JSC “Voskhod” KRLZ JSC “Voskhod” KRLZ

DEAR CONSUMERS! I FLAT SECTION

Thank you for your interest in the products of our company JSC “Voskhod” – 1.1 Multilayered clad metal bands Kaluga Electron Tube Plant. Multilayered clad metal band consists of two or more layers of dissimilar JSC “Voskhod” KRLZ was founded in 1960. It is one of the largest manufac- metals bonded together by cold rolling. Bimetallic band combines qualities of turers of special purpose electronic components in Russia. One of the priority the base metal and that of the cladding which makes it possible to create qualities lines of our development has become a production of materials for electronics unattainable by monometallic material as well as to make this band cheaper. manufacturing industry: an assortment of rolled metal bands from nonferrous, Multilayered clad metal bands are made from different metals and alloys up to ferrous and high alloys; multilayered clad metal bands, high alloyed bimetallic 200 mm wide. The bands are manufactured by cold clad rolling using rolling- micron scale wire; pseudo alloys; epitaxial structures GaAlAs; amorphous tapes. mill machinery. S t r i p Band basic dimensions:

JSC “Voskhod” KRLZ employs flexible system of deliveries and payment C l a d d i n g В – width, Н – thickness, terms (prepayment, partial prepayment, deferring of payments) as well as indi- h0 , hз – cladding thickness, B a s e vidual approach to consumers. hп – cladding strip thickness, a, b – width from the band edge to C l a d d i n g We invite you to negotiate contracts for the supply of our products in 2011 the cladding strip, and we firmly believe that JSC “Voskhod” KRLZ will become your permanent с – cladding strip width and reliable partner.

With best wishes of success and prosperity! Nomenclature of clad bands:

№ ID Code

as per Cladding State Material Name Designation Layer Name Standard

RF 1 ФМФз 42Н(FeNi)-copper-42Н(FeNi) gold with golden strip 2 КМКз 29НК(kovar)-copper-29НК(kovar) gold with golden strip 3 Фз 42Н(FeNi) with golden strip gold precision machinery 4 МСр copper with silver strip silver industry

5 БрСр bronze with silver strip silver

6 ЛСр brass with silver strip silver electronic 7 ФСр 42Н(FeNi) with silver strip silver engineering

8 СрФСр silver-42Н(FeNi)-silver silver 2

1

JSC “Voskhod” KRLZ JSC “Voskhod” KRLZ

9 НФНСр nickel-42Н(FeNi)-nickel silver 35 ФМФ 42Н(FeNi)-copper-42Н(FeNi) 42Н(FeNi) with silver strip 36 КМК 29НК(kovar)-copper-29НК(kovar) 29НК(kovar) 10 НзСр German silver with silver strip silver integrated 11 Бра bronze with aluminum strip aluminum microcircuits 37 ФЖФ 42Н(FeNi)-iron-42Н(FeNi) 42Н(FeNi) 12 БрХа chromium copper with aluminum strip aluminum 38 НхА Nichrome-aluminum aluminum electrovacuum appliances 13 Жа iron with aluminum strip aluminum 39 АМ, АПМ Copper-aluminum aluminum electronic 14 Ла brass with aluminum strip aluminum engineering 15 Фа 42Н(FeNi) with aluminum strip aluminum 16 На nickel with aluminum strip aluminum 1.2 Rolled stock from ferrous, nonferrous metals 17 НзА German silver with aluminum strip aluminum and high alloys

18 МЖМа copper-iron-copper aluminum Metal bands products with special properties are notable for the high surface with aluminum strip smoothness (Ra<0,1) and for the uniformity of mechanical properties. 19 НФНа nickel-42Н(FeNi)-nickel aluminum

with aluminum strip Basic nomenclature of rolled stock from ferrous, nonferrous metals and high alloys: 20 ФМФа 42Н(FeNi)-copper-42Н(FeNi) with aluminum aluminum strip ID Codes for bands (as per State № Material name Designation 21 АЖА aluminum-iron-aluminum aluminum automotive industry Standard RF)

1 МВ, М0б, М1, М1р, М2, М3 copper electronic engineering 22 АН aluminum-nickel aluminum electrovacuum appliances 2 Л63, Л68, Л90 brass machine building, 3 БрБ2, БрБНт1,9, БрКМц 3-1, instrument engineering, 23 БрЖБр bronze-iron-bronze bronze electronic bronze engineering БрОФ, БрОЦ 4-3, БрХ, К65, БрХ0,2 semifinished materials 24 КМ 29НК(kovar)-copper copper glass-to-metal bodies 4 НП1, НП2, НП2Э nickel electronic engineering 25 ЛЖЛ brass-iron-brass brass 5 29НК, 29НК-ВИ kovar precision machinery 6 36Н, 36НХТЮ invar radio electronics, integrated microcircuits, 26 МЖМ copper-iron-copper copper industry, electronic 7 42Н, 42НА-ВИ FeNi engineering geodesy 8 50Н, 79НМ permalloy 27 МЖН copper-iron-nickel copper,nickel chemical current 9 МНЦ15-20 German silver electronic engineering, sources МН19 Melchior consumer goods, jewelry, medi- 28 МЖА copper-iron-aluminum alum.,copper manufacture of cal instruments and tools structural elements 10 08КП, 08ПС, 08Ю low-carbon steel forming, 29 БрН bronze-nickel nickel chemical current packing sources 30 МФ copper-42Н(FeNi) copper

31 МФМ copper-42Н(FeNi)-copper copper 32 НЛН nickel-brass-nickel brass 33 НФН nickel-42Н(FeNi)-nickel nickel electronic 34 НЖН nickel-iron-nickel nickel engineering

3 4

JSC “Voskhod” KRLZ JSC “Voskhod” KRLZ

KEY SPECIFICATIONS FOR THE BANDS High alloyed For welding № Unit Parameters Parameter values wire from powerful meas. microalloyed semiconduc- 1 Mode of manufacture - cold rolling aluminum tor devices -8 2 Thickness mm from 0,06 to 2,0 alloy 200-400 44-66 5-25 3х10 and integrated 3 Width mm from 10 to 250 (АОЦПОМ) circuits 4 Thickness of cladding layer μm from 2 to 50* vacuum 5 Thickness of cladding strip μm from 2 to 50* melted 6 Width of cladding strip mm 1,8;3,0;4;4,5;5,0;6,0;7,0;9,0;12,0;16 copper For the output 7 Location of cladding strip - central, lateral Bimetallic core; of powerful 8 Band surface - smooth, Ra≤0,63 μm wire, cladding transistors -7 9 Accuracy of manufacturing the band - normal, enhanced copper-kovar 1000 from 500 1,0х10 10 State - solid, semi-solid, soft alloy 11 Edge type - sheared, mill edge 29НК (Fe-Ni- 12 Inner diameter of coils mm from 80 to 400 Co) 13 Coil weight kg from 10 to 200 Core material II ROUNDS - Bimetallic Fe- For the con- wire, 50%Ni tact spring of Tensile Resistivity, from 300 alloy, 600 20 magnetically Material, Diameter, As re- strength, Elon- Ω m, not FeNi-copper Cladding operated grade μm ceived MPa gation, % more Designation (50Н-МВ) material sealed switch condi- alloy - vacuum tion melted Aluminum copper alloy 18 solid 400-600 0,5-2,0 2,8х10-8 wire A5N

27 solid 300-400 1-6 3,5х10-8 For micro- Micron scale For welding soft 200-310 2-6 welding of aluminum 100-5000 solid - - - leads in inte- Micron scale wire soft grated circuits 30 solid 300-400 1-6 3,5х10-8 semiconduc- wire made and transis- soft 200-300 2-6 tor devices from Al-Si and integrated tors alloy -8 40 solid 300-400 2-6 3,5х10 circuits (АК0,9П) soft 200-300 4-6

50 solid 300-400 2-6 3,5х10-8

soft 200-300 4-6 -8 60;80;100; solid 220-300 2-12 3,5х10 160;200;25; soft 200-300 2-12 3,5х10-8 300;400;500

5

JSC “Voskhod” KRLZ JSC “Voskhod” KRLZ

Al-Ti - - 1,5 - Nomenclature of rounds from nonferrous metals and high alloys: Al-Ni - - - 1 6 ID Codes for Name of Type of rolled stock Al-Si-Cu 1,5 4 - - 7 № rounds (as per Designation material State Standard RF) Al-Si-Ti 1,5 - 1,5 - 1 wire ø 0,1-6,0 mm, electronic МВ, М0б, ММ copper bar ø 5,0-14,0 mm engineering 2 wire ø 0,1-6,0 mm, machine building, Л63, Л68, ЛС59 brass IV PSEUDO ALLOY STRIPS bar ø 5,0-14,0 mm instrument engineering 3 instrument engineering, БрКМц 3-1, БрОФ, wire ø 0,1-6,0 mm, bronze machine building, Pseudo alloys make it possible to manufacture items with unique consumer БрХ bar ø 5,0-14,0 mm semifinished materials properties, having a number of valuable characteristics: damping capacity, wear- 4 wire ø 0,03-6,0 mm, electronic НП1, НП2, НП2Э nickel ing capacity, self-lubricating capacity in friction (low friction coefficient), heat bar ø 5,0-14,0 mm engineering resistance, etc. These are manufactured by powder metallurgy methods from 5 wire ø 0,1-6,0 mm, 29НК, 29НК-ВИ kovar bar ø 5,0-14,0 mm pseudo alloys on the basis of copper and alloy additions of tungsten, molyb- denum and other metals for different items of electronic engineering, for constit- 6 wire ø 0,1-6,0 mm, 36Н, 36НХТЮ invar bar ø 5,0-14,0 mm radio electronics, uent body parts of semiconductor devices inclusive. 7 wire ø 0,1-6,0 mm, integrated microcircuits, 42Н, 42НА-ВИ FeNi bar ø 5,0-14,0 mm geodesy ID Codes (as per State Designation Name of material 8 wire ø 0,1-6,0 mm, Standard RF) 50Н, 79НМ permalloy bar ø 5,0-14,0 mm alloy of molybdenum with copper for manufacture of items with МД30, МД40, МД50 increased thermal conductance; ВД30 alloy of tungsten with copper for jointing with alumina and be- ryllium ceramics III MAGNETRON SPUTTER DEPOSITION TARGETS Technical features of the strips: Sputtering target materials for magnetron deposition — is an in-process me- thickness from 0,4 to 4 mm tallic material, consisting of one or several components in the form of squared or width not more than 100 mm round plates. They are utilized in powerful microwave appliances and field- linear thermal expansion coefficient not above 7,5x10-6 1/degree effect transistors. λ not less than 0,5λCu

Composition, % V LONG-TERM OUTLOOK FOR ROLLED BANDS Material Al - base material Si Cu Ti Ni In creating new materials with preprogrammed properties it is necessary to Al - - - - use extensively the achievements of modern science in its different fields: theo- Al-Si 0,5; 1; 1,5 - - - retical physics, thermodynamics of chemical reactions, composite materials, ad- Al-Cu - 4 - - vanced research methods, applied informatics, computer-aided design, modeling, etc. There has to be chosen a completely new approach to the development of a

8

JSC “Voskhod” KRLZ JSC “Voskhod” KRLZ new complex composition (new material) following the algorithm: “components Multilayered composite materials – bands and wire find widely application in of material – preprogrammed properties - new material”. chemical, electrical, machine building, food and other industries, as well as in With such approach the technology is a constituent element of the general jewelry manufacturing and in medicine. Bimetals and Multilayered clad materi- project, while selection criterion represents a set of parameters both at the stage als appeal to customers not only on account of their durability, but also due to of developing materials with preprogrammed properties with respect to physi- their high physical-chemical properties as a whole. Base of the most bimetal cal-mechanical characteristics, energetics, durability, operating conditions, utili- products is made from low-carbon steels (GOST steel grades 08кп, 08пс, 08ю, lzation, etc. and at the stage of setting up the industrial manufacturing process – 10кп, 11кп , etc.) clad (covered) by nonferrous metals and their alloys (alumi- low power inputs, wastelessness, ecological compatibility, etc. num, copper, brass, bronze, nickel, etc.). The cladding thickness is usually 3 - 50% of total thickness. Service properties of such bimetals change in the wide New multilayered materials with prepro- range. Monometallic rolled stock, grammed properties, used as a replacement used previously The BIB band (brass-iron-brass) is utilized in electronic engineering (output for monometals circuit boards, electrical connections, etc.) Brass rolled product Л63 Multilayered band The CIC band (copper-iron-copper) is used in precision machinery industry brass Л63-steel-brass Л63(LIL) (drawing gear), electrical industry (electric contacts, protective devices), elec- tronic engineering (output circuit boards, electrical contacts, etc.) Brass rolled product Л68 Multilayered band The NIN bands (nickel-iron-nickel) and CIN (copper-iron-nickel) are em- brass Л68-steel-brass Л68(LIL) ployed in electrical industry (current-carrying basis of electrodes, chemical cur- Brass rolled product Л90 Multilayered band rent source casings, etc.), in precision machinery industry. brass Л90-steel-brass Л90(LIL) Bimetallic copper-aluminum band is used in manufacture of conductive con- Copper rolled product М1 Multilayered band nection units, electrocontact tips, electric apparatus connection clamps, blade copper М1-steel-copper М1(CIC) type power isolators, connections of current-carrying wires, bimetallic contacts in electrolysis related productions, etc. Nickel rolled product НП2, НП0Э,НП1 Multilayered band Aluminum-copper bimetal combines high electrotechnical and strength prop- nickel НП2-steel-nickel НП2 (NIN) erties with minimal utilization of costly and scarce materials, the aluminum- Aluminum rolled product Bimetallic band copper products are able to operate at elevated temperatures and have high wear Copper rolled product aluminum-copper (RAC) resistance of contacting surfaces. Steel rolled product 08ПС Multilayered band The AIA bands (aluminum-iron-aluminum) and AN (aluminum-nickel) bands aluminum-steel-aluminum (AIA) are used in electrovacuum industry in electron valves as a replacement of nickel, they are also utilized in manufacturing thermocouple tubes, primus stove bodies Steel rolled product 08ПС, that of nickel НП2 Bimetallic band aluminum-nickel (AN) and other items. In automotive industry AIA bands are used in manufacturing clamping collars and couplings for hose connections and for the piping of cool- Copper, aluminum rolled product Bimetallic band ing systems, in fabricating fitting pieces, cylinder heads, heat filters, reflectors. copper-aluminum (CA) Copper-kovar wires are used in fabricating output leads for powerful transis- Rolled product 29НК Bimetallic wire tors. Kovar-copper (KC)

10 9

JSC “Voskhod” KRLZ JSC “Voskhod” KRLZ

СДИ-008-5 Red, VI SEMICONDUCTOR MATERIALS 650 1,75 1,85 5 3,5 10 GaAlAs / p-GaAs Red, 11 6.1 Chips for light-emitting diodes СДИ-009 GaAlAs (DH) / 650 1,75 1,9 10,0-15,0 8 10

LED chips for infrared and visible range of wavelengths are fabricated on the n-GaAlAs Red, basis of AlGaAs/GaAs and GaP/GaP epitaxial structures used for the manufac- СДИ-010 GaAlAs (DH) / p- 660 1,75 1,9 8 5 10 ture of LED chips and character indicators. GaAlAs CHIP CHARACTERISTICS FOR LEDS IN VISIBLE RANGE OF WAVELENGTHS *Notes: SH - heterostructure, DH - double heterostructure, n – upper side of n- type, p – upper side of p-type Vf, В IV, mcd Color, Fluorescence Chip type material / struc- wavelength, If, мА CHIP CHARACTERISTICS FOR LEDS IN INFRARED RANGE OF WAVELENGTHS ture * nm type max type min Material / Fluorescence Vf, В η, % Chip type I , мА structure * wavelength, nm f СДИ-001-6 Green, type max type min 565 2,1 2,4 6 3 20 GaP / p-GaP GaAlAs (DH) СДИ-004 860-920 1,5 1,7 7,0-10,0 5 100 СДИ-001-8 Green, /p-GaAlAs 565 2,1 2,4 8 4 20 GaP / p-GaP GaAlAs (DH) / СДИ-005-3 860 1,3 1,45 3 2 10 СДИ-001-10 Green, n-GaAs 565 2,1 2,4 10 5 20 GaP / p-GaP GaAlAs (DH) / СДИ-005-4 860 1,3 1,45 4 2,5 10 Red, n-GaAs СДИ-006-2 GaAlAs (SH) / n- 650 1,75 1,85 2 1,4 10 GaAlAs (DH) СДИ-014 670-870 1,5 1,7 4 2,8 20 GaAs /n-GaAlAs Red, *Notes: SH - heterostructure, DH - double heterostructure, n – upper side of n-type, p СДИ-006-3 GaAlAs (SH) / n- 650 1,75 1,85 3 2,1 10 – upper side of p-type GaAs Red, СДИ-007-3 6.2 Epitaxial structures GaAlAs for LEDs GaAlAs (DH) / p- 650 1,75 1,85 3 2,1 10

GaAs

Red, СДИ-007-4 GaAlAs (DH) / p- 650 1,75 1,85 4 2,8 10 Epitaxial heterostructures AlGaAs/GaAs

GaAs for LEDs are grown by method of liquid- phase epitaxy on GaAs substrates. They are Red, СДИ-007-5 GaAlAs (DH) / p- 650 1,75 1,85 5 3,5 10 used for fabrication of chips for the LEDs of

GaAs red and infrared range of wavelengths in СДИ-008-4 Redй, character indicators and optron keys. 650 1,75 1,85 4 2,8 10 GaAlAs / p-GaAs

JSC “Voskhod” KRLZ JSC “Voskhod” KRLZ

12 *Notes: SH - heterostructure, DH - double heterostructure, n – upper side of n- CHARACTERISTICS OF CRYSTAL WAFERS AlGaAs FOR LEDs type, p – upper side of p-type IN THE RED RANGE OF WAVELENGTHS 6.3 Substrates of monocrystalline GaAs Candlepower, Reverse voltage Response Material λ , ± 5nm mcd, at 20mА Vr min, В, time, ns structure / substrate * p Characteristics of GaAs substrates: Type at I = 10μА τ τ min type r r f - production method - method by Chokhralski AlGaAs(SH) / p- ЭСАГА 49 650-665 5 7 8 60 50 with liquid encapsulation of the melt; GaAs - dislocation density not less than 5·104cm-2; AlGaAs(DH) / n- ЭСАГА 125 650-665 9 12 8 40 30 16 18 -3 GaAs - carrier concentration 1·10 - 3·10 cm ; AlGaAs(DH) / n- - dopants Te, Zn; ЭСАГА 125S 650-665 2,5 4 8 40 30 GaAs - diameter 2;3 in.; AlGaAs(DH) / n- - crystallographic direction (100),(111); ЭСАГА 129 650-665 18 25 8 50 35 GaAlAs - thickness 350 – 650 µ; AlGaAs(DH) / p- - surface treatment – one- or two-sided polishing. ЭСАГА 131 650-665 12 15 8 40 30 GaAs AlGaAs(DH) / p- ЭСАГА 140 650-665 20 30 5 50 35 GaAlAs VII SOFT MAGNETIC AMORPHOUS AND NANOCRYSTAL- *Notes: SH - heterostructure, DH - double heterostructure, n – upper side of LINE ALLOY TAPES (AMAG) n-type, p – upper side of p-type

The tapes are fabricated by “spinning method” CHARACTERISTICS OF CRYSTAL WAFERS AlGaAs FOR LEDs IN THE INFRARED RANGE OF WAVELENGTHS wherein the melt is extruded from a crucible through calibrated orifice of a nozzle on to an outside surface Reverse of the fast-revolving metallic disk from which, fol- Material Candlepower, Response mcd, at 20mА voltage time, ns lowing the cooling at a rate of 1 million degrees Cel- Type structure / subs- λp, ± 5nm Vr min, В, sius per second, detaches continuous tape of a given trate * min type τ τ at Ir = 10μА r f width and thickness. ЭСАГА 20 AlGaAs(DH) / 800-860 0,8 1,4 8 60 50 The tapes are intended for utilization in the cores of p-GaAs AlGaAs(DH) / high frequency pulse transformers, chokes, magnetic ЭСАГА 131L 680-790 0,8 1,4 8 40 30 p-GaAs cartridges and other electromagnetic devices in place 3,0 4,0 8 40 30 of electric steels, permalloys and ferrites, in electro- AlGaAs(DH) / ЭСАГА 136 850-880 4,0 5,0 8 25 20 n-GaAlAs magnetic sensors of the anti-theft systems and built-in 2,0 3,0 8 25 20 heating elements of living spaces. AlGaAs(DH) / ЭСАГА 140 720-740 2,5 3,5 8 40 30 p-GaAlAs Flexible flat heating elements could be fabricated of a varied power and con- AlGaAs(DH) / 3,0 4,0 8 40 30 figuration based on specifications agreed. Wide choice of dimension types of ЭСАГА 140L 800-870 p-GaAlAs 4,0 5,0 8 40 30 resistance amorphous tapes made from iron-nickel alloy (GOST: АМАГ-225) AlGaAs(DH) / ЭСАГА 141 900-940 2,5 3,5 8 300 300 makes it possible to design heating elements based on parameters stipulated n-GaAlAs (voltage, current, specific power, surface temperature, area, etc.) The heating

13

14

JSC “Voskhod” KRLZ JSC “Voskhod” KRLZ elements made from thin amorphous tapes can be utilized as an additional Curie temperature, 0C 200 225 235 265 275 350 430 source of heat in living spaces and working area, or as a central heat source built into the floor or ceiling. Lower-power heating elements are effective in heating Density, g/cm³ 7,7 7,7 7,7 7,7 7,7 7,7 7,95 7,8 car seats and accumulators, mirrors, feedboxes and drinking troughs for livestock and poultry, for soil heating, protection against the formation of ice on entry Squareness ratio of the rectangular hysteresis loop, 0,20 0,15 0,1 0,05 0,05 0,05 0,04 0,03 steps and roof eaves of the buildings. Thanks to the chemical durability and in- not more than verting properties of the ПЭТ film utilized, the heating elements could be used Squareness ratio of the for heating corrosive liquids as well as for local application of warmth to a hu- rectangular hysteresis loop, 0,9 0,9 0,9 0,9 0,9 0,9 0,9 0,9 man body. not less than

Biased magnetostriction, 10-7 +1 -1 -1 +2 +1 +10 1 1

Specific resistivity, mОhm·m 1,2-1,5 1,2-1,5 1,2-1,5 1,2-1,5 1,2-1,5 1,2-1,5 1,2-1,5 1,2-1,5

Alloy Properties АМАГ АМАГ АМАГ АМАГ АМАГ АМАГ АМАГ 186 187 200 200С 203 225 324

ENGINEERING DATA FOR “АМАГ” (alloy ID as per State Standard RF) ALLOYS Induction B , T 0,90 0,99 1,2 1,16 1,5 1,20 1,55 10

АМАГ АМАГ АМАГ АМАГ АМАГ АМАГ АМАГ АМАГ Coercive force HC, Э 0,025 0,05 0,015 0,05 0,1 0,100 0,12 Alloy Properties 170 171 172 179 180 183 184 185 Permeance at 10 kHz 2200 1300 >30000 ≥60000 3000 2300 1700 Induction B , T 10 0,55 0,58 0,6 0,66 0,68 0,75 0,85 0,85 3 Max. permeance, MAX, 10 1000 1000 600 600 200 500 500 Coercive force HC, Э 0,005 0,005 0,005 0,005 0,005 0,02 0,25 0,03 Specific loss at induction Permeance at 1,5–2 - 1-1,5 1,0-1,5 5 4 5 100 000 80 000 70 000 50 000 35 000 10 000 850 3300 0,2 Тл, P0.2, W/kg at 10 kHz 10 kHz Specific loss at induction 45-55 - 30-40 30-40 - 120 140 3 0,2 Тл, P0.2 , W/kg at 100 kHz Max. permeance, MAX, 10 1000 1000 1000 800 1000 500 500 1000 Crystallization temperature, 0C 470 470 530 530 530 500 415 Specific loss at induction

0,2 Тл, P0.2, W/kg 0,5–1 0,5–1 0,5–1 1–1,5 1–1,5 1,5–2 - - 0 at 10 kHz Curie temperature, C 430 >Ткр 570 570 420 380 >Ткр Specific loss at induction Density, g/cm³ 7,7 7,8 7,3 7,3 7,3 7,4 7,6 0,2 Тл, P0.2, 20–25 20–25 20–25 20–30 20–30 30–40 - - W/kg at 100 kHz Squareness ratio of the Crystallization rectangular hysteresis loop, 0,03 0,02 0,1 0,15 0,1 0,1 0,1 530 525 520 510 505 525 470 470 temperature, 0C not more than

15 16

JSC “Voskhod” KRLZ JSC “Voskhod” KRLZ

Squareness ratio of the Linear voltage regulators 78хх, 78Mxx, 78Lxx, 79xx, 79Lxx, LM317, rectangular hysteresis loop, 0,9 0,9 0,9 0,9 0,85 0,9 0,9 LM337, LM3480, LT1083, TL431. not less than Pulsed DC-DC converters of the voltage MC34063, MA78S40, UC3843. Biased magnetostriction, 10-7 +0,5 0,5 +20 20 250 250 300 Sensing element of a linear sensor of temperature LM135. A set of transistor switches ULN2003. Specific resistivity, mОhm·m 1,2-1,5 1,2-1,5 1,2-1,5 1,2-1,5 1,2-1,5 1,2-1,5 1,2-1,5 Photodiode BPV10NF.  range of nominal thicknesses 18-25 μm with ± (2-3 μm) spread in a bundle; Standard CMOS series CD4000.  range of nominal width from 0,7 to 25,0 mm with ± (0,1- 0,2 mm) spread. Photovoltaic arrays for MOSFET solid state relay 17

MILLED TAPE FROM “АМАГ-200” ALLOY IХ INJECTION MULTIMODE PULSE LASERS

Manufacturing waste (tape) is milled into sepa- rate fragments. - used as a source of laser emission Scope of usage: - made on GaAs laser diode, have a built-in manufacture of magnetically soft powder of nano- pumping current generator and LPI-108 laser has crystalline structure. a bilt-in feedback photodiode Thickness of tapes - 15-25 μm - made in hermetic cylindrical metal case with emitting lead through a glass window Width of tapes - 1-25 mm Length of the tape fragment - 8 mm o * - in a cone with an angle at apex (40±3) ANALOGS TABLE Parameter designation, LPI-101 LPI-101-M LPI-120 LPI-120-2 LPI-121 measurement unit АМАГ 170 82КЗХСР, 71КНСР, VAC6025, MG2714 Emission wavelength, nm 875±75 АМАГ 172 84КХСР, VAC6070F Average power of laser 3* 4** 15* 4* 8** АМАГ 183 84КСР, 82КГМСР, VAC6030F, MG2705M emission pulse*, Wt, not less АМАГ 200 5БДСР than АМАГ 200С VITROPERM 500, 800 Finemet Nanoperm Laser emission pulse duration 70 70 50-150 60 60-200 АМАГ 203 2HCP, VAC7505, MG260553A (on leve0,5), ns, not less than АМАГ 225 15XHCP, VAC4040, MG2826MB Repetition frequency of laser 6.0±0.6 6.0±0.6 >3 6.0±0.6 12±0,1*** АМАГ 324 24KCP, 30KCP, VAC7600, MG2605CO emission pulses, Consumption current, mA, not 50 50 150 150 30...120 more than VIII CHIPS Supply voltage,V 20±0.1 20±0.5 24±0.1 20±0.1 18±0.1

Operating temperature -60...+60 -50...+50 -60...+60 -10...+40 -60...+60 Operational Amplifierss MA741, MA747, MA776, MC1456, LM108, range,oC LM101A, LM4250, AD513, TL083, OP- 07, OP-27, TCA0372. minimal operating time, hours 20 25 150 - 50 Comparator LM311. * - laser radiation a cone with apex angle (40±3)o

JSC “Voskhod” KRLZ JSC “Voskhod” KRLZ

2 ** - laser radiation in the fullangle Ee=0mW/cm *** - maximum permissible mode 50 kHz F=1MHz *100% probing Available custom design of photodiode chips

18 PD-1512 PIN photodiode Outline drawing Electrodes: LPI-101, LPI-120 Top side (Anode, Cathode): Al Back side: None Size: Chip size: 1.5 mm x 1.2 mm (58.9 mils x 47.1 mils) Chip thickness: 0.46 mm Active area: 1.2 mm x 0.9 mm (47.1 mils x 35.3 mils) Bonding pad (Anode, Cathode): 150 μm x 200 μm (5.9 mils x 7.9 mils) Х SILICON PHOTODIODE CHIPS Electrical characteristics (Ta=25˚C)

PD-1111 Parameter Symbol Condition Min Typ. Max. Unit Reverse dark ID VR=10V 5 nA PIN photodiode * 2 Electrodes: current Ee=0mW/cm Reverse V(BR)R IR=100uA 60 V Top side (Anode): Al 2 breakdown Ee=0mW/cm Back side (Cathode): Au voltage* Size: Reverse light IL VR=5V 11 μA 2 Chip size: 1.07 mm x 1.07 mm (42 mils x 42 mils) Current Ee=5mW/cm

Chip thickness: 0.46 mm (available 0.32 mm) Total Capacitance Ct VR=5V 5 pF 2 Active area: 0.87 mm x 0.87 mm (34 mils x 34 mils) Ee=0mW/cm Bonding pad (Anode): 140 μm x 140 μm (5.5 mils x 5.5 mils) F=1MHz Electrical characteristics (Ta=25˚C) *100% probing Parameter Symbol Condition Min Typ. Max. Unit Available custom design of photodiode chips * Reverse dark current ID VR=10V 5 nA 2 Ee=0mW/cm ХI RECEIVING AND AMPLIFYING RADIO TUBE Reverse breakdown V(BR)R IR=100uA 60 V * 2 12AX7VKA voltage Ee=0mW/cm

Reverse light Current IL VR=5V 8 μA 2 Miniature double triode with separate indirectly heated cathodes with spiral Ee=5mW/cm heater is intended for being employes as phase inverter or as double amplifier Total Capacitance Ct VR=5V 3 pF

JSC “Voskhod” KRLZ JSC “Voskhod” KRLZ with resistive feedback. It is used to increase the voltage in the low frequency radio devices. The tube have following additional advantages: shock resistance, vibration re- sistance, reliable perfomance at high altitudes, high temperature re- Electrode-to-lead connection diagram sistance,stability of electrical values, extended heater life. Current–voltage characteristic (I-V chart)

Pin number

description 1 plate 2 2 grid 2 3 cathode 2 4, 5 and 9 heater 6 plate 1 7 grid 1 8 cathode 1

ХII THERMAL HEAD T1001B-2, TA4032A, TД4032A, TВ4032A, TA4840A, TA5460A. 21

Suitable for the application alphanumeric and bar information on heat- sensitive strip of stationary and portable cash registers, multifunctional shopping Pin arrangement and banking terminals, electronic scales, combined with a cash machine, car tax- imeter with printer, barcode device-code information as a sequence of points on Mass not more than 15 g. heat-sensitive paper.

Nomenclature of mass - produced products:

JSC “Voskhod” KRLZ JSC “Voskhod” KRLZ

Name of the parameter, unit T1001B-2 TA4032A TД4032A Width of the print, mm 40±0,5 40±0,5 40±0,5 III MAGNETRON SPUTTER DEPOSITION TARGETS...... 7 Resolution, dot / mm (DPI) 3,2 (80) 3,2 (80) 3,2 (80) IV PSEUDO ALLOY STRIPS...... 8

Name of the parameter, unit TA4840A TA5460A TB4032A V LONG-TERM OUTLOOK FOR ROLLED BANDS...... 8 Width of the print, mm 40±0,2 54±0,5 40±0,5

Resolution, dot / mm (DPI) 4,0(100) 6,0(150) 3,2(80) VI SEMICONDUCTOR MATERIALS...... 11

Being the development of the thermal head TD4880A. 6.1 Chips for light-emitting diodes...... 11 6.2 Epitaxial structures GaAlAs for LEDs...... 12 Parameter, unit TD4880A 6.3 Substrates of monocrystalline GaAs...... 14 Analogue KYT-48-8-pal1 Width of the print, mm 48 ± 0,2 Resolution, dot / mm 8 VII SOFT MAGNETIC AMORPHOUS AND NANOCRYSTALLINE Operating temperature range -30 + 40 ALLOY TAPES (AMAG)...... 14

VIII CHIPS...... 17

IХ INJECTION MULTIMODE PULSE LASERS...... 18

Х SILICON PHOTODIODE CHIPS...... 19 ХI RECEIVING AND AMPLIFYING RADIO TUBE 12AX7VKA...... 20

ХII THERMAL HEAD T1001В-2, ТА4032А, ТД4032А, ТА4840А, CONTENTS ТА5460А...... 22 22 CONTACT US I FLAT SECTION...... 2 248009, Russia, Kaluga, Grabtsevskoe shosse, 43. www.voshod-krlz.ru e-mail: [email protected] 1.1 Multilayered clad metal bands...... 2 1.2 Rolled stock from ferrous, nonferrous metals Fax: 7 (4842) 73-58-70, 73-58-63, 55-12-50 and high alloys...... 4 General Director - Shmakov Nikolay Viktorovich

tel.: 7 (4842) 56-29-33 II ROUNDS…...... 5

JSC “Voskhod” KRLZ JSC “Voskhod” KRLZ

Chief Executive Officer - Yarantsev Nikolay Vladimirovich tel.: 7 (4842) 56-29-33

«Rolling Productions Group» - Yambulatov Rashid Ravilovich tel.: 7 (4842) 74-42-41, 74-42-65, 8-910-916-05-50, 8-910-914-16-15

«Pseudo Alloys Group» - Prasitskiy Vasiliy Vitalyevich tel.: 7 (4842) 53-80-82

«Semiconductor Materials Group» - Paramonov Viktor Vasilyevich tel.: 7 (4842) 76-66-31

«Amorphous Tapes Group» - Maryakhin Andrey Vladimirovich tel.: 7-910-709-93-08

«Silicon Photodiode Group» - Libkind Ilya Vladimirovich tel.: 7 (4842) 54-45-23

«Injection Multimode Pulse Laserz Group» - Yakovenko Oksana Nikolaevna tel.: 7 (4842) 76-66-07

Deputy Technical Director - Morozov Vasiliy Alekseyvich tel.: 7 (4842) 73-56-01

Marketing Department - Tselueva Galina Aleksandrovna tel.: 7 (4842) 54-79-82, 76-68-68