GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET 20 March 2020 Product data sheet 1. General description The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance. 2. Features and benefits • Ultra-low reverse recovery charge • Simple gate drive (0 V to +10 V or 12 V) • Robust gate oxide (±20 V capability) • High gate threshold voltage (+4 V) for very good gate bounce immunity • Very low source-drain voltage in reverse conduction mode • Transient over-voltage capability (800 V) 3. Applications • Hard and soft switching converters for industrial and datacom power • Bridgeless totempole PFC • PV and UPS inverters • Servo motor drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage -55 °C ≤ Tj ≤ 175 °C - - 650 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - - 34.5 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 143 W Tj junction temperature -55 - 175 °C Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C - 50 60 mΩ resistance Dynamic characteristics QGD gate-drain charge ID = 25 A; VDS = 400 V; VGS = 10 V; - 4 - nC Tj = 25 °C QG(tot) total gate charge - 15 - nC Source-drain diode Qr recovered charge IS = 25 A; dIS/dt = -1000 A/µs; - 125 - nC VGS = 0 V; VDS = 400 V; Fig. 14 Nexperia GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 S source 3 D drain mb S mounting base; connected to source G S 1 2 3 TO-247 (SOT429) aaa-028116 6. Ordering information Table 3. Ordering information Type number Package Name Description Version GAN063-650WSA TO-247 plastic, single-ended through-hole package; 3 leads; 5.45 mm SOT429 pitch; 20.45 mm x 15.6 mm x 4.95 mm body 7. Marking Table 4. Marking codes Type number Marking code GAN063-650WSA GAN063-650WSA 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage -55 °C ≤ Tj ≤ 175 °C - 650 V VTDS transient drain to source pulsed; tp = 1 µs; δfactor = 0.01 - 800 V voltage VGS gate-source voltage -20 20 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 143 W ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - 34.5 A VGS = 10 V; Tmb = 100 °C; Fig. 2 - 24.4 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 150 A Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering - 260 °C temperature Source-drain diode IS source current Tmb = 25 °C; VGS = 0 V - 34.5 A GAN063-650WSA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. All rights reserved Product data sheet 20 March 2020 2 / 11 Nexperia GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET Symbol Parameter Conditions Min Max Unit ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 150 A 03aa16 aaa-028050 120 100 ID (A) D = 10% Pder (%) 80 D = 20% 80 60 D = 50% 40 40 DC 20 0 0 0 50 100 150 200 25 50 75 100 125 150 175 200 Tmb (°C) Tmb (°C) VGS ≥ 10 V; Pulse width ≤ 10 µs Fig. 2. Drain current as a function of mounting base Fig. 1. Normalized total power dissipation as a temperature function of mounting base temperature aaa-028052 103 ID (A) 102 tp = 1 µs 100 µs 10 µs 10 1 ms 1 10 ms 10-1 10-2 10-1 1 10 102 103 VDS (V) Tmb = 25 °C; IDM is a single pulse Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from Fig. 4 - - 1.05 K/W junction to mounting base Rth(j-a) thermal resistance from vertical in free air - - 40 K/W junction to ambient GAN063-650WSA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. All rights reserved Product data sheet 20 March 2020 3 / 11 Nexperia GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET aaa-028054 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 10-1 0.1 tp P δ = single shot T 10-2 t tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics VGS(th) gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C 3.4 3.9 4.5 V voltage ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 9 2.2 - - V ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 9 - - 5.2 V IDSS drain leakage current VDS = 650 V; VGS = 0 V; Tj = 25 °C - 2 25 µA VDS = 650 V; VGS = 0 V; Tj = 175 °C - 25 - µA IGSS gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C - 50 60 mΩ resistance VGS = 10 V; ID = 25 A; Tj = 175 °C; - 120 - mΩ Fig. 10 RG gate resistance f = 1 MHz - 2.3 - Ω Dynamic characteristics QG(tot) total gate charge ID = 25 A; VDS = 400 V; VGS = 10 V; - 15 - nC Tj = 25 °C QGS gate-source charge - 6 - nC QGD gate-drain charge - 4 - nC Ciss input capacitance VDS = 400 V; VGS = 0 V; f = 1 MHz; - 1000 - pF Tj = 25 °C; Fig. 11 Coss output capacitance - 130 - pF Crss reverse transfer - 8 - pF capacitance Co(er) effective output 0 V ≤ VDS ≤ 400 V; VGS = 0 V; - 190 - pF capacitance, energy Tj = 25 °C; Fig. 12 related Co(tr) effective output 0 V ≤ VDS ≤ 400 V; VGS = 0 V; - 310 - pF capacitance, time Tj = 25 °C related GAN063-650WSA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. All rights reserved Product data sheet 20 March 2020 4 / 11 Nexperia GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET Symbol Parameter Conditions Min Typ Max Unit td(on) turn-on delay time VDS = 400 V; RL = 16 Ω; VGS = 12 V; - 57 - ns RG(ext) = 40 Ω tr rise time - 10 - ns td(off) turn-off delay time - 88 - ns tf fall time - 11 - ns Qoss output charge VGS = 0 V; VDS = 400 V - 125 - nC Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 13 - 1.9 - V IS = 12.5 A; VGS = 0 V; Tj = 25 °C - 1.35 - V trr reverse recovery time IS = 25 A; dIS/dt = -1000 A/µs; - 54 - ns VGS = 0 V; VDS = 400 V; Fig. 14 Qr recovered charge - 125 - nC aaa-028060 aaa-028061 200 100 ID ID (A) VGS = 10 V (A) VGS = 10 V 80 150 7.5 V 8 V 7 V 60 100 7 V 40 6 V 50 6 V 20 5 V 5 V 0 0 0 2 4 6 8 10 0 2 4 6 8 10 VDS (V) VDS (V) Tj = 25 °C Tj = 175 °C Fig. 5. Output characteristics; drain current as a Fig. 6. Output characteristics; drain current as a function of drain-source voltage; typical values function of drain-source voltage; typical values aaa-028055 aaa-029173 80 160 ID QOSS (A) (nC) 60 120 40 80 20 40 175°C Tj = 25°C 0 0 0 2 4 6 8 10 0 100 200 300 400 500 600 700 VGS (V) VDS (V) V = 10 V DS Fig. 8. Typical QOSS Fig. 7. Transfer characteristics; drain current as a function of gate-source voltage; typical values GAN063-650WSA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. All rights reserved Product data sheet 20 March 2020 5 / 11 Nexperia GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET aaa-029174 aaa-027810 6 3 VGS(th) a (V) 5 2.5 Max 4 Typ 2 3 1.5 Min 2 1 1 0.5 0 0 -60 -30 0 30 60 90 120 150 180 -60 -30 0 30 60 90 120 150 180 Tj (°C) Tj (°C) ID = 1 mA ; VDS = VGS Fig. 9. Gate-source threshold voltage as a function of junction temperature Fig. 10. Normalized drain-source on-state resistance factor as a function of junction temperature aaa-028058 aaa-028063 104 30 C EOSS (pF) (µJ) 25 Ciss 103 20 102 15 Coss 10 10 5 Crss 1 0 1 10 102 103 0 100 200 300 400 500 600 VDS (V) VDS (V) V = 0 V; f = 1 MHz GS Fig. 12. Typical COSS Stored Energy Fig. 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values GAN063-650WSA All information provided in this document is subject to legal disclaimers.