GAN063-650WSA.Pdf

GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET 20 March 2020 Product data sheet

1. General description The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

2. Features and benefits • Ultra-low reverse recovery charge • Simple gate drive (0 V to +10 V or 12 V) • Robust gate oxide (±20 V capability) • High gate threshold voltage (+4 V) for very good gate bounce immunity • Very low source-drain voltage in reverse conduction mode • Transient over-voltage capability (800 V)

3. Applications • Hard and soft switching converters for industrial and datacom power • Bridgeless totempole PFC • PV and UPS inverters • Servo motor drives

4. Quick reference data

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage -55 °C ≤ Tj ≤ 175 °C - - 650 V

ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - - 34.5 A

Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 143 W

Tj junction temperature -55 - 175 °C Static characteristics

RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C - 50 60 mΩ resistance Dynamic characteristics

QGD gate-drain charge ID = 25 A; VDS = 400 V; VGS = 10 V; - 4 - nC Tj = 25 °C QG(tot) total gate charge - 15 - nC Source-drain diode

Qr recovered charge IS = 25 A; dIS/dt = -1000 A/µs; - 125 - nC VGS = 0 V; VDS = 400 V; Fig. 14 Nexperia GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET

5. Pinning information

Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 S source 3 D drain mb S mounting base; connected to source G

S 1 2 3 TO-247 (SOT429) aaa-028116

6. Ordering information

Table 3. Ordering information Type number Package Name Description Version GAN063-650WSA TO-247 plastic, single-ended through-hole package; 3 leads; 5.45 mm SOT429 pitch; 20.45 mm x 15.6 mm x 4.95 mm body

7. Marking

Table 4. Marking codes Type number Marking code GAN063-650WSA GAN063-650WSA

8. Limiting values

Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage -55 °C ≤ Tj ≤ 175 °C - 650 V

VTDS transient drain to source pulsed; tp = 1 µs; δfactor = 0.01 - 800 V voltage

VGS gate-source voltage -20 20 V

Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 143 W

ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - 34.5 A

VGS = 10 V; Tmb = 100 °C; Fig. 2 - 24.4 A

IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 150 A

Tstg storage temperature -55 175 °C

Tj junction temperature -55 175 °C

Tsld(M) peak soldering - 260 °C temperature Source-drain diode

IS source current Tmb = 25 °C; VGS = 0 V - 34.5 A

Product data sheet 20 March 2020 2 / 11 Nexperia GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET

Symbol Parameter Conditions Min Max Unit

ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 150 A

03aa16 aaa-028050 120 100 ID (A) D = 10% Pder (%) 80

D = 20% 80 60

D = 50%

40 40 DC 20

0 0 0 50 100 150 200 25 50 75 100 125 150 175 200 Tmb (°C) Tmb (°C)

VGS ≥ 10 V; Pulse width ≤ 10 µs Fig. 2. Drain current as a function of mounting base Fig. 1. Normalized total power dissipation as a temperature function of mounting base temperature

aaa-028052 103 ID (A)

102 tp = 1 µs 100 µs 10 µs

10 1 ms

1 10 ms

10-1

10-2 10-1 1 10 102 103 VDS (V)

Tmb = 25 °C; IDM is a single pulse Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

9. Thermal characteristics

Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance from Fig. 4 - - 1.05 K/W junction to mounting base

Rth(j-a) thermal resistance from vertical in free air - - 40 K/W junction to ambient

Product data sheet 20 March 2020 3 / 11 Nexperia GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET

aaa-028054 10 Zth(j-mb) (K/W)

1 δ = 0.5

0.2

10-1 0.1

tp P δ = single shot T 10-2

t tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s)

Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

10. Characteristics

Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics

VGS(th) gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C 3.4 3.9 4.5 V voltage ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 9 2.2 - - V

ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 9 - - 5.2 V

IDSS drain leakage current VDS = 650 V; VGS = 0 V; Tj = 25 °C - 2 25 µA

VDS = 650 V; VGS = 0 V; Tj = 175 °C - 25 - µA

IGSS gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA

VGS = 20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA

RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C - 50 60 mΩ resistance VGS = 10 V; ID = 25 A; Tj = 175 °C; - 120 - mΩ Fig. 10

RG gate resistance f = 1 MHz - 2.3 - Ω Dynamic characteristics

QG(tot) total gate charge ID = 25 A; VDS = 400 V; VGS = 10 V; - 15 - nC Tj = 25 °C QGS gate-source charge - 6 - nC

QGD gate-drain charge - 4 - nC

Ciss input capacitance VDS = 400 V; VGS = 0 V; f = 1 MHz; - 1000 - pF Tj = 25 °C; Fig. 11 Coss output capacitance - 130 - pF

Crss reverse transfer - 8 - pF capacitance

Co(er) effective output 0 V ≤ VDS ≤ 400 V; VGS = 0 V; - 190 - pF capacitance, energy Tj = 25 °C; Fig. 12 related

Co(tr) effective output 0 V ≤ VDS ≤ 400 V; VGS = 0 V; - 310 - pF capacitance, time Tj = 25 °C related

Product data sheet 20 March 2020 4 / 11 Nexperia GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET

Symbol Parameter Conditions Min Typ Max Unit

td(on) turn-on delay time VDS = 400 V; RL = 16 Ω; VGS = 12 V; - 57 - ns RG(ext) = 40 Ω tr rise time - 10 - ns

td(off) turn-off delay time - 88 - ns

tf fall time - 11 - ns

Qoss output charge VGS = 0 V; VDS = 400 V - 125 - nC Source-drain diode

VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 13 - 1.9 - V

IS = 12.5 A; VGS = 0 V; Tj = 25 °C - 1.35 - V

trr reverse recovery time IS = 25 A; dIS/dt = -1000 A/µs; - 54 - ns VGS = 0 V; VDS = 400 V; Fig. 14 Qr recovered charge - 125 - nC

aaa-028060 aaa-028061 200 100 ID ID (A) VGS = 10 V (A) VGS = 10 V 80 150 7.5 V 8 V 7 V 60

100 7 V

40 6 V

50 6 V 20

5 V 5 V 0 0 0 2 4 6 8 10 0 2 4 6 8 10 VDS (V) VDS (V)

Tj = 25 °C Tj = 175 °C Fig. 5. Output characteristics; drain current as a Fig. 6. Output characteristics; drain current as a function of drain-source voltage; typical values function of drain-source voltage; typical values

aaa-028055 aaa-029173 80 160 ID QOSS (A) (nC)

60 120

40 80

20 40

175°C Tj = 25°C

0 0 0 2 4 6 8 10 0 100 200 300 400 500 600 700 VGS (V) VDS (V) V = 10 V DS Fig. 8. Typical QOSS Fig. 7. Transfer characteristics; drain current as a function of gate-source voltage; typical values

Product data sheet 20 March 2020 5 / 11 Nexperia GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET

aaa-029174 aaa-027810 6 3 VGS(th) a (V) 5 2.5 Max

4 Typ 2

3 1.5 Min

2 1

1 0.5

0 0 -60 -30 0 30 60 90 120 150 180 -60 -30 0 30 60 90 120 150 180 Tj (°C) Tj (°C)

ID = 1 mA ; VDS = VGS Fig. 9. Gate-source threshold voltage as a function of junction temperature Fig. 10. Normalized drain-source on-state resistance factor as a function of junction temperature

aaa-028058 aaa-028063 104 30 C EOSS (pF) (µJ) 25 Ciss 103 20

102 15 Coss

10 10 5 Crss

1 0 1 10 102 103 0 100 200 300 400 500 600 VDS (V) VDS (V) V = 0 V; f = 1 MHz GS Fig. 12. Typical COSS Stored Energy Fig. 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values

Product data sheet 20 March 2020 6 / 11 Nexperia GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET

aaa-028059 150 IS Tj = 25°C (A) 125 50°C 75°C

100 100°C 125°C

75 150°C 175°C 50

0 0 2 4 6 8 10 VSD (V)

VGS = 0 V Fig. 13. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values I, V

dlS/dt

IS trr

t 0.25 IRM Qr IRM A VRRM DUT -

VSD +

aaa-029277

Fig. 14. Diode reverse recovery test circuit and waveform

11. Application information To achieve maximum efficiency and stability when switching high currents, a switching node RC snubber (Rsn, Csn) is recommended. For IL < 14 A, a switching-node snubber is not required.

CSN is taken from the graph.

RSN should be selected to achieve a time constant of 1 ns; e.g. if CSN = 100 pF, RSN = 1 ns / 100 pF = 10 Ω.

Product data sheet 20 March 2020 7 / 11 Nexperia GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET

aaa-029603 DC bus V 180 BUS Csn (pF) 160 driver Q2 RCDCL RG (place as close as 140 possible to drain pin)

120 VS Vo

100 driver Q1 RG RSN 80 RCSN CSN 60

40 aaa-029331

20 Fig. 16. DC-link snubber circuit

0 0 5 10 15 20 25 30 35 40 IL (A)

RG = 30 Ω; τ = RSN × CSN = 1 ns Fig. 15. Snubber capacitance as function of load current

Note: A DC-link snubber is recommended in all cases. Optimal is 20 nF in series with 4 Ω, most easily achieved with parallel combination 10 nF and 8 Ω. This snubber lowers the Q factor of any resonance in the bus. That resonance will act as a load on the high gain amplifier that is the GaN FET and can lead to instability. For very high current, an RC snubber is recommended for the switching node. This will increase switching loss, so this is only recommended at high power levels where the losses are a very small percentage of the total power.

Product data sheet 20 March 2020 8 / 11 Nexperia GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET

12. Package outline

Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247 SOT429

E A E1

E2/2 A2 D2

Q S E 2 ØP

D D 1 ØP1

1 2 3

L1 A1

b2 (2x)

L b4

e b c (2x) (3x)

0 20 mm scale

øP øP1 Q S

3.658 7.315 5.740 6.299

3.556 7.061 5.486 6.045

Dimensions (mm are the original dimensions)

Unit A A1 A2 b b2 b4 c D D1 D2 E E1 E2 E2/2 e L L1

max 5.156 2.507 2.108 1.397 2.387 3.429 0.889 21.082 17.441 1.321 16.027 14.148 5.225 2.613 20.320 4.445 mm nom 5.436 min 4.902 2.253 1.854 0.991 1.651 2.591 0.381 20.828 17.187 1.067 15.773 13.894 4.318 2.159 20.066 3.937

sot429_po

Outline References European Issue date version IEC JEDEC JEITA projection 19-08-19 SOT429 TO-247 19-08-20

Fig. 17. Package outline TO-247 (SOT429)

Product data sheet 20 March 2020 9 / 11 Nexperia GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET

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Product data sheet 20 March 2020 10 / 11 Nexperia GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET

Contents

1. General description...... 1 2. Features and benefits...... 1 3. Applications...... 1 4. Quick reference data...... 1 5. Pinning information...... 2 6. Ordering information...... 2 7. Marking...... 2 8. Limiting values...... 2 9. Thermal characteristics...... 3 10. Characteristics...... 4 11. Application information...... 7 12. Package outline...... 9 13. Legal information...... 10

© Nexperia B.V. 2020. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: [email protected] Date of release: 20 March 2020

Product data sheet 20 March 2020 11 / 11