DETAIL “B” (.066 ±.004) (.126 – .136) MIN CORNER TAIL IS PART OF DETAIL “B” THE LEADFRAME FEATURE. FOR REFERENCE ONLY 10 NO MEASUREMENT PURPOSE 0.50 0.305 ± 0.038 (.0197) 3.00 ±0.102 (.0120 ±.0015) BSC (.118 ±.004) 0.497 ±0.076 TYP (NOTE 3) (.0196 ±.003) RECOMMENDED SOLDER PAD LAYOUT 8910 7 6 REF

3.00 0.102 4.90 ±0.152 ± (.118 .004) (.193 ±.006) ± (NOTE 4) DETAIL “A” 0.254 (.010) 0° – 6° TYP GAUGE PLANE 1 2 3 4 5

0.53 ±0.152 1.10 0.86 (.021 ±.006) (.043) (.034) MAX REF DETAIL “A” 0.18 (.007) SEATING PLANE 0.17 – 0.27 0.1016 ±0.0508 (.007 – .011) (.004 .002) 0.50 ± TYP MSOP (MSE) 0213 REV I NOTE: (.0197) 1. DIMENSIONS IN MILLIMETER/(INCH) BSC 2. DRAWING NOT TO SCALE 3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.152mm (.006") PER SIDE 4. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS. INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.152mm (.006") PER SIDE 5. LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.102mm (.004") MAX 6. EXPOSED PAD DIMENSION DOES INCLUDE MOLD FLASH. MOLD FLASH ON E-PAD SHALL NOT EXCEED 0.254mm (.010") PER SIDE.

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Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa- tion that the interconnectionFor more of its circuitsinformation as described www.linear.com/LTC7001 herein will not infringe on existing patent rights. 15 LTC7001 Typical Application Motor Driver

CMPD3003 0.1µF VCC 48V 6V TO 15V

BST VCC TGUP BSC252N10NS TGDN LTC7001 TS PWM - 20kHz

INP VCCUV 86.6k OVLO VS-12CWQ10FN M 48V, 500W MOTOR GND

7001 TA04

Related Parts

PART NUMBER DESCRIPTION COMMENTS

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LT 0517 • PRINTED IN USA www.linear.com/LTC7001 16 For more information www.linear.com/LTC7001  LINEAR TECHNOLOGY CORPORATION 2017