Failure and Technological Analysis

Quality control analysis during product Scanning acoustic microscopy (SAM) qualifications (reliability tests) front side Transducer translation We can offer you all analyses for example for AEC-Q100 stress test qualifications Transducer (Focusing Lens and detector for ultrasound)

What methods do we usually use? Device immersed in water Die attach

∑ X-Ray microscopy (XRAY, FeinFocus FXS-100.21) X-ray microscopy (2D) ∑ Scanning acoustic microscopy (front side, backside, transmission) (SAM, Sonix HS-500) ∑ Decapsulation of the devices (wet / dry / mechanically / by Laser) ∑ Internal visual inspection (IVI) using metallurgical optical leads microscopes (Reichert + Jung) with DIC, DF and crossed Decapsulation die short due pad polarizers contrast options and stereo microscope (Leica MZ6) to touching ∑ Inspection of the wiring using Scanning Electron Microscope wires (SEM, Leica Cambridge Stereoscan 360 FE) chip (die) bond ∑ Bond pull tests, bond shear tests, die shear tests and ball shear wires tests using Bond tester (XYZTEC Condor 70) ∑ Ball bond (CI-BB) and Package cross inspection (CI-P) using grinder/polisher (Struers Rotopol) Wiring ∑ Reporting with detailed assessments

Bond Pull Tests Ball Bond cross inspection

RoodMicrotec - FA-Poster - www.roodmicrotec.com - …certified by RoodMicrotec 1 Failure and Technological Analysis

What can we do for our customers? Non-Destructive Analysis Methods

∑ Analysis of laboratory and field rejects of microelectronic Prior to the DPA (destructive physical analysis), we use as much devices (discrete devices such as MOSFETs, diodes, as possible non-destructive methods: resistors as well as more complex integrated circuits), frequently from security relevant applications such as Scanning acoustic microscopy (SAM) automotive and avionics/space ∑ Quality control analysis during product qualifications Transducer translation (reliability tests) 10,2 µs 10,3 µs

9,6 µs

We can help you to track down your problem that might exist Transducer (Focusing Lens and detector for ultrasound) in the microelectronics manufacturing process, the IC handling ∑ 25/50 MHz ultrasonic frequency or in improper use in the field application. ∑ Focused ultrasound wave experiences Device immersed reflections at interfaces in water ∑ Selection of time interval (‚gate‘) defines 9,6 µs 10,2 µs sectional plane of the device imaged 10,3 µs What methods do we have available? ∑ Delaminations can be detected in SAM

A large variety of analysis techniques are available on-site. X-ray microscopy (2D) For optional techniques, we closely collaborate with external ∑ 40 – 100 kV anode voltage leads ∑ Spatial resolution of a few ten microns partners. die ∑ Fast and easy method for the detection ∑ Metallurgical optical microscopes (Reichert + Jung) with short due pad of failures such as DIC, DF and crossed polarizers contrast options to touching ∑ chip ruptures wires ∑ molten bond wires ∑ Stereo microscope Leica MZ6 chip ∑ touching bond wires ∑ X-Ray microscope (FeinFocus FXS-100.21) (die) bond ∑ lead-related problems wires ∑ Curve tracer for electrical measurements (Tektronix 370A) ∑ Scanning Acoustic Microscope (SAM, Sonix HS-500) X-ray tomography (3D) ∑ Scanning Electron Microscope 2D X-Ray image 3D-Visualization as iso-surface (SEM, Leica Cambridge Stereoscan 360 FE) ∑ Energy dispersive X-ray analysis (EDX, Microanalysis System Oxford Instruments) ∑ Wet and dry chemical deprocessing of ICs ∑ IR-Photoemission Microscope (Hamamatsu Phemos-200) Bad solder connection 2D-sections from the 3D data ∑ Bond tester (XYZTEC Condor 70) within a LED-Chip. Bond wires touch copper lead frame, ∑ Focused Ion Beam (FEI Strata 205) Tomography helps to thus creating an electrical short. ∑ OBIRCH (Optical beam induced resistance change) unambiguously identify ∑ X-Ray Tomography the failure site. (non-destructive 3D-Visualization method) RoodMicrotec - FA-Poster - www.roodmicrotec.com - …certified by RoodMicrotec 2 Failure and Technological Analysis

Methods for failure site High resolution imaging and chip manipulation localization on integrated circuits on nanometer length scales Scanning electron microscopy (SEM) Energy dispersive X-ray analysis (EDX) IR-Photoemission-Microscopy (EMMI)

Electron EDX-detector Faulty LED with a leakage current of column -75µA @ - 5 V in reverse direction

Backscattered electrons (BSE) Secondary electrons (SE) Good signal for high Z elements Secondary electrons (SE) Silicon – Map (as obtained by X-ray fluorescence) SEM Leica Cambridge light = heavy element (here Ti) Information about the surface Stereoscan 360 FE dark = lighter elements Chip top view Chip side view (up to 25 keV electron energy) topography Molten material in the corner of the gate pad in a defective MOSFET (here interlayer oxide) can be identified as Silicon by means of energy dispersive X-ray analysis IR-Photoemission microscopy (while Hamamatsu PHEMOS 200 Hardware Setup Process control during layer-by-layer chemical reprocessing of an IC operating the device in leakage mode) (housed in light-sealed box) reveals the failure site (as indicated). Focused ion beam (FIB) – IR-Photoemission microscopy is a highly sensitive technique useful for Focused ion beam (FIB) – Application Examples ∑ Leakage current failure localization in diodes Principle and Hardware ∑ Gate oxide rupture defects detection in transistors Defective Device Reference device ∑ Substrate defect detection in the silicon FIB-System FEI Strata 205 1. 2.

Ion beam Liquid crystal thermography (LCT) column

High sensitivity High sensitivity CCD camera CCD camera

polarizer A polarizer A Unpolarized Make cross light Example I (Process Rotate & view Beam splitter section cross section Unpolarized Beam splitter control) – FIB cross mirror light mirror A FIB resembles a SEM, however, instead section for the analysis Example II (Failure analysis)- polarizer B polarizer B of electrons, Gallium ions are focused of layer parameters FIB cross section (chip with Example III (Failure analysis) – FIB cross section and raster-scanned over the sample. passivation cracks), proof of reveals process step, where an error occured during Modes of operation: ESD-FOS as reason for failure chip fabrication (voids in vias) objective objective ∑ Ion beam milling (using only Gallium ions)

Chip covered ∑ Gas assisted etching (GAE): Chip covered with heating Material-selective etching liquid crystal film with liquid crystal film ∑ Metal deposition for re-wiring ICs Liquid crystal below Liquid crystal above clearing point temperature clearing point temperature ∑ High resolution imaging (at low ion beam currents)

FIB-image (top GIS Gas Layout FIB-image & Liquid Gallium layer topography) layout superimposed Hot spots Injector Ion Source System Chip navigation (synchronization of layout and top layer Scanning Unit topography) allows precise access to buried metal lines. Pole Head/ FIB image – overview FIB detail image after Ga-ion beam Objective Lens of the defective corner slicing into the defect site Secondary Ion Detector Secondary Example IV (Chip modification) – Rewiring of metal lines from Metal2- Example V (Failure analysis) – FIB cross section Electron and Metal3-layer after opening locally shows reason for failure in an LED with leakage LCT helps to localize regions on a chip, where power Detector at the exact right position using chip current (failure site localization see section ‚IR dissipation (e.g. created by an electrical short) occurs Sample navigation. Photoemission-Microscopy‘ in upper left corner ) and creates heat. The hottest spots on a chip become visible as ‚black Schematic of a FIB spots‘ in the crossed polarizer light microscope image. RoodMicrotec - FA-Poster - www.roodmicrotec.com - …certified by RoodMicrotec 3