Propriétés Structurales, Opto-Électroniques, Élastiques Et Dynamiques Des Semi-Conducteurs Type II-VI

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Propriétés Structurales, Opto-Électroniques, Élastiques Et Dynamiques Des Semi-Conducteurs Type II-VI REPUBLIQUE ALGERIENNE DEMOCRATIQUE ET POPULAIRE MINISTERE DE L’ENSEIGNEMENT SUPERIEUR ET DE LA RECHERCHE SCIENTIFIQUE UNIVERSITE FERHAT ABBAS – SETIF THESE Présentée à la faculté des Sciences Département de Physique Pour l’obtention du diplôme de DOCTORAT EN SCIENCES Option : physique du solide Par Mr. Benamrani Ammar Thème Propriétés structurales, opto-électroniques, élastiques et dynamiques des Semi-conducteurs type II-VI Soutenue le : 02/06/2012 Devant la commission d’examen : Dr. L. Louail Prof. U. F. A. SETIF Président Dr. K. Kassali Prof. U. F. A. SETIF Rapporteur Dr. Kh. Bouamama Prof. U. F. A. SETIF Co-Encadreur Dr. B. Bennecer Prof. U. Guelma Examinateur Dr. A. El Akrmi Prof. U. Annaba Examinateur Dr. H. Belkhir Prof. U. Annaba Examinateur À la mémoire de mon père, À ma mère, qui m’a enseigné le sens de la patience et de l’espoir, À ma femme, À toute ma famille À toute personne qui explore honnêtement les secrets de ce monde vaste, Je dédie ce modeste travail Remerciements REMERCIEMENTS Ce travail a été réalisé au laboratoire d’optoélectronique et des composants à l’université Ferhat Abbes à Sétif. Je tiens à remercier profondément Pr. Kamel Kassali, mon directeur de thèse pour m’avoir proposé ce thème intéressant et pour sa patience durant toutes les années de préparation de la thèse ainsi que ses conseils précieux et ses réponses à toutes mes questions reliées à mon sujet de thèse. J’exprime également toute ma reconnaissance à Mr. Kh. Bouamama, Professeur à l’université Ferhat Abbes de Sétif, qui m’a grandement fait profiter de ses fructueuses discussions en codes de calcul et dans mon sujet de thèse. Son aide a souvent été précieuse. Mes grands remerciements s'adressent à Mr L. Louail, Professeur à l'université Ferhat Abbas Sétif de me faire l’honneur de présider le jury. Je remercie également Mr A. El Akrmi , Mr H. Belkhir, Professeurs à l’université Badji Mokhtar de Annaba et Mr B. Bennecer , Professeur à l'université de Guelma d’avoir accepter d’examiner ce travail et de faire partie du jury. Je remercie Dr A. Muňoz, Professeur à l’université de Tenerife (Espagne) pour son aide en matière du matériel de calcul. Un remerciement spécial s’adresse à Mr A. Bouhemadou, Professeur à l’université de Sétif pour ces fructueuses discussions que nous avons eues sur quelques parties de mon travail et ses remarques intéressantes. Qu’il trouve ici l’expression de ma cordiale sympathie. Enfin, un grand remerciement s'adresse à ma mère dont le soutien ne m’a jamais fait défaut durant toutes ces années d’études. Je témoigne enfin toute ma reconnaissance à toutes celles et tous ceux qui m’ont donné le soutien moral et la volonté pour que ma thèse soit achevée, je citerai notamment mes collègues Mr. M. Kharoubi, Mr. S. Zerroug et tous les autres collègues que je ne peux pas tous les citer ici. NOMENCLATURE Liste des abréviations Liste des abréviations ADA Approximation de la densité moyenne (Average density approximation) CPA Approximation du potentiel coherent (Coherent potential approximation). CBM Minimum de la bande de conduction (Conduction band minimum) DFT Théorie de la fonctionnelle de la densité (Density functional theory ) DP Dielectric properties DFPT Théorie de la fonctionnelle de densité perturbée ( Density functional perturbation theory) EELS Spectre de perte d'énergie électronique (Electron Energy Loss Spectrum) EOS Equation d’état ( Equation of state ) FP- Ondes planes augmentées linéarisées tout-potentiel (Full potential linearised augmented LAPW planewave ) FFT Transformée de Fourier rapide (Fast Fourier Transform) GGA Approximation du gradient généralisé ( Generalized gradient approximation) GS Etat fondamental (Ground State) IFC Constantes des forces interatomiques (Interatomic forces constant) KSS Structure de Kohn Sham (Kohn Sham structure) LDA Approximation de la densité locale (Local density approximation ) LSD Densité locale de spin ( Local spin density) LRC Composante à rang long (Long Rang Component) MBPT Théorie de perturbation à plusieurs corps (Many body perturbation theory) OPW Ondes planes orthogonales ( Orthogonalized plane waves) PAW Pseudo potentiel et ondes augmentée ( Projector augmented wave ) PBE Fonctionnelle de Perdew Burke Ernzerhof ( Perdew Burke Ernzerhof functional) PWP Planewave pseudopotential Liste des abréviations RPA Approximation de la phase aléatoire (Random Phase Approximation) SCF Champ self consistent ( Self consistent field) SQS Approximation quasi aléatoire spéciale (Special quasirandom approximation) TD-LDA Approximation de Tamm-Dancoff LDA (Tamm Dancoff LDA) TDDFT Théorie de la fonctionnelle de la densité dépendante du temps (Time-Dependent Density Functional Theory) TBT Théorie de la liaison forte (Tight binding Theory) USPP Pseudo-potentiels ultra doux (Ultra Soft Pseudo Potentials) VBM Maximum de la bande de valence (Valence band maximum) VCA Approximation du cristal virtuel (Virtual cristal approximation) WDA Weighted density approximation SC La supercellule (Supercell) TB- Tight binding linear muffin-orbital LMTO LISTE DES FIGURES Liste des figures Liste des figures Figure I.1 Organigramme montrant la méthode de résolution de l’équation de Kohn-Sham 12 Figure II.1 Troncature du développement de l'onde plane dans l'espace réciproque ……… 18 Figure II.2 Pseudo-fonction comparée avec le pseudopotentiel et la fonction d’onde …….. 22 Figure III.1 Représentation schématique des modes de vibration dans un solide cristallin … 33 Figure IV.1 Pentagone de Hedin reliant les fonctions G, W, S,G et P ……………………… 56 Figure V.1 Les différentes structures cristallines des chalcogénures de Barium …………… 63 Figure V.2.a Réseau cristallin NaCl et ses différentes projections …………………………… 64 Figure V.2.b Première zone de Brillouin pour le réseau cubique à faces centrées …………… 64 Figure V.2.c Réseau cristallin CsCl et ses différentes projections …………………………… 65 Figure V.3 Variation de l’énergie totale avec le volume dans les phases B1 et B2 pour BaTe, BaSe et BaS ………………………………………………………………………………….. 69 Figure V.4 Enthalpie de BaS, BaSe et BaTe en fonction de la pression dans les deux phases B1 et B2 …………………………………………………………………………. 73 Figure V.5 Dépendance en pression des constants élastiques des composés BaS, BaSe et BaTe dans les deux phases NaCl et CsCl ………………………………………. 77 Figure V.6 Structures de bandes électroniques des composés BaS, BaSe et BaTe dans la phase B1 (NaCl) ………………………………………………………………... 81 Figure V.7 Variation des gaps d'énergie en fonction de la pression pour BaS, BaSe et BaTe dans la phase B2 ………………………...……………………………………… 84 Liste des figures Figure V.8 Organigramme d’un calcul GW …………………………………………………. 87 Figure V.9 La partie imaginaire de la fonction diélectrique des composés BaS, BaSe et BaTe ………………………………………………………………….. 91 Figure V.10 La partie réelle de la fonction diélectrique des composés BaS, BaSe et BaTe … 92 Figure V.11 Coefficient d’extinction k(w) des composés BaS, BaSe et BaTe dans la phase B1 ………………………………………………………..…………………….... 93 Figure V.12 Fonction de perte d'énergie (EELS) des composés BaS, BaSe et BaTe ……….. 94 Figure V.13 Indice de réfraction n(ω) des composés BaS, BaSe et BaTe …………………… 95 Figure V.14 Variation de la constante diélectrique haute fréquence e (¥) et la charge effective de Born Z B en fonction de la pression pour BaS ……………………. 99 Figure V.15 Variation de la constante diélectrique haute fréquence e (¥) et la charge effective de Born Z B en fonction de la pression pour BaSe …………………… 100 Figure V.16 Variation de la constante diélectrique haute fréquence e (¥) et la charge effective de Born Z B en fonction de la pression pour BaTe ……………...…... 100 Figure V.17 Dépendance en composition du paramètre de la maille ( a0 ) de l’alliage 109 BaSxSe1-x dans les approches VCA et super cellule …………………………... Figure V.18 Dépendance en composition du module de compressibilité ( B0 ) de l’alliage 109 BaSxSe1-x dans les approches VCA et super cellule ………………………….. Figure V.19 Dépendance en composition des constantes élastiques de l’alliage BaSxSe1-x … 111 Figure V.20 Dépendance en composition de la Charge effective de Born ZB et la charge * effective écrantée Z de l’alliage BaSxSe1-x ………...………………………… 114 Liste des figures Figure V.21 Dépendance en composition des constantes diélectriques haute fréquence et statique (ε(∞) et ε(0)) de l’alliage ternaire BaSxSe1-x ……………..…………… 114 Figure V.22 Dépendance en composition des fréquences optiques des phonons de l’alliage BaSxSe1-x au point G ………………………………………………………….. 117 Figure V.23 Dépendance en composition des fréquences acoustiques et optiques des phonons de l’alliage BaSxSe1-x au point de haute symétrie X ………………………….... 118 Figure V.24 Dépendance en composition des fréquences acoustiques et optiques des phonons de l’alliage BaSxSe1-x au point de haute symétrie L …………………................... 119 LISTE DES TABLEAUX Liste des tableaux Liste des tableaux Tableau V.1 Paramètre de maille a0 , module de compressibilité B0 , dérivée du module de compressibilité des composés BaS, BaSe et BaTe dans les phases NaCl et CsCl………………………………………........................................................ 67 Tableau V.2 Pression de transition PT, rapport des volumes VT(B1) /V0(B1), V (B ) /V (B ) et le changement relatif de volume ΔV /V pour les composés T 2 0 1 0 BaS, BaSe et BaTe……………………………………………………………. 71 Tableau V.3 Constantes élastiques des composés BaS, BaSe et BaTe dans les phases NaCl et CsCl aux volumes d’équilibre………………………………………… 75 Tableau V.4 Dépendance en pression des constantes élastiques Cij pour BaS, BaSe et BaTe dans les phases NaCl et CsCl …………………………………………………. 79 Tableau V.5 Pression de métallisation Pm des composés BaX (X=S, Se et Te)………..…... 83 Tableau V.6 Gaps d’énergie indirects (Γ-X) des composés BaS, BaSe et BaTe dans la phase B1 ………………………………………………………………………. 88 Tableau V.7 Indice de réfraction statique n(0) pour les composés BaX (X=S, BaSe et BaTe)….……………………………………………………………………….. 97 Tableau V.8 Charges effectives de Born ZB et constantes diélectriques haute fréquence e (¥) pour BaS, BaSe et BaTe dans les phases B1 et B2 aux volumes d’équilibre …………………………………………………………………….
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