Evolution of Lattice Distortions in 4H-Sic Wafers with Varying Doping

www.nature.com/scientificreports OPEN Evolution of lattice distortions in 4H‑SiC wafers with varying doping Nadeemullah A. Mahadik1*, Hrishikesh Das2, Stanislav Stoupin3, Robert E. Stahlbush1, Peter L. Bonanno1, Xueping Xu4, Varatharajan Rengarajan4 & Gary E. Ruland4 Lattice distortions (LD) in 4H‑silicon carbide (SiC) wafers were quantifed using synchrotron X‑ray rocking curve mapping (RCM), and were resolved into their two components of lattice strain (Δd/d) and lattice plane curvature (LPC) for 150 mm diameter wafers. The evolution of these LDs were investigated for three sequential substrates from the same boule, one of which was the substrate reference, and the other two had a 10 µm thick, 1 × 1017 and 4 × 1014 cm‑3 n‑type doped epitaxial layer. The lattice strain, Δd/d, was highest for the lowest doped wafer due to higher mismatch with the substrate wafer. After epitaxial layer growth, the LPC variation across the wafer increases by a factor of 2, irrespective of doping. The LPC maps indicate presence of a twist in the lattice planes that increases after epitaxial growth. The LPC component has higher infuence on wafer shape change, which can reduce device yields. The lattice strain component predominantly afects the glide of basal plane dislocations (BPDs), thereby reducing device reliability. From analysis of peak widths, it was determined that threading dislocations in the top 6 microns of the wafer increase after epitaxial layer growth. Silicon Carbide (SiC) based power devices are a small but rapidly growing segment of the Si dominated power electronics market1,2. Adoption of the SiC devices has been increasing rapidly, but is still limited by cost and less well established reliability 3–5. Te presence and evolution of strain in SiC wafers during epitaxial growth and device fabrication pose both cost and reliability concerns. Following the SiC substrate growth by the non- equilibrium, physical vapor transport technique (PVT), SiC substrates have residual strain and lattice distortions (LD) that varies throughout the boule. During epitaxial layer growth or device fabrication steps, the substrate LD can cause wafer shape changes, and the evolution of these distortions has not yet been quantifed. Te device yield concern is that the wafer shape changes driven by LD can result in unpredictable wafer shape change. Excessive LDs can cause failure in fabrication steps such as lithography problems from inability to accommodate the wafer curvature in mask steppers, and wafer damage from handling of distorted wafers, which suppresses net device yield. Te strain from LDs is responsible for the stress that causes the basal plane dislocations (BPD) in SiC epitaxial layers to glide and to afect a larger wafer area. For example, a single gliding BPD can create an extended defect such as a half-loop array (HLA) that will afect any device along its path. During device operation, they generate stacking faults that expand and degrade the conductivity of the device drif layer6–9. Te BPDs have also been shown to generate stacking faults in unipolar devices by stressing the body diode during switching 10,11. Hence, BPD glide is ofen detrimental to device reliability and performance. Lattice distortions have two components namely, lattice strain (Δd/d), and lattice plane curvature (LPC). Tey arise from diferent origins in the SiC wafers such as residual strain in the substrates. For both substrates and epitaxial layers LDs can arise from doping variation, thermal stress, and extended defect concentrations. It is very important to quantify them separately in order to evaluate how the diferent origins infuence extended defects and device yield. Additionally, how the two LD components evolve with epitaxial layer growth and doping has not been systematically investigated. Tis is important to understand which component varies and can lead to adverse efects in device fabrication and reliability. In this work, lattice distortions are measured by using synchrotron X-ray rocking curve mapping (RCM) technique12, which measures X-ray Bragg peak variation over 1US Naval Research Laboratory, Washington, DC, USA. 2On Semiconductor, South Portland, ME, USA. 3Cornell High Energy Synchrotron Source, Ithaca, NY, USA. 4II-VI Advanced Materials, Pine Brook, NJ 07058, USA. *email: [email protected] SCIENTIFIC REPORTS | (2020) 10:10845 | https://doi.org/10.1038/s41598-020-67900-y 1 Vol.:(0123456789) www.nature.com/scientificreports/ the entire SiC wafers. Te two LD components are explained below; along with how they both afect the Bragg peak variation, and how they can be separately quantifed. Two types of lattice distortions. Strain in crystalline materials has been measured by using X-ray dif- fraction measurements for many decades. Te crystalline planes difract the incident X-rays producing peaks at the Bragg scattering angle. Te difracted peaks from diferent regions in a wafer will shif by the angle ‘Δw’, and this shif is caused by the lattice parameter variation, also known as, the lattice strain, ‘Δd/d’ and by the lattice plane curvature (LPC) according to the relation13, �w = tanθB�d/d + nr • nm�ρ (1) where θB is the reference Bragg angle. Te reference point on the wafer is taken from the median point of the X-ray peak positions collected. Te unit vector, nr , is the direction of the rocking curve rotation axis, nm is the direction of the tilt axis, and Δρ is the tilt angle. Hence, at the reference point the dot product nr • nm is 1. Te frst term of Eq. (1) is the contribution to w due to the lattice strain and the second term is the contribution due to LPC. Te illustration in Fig. 1a show fve 4H-SiC unit cells along the a-axis. Te illustration in Fig. 1b shows two rows of 4H-SiC unit cells stacked along the c-axis (2 layers each), and 7 unit cells along the a-axis thereby showing a small ensemble of the 4H-SiC structure. Tese two small ensembles illustrate how the two LD components will cause peak shifs in the X-ray RCM measurements, and how they can be directly measured. In Fig. 1a, the fve 4H-SiC unit cells are drawn in two groupings, with artifcial space between them for clarity. Te ‘a’ and ‘c’ lattice parameters are marked. Tese two groupings have diferent a, and c lattice parameters that can be caused by variation in epitaxial layer doping. Te unit cells are scaled in order to maintain the Poisson’s ratio of 0.18 in the 4H-SiC hexagonal structure14. Tis means when the a- parameter is enlarged, the c- parameter is reduced, and vice versa. When symmetric X-ray Bragg refections are measured along the c-plane, the 2 diferent spectra shown above the unit cell groupings illustrate how the X-ray peak shifs will occur due to the lattice strain, Δd/d. A smaller c-parameter will shif the peak to higher angles, whereas larger c-parameter will cause a peak shif to lower angles. Tis lattice strain can have origins due to doping variations, and thermal stress 15–17. In Fig. 1b, a similar unit cell lattice structure of 4H-SiC is depicted with a lattice plane curvature (bow/warp). Te LPC originates from residual strain from substrate growth and extended defects, such as dislocations, in both substrate and epitaxial layers. It can be observed from the schematic in Fig. 1b, the curvature at a local region is infuenced by forces exerted by adjacent regions. Tis is diferent from the Δd/d, which is a dilation/compres- sion from within the lattice. Te lattice curvature causes the difracted X-rays peaks to shif corresponding to the local slope of the curvature. Notice that the range of peak shif (x-axis) for the LPC component is drawn to be ~ 10 × larger than the x-axis range in Fig. 1a. Tis is expected in typical SiC wafers. In case of Fig. 1b, the x-axis is also plotted from positive to negative for fgure clarity. Te LPC variation can lead to wafer misalignment during lithography. In order to precisely quantify the components of LD in this work, we have performed a sys- tematic investigation of LD evolution in a series of same boule adjacent wafers with and without epitaxial layers having varying doping. Tis includes determining the LD contributions from Δd/d and lattice plane curvature. In order to deconvolve the two LD components, we have used the RCM technique described by Bonse 18 and Kikuta et al.19, where the same Bragg condition peak shifs, Δw, across a region in a wafer are collected at two azimuthal conditions that are mutually 180° apart. In this case, the normal vector in Eq. (1) changes sign and we obtain the two LD components using the relations: �w0o = tanθB�d/d + LPC (2) �w180o = tanθB�d/d − LPC (3) Taking the sum and diference of eqns. (2) and (3), the two components of strains can be independently computed. Tis technique has been used to precisely measure the origin of strains in a variety of substrates and epitaxial layers20–24. Results and discussion Lattice strain (Δd/d) maps and LPC maps were generated for the three SiC sequential wafers labeled sample A: substrate only, sample B: epitaxial layer with 1 × 1017 cm-3 n-type doping and sample C: epitaxial layer with 4 × 1014 cm-3 n-type doping. Te doping concentration was measured by standard mercury probe measurements. In the top row of Fig. 2, the variation of lattice spacing, Δd/d, is shown for the three SiC wafers. For the SiC(0008) Bragg refection used, the dynamical difraction penetration depth is 5.83 µm25,26. Te X-ray peaks that were collected are generally single peaks with very small peak widths (~ 15 µrad), and the repeatability of the goniometer is 1 µrad.

Load more