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1.8-600 Mhz, 150 W CW, 50 V RF Power LDMOS Transistor Data Sheet

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1.8-600 Mhz, 150 W CW, 50 V RF Power LDMOS Transistor Data Sheet Freescale Semiconductor Document Number: MMRF1320N Technical Data Rev. 0, 7/2015 RF Power LDMOS Transistors MMRF1320N High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs MMRF1320GN These high ruggedness devices are designed for use in high VSWR defense and commercial radio communications and HF, VHF and UHF radar applications. The unmatched input and output designs allow wide frequency 1.8–600 MHz, 150 W CW, 50 V range utilization, from 1.8 to 600 MHz. WIDEBAND RF POWER LDMOS TRANSISTORS Typical Performance: VDD =50Vdc Frequency Pout Gps D (MHz) Signal Type (W) (dB) (%) 230 CW 150 26.3 72.0 TO--270WB--4 PLASTIC 230 Pulse 150 Peak 26.1 70.3 MMRF1320N (100 sec, 20% Duty Cycle) Load Mismatch/Ruggedness Frequency Pin Test (MHz) Signal Type VSWR (W) Voltage Result TO--270WBG--4 PLASTIC 230 Pulse > 65:1 0.62 Peak 50 No Device MMRF1320GN (100 sec, 20% at all (3 dB Degradation Duty Cycle) Phase Overdrive) Angles Features Wide operating frequency range Gate A 32Drain A Extreme ruggedness Unmatched input and output allowing wide frequency range utilization Integrated stability enhancements Gate B 41Drain B Low thermal resistance Integrated ESD protection circuitry (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Pin Connections Freescale Semiconductor, Inc., 2015. All rights reserved. MMRF1320N MMRF1320GN RF Device Data Freescale Semiconductor, Inc. 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS –0.5, +133 Vdc Gate--Source Voltage VGS –6.0, +10 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C (1,2) Operating Junction Temperature Range TJ –40 to +225 C Total Device Dissipation @ TC =25C PD 952 W Derate above 25C 4.76 W/C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case RJC 0.21 C/W CW: Case Temperature 80C, 150 W CW, 50 Vdc, IDQ(A+B) = 100 mA, 230 MHz Thermal Impedance, Junction to Case ZJC 0.04 C/W Pulse: Case Temperature 66C, 150 W Peak, 100 sec Pulse Width, 20% Duty Cycle, 50 Vdc, IDQ(A+B) = 100 mA, 230 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2500 V Machine Model (per EIA/JESD22--A115) B, passes 250 V Charge Device Model (per JESD22--C101) IV, passes 1200 V Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C Table 5. Electrical Characteristics (TA =25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics (4) Gate--Source Leakage Current IGSS — — 1 Adc (VGS =5Vdc,VDS =0Vdc) Drain--Source Breakdown Voltage V(BR)DSS 133 139 — Vdc (VGS =0Vdc,ID =50mAdc) Zero Gate Voltage Drain Leakage Current IDSS — — 5 Adc (VDS =50Vdc,VGS =0Vdc) Zero Gate Voltage Drain Leakage Current IDSS — — 10 Adc (VDS = 100 Vdc, VGS =0Vdc) On Characteristics (4) Gate Threshold Voltage VGS(th) 1.8 2.4 2.8 Vdc (VDS =10Vdc,ID = 480 Adc) Gate Quiescent Voltage VGS(Q) 2.3 2.8 3.3 Vdc (VDD =50Vdc,ID = 100 mAdc, Measured in Functional Test) (4) Drain--Source On--Voltage VDS(on) — 0.26 — Vdc (VGS =10Vdc,ID =1Adc) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf/calculators. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955. 4. Each side of device measured separately. (continued) MMRF1320N MMRF1320GN RF Device Data 2 Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA =25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Dynamic Characteristics (1) Reverse Transfer Capacitance Crss — 0.8 — pF (VDS =50Vdc 30 mV(rms)ac @ 1 MHz, VGS =0Vdc) Output Capacitance Coss — 45.4 — pF (VDS =50Vdc 30 mV(rms)ac @ 1 MHz, VGS =0Vdc) Input Capacitance Ciss — 96.7 — pF (VDS =50Vdc,VGS =0Vdc 30 mV(rms)ac @ 1 MHz) (2) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =50Vdc,IDQ(A+B) = 100 mA, Pout = 150 W Peak (30 W Avg.), f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle Power Gain Gps 25.0 26.1 27.5 dB Drain Efficiency D 68.0 70.3 — % Input Return Loss IRL — –16 –9 dB Load Mismatch/Ruggedness (In Freescale Test Fixture) 50 ohm system, IDQ(A+B) = 100 mA Frequency Pin (MHz) Signal Type VSWR (W) Test Voltage, VDD Result 230 Pulse > 65:1 0.62 Peak 50 No Device Degradation (100 sec, 20% Duty Cycle) at all Phase Angles (3 dB Overdrive) Table 6. Ordering Information Device Tape and Reel Information Package MMRF1320NR1 TO--270WB--4 R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel MMRF1320GNR1 TO--270WBG--4 1. Each side of device measured separately. 2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. MMRF1320N MMRF1320GN RF Device Data Freescale Semiconductor, Inc. 3 TYPICAL CHARACTERISTICS 300 1.06 1.05 Ciss 300 mA VDD =50Vdc 100 1.04 IDQ(A+B) = 100 mA 1.03 C 800 mA oss 1.02 GS(Q) 1.01 10 1300 mA 1 0.99 0.98 1 Crss NORMALIZED V C, CAPACITANCE (pF) 0.97 0.96 Measured with 30 mV(rms)ac @ 1 MHz 0.95 VGS =0Vdc 0.1 0.94 02010 3040 50 -- 5 0--25 0 25 50 75 100 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (C) Note: Each side of device measured separately. IDQ (mA) Slope (mV/C) Figure 2. Capacitance versus Drain--Source Voltage 100 –2.466 300 –2.058 800 –2.015 1300 –1.877 Figure 3. Normalized VGS versus Quiescent Current and Case Temperature 108 VDD =50Vdc ID =3.36Amps 107 106 4.14 Amps 4.97 Amps MTTF (HOURS) 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http://www.freescale.com/rf/calculators. Figure 4. MTTF versus Junction Temperature -- CW MMRF1320N MMRF1320GN RF Device Data 4 Freescale Semiconductor, Inc. 230 MHz NARROWBAND PRODUCTION TEST FIXTURE C3 C5 MMRF1320N C27 C29 B1 C7 Rev. 1 C21 C23 D57619 C1 C25 L1 COAX1 C12 L3 COAX3 C16 C9 C14 C10 C18 C20 C19 C11 C31 C15 C17 CUT OUT AREA COAX2 C13 L4 COAX4 L2 C26 C2 C22 B2 C8 C24 C28 C30 C4 C6 Figure 5. MMRF1320N Narrowband Test Circuit Component Layout — 230 MHz MMRF1320N MMRF1320GN RF Device Data Freescale Semiconductor, Inc. 5 230 MHz NARROWBAND PRODUCTION TEST FIXTURE Table 7. MMRF1320N Narrowband Test Circuit Component Designations and Values — 230 MHz Part Description Part Number Manufacturer B1, B2 Small Ferrite Beads, Surface Mount 2743019447 Fair-Rite C1, C2 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet C3, C4, C23, C24 0.1 F Chip Capacitors CDR33BX104AKWS AVX C5, C6 220 nF Chip Capacitors C1812C224K5RACTU Kemet C7, C8 2.2 F Chip Capacitors C1825C225J5RACTU Kemet C9 2.2 pF Chip Capacitor ATC100B2R2JT500XT ATC C10, C11 18 pF Chip Capacitors ATC100B180JT500XT ATC C12, C13 330 pF Chip Capacitors ATC100B331JT200XT ATC C14, C15 39 pF Chip Capacitors ATC100B390JT500XT ATC C16, C17 15 pF Chip Capacitors ATC100B150JT500XT ATC C18, C19 1000 pF Chip Capacitors ATC100B102JT50XT ATC C20 82 pF Chip Capacitor ATC100B820JT500XT ATC C21, C22 0.10 F Chip Capacitors C1812F104K1RACTU Kemet C25, C26 2.2 F Chip Capacitors 2225X7R225KT3AB ATC C27, C28, C29, C30 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp C31 36 pF Chip Capacitor ATC100B360JT500XT ATC Coax1, 2, 3, 4 25 SemiRigid Coax, 2.4 Shield Length UT-141C-25 Micro-Coax L1, L2 3 Turns, 12 nH Inductors GA3094-ALC Coilcraft L3, L4 4 Turns, 17.5 nH Inductors GA3095-ALC Coilcraft PCB Arlon AD255A, 0.030, r =2.55 D57619 MTL MMRF1320N MMRF1320GN RF Device Data 6 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. RF Device Data V B1 + + DD V GG+ L3 C21 C23 C25 C27 C29 C1 C3 C5 C7 L1 Z22 Z20 C16 Z12 C12 Z18 COAX1 Z10 C14 COAX3 Z8 Z16 Z24 Z26 Z28 Z2 Z4 Z6 Z14 C18 RF RF INPUT C10 Z1 Z30 Z31 OUTPUT C9 DUT C20 Z3 Z5 Z7 Z15 C31 C11 Z17 Z25 Z27 Z29 Z9 C15 C19 Z11 COAX2 C13 COAX4 Z19 C17 Z13 Z21 L2 Z23 B2 V L4 GG+ C2 C4 C6 C8 VDD + + C22 C24 C26 C28 C30 MMRF1320N MMRF1320GN Figure 6. MMRF1320N Narrowband Test Circuit Schematic — 230 MHz Table 8. MMRF1320N Narrowband Test Circuit Microstrips — 230 MHz Microstrip Description Microstrip Description Microstrip Description Z1 0.3660.082 Microstrip Z12, Z13 0.2100.068 Microstrip Z24, Z25 1.0900.230 Microstrip Z2, Z3 0.6900.120 Microstrip Z14, Z15 0.4390.746 Microstrip Z26, Z27 0.0930.230 Microstrip Z4, Z5 0.1340.120 Microstrip Z16, Z17 0.2890.393 Microstrip Z28, Z29 0.1440.230 Microstrip Z6, Z7 0.3950.120 Microstrip Z18, Z19 0.1120.289 Microstrip Z30 0.2620.082 Microstrip Z8*, Z9* 0.1250.058 Microstrip Z20, Z21 0.4220.150 Microstrip Z31 0.1020.082 Microstrip 7 Z10, Z11 0.4500.058 Microstrip Z22, Z23 0.4000.150 Microstrip * Line length include microstrip bends TYPICAL CHARACTERISTICS — 230 MHz 180 160 VDD = 50 Vdc, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 140 120 100 Pin =0.34W 80 60 Pin =0.17W 40 , OUTPUT POWER (WATTS) PEAK out P 20 0 0 0.5 11.5 2 2.5 3 3.5 VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 7.
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