GEM NEWS INTERNATIONAL GEMS & GEMOLOGY SUMMER 2015 Sodic Clinopyroxene
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The Forsterite-Anorthite-Albite System at 5 Kb Pressure Kristen Rahilly
The Forsterite-Anorthite-Albite System at 5 kb Pressure Kristen Rahilly Submitted to the Department of Geosciences of Smith College in partial fulfillment of the requirements for the degree of Bachelor of Arts John B. Brady, Honors Project Advisor Acknowledgements First I would like to thank my advisor John Brady, who patiently taught me all of the experimental techniques for this project. His dedication to advising me through this thesis and throughout my years at Smith has made me strive to be a better geologist. I would like to thank Tony Morse at the University of Massachusetts at Amherst for providing all of the feldspar samples and for his advice on this project. Thank you also to Michael Jercinovic over at UMass for his help with last-minute carbon coating. This project had a number of facets and I got assistance from many different departments at Smith. A big thank you to Greg Young and Dale Renfrow in the Center for Design and Fabrication for patiently helping me prepare and repair the materials needed for experiments. I’m also grateful to Dick Briggs and Judith Wopereis in the Biology Department for all of their help with the SEM and carbon coater. Also, the Engineering Department kindly lent their copy of LabView software for this project. I appreciated the advice from Mike Vollinger within the Geosciences Department as well as his dedication to driving my last three samples over to UMass to be carbon coated. The Smith Tomlinson Fund provided financial support. Finally, I need to thank my family for their support and encouragement as well as my friends here at Smith for keeping this year fun and for keeping me balanced. -
Shear Zone Initiation in the Marcy Anorthosite Massif, Adirondacks, New York, USA James Hodge University of Maine, [email protected]
The University of Maine DigitalCommons@UMaine Electronic Theses and Dissertations Fogler Library Summer 8-23-2019 Fractures, Fluids, and Metamorphism: Shear Zone Initiation in the Marcy Anorthosite Massif, Adirondacks, New York, USA James Hodge University of Maine, [email protected] Follow this and additional works at: https://digitalcommons.library.umaine.edu/etd Part of the Geochemistry Commons, Geology Commons, and the Tectonics and Structure Commons Recommended Citation Hodge, James, "Fractures, Fluids, and Metamorphism: Shear Zone Initiation in the Marcy Anorthosite Massif, Adirondacks, New York, USA" (2019). Electronic Theses and Dissertations. 3050. https://digitalcommons.library.umaine.edu/etd/3050 This Open-Access Thesis is brought to you for free and open access by DigitalCommons@UMaine. It has been accepted for inclusion in Electronic Theses and Dissertations by an authorized administrator of DigitalCommons@UMaine. For more information, please contact [email protected]. FRACTURES, FLUIDS, AND METAMORPHISM: SHEAR ZONE INITIATION IN THE MARCY ANORTHOSITE MASSIF, ADIRONDACKS, NEW YORK, USA By James Hodge B.S. College of Saint Rose, 2017 A Thesis Submitted in Partial Fulfillment of the Requirements for the Degree of Master of Science (in Earth and Climate Sciences) The Graduate School The University of Maine August 2019 Advisory Committee: Scott Johnson, Professor and Director School of Earth and Climate Sciences, Advisor Chris Gerbi, Professor School of Earth and Climate Sciences, Advisor Alicia Cruz-Uribe, Professor School of Earth and Climate Sciences Martin Yates, Professor School of Earth and Climate Sciences FRACTURES, FLUIDS, AND METAMORPHISM: SHEAR ZONE INITIATION IN THE MARCY ANORTHOSITE MASSIF, ADIRONDACKS, NEW YORK, USA By James Hodge Thesis Advisors: Dr. -
1 Revision 2 1 Stability Field of the Cl-Rich Scapolite Marialite 2 3 Kaleo
1 Revision 2 2 Stability field of the Cl-rich scapolite marialite 3 4 Kaleo M. F. Almeida1,2* 5 David M. Jenkins1 6 7 8 1 Department of Geological Sciences and Environmental Studies 9 Binghamton University 10 Binghamton, NY, 13902 11 2 Present address: Department of Earth and Environmental Sciences, Rutgers University, 12 Newark, NJ 07102 13 14 *Corresponding author 15 16 17 1 18 Abstract 19 Scapolites are widespread rock-forming aluminosilicates, appearing in metasomatic and igneous 20 environments, and metamorphic terrains. Marialite (Na4Al3Si9O24Cl) is the Cl-rich end member 21 of the group. Even though Cl-rich scapolite is presumably stable over a wide range of pressure 22 and temperature, little is known about its stability field. Understanding Cl-rich scapolite 23 paragenesis is important since it can help identifying subsurface fluid flow, metamorphic and 24 isotopic equilibration. Due to its metasomatic nature Cl-rich scapolite is commonly reported in 25 economic ore deposits, hence it is of critical interest to the mineral resource industries who seek 26 to better understand processes contributing to mineralization. In this experimental study two 27 reactions were investigated. The first one was the anhydrous reaction of albite + halite to form 28 marialite (3NaAlSi3O8 + NaCl = Na4Al3Si9O24Cl (1)). The second reaction was the 29 hydrothermal equivalent described by H2O + Na4Al3Si9O24Cl = 3NaAlSi3O8 + liquid (2), where 30 the liquid is assumed to be a saline-rich hydrous-silicate melt. Experiments were performed 31 using a piston-cylinder press and internally heated gas vessels. The temperature and pressure 32 conditions range from 700-1050°C and 0.5-2.0 GPa, respectively. -
Optical Properties of Common Rock-Forming Minerals
AppendixA __________ Optical Properties of Common Rock-Forming Minerals 325 Optical Properties of Common Rock-Forming Minerals J. B. Lyons, S. A. Morse, and R. E. Stoiber Distinguishing Characteristics Chemical XI. System and Indices Birefringence "Characteristically parallel, but Mineral Composition Best Cleavage Sign,2V and Relief and Color see Fig. 13-3. A. High Positive Relief Zircon ZrSiO. Tet. (+) 111=1.940 High biref. Small euhedral grains show (.055) parallel" extinction; may cause pleochroic haloes if enclosed in other minerals Sphene CaTiSiOs Mon. (110) (+) 30-50 13=1.895 High biref. Wedge-shaped grains; may (Titanite) to 1.935 (0.108-.135) show (110) cleavage or (100) Often or (221) parting; ZI\c=51 0; brownish in very high relief; r>v extreme. color CtJI\) 0) Gamet AsB2(SiO.la where Iso. High Grandite often Very pale pink commonest A = R2+ and B = RS + 1.7-1.9 weakly color; inclusions common. birefracting. Indices vary widely with composition. Crystals often euhedraL Uvarovite green, very rare. Staurolite H2FeAI.Si2O'2 Orth. (010) (+) 2V = 87 13=1.750 Low biref. Pleochroic colorless to golden (approximately) (.012) yellow; one good cleavage; twins cruciform or oblique; metamorphic. Olivine Series Mg2SiO. Orth. (+) 2V=85 13=1.651 High biref. Colorless (Fo) to yellow or pale to to (.035) brown (Fa); high relief. Fe2SiO. Orth. (-) 2V=47 13=1.865 High biref. Shagreen (mottled) surface; (.051) often cracked and altered to %II - serpentine. Poor (010) and (100) cleavages. Extinction par- ~ ~ alleL" l~4~ Tourmaline Na(Mg,Fe,Mn,Li,Alk Hex. (-) 111=1.636 Mod. biref. -
Development of $^{100} $ Mo-Containing Scintillating
Development of 100Mo-containing scintillating bolometers for a high-sensitivity neutrinoless double-beta decay search E. Armengaud, C. Augier, A.S. Barabash, J.W. Beeman, T.B. Bekker, F. Bellini, A. Benoît, L. Bergé, T. Bergmann, J. Billard, et al. To cite this version: E. Armengaud, C. Augier, A.S. Barabash, J.W. Beeman, T.B. Bekker, et al.. Development of 100Mo-containing scintillating bolometers for a high-sensitivity neutrinoless double-beta decay search. Eur.Phys.J.C, 2017, 77 (11), pp.785. 10.1140/epjc/s10052-017-5343-2. hal-01669511 HAL Id: hal-01669511 https://hal.archives-ouvertes.fr/hal-01669511 Submitted on 11 Dec 2018 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. Eur. Phys. J. C (2017) 77:785 https://doi.org/10.1140/epjc/s10052-017-5343-2 Regular Article - Experimental Physics Development of 100Mo-containing scintillating bolometers for a high-sensitivity neutrinoless double-beta decay search E. Armengaud1, C. Augier2, A. S. Barabash3, J. W. Beeman4, T. B. Bekker5, F. Bellini6,7, A. Benoît8, L. Bergé9, T. Bergmann10, J. Billard2,R.S.Boiko11, A. Broniatowski9,12, V. Brudanin13, P. -
The Commercial Availability of Larger-Diameter Sic Substrates and Improved Crystalline Quality Has Fostered an Ever-Increasing I
THINK TANK Silicon carbide proving its value as a semiconductor substrate The commercial availability of larger-diameter SiC substrates and improved crystalline quality has fostered an ever-increasing interest in the development and manufacture of power electronic devices, exploiting the unique electrical and thermophysical properties of this wide-bandgap semiconductor material. Silicon carbide (SiC) isn’t a new material, but its use as a semiconductor substrate is helping to advance power electronics and high-frequency electronics applications. Silicon carbide is a compound semiconductor and wind energy; and industrial/commercial cost parity with silicon power devices in the material, synthesized by combining silicon applications such as server power supplies, years to come. and carbon, both from group IV of the UPS for data centers, motor drives and periodic table. It has superior properties medical imaging systems, all benefit from State-of-the-art bulk growth of SiC crystals relative to silicon, in terms of handling higher high-voltage and high-efficiency devices is carried out by the seeded sublimation voltages and temperatures. These increased made from SiC. The high-frequency devices process, often referred as the physical vapor capabilities give SiC-based chips the ability used in 5G telecommunication systems, such transport (PVT) growth method. to do tremendous work in small chip sizes. In as repeater stations, digital TV, radars and Conventional melt growth process adapted addition, SiC can switch efficiently at optoelectronic devices, also drive the for growing single crystal silicon can’t be incredible speeds. adoption of SiC material. adapted for SiC because of the lack of a stoichiometric liquid phase at reasonable Today, as markets and applications push Even though the SiC substrate cost is higher pressures. -
Growth from Melt by Micro-Pulling Down (Μ-PD) and Czochralski (Cz)
Growth from melt by micro-pulling down (µ-PD) and Czochralski (Cz) techniques and characterization of LGSO and garnet scintillator crystals Valerii Kononets To cite this version: Valerii Kononets. Growth from melt by micro-pulling down (µ-PD) and Czochralski (Cz) techniques and characterization of LGSO and garnet scintillator crystals. Theoretical and/or physical chemistry. Université Claude Bernard - Lyon I, 2014. English. NNT : 2014LYO10350. tel-01166045 HAL Id: tel-01166045 https://tel.archives-ouvertes.fr/tel-01166045 Submitted on 22 Jun 2015 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. N° d’ordre Année 2014 THESE DE L‘UNIVERSITE DE LYON Délivrée par L’UNIVERSITE CLAUDE BERNARD LYON 1 ECOLE DOCTORALE Chimie DIPLOME DE DOCTORAT (Arrêté du 7 août 2006) Soutenue publiquement le 15 décembre 2014 par VALERII KONONETS Titre Croissance cristalline de cristaux scintillateurs de LGSO et de grenats à partir de l’état liquide par les techniques Czochralski (Cz) et micro-pulling down (μ-PD) et leurs caractérisations Directeur de thèse : M. Kheirreddine Lebbou Co-directeur de thèse : M. Oleg Sidletskiy JURY Mme Etiennette Auffray Hillemans Rapporteur M. Alain Braud Rapporteur M. Alexander Gektin Examinateur M. -
CVD Growth of Sic for High-Power and High-Frequency Applications High-Power and High- Frequency Applications
Robin Karhu Linköping Studies in Science and Technology. Dissertation No. 1973 CVD growth of SiC for CVD growth of SiC for high-power and high-frequency applications and high-frequency high-power SiC for of growth CVD high-power and high- frequency applications Robin Karhu 2019 Linköping Studies in Science and Technology Dissertation No. 1973 CVD growth of SiC for high-power and high-frequency applications Robin Karhu Semiconductor Materials Division Department of Physics, Chemistry and Biology (IFM) Linköping University Se-581 83 Linköping, Sweden Linköping 2019 Cover: Image taken with an optical microscope using a Nomarski prism for contrast. The image is taken from a 4H-SiC homoepitaxial layer grown on on-axis substrate. The image depicts a sample covered in a step-like structure. During the course of the research underlying this thesis. Robin Karhu was enrolled in Agora Materiae, a multidisciplinary doctoral program at Linköping University, Sweden. © Copyright 2019 Robin Karhu, unless otherwise noted. CVD growth of SiC for high power and high frequency applications ISBN: 978-91-7685-149-4 ISSN: 0345-7524 Linköping Studies in Science and Technology, Dissertation No. 1973. Printed in Sweden by LiU-Tryck, Linköping 2019 To my family ABSTRACT Silicon Carbide (SiC) is a wide bandgap semiconductor that has attracted a lot of interest for electronic applications due to its high thermal conductivity, high saturation electron drift velocity and high critical electric field strength. In recent years commercial SiC devices have started to make their way into high and medium voltage applications. Despite the advancements in SiC growth over the years, several issues remain. -
First Scintillating Bolometer Tests of a CLYMENE R&D on Li2moo4
First scintillating bolometer tests of a CLYMENE R&D on Li2MoO4 scintillators towards a large-scale double-beta decay experiment G. Bu¸sea, A. Giulianib,c, P. de Marcillacb, S. Marnierosb, C. Nonesd, V. Novatib, E. Olivierib, D.V. Podab,e,∗, T. Redonb, J.-B. Sanda, P. Vebera,g, M. Vel´azqueza,f, A.S. Zolotarovad aICMCB, UMR 5026, CNRS-Universit´ede Bordeaux-INP, 33608 Pessac Cedex, France bCSNSM, Univ. Paris-Sud, CNRS/IN2P3, Universit´eParis-Saclay, 91405 Orsay, France cDISAT, Universit`adell’Insubria, 22100 Como, Italy dIRFU, CEA, Universit´eParis-Saclay, F-91191 Gif-sur-Yvette, France eInstitute for Nuclear Research, 03028 Kyiv, Ukraine fUniversit´eGrenoble Alpes, CNRS, Grenoble INP, SIMAP, 38402 Saint Martin d’H´eres, France gUniversit´eLyon, Universit´eClaude Bernard Lyon 1, CNRS, Institut Lumi´ere Mati´ere, UMR 5306, 69100 Villeurbanne, France Abstract A new R&D on lithium molybdate scintillators has begun within a project CLYMENE (Czochralski growth of Li2MoO4 crYstals for the scintillating boloMeters used in the rare EveNts sEarches). One of the main goals of the CLYMENE is a realization of a Li2MoO4 crystal growth line to be com- plementary to the one recently developed by LUMINEU in view of a mass production capacity for CUPID, a next-generation tonne-scale bolometric experiment to search for neutrinoless double-beta decay. In the present pa- per we report the investigation of performance and radiopurity of 158-g and 13.5-g scintillating bolometers based on a first large-mass (230 g) Li2MoO4 crystal scintillator developed within the CLYMENE project. In particular, a arXiv:1801.07909v2 [physics.ins-det] 8 Mar 2018 good energy resolution (2–7 keV FWHM in the energy range of 0.2–5 MeV), one of the highest light yield (0.97 keV/MeV) amongst Li2MoO4 scintillating bolometers, an efficient alpha particles discrimination (10σ) and potentially ∗Corresponding author Email address: [email protected] (D.V. -
Growing Large Size Complex Oxide Single Crystals by Czochralski Technique for Electronic Devices I.M
Vol. 124 (2013) ACTA PHYSICA POLONICA A No. 2 Special Anniversary Issue: Professor Jan Czochralski Year 2013 Invited Paper Growing Large Size Complex Oxide Single Crystals by Czochralski Technique for Electronic Devices I.M. Solskiia;∗, D.Yu. Sugaka;b and M.M. Vakiva;b aScientic Research Company Carat, 202, Stryjska st., Lviv, 79031, Ukraine bLviv Polytechnic National University, 12, Bandera st., Lviv, 79013, Ukraine This paper is devoted to the use and further development of the single crystal growing technique invented by Professor Jan Czochralski (18851953). The possibilities of the Czochralski technique are demonstrated. Further improvements were introduced at the Scientic Research Company Carat (Lviv, Ukraine) to grow large size complex oxide single crystals. The paper presents an overview of some single crystals grown with the use of a modied technology. Growth parameters and properties of resulting crystals are summarized to show a high potential of the Czochralski technique as an industrial technology to grow large-size, high quality, and structurally perfect single crystals of complex oxides. DOI: 10.12693/APhysPolA.124.314 PACS: 81.10.−h 1. Introduction in [10]. For example, the paper not only describes routine technologies to grow traditional activated garnet and Since the 1970s the electronic industry has been fac- vanadate crystals, but also considers how the Czochral- ing a strong demand for novel devices based on new ski method can be used to grow complex borate crystals physical principles. Examples are electro- and acousto- doped with rare-earth elements which have both laser -optic modulators and Q-switches, acoustoelectric delay and nonlinear optical properties. -
NASA Technical Memorandum
NASA Technical Memorandum NASA TM-100341 A PRELIMINARY REVIEW OF ORGANIC MATERIALS SINGLE CRYSTAL GROWTH BY THE CZOCHRALSKI TECHNIQUE By B. G. Penn, A. W. Shields, and D. O. Frazier Space Science Laboratory Science and Engineering Directorate September 1988 U89-1Ce56 uacla_ G3/76 C169012 NASA National Aeronautics and Space Administration George C. Marshall Space Flight Center MSFC-Form 3190 [Rev. May 1983) TABLE OF CONTENTS Page 1 I. INTRODUCTION ......................................................... II. REVIEW OF SOME KEY WORK ON GROWTH OF SINGLE CRYSTALS OF ORGANIC COMPOUNDS BY THE CZOCHRALSKI METHOD ................. REVIEW OF PREPARATION METHOD;_ OF THIN SPECIMENS III. 4 FROM ORGANIC BULK CRYSTALS ....................................... A. Cleaving ............................................................ B. Cutting ............................................................. C. Polishing ............................................................ PROJECTED ADVANTAGES OF CRYSTAL GROWTH IN IV. 5 MICROGRAVITY ......................................................... 7 V. CONCLUSION ............................................................ 8 REFERENCES .................................................................. PRI_EDING PAGE BL_NK NOT PU,M_,,D" III t PAGE.__]___ INI_MW_tY _tAN_ LIST OF ILLUSTRATIONS Figure Title Page 1. Czochralski apparatus used by Bleay et al. [11] to grow single crystals of benzil ............................................. 2 o Czochralski apparatus used by Cook and Gwan [ 14] to grow single crystals -
Semiconductor Core Fibres
REVIEW ARTICLE https://doi.org/10.1038/s41467-021-24135-3 OPEN Semiconductor core fibres: materials science in a bottle ✉ Ursula J. Gibson 1,2 , Lei Wei 3 & John Ballato 4 Novel core fibers have a wide range of applications in optics, as sources, detectors and nonlinear response media. Optoelectronic, and even electronic device applications are now possible, due to the introduction of methods for drawing fibres with a semiconductor core. fi 1234567890():,; This review examines progress in the development of glass-clad, crystalline core bres, with an emphasis on semiconducting cores. The underlying materials science and the importance of post-processing techniques for recrystallization and purification are examined, with achievements and future prospects tied to the phase diagrams of the core materials. ilica glass optical fibres are ubiquitous, with their high transparency and design flexibility Senabling the high speed and reliability of modern communications. These attributes of silica-based glasses have driven many complementary applications. Recently, the use of silica in some specialty applications has been challenged by so-called ‘multimaterial’ or ‘hybrid’ fibres, in which disparate families of materials are co-processed into the same fibre1–5. Whereas conventional fibres possess a core and cladding that are composi- tionally similar (e.g., silica cladding and doped silica core), the multimaterial fibres more fully utilise the stunning breadth of the periodic table. With a broader range of core and cladding materials comes a wider variety of interesting and useful properties. Notable examples include polymer/chalcogenide glass ‘omniguide fibres’6 and YAG-derived glass laser fibres7. One fibre material pairing that is under active development is that of a glass cladding and a crystalline semiconductor core.