Nanoionic Proton Conductivity Enhancement in Solid-State Reactive
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Molecular and Polymer Nanodevices (Paper)
Molecular and Polymer Nanodevices Nikolai Zhitenev National Institute of Standards and Technology Over past years, the research and engineering community has been intensively looking for possibilities to extend of the information processing technologies into post- CMOS era. Recently, Nanotechnology Research Initiative formed by leading semiconductor companies has formulated a set of research vectors (Welser et al., 2008) to guide and to coordinate these efforts. Based on the analysis of the ultimate limitations of the present technology and on the observations of the research and development trends, one of the recommendations is the search of devices operating with the state variables different from an electronic charge. A solid-state switch where the computational state is defined by the spatial locations of heavy particles such as ions, atoms or molecular conformations is one of such possibilities. Possible advantage of heavier information carriers can be easily illustrated (Cavin et al., 2006). Scaling of CMOS devices operating with electronic charge will eventually reach the limit when logic or memory state decays because of electron tunneling under the barriers. For a given barrier height and width that is limited by the material constraints and the device size and by the requirement of the minimal power dissipation, carriers such as ions or atom that are thousands time heavier than electron offer much greater stability to the computational state. Ironically, the use of heavy carriers is absolutely impractical in larger devices because of much lower mobility. However, in a device of a few nanometer size, the ion/atom transport can be fast enough for practical applications. Short molecules and macromolecules can be used as active material for such switching devices. -
A Bipolar Electrochemical Approach to Constructive Lithography: Metal
ARTICLE pubs.acs.org/Langmuir A Bipolar Electrochemical Approach to Constructive Lithography: Metal/Monolayer Patterns via Consecutive Site-Defined Oxidation and Reduction † † ‡ † † Assaf Zeira, Jonathan Berson, Isai Feldman, Rivka Maoz,*, and Jacob Sagiv*, † ‡ Departments of Materials and Interfaces and Chemical Research Support, The Weizmann Institute of Science, Rehovot 76100, Israel bS Supporting Information ABSTRACT: Experimental evidence is presented, demonstrat- ing the feasibility of a surface-patterning strategy that allows stepwise electrochemical generation and subsequent in situ metallization of patterns of carboxylic acid functions on the outer surfaces of highly ordered OTS monolayers assembled on silicon or on a flexible polymeric substrate. The patterning process can be implemented serially with scanning probes, which is shown to allow nanoscale patterning, or in a parallel stamping configuration here demonstrated on micrometric length scales with granular metal film stamps sandwiched between two monolayer-coated substrates. The metal film, consisting of silver deposited by evaporation through a patterned contact mask on the surface of one of the organic monolayers, functions as both a cathode in the printing of the monolayer patterns and an anodic source of metal in their subsequent metallization. An ultrathin water layer adsorbed on the metal grains by capillary condensation from a humid atmosphere plays the double role of electrolyte and a source of oxidizing species in the pattern printing process. It is shown that control over both the direction of pattern printing and metal transfer to one of the two monolayer surfaces can be accomplished by simple switching of the polarity of the applied voltage bias. Thus, the patterned metal film functions as a consumable “floating” stamp capable of two-way (forwardÀbackward) electrochemical transfer of both information and matter between the contacting monolayer surfaces involved in the process. -
Nanoionics-Based Resistive Switching Memories
REVIEW ARTICLES | INSIGHT Nanoionics-based resistive switching memories Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues. 1,2 3,4 RAINER WASER * AND MASAKAZU AONO ‘M’ stands for a similarly large variety of metal electrodes including 1Institut für Werkstoffe der Elektrotechnik 2, RWTH Aachen University, 52056 electron-conducting non-metals. A first period of high research Aachen, Germany activity up to the mid-1980s has been comprehensively reviewed 2Institut für Festkörperforschung/CNI—Center of Nanoelectronics for elsewhere2–4. The current period started in the late 1990s, triggered Information Technology, Forschungszentrum Jülich, 52425 Jülich, Germany by Asamitsu et al.5, Kozicki et al.6 and Beck et al.7. 3Nanomaterials Laboratories, National Institute for Material Science, Before we turn to the basic principles of these switching 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan phenomena, we need to distinguish between two schemes with 4ICORP/Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, respect to the electrical polarity required for resistively switching Saitama 332-0012, Japan MIM systems. -
A Nanoscale Study of Mosfets Reliability and Resistive Switching in RRAM Devices
ADVERTIMENT. Lʼaccés als continguts dʼaquesta tesi queda condicionat a lʼacceptació de les condicions dʼús establertes per la següent llicència Creative Commons: http://cat.creativecommons.org/?page_id=184 ADVERTENCIA. El acceso a los contenidos de esta tesis queda condicionado a la aceptación de las condiciones de uso establecidas por la siguiente licencia Creative Commons: http://es.creativecommons.org/blog/licencias/ WARNING. The access to the contents of this doctoral thesis it is limited to the acceptance of the use conditions set by the following Creative Commons license: https://creativecommons.org/licenses/?lang=en Universitat Autònoma de Barcelona Escola d’Enginyeria Electronic Engineering Department A nanoscale study of MOSFETs reliability and Resistive Switching in RRAM devices A dissertation submitted by Qian Wu in fulfillment of the requirements for the Degree of Doctor of Philosophy in Electronic and Telecommunication Engineering Supervised by Dr. Marc Porti i Pujal Bellaterra, November 2016 Universitat Autònoma de Barcelona Escola d’Enginyeria Electronic Engineering Department Dr. Marc Porti i Pujal, associate professor of the Electronic Engineering Department of the Universitat Autònoma de Barcelona, Certifies That the dissertation: A nanoscale study of MOSFETs reliability and Resistive Switching in RRAM devices submitted by Qian Wu to the School of Engineering in fulfillment of the requirements for the Degree of Doctor in the Electronic and Telecommunication Engineering Program, has been performed under his supervision. Dr. Marc Porti Bellaterra, November of 2016 To my family Acknowledgement The four years’ doctoral study is a significant and unforgettable experience for me. Many kind-hearted people give me a great amount of help, professional advice and encouragement. -
Nanoionics of Advanced Superionic Conductors
306 Ionics 11 (2005) Nanoionics of Advanced Superionic Conductors A.L. Despotuli, A.V. Andreeva and B. Rambabu* Institute of Microelectronics Technology & High Purity Materials RAS, 142432 Chernogolovka, Moscow Region, Russia *Southern University and A&M College, Baton Rouge, Louisiana, 70813 USA ~E-mail: [email protected] (A.L. Despotuli) Abstract. New scientific direction - nanoionics of advanced superionic conductors (ASICs) was proposed. Nanosystems of solid state ionics were divided onto two classes differing by an opposite influence of crystal structure defects on the ionic conductivity oi (energy activation E): 1) nanosystems on the base compounds with initial small o~ (large values of E); and II) nanosystems of ASICs (nano-ASICs) with E = 0.1 eV. The fundamental challenge of nanoionics as the conservation of fast ion transport (FIT) in nano-ASICs on the level of bulk crystal was first recognized and for the providing of FIT in nano- ASICs the conception of structure-ordered (coherent) ASIC//indifferent electrode (IE) hetero- boundaries was proposed. Nano-ASIC characteristic parameter P = d/Xo (d is the thickness of ASIC layer with the defect crystal structure at the heteroboundary, and Ao is the screening length of charge for mobile ions of the bulk of ASIC) was introduced. The criterion for a conservation of FIT in nano-ASIC is P = 1. It was shown that at the equilibrium conditions the contact potentials V at the ASIC//IE coherent heterojunctions in nano-ASICs are V << keT/e. Interface engineering approach "from advanced materials to advanced devices" was proposed as fundamentals for the development of applied nanoionics. -
Resistive States in Strontium Titanate Thin Films: Bias Effects and Mechanisms at High and Low Temperature
J Electroceram DOI 10.1007/s10832-017-0081-2 Resistive states in strontium titanate thin films: Bias effects and mechanisms at high and low temperature M. Kubicek1 & S. Taibl1 & E. Navickas1 & H. Hutter1 & G. Fafilek1 & J. Fleig1 Received: 11 November 2016 /Accepted: 15 March 2017 # The Author(s) 2017. This article is published with open access at Springerlink.com Abstract A study on charge transport properties of thin film 1 Introduction Fe-doped SrTiO3 epitaxially grown on Nb-doped SrTiO3 is reported. Electric measurements between 350 °C and 750 °C Strontium titanate is a model electroceramic and among the show a transition from predominant ionic to electronic con- best investigated oxide materials [1, 2]. It adopts the cubic duction and lower conductivity of the thin films compared to perovskite structure ABO3 and crystallizes in space group the bulk of polycrystalline samples. Defect chemical changes Pm3m. Nominally undoped SrTiO3 behaves like a slightly at elevated temperature were investigated by applying a bias p-doped material, but by varying temperature and oxygen par- voltage. A model is described which successfully predicts tial pressure, its electric conductivity can be changed between additional features such as inductive loops or extra semicircles predominantly electronic via either electrons or electron holes measureable by impedance spectroscopy as well as the com- or predominantly ionic via oxygen vacancies [3–7]. The oxy- plicated time dependence of electric DC-measurements. With gen exchange reaction at the surface and a resulting change in this model it is also possible to calculate the negligibly small oxygen non-stoichiometry δ in SrTiO3-δ governs these transi- ionic conductivity next to the dominating electronic conduc- tions at intermediate temperatures [4]. -
Structural and Electrical Characterization of a Novel Mixed Conductor: Ceo<Sub>2</Sub>
University of South Carolina Scholar Commons Faculty Publications Mechanical Engineering, Department of 2000 Structural and Electrical Characterization of a Novel Mixed Conductor: CeO2 - Sm2O3 - ZrO2 Solid Solution W. Huang P. Shuk M. Greenblatt M. Croft Fanglin Chen University of South Carolina - Columbia, [email protected] See next page for additional authors Follow this and additional works at: https://scholarcommons.sc.edu/emec_facpub Part of the Applied Mechanics Commons, Materials Chemistry Commons, and the Other Mechanical Engineering Commons Publication Info Published in Journal of The Electrochemical Society, Volume 147, Issue 11, 2000, pages 4196-4202. ©Journal of The Electrochemical Society 200, The Electrochemical Society. © The Electrochemical Society, Inc. [year]. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The ra chival version of this work was published in Journal of The Electrochemical Society. Publisher’s Version: http://dx.doi.org/10.1149/1.1394040 Huang, W., Shuk, P., Greenblatt, M., Croft, M., Chen, F., & Liu, M. (2000). Structural and Electrical Characterization of a Novel Mixed Conductor: CeO2 - Sm2O3 - ZrO2 Solid Solution. Journal of The Electrochemical Society, 147 (11), 4196 – 4202. http://dx.doi.org/ 10.1149/1.1394040 This Article is brought to you by the Mechanical Engineering, Department of at Scholar Commons. It has been accepted for inclusion in Faculty Publications by an authorized administrator of Scholar Commons. For more information, please contact [email protected]. Author(s) W. Huang, P. Shuk, M. Greenblatt, M. Croft, Fanglin Chen, and M. -
Oxide Ion Conductors, Mixed Conductors and Their Solid Oxide Fuel Cell Applications
Oxide ion conductors, mixed conductors and their solid oxide fuel cell applications facciones adsorbente-adsorbato tienen lugar en cualquier parte de BIBLIOGRAFÍA la superficie y con una frecuencia parecida (según la zona de ener gías). Mientras que los materiales ortorrómbicos y fundamental 1. SAINT FLOUR, C. y PAPIER, E.: Gas-solid chromatography. A method mente aquél que es muy rico en oxígeno presenta una superficie of measuring surface free energy characteristics of short glass fibers. muy heterogénea ya que todos los centros de adsorción se encuen 1. Through Adsorption Isoterms. Ind. Eng. Chem. Prod. Res. Dev., tran en un intervalo muy estrecho de energías a la vez que la fre 21 (1982), 337-341. cuencia de dichas interacciones es bastante elevada. 2. LIGNER, G., SDQI, M., JAGIELLO, J., BALARD, H. y PAPIER, E.: Cha racterization of specific interactions capacity of solid surfaces by ad sorption of alkanes and alkanes. Part II. Adsorption on crystalline sili ca laser surfaces. Chromatographia, 29 (1990), 35-38. 4. CONCLUSIONES 3. TARTAJ, J., MOURE, C, DURAN, P., GARCÍA-FIERRO, J. L. y COLINO, J.: Processing and properties of superconducting YBa2Cu307_j^ pow Estos resultados de la CIGS permite caracterizar las superficies ders by single-step calcining in air. J. Mater. Sei., 26 (1991), 6135-6143. de polvos YBaCuO. 4. HoBSON, J. P.: Analysis of physical adsorption isotherms on hetero Los calores de adsorción indican una débil interacción entre los geneous surfaces at very low pressures. Can. J. Phys., 43 (1965), 1941-1949. aléanos y las superficies de los polvos YBaCuO. 5. RuDZiNSKi, W., NAKSMUNDZKI, A., LEBODA, E. -
Electrolytic Behavior of Yttria and Yttria Stabilized Hafnia Jon David Schieltz Iowa State University
Iowa State University Capstones, Theses and Retrospective Theses and Dissertations Dissertations 1970 Electrolytic behavior of yttria and yttria stabilized hafnia Jon David Schieltz Iowa State University Follow this and additional works at: https://lib.dr.iastate.edu/rtd Part of the Ceramic Materials Commons, and the Chemical Engineering Commons Recommended Citation Schieltz, Jon David, "Electrolytic behavior of yttria and yttria stabilized hafnia" (1970). Retrospective Theses and Dissertations. 4263. https://lib.dr.iastate.edu/rtd/4263 This Dissertation is brought to you for free and open access by the Iowa State University Capstones, Theses and Dissertations at Iowa State University Digital Repository. It has been accepted for inclusion in Retrospective Theses and Dissertations by an authorized administrator of Iowa State University Digital Repository. For more information, please contact [email protected]. 70-25,820 SCHIELTZ, Jon David, 1938- ELECTROLYTIC BEHAVIOR OF YTTRIA AND YTTRIA STABILIZED HAFNIA. Iowa State University, Ph.D., 1970 Engineering, chemical University Microfilms, A XEROXCompany, Ann Arbor, Michigan THTq r^^qPRTATTON HAS RRPN MTPRnFTT.MPn PXACTT.Y AP RPrCTVCn ELECTROLYTIC BEHAVIOR OF YTTRIA AND YTTRIA STABILIZED HAFNIA by Jon David Schieltz A Dissertation Submitted to the Graduate Faculty in Partial Fulfillment of The Requirements for the Degree of DOCTOR OF PHILOSOPHY Major Subject; Ceramic Engineering Approved: Signature was redacted for privacy. In Charge of Major Work Signature was redacted for privacy. Head -
Engineering Heteromaterials to Control Lithium Ion Transport Pathways Received: 14 August 2015 Yang Liu1,2, Siarhei Vishniakou3, Jinkyoung Yoo4 & Shadi A
www.nature.com/scientificreports OPEN Engineering Heteromaterials to Control Lithium Ion Transport Pathways Received: 14 August 2015 Yang Liu1,2, Siarhei Vishniakou3, Jinkyoung Yoo4 & Shadi A. Dayeh3,5 Accepted: 18 November 2015 Safe and efficient operation of lithium ion batteries requires precisely directed flow of lithium ions and Published: 21 December 2015 electrons to control the first directional volume changes in anode and cathode materials. Understanding and controlling the lithium ion transport in battery electrodes becomes crucial to the design of high performance and durable batteries. Recent work revealed that the chemical potential barriers encountered at the surfaces of heteromaterials play an important role in directing lithium ion transport at nanoscale. Here, we utilize in situ transmission electron microscopy to demonstrate that we can switch lithiation pathways from radial to axial to grain-by-grain lithiation through the systematic creation of heteromaterial combinations in the Si-Ge nanowire system. Our systematic studies show that engineered materials at nanoscale can overcome the intrinsic orientation-dependent lithiation, and open new pathways to aid in the development of compact, safe, and efficient batteries. Understanding the transport of lithium (Li) ions and electrons in the electrodes/electrolyte is crucial for achieving superior performance of lithium ion batteries (LIBs) with high energy/power density and good cyclability. These battery characteristics are highly desirable for next generation portable electronics and plug-in electric vehicles1,2. Interfaces inside the batteries, such as within the electrode materials and between electrode and electrolyte, have a critical effect on the Li ion transport3–9. Recently, surface coating on the active materials has been demonstrated to be an efficient method to improve battery performance, which essentially introduce or modify interfaces in the electrodes10–15. -
Nanoparticulate Cathode Films for Low Temperature Solid Oxide Fuel Cells
Nanoparticulate Cathode Films for Low Temperature Solid Oxide Fuel Cells Vom Fachbereich Material- und Geowissenschaften der Technischen Universität Darmstadt zur Erlangung des akademischen Titels Doktor-Ingenieur (Dr.-Ing.) genehmigte Dissertation von MSc. Azad Jaberi Darbandi aus Teheran Referent: Prof. Dr.-Ing. Horst Hahn Koreferent: Prof. Dr. Christina Roth Tag der Einreichung: 27. März 2012 Tag der mündlichen Prüfung: 29. Mai 2012 Darmstadt 2012 D17 CONTENTS 1 Introduction.................................................................................................................................1 2 Basics ..........................................................................................................................................3 2.1 Fuel Cells............................................................................................................................3 2.2 Fuel Cell Generalities.........................................................................................................5 Advantages of fuel cells..............................................................................................................5 Disadvantages of fuel cells .........................................................................................................5 Fuel Cell Types...........................................................................................................................5 Solid Oxide Fuel Cell (SOFC)....................................................................................................6 -
Optical Memristive Switches
J Electroceram DOI 10.1007/s10832-017-0072-3 Optical memristive switches Ueli Koch1 & Claudia Hoessbacher1 & Alexandros Emboras1 & Juerg Leuthold1 Received: 18 September 2016 /Accepted: 6 February 2017 # The Author(s) 2017. This article is published with open access at Springerlink.com Abstract Optical memristive switches are particularly inter- signals. Normally, the operation speed is moderate and in esting for the use as latching optical switches, as a novel op- the MHz range. The application range includes usage as a tical memory or as a digital optical switch. The optical new kind of memory which can be electrically written and memristive effect has recently enabled a miniaturization of optically read, or usage as a latching switch that only needs optical devices far beyond of what seemed feasible. The to be triggered once and that can keep the state with little or no smallest optical – or plasmonic – switch has now atomic scale energy consumption. In addition, they represent a new logical andinfactisswitchedbymovingsingleatoms.Inthisreview, element that complements the toolbox of optical computing. we summarize the development of optical memristive The optical memristive effect has been discovered only switches on their path from the micro- to the atomic scale. recently [1]. It is of particular interest because of strong Three memristive effects that are important to the optical field electro-optical interaction with distinct transmission states are discussed in more detail. Among them are the phase tran- and because of low power consumption and scalability [8]. sition effect, the valency change effect and the electrochemical Such devices rely in part on exploiting the electrical metallization.