Intercalation of Si between MoS2 layers Rik van Bremen‡1, Qirong Yao‡1, Soumya Banerjee2, Deniz Cakir2, Nuri Oncel2 and Harold J. W. Zandvliet*1 Full Research Paper Open Access Address: Beilstein J. Nanotechnol. 2017, 8, 1952–1960. 1Physics of Interfaces and Nanomaterials, MESA+ Institute for doi:10.3762/bjnano.8.196 Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, Netherlands and 2Department of Physics and Received: 29 March 2017 Astrophysics, University of North Dakota, Grand Forks, ND 58202, Accepted: 21 August 2017 USA Published: 19 September 2017 Email: This article is part of the Thematic Series "Silicene, germanene and other Harold J. W. Zandvliet* -
[email protected] group IV 2D materials". * Corresponding author ‡ Equal contributors Guest Editor: P. Vogt Keywords: © 2017 van Bremen et al.; licensee Beilstein-Institut. intercalation; molybdenum disulfide; scanning tunneling microscopy; License and terms: see end of document. silicene; two-dimensional materials Abstract We report a combined experimental and theoretical study of the growth of sub-monolayer amounts of silicon (Si) on molybdenum disulfide (MoS2). At room temperature and low deposition rates we have found compelling evidence that the deposited Si atoms intercalate between the MoS2 layers. Our evidence relies on several experimental observations: (1) Upon the deposition of Si on pristine MoS2 the morphology of the surface transforms from a smooth surface to a hill-and-valley surface. The lattice constant of the hill-and-valley structure amounts to 3.16 Å, which is exactly the lattice constant of pristine MoS2. (2) The transitions from hills to valleys are not abrupt, as one would expect for epitaxial islands growing on-top of a substrate, but very gradual.