Field Effect Investigations of Charge Carrier Transport In
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Room Temperature Ultrahigh Electron Mobility and Giant Magnetoresistance in an Electron-Hole-Compensated Semimetal Luptbi
High Electron Mobility and Large Magnetoresistance in the Half-Heusler Semimetal LuPtBi Zhipeng Hou1,2, Wenhong Wang1,*, Guizhou Xu1, Xiaoming Zhang1, Zhiyang Wei1, Shipeng Shen1, Enke Liu1, Yuan Yao1, Yisheng Chai1, Young Sun1, Xuekui Xi1, Wenquan Wang2, Zhongyuan Liu3, Guangheng Wu1 and Xi-xiang Zhang4 1State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China 2College of Physics, Jilin University, Changchun 130023, China 3State Key Laboratory of Metastable Material Sciences and Technology, Yanshan University, Qinhuangdao 066004, China 4Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia. Abstract Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magneto-electric devices. Here, we report on the discovery of an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000 cm2/Vs with a non-saturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500 cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov-de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our finding provide a new approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals. -
Imperial College London Department of Physics Graphene Field Effect
Imperial College London Department of Physics Graphene Field Effect Transistors arXiv:2010.10382v2 [cond-mat.mes-hall] 20 Jul 2021 By Mohamed Warda and Khodr Badih 20 July 2021 Abstract The past decade has seen rapid growth in the research area of graphene and its application to novel electronics. With Moore's law beginning to plateau, the need for post-silicon technology in industry is becoming more apparent. Moreover, exist- ing technologies are insufficient for implementing terahertz detectors and receivers, which are required for a number of applications including medical imaging and secu- rity scanning. Graphene is considered to be a key potential candidate for replacing silicon in existing CMOS technology as well as realizing field effect transistors for terahertz detection, due to its remarkable electronic properties, with observed elec- tronic mobilities reaching up to 2 × 105 cm2 V−1 s−1 in suspended graphene sam- ples. This report reviews the physics and electronic properties of graphene in the context of graphene transistor implementations. Common techniques used to syn- thesize graphene, such as mechanical exfoliation, chemical vapor deposition, and epitaxial growth are reviewed and compared. One of the challenges associated with realizing graphene transistors is that graphene is semimetallic, with a zero bandgap, which is troublesome in the context of digital electronics applications. Thus, the report also reviews different ways of opening a bandgap in graphene by using bi- layer graphene and graphene nanoribbons. The basic operation of a conventional field effect transistor is explained and key figures of merit used in the literature are extracted. Finally, a review of some examples of state-of-the-art graphene field effect transistors is presented, with particular focus on monolayer graphene, bilayer graphene, and graphene nanoribbons. -
Non-Equilibrium Carrier Concentrations
ECE 531 Semiconductor Devices Lecture Notes { 06 Dr. Andre Zeumault Outline 1 Overview 1 2 Revisiting Equilibrium Considerations1 2.1 What is Meant by Thermal Equilibrium?........................1 2.2 Non-Equilibrium Carrier Concentrations.........................3 3 Recombination and Generation3 3.1 Generation.........................................3 4 Continuity Equations5 4.1 Minority Carrier Diffusion Equations...........................5 5 Quasi-Fermi Levels8 1 Overview So far, we have only discussed charge carrier concentrations under equilibrium conditions. Since no current can flow in thermal equilibrium, this particular case isn't much interest to us in trying to create electronic devices. Therefore, in this lecture, we discuss the situations and governing equations in which a charge carrier responds under non-equilibrium conditions. Topics to be covered include: • Recombination and Generation: An increase (generation) or decrease (recombination) in charge carrier concentrations away from or towards equilibrium. (e.g. due to absorption of light) • Current Continuity: Charge conservation, applied in the context of drift/diffusion. • Minority Carrier Diffusion Equations: Minority carrier diffusion in the presence of a large majority carrier concentration. • Quasi-Fermi Levels: Treating carrier densities under non-equilibrium conditions. 2 Revisiting Equilibrium Considerations 2.1 What is Meant by Thermal Equilibrium? When we discussed equilibrium charge carrier concentrations, it was argued that the production of charge carriers was thermally activated. This was shown to be true regardless of whether or not the semiconductor was intrinsic or extrinsic. When a semiconductor is intrinsic, the thermal energy necessary for charge carrier production is the bandgap energy EG, which corresponds to the energy needed to break a Silicon-Silicon covalent bond. -
Ohmic Contacts for Organic Optoelectronic Devices
Ohmic contacts for organic optoelectronic devices Zur Erlangung des akademischen Grades eines DOKTOR-INGENIEURS (Dr.-Ing.) von der KIT-Fakultät für Elektrotechnik und Informationstechnik des Karlsruher Instituts für Technologie (KIT) genehmigte DISSERTATION Von Naresh Kotadiya geb. In: Gujarat, Indien Tag der mündlichen Prüfung: 31.01.2020 Hauptreferent: Prof. Dr. Uli Lemmer Korreferent: Prof. Dr. Paul W. M. Blom Hauptreferent: Prof. Dr. Uli Lemmer LTI, KIT, Karlsruhe, Germany Korreferent: Prof. Dr. Paul W. M. Blom Max Planck Institut für Polymerforschung und Johannes Gutenberg Universität, Mainz Vorsitzender: Prof. Dr.-Ing. Sebastian Randel IPQ, KIT, Karlsruhe, Germany Weiterer Prüfer: Prof. Dr. rer. nat. Olaf Dössel IBT, KIT, Karlsruhe, Germany Weitere Prüferin: Prof. Dr. Tabea Arndt ITEP, KIT, Karlsruhe, Germany . To, Bhagwan Swaminarayan and my Gurus for inspiring my dreams and blessing me. In the joy of others, lies our own by H.D.H. Pramukh Swami Maharaj. Abstract In last three decades, great progress has been made in the field of organic electronics. Researchers have put tremendous efforts to make new materials and device architec- tures, which has resulted in a great commercial success of organic light emitting diodes in mobile phone and television display screens. Despite that, still today it is challenging to make organic electronic devices that are efficient in performance, stable in operation and are economical in production at the same time. The objective of this thesis is to understand fundamental charge transport properties of small molecules based organic semiconductors and to develop novel organic electronic device architectures. One of the prime requirements for efficient organic optoelectronic devices is to have ohmic charge injection contacts. -
Multidisciplinary Design Project Engineering Dictionary Version 0.0.2
Multidisciplinary Design Project Engineering Dictionary Version 0.0.2 February 15, 2006 . DRAFT Cambridge-MIT Institute Multidisciplinary Design Project This Dictionary/Glossary of Engineering terms has been compiled to compliment the work developed as part of the Multi-disciplinary Design Project (MDP), which is a programme to develop teaching material and kits to aid the running of mechtronics projects in Universities and Schools. The project is being carried out with support from the Cambridge-MIT Institute undergraduate teaching programe. For more information about the project please visit the MDP website at http://www-mdp.eng.cam.ac.uk or contact Dr. Peter Long Prof. Alex Slocum Cambridge University Engineering Department Massachusetts Institute of Technology Trumpington Street, 77 Massachusetts Ave. Cambridge. Cambridge MA 02139-4307 CB2 1PZ. USA e-mail: [email protected] e-mail: [email protected] tel: +44 (0) 1223 332779 tel: +1 617 253 0012 For information about the CMI initiative please see Cambridge-MIT Institute website :- http://www.cambridge-mit.org CMI CMI, University of Cambridge Massachusetts Institute of Technology 10 Miller’s Yard, 77 Massachusetts Ave. Mill Lane, Cambridge MA 02139-4307 Cambridge. CB2 1RQ. USA tel: +44 (0) 1223 327207 tel. +1 617 253 7732 fax: +44 (0) 1223 765891 fax. +1 617 258 8539 . DRAFT 2 CMI-MDP Programme 1 Introduction This dictionary/glossary has not been developed as a definative work but as a useful reference book for engi- neering students to search when looking for the meaning of a word/phrase. It has been compiled from a number of existing glossaries together with a number of local additions. -
Application Note No. 034 Carrier Lifetime and Forward Resistance in RF PIN-Diodes
Application Note, Rev. 2.0, Oct. 2006 Application Note No. 034 Carrier Lifetime and Forward Resistance in RF PIN-Diodes RF & Protection Devices Edition 2006-10-20 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2009. All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND (INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. -
3-July-7Pm-Resistivity-Mobility-Conductivity-Current-Density-ESE-Prelims-Paper-I.Pdf
_____________________________________________________________________ Carrier drift Current carriers (i.e. electrons and holes) will move under the influence of an electric field because the field will exert a force on the carriers according to F = qE In this equation you must be very careful to keep the signs of E and q correct. Since the carriers are subjected to a force in an electric field they will tend to move, and this is the basis of the drift current. Figure illustrates the drift of electrons and holes in a semiconductor that has an electric field applied. In this case the source of the electric field is a battery. Note the direction of the current flow. The direction of current flow is defined for positive charge carriers because long ago, when they were setting up the signs (and directions) of the current carriers they had a 50:50 chance of getting it right. They got it wrong, and we still use the old convention! Current, as you know, is the rate of flow of charge and the equation you will have used should look like Id = nAVdq where Id = (drift) current (amperes), n = carrier density (per unit volume) A = conductor (or semiconductor) area, vd = (drift) velocity of carriers, q = carrier charge (coulombs) which is perfectly valid. However, since we are considering charge movement in an electric field it would be useful to somehow introduce the electric field into the equations. We can do this via a quantity called the mobility, where d = E In this equation: 2 -1 -1 = the drift mobility (often just called the mobility) with units of cm V s -1 E = the electric field (Vcm ) We know that the conduction electrons are actually moving around randomly in the metal, but we will assume that as a result of the application of the electric field Ex, they all acquire a net velocity in the x direction. -
Carrier Concentrations
2 Numerical Example: Carrier Concentrations 15 -3 Donor concentration: Nd = 10 cm Thermal equilibrium electron concentration: ≈ 15 –3 no Nd = 10 cm Thermal equilibrium hole concentration: 2 2 ⁄ ≈2 ⁄ ()10 –3 ⁄ 15 –3 5 –3 po =ni no ni Nd ==10 cm 10 cm 10 cm Silicon doped with donors is called n-type and electrons are the majority carriers. Holes are the (nearly negligible) minority carriers. EECS 105 Fall 1998 Lecture 2 Doping with Acceptors Acceptors (group III) accept an electron from the lattice to fill the incomplete fourth covalent bond and thereby create a mobile hole and become fixed negative charges. Example: Boron. B– + mobile hole and later trajectory immobile negatively ionized acceptor -3 Acceptor concentration is Na (cm ), we have Na >> ni typically and so: one hole is added per acceptor: po = Na equilibrium electron concentration is:: 2 no = ni / Na EECS 105 Fall 1998 Lecture 2 Compensation Example shows Nd > Na positively ionized donors + + As As B– − negatively ionized acceptor mobile electron and trajectory ■ Applying charge neutrality with four types of charged species: ρ () ===– qno ++qpo qNd – qNa qpo–no+Nd–Na 0 2 we can substitute from the mass-action law no po = ni for either the electron concentration or for the hole concentration: which one is the majority carrier? answer (not surprising): Nd > Na --> electrons Na > Nd --> holes EECS 105 Fall 1998 Lecture 2 Carrier Concentrations in Compensated Silicon ■ For the case where Nd > Na, the electron and hole concentrations are: 2 n ≅ ≅ i no Nd – Na and po ------------------- Nd – Na ■ For the case where Na > Nd, the hole and electron concentrations are: 2 n ≅ ≅ i p o N a – N d and n o ------------------- N a – N d Note that these approximations assume that | Nd - Na|>> ni, which is nearly always true. -
Current-Voltage Characteristics of Organic
CURRENT-VOLTAGE CHARACTERISTICS OF ORGANIC SEMICONDUCTORS: INTERFACIAL CONTROL BETWEEN ORGANIC LAYERS AND ELECTRODES A Thesis Presented to The Academic Faculty by Takeshi Kondo In Partial Fulfillment of the Requirements for the Degree Doctor of Philosophy in the School of Chemistry and Biochemistry Georgia Institute of Technology August, 2007 Copyright © Takeshi Kondo 2007 CURRENT-VOLTAGE CHARACTERISTICS OF ORGANIC SEMICONDUCTORS: INTERFACIAL CONTROL BETWEEN ORGANIC LAYERS AND ELECTRODES Approved by: Dr. Seth R. Marder, Advisor Dr. Joseph W. Perry School of Chemistry and Biochemistry School of Chemistry and Biochemistry Georgia Institute of Technology Georgia Institute of Technology Dr. Bernard Kippelen, Co-Advisor Dr. Mohan Srinivasarao School of Electrical and Computer School of Textile and Fiber Engineering Engineering Georgia Institute of Technology Georgia Institute of Technology Dr. Jean-Luc Brédas School of Chemistry and Biochemistry Georgia Institute of Technology Date Approved: June 12, 2007 To Chifumi, Ayame, Suzuna, and Lintec Corporation ACKNOWLEDGEMENTS I wish to thank Prof. Seth R. Marder for all his guidance and support as my adviser. I am also grateful to Prof. Bernard Kippelen for serving as my co-adviser. Since I worked with them, I have been very fortunate to learn tremendous things from them. Seth’s enthusiasm about and dedication to science and education have greatly influenced me. It is always a pleasure to talk with Seth on various aspects of chemistry and life. Bernard’s encouragement and scientific advice have always been important to organize my research. I have been fortunate to learn from his creative and logical thinking. I must acknowledge all the current and past members of Prof. -
An Effective Bulk-Surface Thermistor Model for Large-Area Organic Light-Emitting Diodes
Weierstraß-Institut f ¨urAngewandte Analysis und Stochastik Leibniz-Institut im Forschungsverbund Berlin e. V. Preprint ISSN 2198-5855 An effective bulk-surface thermistor model for large-area organic light-emitting diodes Annegret Glitzky,Matthias Liero, Grigor Nika submitted: September 7, 2020 Weierstrass Institute Mohrenstr. 39 10117 Berlin Germany E-Mail: [email protected] [email protected] [email protected] No. 2757 Berlin 2020 2010 Mathematics Subject Classification. 35Q79, 35J25, 80A20. Key words and phrases. Dimension reduced thermistor system, existence of weak solutions, entropy solutions, organic light emitting diode, self-heating. The authors gratefully acknowledge the funding by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany’s Excellence Strategy – The Berlin Mathematics Research Center MATH+ (EXC-2046/1, project ID: 390685689) in project AA2-1. Edited by Weierstraß-Institut fur¨ Angewandte Analysis und Stochastik (WIAS) Leibniz-Institut im Forschungsverbund Berlin e. V. Mohrenstraße 39 10117 Berlin Germany Fax: +49 30 20372-303 E-Mail: [email protected] World Wide Web: http://www.wias-berlin.de/ An effective bulk-surface thermistor model for large-area organic light-emitting diodes Annegret Glitzky,Matthias Liero, Grigor Nika Abstract The existence of a weak solution for an effective system of partial differential equations describing the electrothermal behavior of large-area organic light-emitting diodes (OLEDs) is proved. The effective system consists of the heat equation in the three-dimensional bulk glass substrate and two semi-linear equations for the current flow through the electrodes coupled to algebraic equations for the continuity of the electrical fluxes through the organic layers. -
Introduction to Semiconductor Devices Presented by K.Pandiaraj Ece Department Kalasalingam University Previous Class Topics
ECE201 – ELECTRON DEVICES INTRODUCTION TO SEMICONDUCTOR DEVICES PRESENTED BY K.PANDIARAJ ECE DEPARTMENT KALASALINGAM UNIVERSITY PREVIOUS CLASS TOPICS • Atom • Electron • Proton • Neutron • Orbit levels of electrons in an atom • Valence electrons • Free electrons • Energy band diagram • Valance band, Conduction band, Forbidden band • Insulators • Conductors • Semiconductors INTRODUCTION TO SEMICONDUCTOR • The material which has electrical conductivity between that of a conductor and that of an insulator is called as semiconductor. • silicon, germanium and graphite are some examples of semiconductors. • semiconductors are the foundation of modern electronics, including transistors, light-emitting diodes, solar cells etc. INTRODUCTION TO SEMICONDUCTOR • It has a forbidden gap of about 1 electron volt (ev). • The semiconductor behaves as an insulator at low temperature. • However, at room temperature some of the electrons in valence band gains enough energy in the form of heat and moves in to conduction band. when the valence electrons moves in to conduction band they becomes free electrons. • The conduction band electrons are responsible for electrical conductivity. • When the temperature is goes on increasing, the number of valence band electrons moving in to conduction band is also increases. this shows that electrical conductivity of the semiconductor increases with increase in temperature. • In semiconductors, electric current is carried by two types of charge carriers they are electrons and holes. HOLE • The absence of electron in a particular place in an atom is called as hole. • Hole is a electric charge carrier which has positive charge. the electric charge of hole is equal to electric charge of electron but have opposite polarity. • When a small amount of external energy is applied, then the electrons in the valence band moves in to conduction band and leaves a vacancy in valence band. -
ECE 340 Lecture 41 : MOSFET II
ECE 340 Lecture 41 : MOSFET II Class Outline: •Mobility Models •Short Channel Effects •Logic Devices Things you should know when you leave… Key Questions • Why is the mobility in the channel lower than in the bulk? • Why do strong electric fields degrade channel mobility ? • What is the major difference between long channel and short channel MOSFETs? • How can I turn these into useful logic devices? M.J. Gilbert ECE 340 – Lecture 41 12/10/12 MOSFET Output Characteristics This makes sense based on what we already know about MOSFETs… For low drain voltages, the MOSFET looks like a resistor if the MOSFET is above threshold and depending on the value of VG. Now we can obtain the conductance of the channel… +++++++++++++ ++++ - - - - - - •But again, this is only valid in the linear regime. •We are assuming that VD << VG – VT. Depletion Region Channel Region M.J. Gilbert ECE 340 – Lecture 41 12/10/12 MOSFET Output Characteristics So we can describe the linear +++++++++++++ ++++ Pinch off regime, but how do we describe the VD saturation regime… - - - - - - • As the drain voltage is increased, the voltage across the oxide decreases near the drain end. • The resulting mobile charge also decreases in the channel Depletion Region Channel Region near the drain end. • To obtain an expression for the drain current in saturation, substitute in the saturation condition. M.J. Gilbert ECE 340 – Lecture 41 12/10/12 MOSFET Output Characteristics Let’s summarize the output characteristics for NMOS and PMOS… - - - - - - NMOS P-type Si + + + + + + + + + + + + + PMOS N-type Si M.J. Gilbert ECE 340 – Lecture 41 12/10/12 Mobility Models Let’s try a simple problem… For an n-channel MOSFET with a gate oxide thickness of 10 nm, VT = 0.6 V and Z =25 µm and a channel length of 1 µm.