Synthesis of IV-VI Transition Metal Carbide and Nitride Nanoparticles
Total Page:16
File Type:pdf, Size:1020Kb
Load more
Recommended publications
-
Synthesis and Characterisation of Carbide Derived Carbons
Synthesis and Characterisation of Carbide Derived Carbons Sigita Urbonaite Department of Physical, Inorganic and Structural Chemistry Stockholm University 2008 Doctoral Thesis 2008 Department of Physical, Inorganic and Structural Chemistry Stockholm University Cover: Some artefacts found during TEM investigation of CDCs. Faculty opponent: Prof. Rik Brydson Department of Nanoscale Materials Characterisation Institute for Materials Research University of Leeds, UK Evaluation committee: Prof. Bertil Sundqvist, Nanofysik och material, UmU Prof. Margareta Sundberg, Strukturkemi, SU Prof. Kristina Edström, Strukturkemi, UU Docent Lioubov Belova, Teknisk materialfysik, KTH © Sigita Urbonaite, Stockholm 2008 ISBN 978-91-7155-589-2 pp. 1-82. Printed in Sweden by US-AB, Stockholm 2008 Distributor: FOOS/Structurkemi ii ABSTRACT Carbide derived carbons (CDCs) have been synthesised through chlorina- tion of VC, TiC, WC, TaC, NbC, HfC and ZrC at different temperatures. The aim of the investigation was to systematically study changes of struc- tural and adsorption properties depending on the synthesis conditions. CDCs were characterised using nitrogen and carbon dioxide adsorption, Raman spectroscopy, scanning electron microscopy, transmission electron micros- copy, and electron energy loss spectroscopy. The studies revealed the CDCs structures to range from amorphous to ordered, from microporous to mesoporous. It was found that structural ordering and porosity can be modi- fied by: i) synthesis temperature, ii) precursor, iii) density and volume of precursor, iv) catalysts, v) incorporation of nitrogen in to carbide structure, and CDCs can be tuned up to the demanded quality. They also exhibited a high potential for methane storage. iii iv LIST OF PUBLICATIONS Paper I. Porosity development along the synthesis of carbons from metal carbides S. -
Thermodynamic Routes to Novel Metastable Nitrogen-Rich Nitrides
Article pubs.acs.org/cm Thermodynamic Routes to Novel Metastable Nitrogen-Rich Nitrides Wenhao Sun,†,‡ Aaron Holder,§,⊥ Bernardo Orvañanos,‡ Elisabetta Arca,§ Andriy Zakutayev,§ Stephan Lany,§ and Gerbrand Ceder*,†,‡,∥ † Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States ‡ Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States § National Renewable Energy Laboratory, Golden, Colorado 80401, United States ∥ Department of Materials Science and Engineering, Univeristy of California, Berkeley, California 94720, United States ⊥ Department of Chemical and Biological Engineering, Univeristy of Colorado, Boulder, Colorado 80309, United States *S Supporting Information ABSTRACT: Compared to oxides, the nitrides are relatively unexplored, making them a promising chemical space for novel materials discovery. Of particular interest are nitrogen-rich nitrides, which often possess useful semiconducting properties for electronic and optoelectronic applications. However, such nitrogen-rich compounds are generally metastable, and the lack of a guiding theory for their synthesis has limited their exploration. Here, we review the remarkable metastability of observed nitrides, and examine the thermodynamics of how reactive nitrogen precursors can stabilize metastable nitrogen-rich compositions during materials synthesis. We map these thermodynamic strategies onto a predictive computational search, training a data-mined -
1 Understanding Continuous Lithium-Mediated Electrochemical Nitrogen Reduction Nikifar Lazouski,1 Zachary J Schiffer,1 Kindle Wi
© 2019 This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ doi: 10.1016/j.joule.2019.02.003 Understanding Continuous Lithium-Mediated Electrochemical Nitrogen Reduction Nikifar Lazouski,1 Zachary J Schiffer,1 Kindle Williams,1 and Karthish Manthiram1* 1Department of Chemical Engineering; Massachusetts Institute of Technology; Cambridge, MA 02139, USA *Corresponding Author: [email protected] 1 © 2019 This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ doi: 10.1016/j.joule.2019.02.003 Summary Ammonia is a large-scale commodity chemical that is crucial for producing nitrogen- containing fertilizers. Electrochemical methods have been proposed as renewable and distributed alternatives to the incumbent Haber-Bosch process, which utilizes fossils for ammonia production. Herein, we report a mechanistic study of lithium-mediated electrochemical nitrogen reduction to ammonia in a non-aqueous system. The rate laws of the main reactions in the system were determined. At high current densities, nitrogen transport limitations begin to affect the nitrogen reduction process. Based on these observations, we developed a coupled kinetic-transport model of the process, which we used to optimize operating conditions for ammonia production. The highest Faradaic efficiency observed was 18.5 ± 2.9%, while the highest production rate obtained was (7.9 ± 1.6) × 10-9 mol cm-2 s-1. Our understanding of the reaction network and the influence of transport provides foundational knowledge for future improvements in continuous lithium- mediated ammonia synthesis. -
Ultra-Thin Niobium Nitride Films for Hot Electron Bolometer and Thz Applications
THESIS FOR THE DEGREE OF LICENTIATE OF ENGINEERING Ultra-thin Niobium Nitride Films for Hot Electron Bolometer and THz Applications SASCHA KRAUSE Group for Advanced Receiver Development Department of Earth and Space Science CHALMERS UNIVERSITY OF TECHNOLOGY Gothenburg, Sweden 2016 i Ultra-thin Niobium Nitride Films for Hot Electron Bolometer and THz Applications SASCHA KRAUSE © SASCHA KRAUSE, 2016. Thesis for the degree of Licentiate of Engineering Group for Advanced Receiver Development Department of Earth and Space Science Chalmers University of Technology SE-412 96 Gothenburg Sweden Telephone + 46 (0)31-772 1000 Cover: Upper left corner: The Atacama Path Finder Experiment representing the exploration of space in the submillimeter and THz frequency range, upper right corner: HRTEM image of ultra-thin NbN film that is grown onto a GaN buffer-layer in an epitaxial manner, lower left corner: SEM image of the employed HEB used for measuring the phonon escape time, lower right corner: Resistance versus temperature behavior of the investigated ultra-thin NbN films which were grown onto different buffer-layers and substrates. [Printed by Chalmers Repro Service] Gothenburg, 2016 ii Ultra-thin Niobium Nitride Films for Hot Electron Bolometer and THz Applications SASCHA KRAUSE Group for Advanced Receiver Development Department of Earth and Space Science Chalmers University of Technology Gothenburg, Sweden 2016 Abstract The part of the electromagnetic spectrum between microwaves and infrared, also known as the terahertz band, is of particular interest for radio astronomy. The radiation intensity of the cold universe peaks at this frequency band, thus defining the demand on sensitive low-noise instruments in this particular frequency range. -
Characterization of Actinide Physics Specimens for the US/UK Joint
Kgmg^tK)HiitV HMWU-HUBM- DISCLAIMER That report was preputd as u accoaat of mk spoasored by an ageacy of the Uaiied Stela Cuiiiaawal Neither the La-ted State* Cuiuaatat act aay ai;cacy thtttof. aor aay of their aaptoyees. nokei may wwtaaty. esarcai or •npfied, or anatt aay le^ hal^ or nspoasi- batty lor the accaracy. ooatpfeieaeB, or asefalaeai of aay ialbrBMrtW, •ppertta*. prorJoct, or L or repteaeab that its aae woakf aot iafnagc privately owaad rjgHs. Rcfcr- ; here* to *ay specific conaacrcial prodact. proem, or service by trade i ORNL-5986 r, or otherwise does aot aeccanriiy constitate or booty it* i Dist. Category , or favoriag by the (Anted State* GovcmnKat or aay ageacy thereof. The view of aathors ezprcsaed harm do aot aeceMariy state or reflect those of the UC-79d Uahcd Sutes Govcrnaieat or aay ageacy thereof. Contract No. W-7405-eng-26 ORIIL-- 5986 DE84 002266 CHARACTERIZATION OF ACTINIDE PHYSICS SPECIMENS FOR THEJJS/UK JOINT EXPERIMENT IN THE JJOUNREAY PROTOTYPE FAST REACTOR Analytical Chemistry Division: R. L. Walker J. L. Botts J. H. Cooper Operations Division: H. L. Adair Chemical Technology Division: J. E. Bigelow Physics Division: S. Raman Date Published: October 1983 This Work Sponsored by U. S. Department of Energy Office of Breeder Technology Projects OAK RIDGE NATIONAL LABORATORY Oak Ridge, Tennessee 37830 operated by UNION CARBIDE CORPORATION for the DEPARTMENT OF ENERGY *rr TABLE OF CONTENTS Page LIST OF TABLES v LIST OF FIGURES vii ABSTRACT ix I. INTRODUCTION 1 II. PHYSICS SPECIMEN CHARACTERIZATION 5 A. Selection of Actinide Materials 5 B. -
Development of a Nbn Deposition Process for Superconducting Quantum Sensors
1 Development of a NbN Deposition Process for Superconducting Quantum Sensors D. M. Glowacka, D. J. Goldie, S. Withington, H. Muhammad, G. Yassin , and B. K. Tan occurs with the addition of the reactive gas during sputtering, Abstract— We have carried out a detailed programme to which in turn affects stoichiometry. It is very important to explore the superconducting characteristics of reactive DC- quantify the location of the best operating point, and this magnetron sputtered NbN. The basic principle is to ignite a requires a careful study of the effects of deposition conditions. plasma using argon, and then to introduce a small additional Thakoor et al. [2] found that high-Tc NbN films were nitrogen flow to achieve the nitridation of a Nb target. Subsequent sputtering leads to the deposition of NbN onto the deposited at the point where the total sputter pressure started host substrate. The characteristics of a sputtered film depend on to increase rapidly with increasing nitrogen flow. In this paper, a number of parameters: argon pressure, nitrogen flow rate and we outline work that we have done to create a high-yield time-evolution profile, substrate material, etc. Crucially, the highly-reproducible deposition process for high-Tc NbN. We hysteresis in the target voltage as a function of the nitrogen flow also briefly describe work on realising and measuring can be used to provide a highly effective monitor of nitrogen resonators of the kind that would be suitable for a KID array consumption during the reactive process. By studying these dependencies we have been able to achieve highly reproducible operating at 3.5 K in an easy-to-use closed-cycle refrigerator. -
Ceramic Carbides: the Tough Guys of the Materials World
Ceramic Carbides: The Tough Guys of the Materials World by Paul Everitt and Ian Doggett, Technical Specialists, Goodfellow Ceramic and Glass Division c/o Goodfellow Corporation, Coraopolis, Pa. Silicon carbide (SiC) and boron carbide (B4C) are among the world’s hardest known materials and are used in a variety of demanding industrial applications, from blasting-equipment nozzles to space-based mirrors. But there is more to these “tough guys” of the materials world than hardness alone—these two ceramic carbides have a profile of properties that are valued in a wide range of applications and are worthy of consideration for new research and product design projects. Silicon Carbide Use of this high-density, high-strength material has evolved from mainly high-temperature applications to a host of engineering applications. Silicon carbide is characterized by: • High thermal conductivity • Low thermal expansion coefficient • Outstanding thermal shock resistance • Extreme hardness FIGURE 1: • Semiconductor properties Typical properties of silicon carbide • A refractive index greater than diamond (hot-pressed sheet) Chemical Resistance Although many people are familiar with the Acids, concentrated Good Acids, dilute Good general attributes of this advanced ceramic Alkalis Good-Poor (see Figure 1), an important and frequently Halogens Good-Poor overlooked consideration is that the properties Metals Fair of silicon carbide can be altered by varying the Electrical Properties final compaction method. These alterations can Dielectric constant 40 provide knowledgeable engineers with small Volume resistivity at 25°C (Ohm-cm) 103-105 adjustments in performance that can potentially make a significant difference in the functionality Mechanical Properties of a finished component. -
Multidisciplinary Design Project Engineering Dictionary Version 0.0.2
Multidisciplinary Design Project Engineering Dictionary Version 0.0.2 February 15, 2006 . DRAFT Cambridge-MIT Institute Multidisciplinary Design Project This Dictionary/Glossary of Engineering terms has been compiled to compliment the work developed as part of the Multi-disciplinary Design Project (MDP), which is a programme to develop teaching material and kits to aid the running of mechtronics projects in Universities and Schools. The project is being carried out with support from the Cambridge-MIT Institute undergraduate teaching programe. For more information about the project please visit the MDP website at http://www-mdp.eng.cam.ac.uk or contact Dr. Peter Long Prof. Alex Slocum Cambridge University Engineering Department Massachusetts Institute of Technology Trumpington Street, 77 Massachusetts Ave. Cambridge. Cambridge MA 02139-4307 CB2 1PZ. USA e-mail: [email protected] e-mail: [email protected] tel: +44 (0) 1223 332779 tel: +1 617 253 0012 For information about the CMI initiative please see Cambridge-MIT Institute website :- http://www.cambridge-mit.org CMI CMI, University of Cambridge Massachusetts Institute of Technology 10 Miller’s Yard, 77 Massachusetts Ave. Mill Lane, Cambridge MA 02139-4307 Cambridge. CB2 1RQ. USA tel: +44 (0) 1223 327207 tel. +1 617 253 7732 fax: +44 (0) 1223 765891 fax. +1 617 258 8539 . DRAFT 2 CMI-MDP Programme 1 Introduction This dictionary/glossary has not been developed as a definative work but as a useful reference book for engi- neering students to search when looking for the meaning of a word/phrase. It has been compiled from a number of existing glossaries together with a number of local additions. -
Synthesis and Photoelectrochemical Characterization of Tantalum Oxide Nanoparticles and Their Nitrogen Derivatives
University of Nevada, Reno Synthesis and Photoelectrochemical Characterization of Tantalum Oxide Nanoparticles and their Nitrogen Derivatives A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Chemical engineering by Vijay Khanal Dr. Vaidyanathan (Ravi) Subramanian – Advisor August 2019 The Graduate School We recommend that the dissertation prepared under our supervision by VIJAY KHANAL Entitled Synthesis and Photoelectrochemical Characterization of Tantalum Oxide Nanoparticles and their nitrogen Derivatives Be accepted in partial fulfillment of the Requirements for the degree of DOCTOR OF PHILOSOPHY Vaidyanathan (Ravi) Subramanian, Ph.D., Advisor Dhanesh Chandra, Ph.D., Committee Member Alan Fuchs, Ph.D., Committee Member Victor Vasquez, Ph.D., Committee Member Mario A. Alpuche, Ph.D. Graduate School Representative David W. Zeh, Ph.D., Dean, Graduate School August 2019 i ABSTRACT This work presents a surfactant-mediated approach for the synthesis of Ta2O5 nanopar- 2 1 2 1 ticles with a very high surface area (41 m g− vs. 1.6 m g− for commercial equivalent), and their subsequent nitridation to yield two distinct nitrogen derivatives: TaON and Ta3N5. Excellent photocatalytic efficiency of Ta2O5 toward photodegradation of methy- lene blue and NOx removal is reported. Ta3N5 shows significant photoconversion of methylene blue attributable to its lowered bandgap and high adsorption capability of MB molecules on its surface. A new method for simplifying the existing synthesis protocols of single phase Tantalum oxynitride (TaON) was devised. Series of photoelectrochemical characterization shows that the newly synthesized TaON can significantly enhance the photoassisted charge generation, separation, and transportation compared to the parent oxide (Ta2O5). -
Novel Semiconductor-Superconductor Structure Features Versatile Gallium Nitride 8 March 2018, by Tom Fleischman
Novel semiconductor-superconductor structure features versatile gallium nitride 8 March 2018, by Tom Fleischman niobium nitride (NbN), a proven superconductor material used in quantum communications, astronomy and a host of other applications. The group's paper, "GaN/NbN Epitaxial Semiconductor/Superconductor Heterostructures," is being published online March 8 in Nature. Former postdoctoral researcher Rusen Yan and current postdoc Guru Khalsa are co-lead authors. Other key contributors were Grace Xing, the Bandgap, lattice constant, crystallinity and Richard Lundquist Sesquicentennial Professor in superconductivity in epitaxial NbNx on SiC. a, Bandgap ECE and MSE, and David Muller, the Samuel B. versus lattice constant for select nitride semiconductors as well as for SiC. b, Cross-section HAADFSTEM Eckert Professor of Engineering in the Department images in black/white (left) and false-colour (right) of of Applied and Engineering Physics. 5-nm NbNx grown on an SiC substrate with a AlN capping layer. c, Resistance versus temperature The method for combining the two materials – (normalized to the resistance at 16K), showing the molecular beam epitaxy (MBE), essentially spray superconducting phase transition of 5-nm (red) and painting of gallium and nitrogen atoms onto the 35-nm (blue) . Credit: Nature (2018). DOI: NbN in a vacuum environment – creates an 10.1038/nature25768 extremely clean interface and is key to the success of the novel structure. This advance, the group says, opens up a range of Silicon has been the semiconductor material of possibilities that can now combine the macroscopic choice for electronics pretty much since the quantum effects of superconductors with the rich transistor effect was first observed and identified electronic and photonic properties of group III- nearly 80 years ago. -
Discovery of Superconductivity in Hard Hexagonal Ε-Nbn
BNL-111904-2016-JA Discovery of Superconductivity in Hard Hexagonal ε-NbN Yongtao Zou1,2, Xintong Qi3, Cheng Zhang4, Shuailing Ma1, Wei Zhang5, Ying Li2, Ting Chen3, Xuebing Wang3, Zhiqiang Chen2, David Welch4,6, Pinwen Zhu1, Bingbing Liu1, Qiang Li4, Tian Cui1 & Baosheng Li2 1State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, China. 2Mineral Physics Institute, State University of New York, Stony Brook, N.Y. 11794, United States. 3Department of Geosciences, State University of New York, Stony Brook, N.Y. 11794, United States. 4Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, N.Y. 11973, United States. 5School of Science, Southwest University of Science and Technology, Mianyang, Sichuan 621010, China. 6Department of Materials Science and Engineering, State University of New York, Stony Brook, N.Y. 11794, United States. *Correspondence and requests for materials should be addressed to Y. Z. (E-mail: [email protected] ), Y. L . (E-mail:[email protected]) **The current ultrasonic, magnetization and electrical resistivity measurements were performed in the U. S. when Yongtao Zou was working at the State University of New York (Stony Brook). Since the discovery of superconductivity in boron-doped diamond with a critical temperature (TC) near 4 K, great interest has been attracted in hard superconductors such as transition-metal nitrides and carbides. Here we report the new discovery of superconductivity in polycrystalline hexagonal ε-NbN synthesized at high pressure and high temperature. Direct magnetization and electrical resistivity measurements demonstrate that the superconductivity in bulk polycrystalline hexagonal ε-NbN is below ~11.6 K, which is significantly higher than that for boron-doped diamond. -
This Thesis Has Been Submitted in Fulfilment of the Requirements for a Postgraduate Degree (E.G
This thesis has been submitted in fulfilment of the requirements for a postgraduate degree (e.g. PhD, MPhil, DClinPsychol) at the University of Edinburgh. Please note the following terms and conditions of use: This work is protected by copyright and other intellectual property rights, which are retained by the thesis author, unless otherwise stated. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This thesis cannot be reproduced or quoted extensively from without first obtaining permission in writing from the author. The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the author. When referring to this work, full bibliographic details including the author, title, awarding institution and date of the thesis must be given. Development of a High Temperature Sensor Suitable for Post-Processed Integration with Electronics Aleksandr Tabasnikov A thesis submitted for the degree of Doctor of Philosophy The University of Edinburgh 2016 Declaration of originality I declare that this thesis has been composed by me, the work is my own, and it has not been submitted for any other degree or professional qualification. Research recorded was carried out by me except as specified below: X-ray diffraction measurement results obtained using X-ray diffractometer Siemens D5000 were collected by Richard Yongqing Fu and his students Jimmy Zhou and Chao Zhao at the University of West of Scotland. Measurement results are analysed in section 4.4.6 of Chapter 4 and have been jointly published in 2014 (DOIs: 10.1109/ICMTS.2014.6841491).