SSD Flash Drives Enter the Enterprise Why SSD Drives?
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Jim Handy Jim.Handy(At)Objective-Analysis.Com PO Box 440, Los Gatos, CA 95031-0440, USA +1 (408) 356-2549
Jim Handy Jim.Handy(at)Objective-Analysis.com PO Box 440, Los Gatos, CA 95031-0440, USA +1 (408) 356-2549 Experience Experienced in Trial & Deposition Testimony, Expert Reports, etc. Highly published and widely quoted as a key semiconductor industry analyst. 37-year semiconductor industry veteran. Honorary Member: Storage Networking Industry Association (SNIA) Deep technical understanding and design background. Highly analytical. Excellent communications skills: oral, written, and presentation. Author of key reference design work: “The Cache Memory Book” Harcourt Brace, 1993 Patent holder in cache memory design Expert Experience Trial Testimony In Re: Spansion et al Federal Bankruptcy Court of Delaware Docket No: 09-10690, (Hon. Kenneth Carey). 11/30/09 Netlist, Inc. (Plaintiff) vs. Diablo Technologies, Inc. (Defendant), US District Court, Northern District of CA, Case No. 13-CV-05962 YGR, (Hon. Yvonne Gonzalez Rogers), 3/13/15 Deposition Testimony In Re: Spansion et al Federal Bankruptcy Court of Delaware Docket No: 09-10690, (Hon. Kenneth Carey). 11/24/09 In Re: SRAM, 07-CV-1819-CW (N.D. Cal.), 3/25/10 Expert Reports Expert Rebuttal Report - In Re: Spansion et al Federal Bankruptcy Court of Delaware Docket No: 09-10690, (Hon. Kenneth Carey). 11/20/09 (8 pages) Expert Report - In Re: SRAM, 07-CV-1819-CW (N.D. Cal.), 1/25/10 (13 pages) Expert Report - In Re: Qimonda Richmond, LLC, et al., Case No. 09-10589 (MFW) 2/6/12 (30 pages) Expert Report - Netlist, Inc. (Plaintiff) vs. Diablo Technologies, Inc. (Defendant), US District Court, Northern District of CA, Case No. 13-CV-05962 YGR, (Hon. -
Garbage Collection Understanding Foreground Vs
Garbage Collection Understanding Foreground vs. Background GC and Other Related Elements Kent Smith Sr. Director of Corporate Marketing SandForce Flash Memory Summit August 2011 Santa Clara, CA 1 Understanding Garbage Collection (GC) • In flash memory, GC is the process of relocating existing data, deleting stale data, and creating empty blocks for new data • All SSDs will have some form of GC – it is not an optional feature • NAND flash cannot directly overwrite a page with data; it has to be first erased • One full block of pages has to be erased, not just one page • GC starts after each page has been written one time • Valid data is consolidated and written into new blocks • Invalid (replaced) data is ignored and gets erased • Wear leveling mainly occurs during GC Source: Wikipedia Flash Memory Summit 2011 Santa Clara, CA 2 How the OS Deletes Data • The OS tracks what files are present and what logical blocks are holding the files • SSDs do not understand the file structure of an OS; they only track valid data locations reported by the OS • When the OS deletes a file, it marks the file’s space in its logical table as free ► It does not tell the drive anything • When the OS writes a new file to the drive, it will eventually write to the previously used spaces in the table ► An SSD only knows data is no longer needed when the OS tells it to write to an address that already contains data Flash Memory Summit 2011 Santa Clara, CA 3 Understanding the TRIM Command • The OS* sends a TRIM command** at the point of file deletion • The SSD marks -
Storage Solutions for Embedded Applications
White Paper Storage Solutions Brian Skerry Sr. Software Architect Intel Corporation for Embedded Applications December 2008 1 321054 Storage Solutions for Embedded Applications Executive Summary Any embedded system needs reliable access to storage. This may be provided by a hard disk drive or access to a remote storage device. Alternatively there are many flash solutions available on the market today. When considering flash, there are a number of important criteria to consider with capacity, cost, and reliability being foremost. This paper considers hardware, software, and other considerations in choosing a storage solution. Wear leveling is an important factor affecting the expected lifetime of any flash solution, and it can be implemented in a number of ways. Depending on the choices made, software changes may be necessary. Solid state drives offer the most straight forward replacement option for Hard disk drives, but may not be cost-effective for some applications. The Intel® X-25M Mainstream SATA Solid State Drive is one solution suitable for a high performance environment. For smaller storage requirements, CompactFlash* and USB flash are very attractive. Downward pressure continues to be applied to flash solutions, and there are a number of new technologies on the horizon. As a result of reading this paper, the reader will be able to take into consideration all the relevant factors in choosing a storage solution for an embedded system. Intel® architecture can benefit the embedded system designer as they can be assured of widespread -
How Controllers Maximize SSD Life
SSSI TECH NOTES How Controllers Maximize SSD Life January 2013 by SNIA SSSI Member: Jim Handy Objective Analysis “The SSD Guy” www.snia.org1 About the Solid State Storage Initiative The SNIA Solid State Storage Initiative (SSSI) fosters the growth and success of the market for solid state storage in both enterprise and client environ- ments. Members of the SSSI work together to promote the development of technical standards and tools, educate the IT communities about solid state storage, perform market outreach that highlights the virtues of solid state storage, and collaborate with other industry associations on solid state stor- age technical work. SSSI member companies come from a wide variety of segments in the SSD industry www.snia.org/forums/sssi/about/members. How Controllers Maximize SSD Life by SNIA SSSI Member: Jim Handy “The SSD Guy”, Objective Analysis Table of Contents Introduction 2 How Controllers Maximize SSD Life 2 Better Wear Leveling 3 External Data Buffering 6 Improved ECC 7 Other Error Management 9 Reduced Write Amplification 10 Over Provisioning 11 Feedback on Block Wear 13 Internal NAND Management 14 1 Introduction This booklet contains a collection of posts from Jim Handy’s SSD Guy blog www.TheSSDGuy.com which explores the various techniques designers use to increase SSD life. How Controllers Maximize SSD Life How do controllers maximize the life of an SSD? After all, MLC flash has a lifetime of only 10,000 erase/write cycles or fewer and that is a very small number compared to the write traffic an SSD is expected to see in a high- workload environment, especially in the enterprise. -
For Immediate Release
For Immediate Release Media Contact: Story Public Relations Michael Schoolnik [email protected] SandForce SSD Processors Transform Mainstream Data Storage Breakthrough DuraClass Technology Sets New Standards for SSD Reliability, Performance and Energy Efficiency SARATOGA, CA. – April 13, 2009 – SandForce™ Inc., the pioneer of SSD (Solid State Drive) Processors that enable commodity NAND flash deployment in enterprise and mobile computing applications, today emerged from stealth mode and unveiled its first product, the SF‐1000 SSD Processor family. These highly‐integrated silicon devices address the inherent endurance, reliability, and data retention issues associated with NAND flash memory, making it possible to build SSDs that deliver unprecedented performance over the life of the drive with orders‐of‐magnitude higher reliability than enterprise‐class HDDs (Hard Disk Drives). The SandForce patent‐pending DuraClass™ technology promises to accelerate mass‐market SSD adoption. Leading OEMs are expected to release both SLC (single level cell) and MLC (multi‐level cell) flash‐based SSDs using SandForce single‐chip SSD Processors later this year. IDC expects worldwide shipments of SSD's in the Enterprise and PC markets will exceed 40 million units in 2012, representing a CAGR of 171% from 2007‐20121. “The SF‐1000 SSD Processor Family promises to address key NAND flash issues allowing MLC flash technologies to be reliably used in broad based, mission critical storage environments,” said Mike Desens, Vice President for System Design, IBM. -
Wolfram: Enhancing Wear-Leveling and Fault Tolerance in Resistive
WoLFRaM: Enhancing Wear-Leveling and Fault Tolerance in Resistive Memories using Programmable Address Decoders Leonid Yavits‡ Lois Orosa§ Suyash Mahar⋆ João Dinis Ferreira§ Mattan Erez† Ran Ginosar‡ Onur Mutlu§ ‡Technion-Israel Institute of Technology §ETH Zürich ⋆Indian Institute of Technology Roorkee †University of Texas Austin Resistive memories have limited lifetime caused by limited which reduces wear-leveling eciency. Fourth, most tech- write endurance and highly non-uniform write access patterns. niques are relatively slow because they level out the write Two main techniques to mitigate endurance-related memory fail- non-uniformity in a sequential fashion. The goal of wear- ures are 1) wear-leveling, to evenly distribute the writes across leveling is to extend the lifetime of memory cells as much the entire memory, and 2) fault tolerance, to correct memory cell as possible. Once memory cells reach their endurance limits, failures. However, one of the main open challenges in extend- resistive memory needs fault tolerance to continue operating. ing the lifetime of existing resistive memories is to make both Fault tolerance mechanisms [4, 5, 7–17, 26, 35, 47, 48, 57, 58, 60, techniques work together seamlessly and eciently. 64–67, 69, 76, 81, 87, 89, 102, 103, 113] typically enable recovery To address this challenge, we propose WoLFRaM, a new mech- from several failed bits per data page or data block. anism that combines both wear-leveling and fault tolerance Unfortunately, to our knowledge, there is no technique that techniques at low cost by using a programmable resistive ad- combines both wear-leveling and fault tolerance techniques in dress decoder (PRAD). -
IDC Vendor Profile Of
VENDOR PROFILE SVP.11: Texas Memory Systems Delivering on the SSD Promise Jeff Janukowicz IDC OPINION The solid state drive (SSD) market is full of activity, with companies large and small announcing products that carry a promise of impressive performance gains, low power consumption, and cost-effective solutions when compared with the 50-year-old mechanical hard disk drive (HDD). Yet, for one company, Texas Memory Systems (TMS), with over 30 years of experience and 15 generations of SSD products, delivering on the promise of SSDs is nothing new. For some companies, they are just entering the SSD market by announcing their intentions or partners and realizing revenue is still a future event. TMS, on the other hand, is growing its RamSan SSD business with sales to end users through OEM, reseller, and direct channels and has positioned itself well within what IDC believes is a fast-growing market. TMS specializes in providing low-latency, high-bandwidth, I/O-intensive storage systems. TMS strengths include: Solid engineering focus. SSDs are advanced storage solutions that require both innovation and detailed knowledge to integrate solid state memory, memory management, controllers, and backplanes into a storage system without sacrificing performance. TMS does most of its engineering internally. Over 50% of its employees are engineers with an average of 5+ years of software experience and 10+ years of hardware experience at TMS designing SSD solutions for enterprise customers. This level of technical expertise is vital to deliver on the promise of SSDs, to iterate products rapidly in a competitive marketplace and, perhaps most important, to support enterprise customers. -
Flash Memory Guide
Flash Memory Guide Portable Flash memory for computers, digital cameras, mobile phones and other devices Flash Memory Guide Kingston®, the world’s leading independent manufacturer of memory products, offers a broad range of Flash cards, USB Flash drives and Solid-State Drives (SSD) (collectively called Flash storage devices) that employ Flash memory chips for storage. The purpose of this guide is to explain the various technologies and Flash memory offerings that are available. Note: Due to Flash technology changes, specifications listed in this document are subject to change without notice 1.0 Flash Memory: Empowering A New Generation of Flash Storage Devices Toshiba invented Flash memory in the 1980s as a new memory technology that allowed stored data to be saved even when the memory device was disconnected from its power source. Since then, Flash memory technology has evolved into the preferred storage media for a variety of consumer and industrial devices. In consumer devices, Flash memory is widely used in: • Notebook computers • Personal computers • Tablets • Digital cameras • Global Positioning Systems (GPS) • Mobile phones • Solid-state music players such as • Electronic musical instruments MP3 players • Television set-top boxes • Portable and Home Video game consoles Flash memory is also used in many industrial applications where reliability and data retention in power-off situations are key requirements, such as in: • Security systems/IP Cameras • Military systems • Embedded computers • Set-top boxes • Networking and communication products • Wireless communication devices • Retail management products • Point of Sale Devices (e.g., handheld scanners) Please Note: Most Kingston Flash memory is designed and tested for compatibility with consumer devices. -
Wear Leveling Architecture and Read Disturbance Technology for Solid-State Drives
An InnoDisk White Paper August 2012 Wear Leveling Architecture And Read Disturbance Technology For Solid-State Drives Prolonging SSD Lifespan And preventing Read Disturbance InnoDisk’s Wear Leveling Architecture and Read Disturbance Technology 0 Revision History Date Version Information 2012.07.09 1.0 First Release Introduction This white paper presents InnoDisk’s wear leveling process for prolonging the lifespan of a solid-state drive (SSD) and preventing read disturbance. Conventional file systems like FAT, UFS, HFS, ext 2 and NTFS were originally designed for magnetic strips and as such rewrite data repeatedly to the same area. However, SSDs can be put through a limited number of erase cycles before becoming unreliable. This is usually around 3,000/100,000(MLC/SLC) cycles. Wear leveling works around these limitations by spreading erasures and re-writes across multiple blocks in an SSD. In this way, no single block is subjected to constant read/writes. How InnoDisk’s Wear Leveling architecture and technology prolongs SSD lifespan and prevents read disturbance InnoDisk uses a combination of two types of wear leveling – dynamic and static wear leveling – to distribute write cycling across an SSD. Both types of wear leveling use a map to link Logical Block Address (LBAs) from the OS to the physical Flash memory. Static wear leveling, however, differs in that static blocks that do not change are periodically moved so that low usage cells are able to be used by other data. System Buffer Blocks and Dynamic Wear Leveling Because Flash blocks can’t be overwritten, some spare blocks need to be reserved for temporary data buffering. -
A High-Performance Wear- Leveling Algorithm for Flash Memory System
LETTER IEICE Electronics Express, Vol.9, No.24, 1874-1880 A high-performance wear- leveling algorithm for flash memory system Ching-Che Chung1a), Duo Sheng2, and Ning-Mi Hsueh1 1 Department of Computer Science & Information Engineering, National Chung- Cheng University, 168 University Road, Min-Hsiung, Chia-Yi 621, Taiwan 2 Department of Electrical Engineering, Fu Jen Catholic University, 510 Chung-Cheng Rd. Hsin-Chung, Taipei 24205, Taiwan a) [email protected] Abstract: In this paper, a low-complexity high-performance wear- leveling algorithm which named sequential garbage collection (SGC) for flash memory system design is presented. The proposed SGC outperforms existing designs in terms of wear evenness and low design complexity. The lifetime of the flash memory can be greatly lengthened by the proposed SGC. The proposed SGC doesn’t require any tuning threshold parameter, and thus it can be applied to various systems without prior knowledge of the system environment for threshold tuning. Simulation results show that the maximum block erase count and standard deviation of the block erase count compared to the greedy algorithm are decreased by up to 75% and 94%, respectively. Keywords: NAND flash, wear leveling, garbage collection Classification: Storage technology References [1] A. Kawaguchi, S. Nishioka, and H. Motoda, “A flash-memory based file system,” Proc USENIX Annual Technical Conference, pp. 155–164, June 1995. [2] M. Rosenblum and J. K. Ousterhout, “The design and implementation of a log-structured file system,” ACM Transactions on Computers Systems, vol. 10, no. 1, pp. 26–52, Feb. 1992. [3] J.-W. Park, et al., “An integrated mapping table for hybrid FTL with fault- tolerant address cache,” IEICE Electron Express, vol. -
Wear Leveling in Micron® NAND Flash Memory
TN-29-61: Wear Leveling in NAND Flash Memory Introduction Technical Note Wear Leveling in Micron® NAND Flash Memory Introduction This document describes the recommended wear leveling algorithm to be implemented in the flash translation layer (FTL) software for Micron® NAND Flash memory. Wear Leveling and the Flash Translation Layer In Micron single-level cell (SLC) and multilevel cell (MLC)NAND Flash memory, each physical block can be programmed and erased reliably up to 100,000 and 10,000 times, respectively. For write-intensive applications, it is recommended to implement a wear leveling algorithm to monitor and spread the number of write cycles per block. In memory devices that do not use a wear leveling algorithm not all blocks get used at the same rate. The wear leveling algorithm ensures that equal use is made of all the available write cycles for each block. Wear leveling is implemented in the flash translation layer (FTL), which is the additional software layer between the file system and the NAND Flash memory. The FTL allows operating systems to read and write to NAND Flash memory devices in the same way as disk drives and provides the translation from virtual to physical addresses. Wear leveling can also be implemented by the file system directly on the NAND Flash (see Figure 1). Refer to the data sheets for the full list of root part numbers and for further information on the devices (see “References” on page 5). PDF: 09005aef8467d996/Source: 09005aef8467d99e Micron Technology, Inc., reserves the right to change products or specifications without notice. tn2961_wear_leveling_in_nand.fm - Rev. -
Flash Memory
Semiconductor Catalog Mar. 2016 Flash Memory STORAGE PRODUCTS & SEMICONDUCTOR SEMICONDUCTOR & STORAGE PRODUCTS http://toshiba.semicon-storage.com/ FlashF l ash M emor Memoryy Toshiba, the inventor of Flash Memory, blazed the trail to a world we can all carry data, music and videos with us, wherever we go. Now, Flash Memory is playing a major role in driving the evolution of automobiles and industrial equipment that is essential for realizing an environmentally friendly society. Behind the scenes, Flash Memory supports the world’s continuing transformation to a better tomorrow. Back in 1984, Toshiba developed a new semiconductor memory, Flash Memory, and by doing led the industry, and its competitors, into the next generation. Today the international de facto standard, Flash Memories have realized an immense range of applications that include Memory Cards, Solid-State Drives (SSDs), and even industrial equipment. As the total volume of information continues its exponential growth, demand for storage units using Flash Memories will grow with it. In order to meets these market needs, Toshiba has made major investments in plant and equipment at its Yokkaichi memory fab, and is resolutely committed to develop new products. This brochure highlights Toshiba's Flash Memory and other Memory Solutions. Toshiba's Leading Technology Areas Features of Toshiba's Flash Memory W Process W Fast storage of large files W Multi-Level Cell (MLC) W Fast write and erase rates W Controller W Low per-bit cost W Die stacking W Easily extendable using the NAND Flash Memory interface W Packaging W Extensive product portfolio to meet diverse needs OProducts with the standard HS-MMC interface OOffers products with the high-speed UHS-I and UHS-II SD bus interfaces OAvailable as SD Memory Cards with unique features – 2 – Toshiba's Flash Memory and controller technologies have found a wide range of applications.