Electromagnetic Modeling of Open Cell Conductive Foams for High Synchrotron Radiation Rings

Total Page:16

File Type:pdf, Size:1020Kb

Electromagnetic Modeling of Open Cell Conductive Foams for High Synchrotron Radiation Rings Proceedings of IPAC2014, Dresden, Germany TUPRI047 ELECTROMAGNETIC MODELING OF OPEN CELL CONDUCTIVE FOAMS FOR HIGH SYNCHROTRON RADIATION RINGS S. Petracca∗ , A. Stabile, University of Sannio, Benevento, INFN, Salerno, Italy Abstract Electrical Properties of Conducting Foams Open cell conductive foams (OCMF) have been recently Electromagnetic modeling of OCMFs has been studied suggested as a possible alternative to perforated metal by several Authors during the last decade. A numerical ap- patches for efficiently handling gas desorption from the proach based on Weiland finite integration technique (FIT, beam pipe wall in high synchrotron radiation machines, in [4]) has been proposed by Zhang et al. [5] to compute the view of its superior performance in terms of residual gas (frequency, thickness and angle of incidence dependent) re- concentration and beam shielding. Here we discuss the flection coefficient of SiC foam. In the quasi-static limit λ 0, the conductivity of OCMFs can be computed us- electromagnetic properties (characteristiuc impedance and −→ propagation constant) of OCMFs and how they affect the ing effective medium theory (EMT), for which several for- beam coupling impedance. mulations exist giving comparable results (see, [6],[7] for a review), e.g., ν σeff = σ0(1 p) , (1) OPEN CELL METAL FOAMS − where σ0 is the bulk metal conductivity, p the porosity, and ν a morphology-dependent factor. Open cell metal foams (OCMF) are highly gas- Measurements of the microwave electromagnetic shield- permeable reticular materials, consisting of a 3D web of ing efficiency of OCMF panels [8] indicate that a simple thin conducting ligaments (Fig. 1), whose typical struc- Drude model ture is shown in Figure 1. OCMF have remarkable struc- 2 ω ǫ0 σ(ω) = p (2) ı ω + ν provides a good description of the frequency-dependent conductance of metallic foams. Typically, the relevant plasma and collision frequencies, ωp and ν are of the order of a few tens of GHz and a few tens of KHz, respectively, much smaller than their solid metal counterparts (typically in the PHz and GHz range, respectively [9]). OCMF Impedance and Skin Depth Throughout a typical beam current frequency spectrum, OCMF and bulk metals behave differently1. In bulk metals , ω ν ω so that the characteristic impedance Z ≪ ≪ p m and (complex) propagation constant k˜m can be written Figure 1: A typical OCMF at two different viewing scales. 1 + ı ων 1/2 1 ı ω ˜ (3) Zm 2 Z0, km − k0(ωp) ∼ √2 ωp ∼ √2 r ν tural properties (low density and weight, high (tensile and 1/2 shear)-strength to weight ratio, nearly isotropic load re- with Y0 = (ǫ0/µ0) = 1/Z0 the vacuum admittance, and ˜ sponse, low coefficient of thermal expansion), which qual- k0(ω) = ω/c. In metallic conductors, both Zm and km are ified them among the most interesting new materials for ω1/2. ∝ aerospace applications [1]. The key morphological param- In OCMFs ν ω ωp throughout the beam current ≪ ≪ eters of OCMF are the ”pore” size, and the porosity (vol- spectrum, so that the material exhibits a plasmonic behav- ume fraction of pores). Pore sizes in the range from 10−6 ior. The OCMF wall (characteristic) impedance Zf and −3 to 10 m and porosities in the range 0.7 - 0.99 are typ- (complex) propagation constant k˜f are thus given (to low- ical. These parameters determine the gas-permeability of est order in the small quantities ν/ω and ω/ωp) by the material, and, together with the electrical properties of ν ω ν the metal matrix, its electrical characteristics. OCMF may Z Z + ı , k˜ k (ω ) ı (4) f ∼ 0 2ω ω f ∼ 0 p 2ω − replace perforated metal patches in high synchrotron radi- p p ation accelerators [2], in view of their potentially superior 1In the case of LHC, the beam current power spectrum consists of lines performance in terms of outgassing and beam shielding [3]. at integer multiples of f0 = c/δb, δb being the bunch spacing, with an envelope approximately ∝ cos2. The −20 dB bandwidth is ∼ 1 GHz, 5 −1 roughly 10 times the circulation frequency ωR, and 10 times the cut- ∗ [email protected] off frequency of the lowest beam pipe waveguide mode [10]. 05 Beam Dynamics and Electromagnetic Fields ISBN 978-3-95450-132-8 D05 Instabilities - Processes, Impedances, Countermeasures 1671 Copyright © 2014 CC-BY-3.0 and by the respective authors TUPRI047 Proceedings of IPAC2014, Dresden, Germany Hence, the OCMF characteristic resistance Rf = are simply proportional to the average wall impedance, as- Re[Zf ] and skin depth δf are both frequency inde- sumed piecewise constant pendent, and, e.g., for the case of high-grade (ρ 5.510−10 ohm cm−1 at 20K) Copper foam with p = 0.≈9, Z = ξ Z(i) (10) h walli i wall both fairly small: Xi ξ being the surface fraction covered by patches with wall Z0 ν −5 c −4 i Rf 1.4 10 ohm, δf 6 10 m. (i) ∼ 2 ωp ≈ · ∼ ωp ≈ · impedance Zwall. (5) The OCMF characteristic reactance OCMF Impedance Budget ω Equations (7) to (10) allow to evaluate the impedance X = Im[Z ] ıZ (6) budget of an OCMF patched beam pipe. A straightforward f f ∼ 0 ω p solution, which is not included for brevity, of the electro- on the other hand, is large compared to that of bulk metal, magnetic boundary value problem for a (relativistic, van- and grows linearly with ω. For the case, e.g., of high- ishingly thin) axial beam in a circular conducting liner, 4 with radius a and thickness ∆ surrounded by a co-axial grade Copper foam with p = 0.9, Xf 0.5 ohm at 10 Hz. ≈ (infinitely thick) conducting circular tube (the cold bore) with radius b > a + ∆, shows that if ∆ > δf in eq. (5) BEAM COUPLING IMPEDANCES across the whole beam current spectrum, the Leontovich´ impedance of the cold bore backed liner wall OCMF patch The following relationship exists (to 1st order in the wall is fairly well approximated by the intrinsic impedance of impedance) between the longitudinal impedance per unit the OCMF. ¯ length Zk of a patched-wall beam liner and the (known) The contribution of the surface roughness of the foam to ¯(0) the OCMF wall impedance can be estimated as [14] longitudinal impedance per unit length Zk of the same pipe with a perfectly conducting wall [11] (rough) π h ω Zf ı Z0 h, (11) (0) ǫ0Y0 2 ≈ r32 L c Z¯ =Z¯ + Zw(s) E0n(s) ds, (7) k k cΛ2 I | | ∂S h and L being the r.m.s. height and correlation length of where Zw is the (local) Leontovich´ impedance [12] of the the surface roughness, respectively. patched wall, ∂S is the pipe cross-section contour, Λ the The numerical values of the above impedance compo- (0) nents, normalized to the mode number (i.e., multiplied by beam linear charge density, and En the (known) field component normal to the pipe wall in the perfectly con- the (ωR/ω) factor), have been collected in Table 1, where ducting pipe. A similar formula, not included for brevity, the solid metal values are also shown for comparison. Here we assume high-grade Copper (ρ 5.510−10 ohm cm−1 exists for the (dyadic) transverse impedance [11] as well. ≈ Beam coupling impedances embody a synthetic descrip- at 20K) for the solid and foamed material. For this lat- tion of beam stability. The absolute value and imaginary ter we assume a pore diameter 1 mm, and a ligament ∼ 10 −1 ¯ size 0.1 mm, yielding ωp 7.93 10 rad sec and part of Zk are, e.g., inversely proportional to the thresh- ν ∼3.66 104 Hz in the Drude≈ model· of Section , consis- old currents for (single-bunch) microwave instability and ≈ · ¯ tent with typical measured values of the static conductance, Landau damping suppression [13]). The real part of Zk de- termines the parasitic loss (energy lost by the beam per unit and a r.m.s. roughness scale h .125 mm with correlation length L 0.25 mm. ≈ pipe length), via [13] ≈ +∞ 1 2 ¯ Table 1: Zwall of Solid and OCMF High-Grade Cu ∆ = I(ω) e [Zk(ω)]dω, (8) E 2π Z−∞ | | ℜ [ohm] Solid OCMF −6 −5 where I(ω) and Zk(ω) ie the beam-current spectrum. (ωR/ω)Rwall 4.910 ωR/ω 1.410 (ωR/ω) −6 −5 According to (7), perforated/slotted or OCMF patches, (ωR/ω)Xwall 4.910 pωR/ω 5.510 (0) p placed where the normal field component En is minimum, have minimum impact on the longitudinal As seen from Table 1, the Copper wall resistance is 5 impedance. larger than that of the OCMF up to ω = 10 ωR. On the (0) The circular beam liner with radius s, where En is uni- other hand, as anticipated in Section , the OCMF wall re- form along ∂S, represents a worst case, where [13] the lon- actance is relatively large . gitudinal and transverse impedances per unit length It exceeds that of a perfectly conducting slotted by roughly one order of magnitude, at a 10% escape probabil- Z Z ity level). as well as that of solid Copper. Indeed, while the ¯ wall ¯ wall (9) Zk = h i, Z⊥ = h 3i 2πa 2πk0a typical escape probability of an OCMF wall is roughly one ISBN 978-3-95450-132-8 05 Beam Dynamics and Electromagnetic Fields Copyright ©1672 2014 CC-BY-3.0 and by the respective authors D05 Instabilities - Processes, Impedances, Countermeasures Proceedings of IPAC2014, Dresden, Germany TUPRI047 order of magnitude larger than the limiting one of a slotted [13] B.W.
Recommended publications
  • A Novel Solid State Ultracapacitor
    National Aeronautics and NASA/TM—2017–219686 Space Administration IS02 George C. Marshall Space Flight Center Huntsville, Alabama 35812 A Novel Solid State Ultracapacitor A.Y. Cortés-Peña Johnson Space Center, Houston, Texas T.D. Rolin and S.M. Strickland Marshall Space Flight Center, Huntsville, Alabama C.W. Hill CK Technologies, Meridianville, Alabama August 2017 The NASA STI Program…in Profile Since its founding, NASA has been dedicated to the • CONFERENCE PUBLICATION. Collected advancement of aeronautics and space science. The papers from scientific and technical conferences, NASA Scientific and Technical Information (STI) symposia, seminars, or other meetings sponsored Program Office plays a key part in helping NASA or cosponsored by NASA. maintain this important role. • SPECIAL PUBLICATION. Scientific, technical, The NASA STI Program Office is operated by or historical information from NASA programs, Langley Research Center, the lead center for projects, and mission, often concerned with NASA’s scientific and technical information. The subjects having substantial public interest. NASA STI Program Office provides access to the NASA STI Database, the largest collection of • TECHNICAL TRANSLATION. aeronautical and space science STI in the world. English-language translations of foreign The Program Office is also NASA’s institutional scientific and technical material pertinent to mechanism for disseminating the results of its NASA’s mission. research and development activities. These results are published by NASA in the NASA STI Report Specialized services that complement the STI Series, which includes the following report types: Program Office’s diverse offerings include creating custom thesauri, building customized databases, • TECHNICAL PUBLICATION. Reports of organizing and publishing research results…even completed research or a major significant providing videos.
    [Show full text]
  • TION GALVANOMETERS in the Vibration Galvanorneter
    A paper to be presented at the 29th Annual Con* vention of the American Institute of Electrical Engineers, Boston, Mass., June 25, 1912. Copyright, 1912. By Α. I. Ε. E. (Subject to final revision for the Transactions.) CHARACTERISTICS AND APPLICATIONS OF VIBRA- TION GALVANOMETERS BY FRANK WENNER In the vibration galvanorneter we have a type of synchronous motor which is distinctly different from all the ordinary types of dynamo electric machines. Further it does not have any of the characteristics of any of the ordinary galvanometers and except for the fact that it is used in the detection or measure­ ment of small currents and voltages, it should not be called a galvanometer. In galvanometers, except when used in the measurement of transient currents or quantity of electricity, the moving system is displaced until we have an equality of static couples acting on it. In the vibration galvanometer the equilibrium condition is an equality between integral values of the product of the current and generated voltage and the mechanical power dissipated in various ways as in ordinary electric motors when operated without a load. It therefore behaves more like an electric motor than like a galvanometer. Further, since it is used only with alternating currents and op­ erates in synchronism with the current it must necessarily have some of the characteristics of a synchronous motor. As a motor the efficiency of conversion was found in a particular case to be as high as 97J per cent while the power required to maintain an easily discernable amplitude of vibration was of the order of 10-11 watts.
    [Show full text]
  • HOW the SCIO TECHNOLOGY WORKS Many Have Asked What Is
    HOW THE SCIO TECHNOLOGY WORKS Many have asked what is measured by the SCIO/QXCI medical device. This incredible advancement in medicine measures subtle electrical factors of the body. The history of alternative medicine has been dominated by old style resistance measuring devices. These antique devices depended on the operator to apply the probe to the acupuncture point. By subtle changing the speed of probe delivery (not the pressure), the operator could influence the outcome. This prevented true results. The other complication was the limits of just resistance testing. The body is much more complicated than just resistance. The electrical factors of the body include voltage, amperage, capacitance, inductance, frequency, and many others. The basics of bio-electrical medicine lie in the voltage, amperage, and resistance. The only thing that can truly be measured in electricity is the voltage and amperage. Everything else is a mathematical variation of voltage and amperage. So the QXCI device starts by measuring multiple channels of this information. Multiple channels are needed so that we can see variations in the electrical potential and flow of the body total. So we measure the extremities and the head. This direct measurement is of four channels of voltage, four of amperage, and four of resistance. These come into the computer for amplification and the computer acts as a frequency counter for receiving this data. This makes an active twelve channel measuring device. Other calculations are made mathematically. Resistance cannot be measured directly. It must be calculated from an amperage or voltage meter. Same as that any capacitance meters cannot directly measure capacitance it must do a mathematical adjustment of voltage and amperage flow.
    [Show full text]
  • Arxiv:1708.02856V1 [Cond-Mat.Mes-Hall] 9 Aug 2017 Systems Close to Equilibrium
    Probing the energy reactance with adiabatically driven quantum dots Mar´ıaFlorencia Ludovico,1, 2 Liliana Arrachea,1, 3 Michael Moskalets,4 and David S´anchez5 1International Center for Advanced Studies, UNSAM, Campus Miguelete, 25 de Mayo y Francia, 1650 Buenos Aires, Argentina 2The Abdus Salam International Centre for Theoretical Physics, Strada Costiera 11, I-34151 Trieste, Italy 3Dahlem Center for Complex Quantum Systems and Fachbereich Physik, Freie Universit¨atBerlin, 14195 Berlin, Germany 4Department of Metal and Semiconductor Physics, NTU "Kharkiv Polytechnic Institute", 61002 Kharkiv, Ukraine 5Institute for Cross-Disciplinary Physics and Complex Systems IFISC (UIB-CSIC), E-07122 Palma de Mallorca, Spain The tunneling Hamiltonian describes a particle transfer from one region to the other. While there is no particle storage in the tunneling region itself, it has associated certain amount of energy. We name the corresponding flux energy reactance since, like an electrical reactance, it manifests itself in time-dependent transport only. Noticeably, this quantity is crucial to reproduce the universal charge relaxation resistance for a single-channel quantum capacitor at low temperatures. We show that a conceptually simple experiment is capable of demonstrating the existence of the energy reactance. PACS numbers: 73.23.-b, 72.10.Bg, 73.63.Kv, 44.10.+i Motivation. A very exciting experimental activity is lately taking place in search of controlling on-demand quantum coherent charge transport in the time domain. The recent burst of activity started with the experimen- Floating contact tal realization of quantum capacitors in quantum dots under ac driving [1], single particle emitters [2], and was followed by the generation of quantum charged solitons over the Fermi sea (levitons) [3].
    [Show full text]
  • Hypothesis of the Hidden Multiverse Explains Dark Matter and Dark Energy
    Journal of Modern Physics, 2016, 7, 1228-1246 Published Online June 2016 in SciRes. http://www.scirp.org/journal/jmp http://dx.doi.org/10.4236/jmp.2016.710111 Hypothesis of the Hidden Multiverse Explains Dark Matter and Dark Energy Alexander Alexandrovich Antonov Research Center of Information Technologies “TELAN Electronics”, Kiev, Ukraine Received 12 May 2016; accepted 24 June 2016; published 28 June 2016 Copyright © 2016 by author and Scientific Research Publishing Inc. This work is licensed under the Creative Commons Attribution International License (CC BY). http://creativecommons.org/licenses/by/4.0/ Abstract Analysis of WMAP and Planck spacecraft data has proved that we live in an invisible Multiverse, referred to as hidden, that has a quaternion structure. It explains the reason for the mutual invisi- bility of parallel universes contained in the hidden Multiverse. It is shown that the hidden Multi- verse includes most likely twenty parallel universes from different dimensions, six of which are adjacent to our universe. Besides, edges of the hidden Multiverse are connected to other (from one to four) Multiverses, which are observable neither by electromagnetic nor by gravitational ma- nifestations. The Multiverse described contains four matter-antimatter pairs, annihilation of which is prevented by relative spatial position of the universes. The experimental proof of exis- tence of the hidden Multiverse is explained to be the phenomenon of dark matter and dark energy that correspond to other invisible parallel universes, except ours, included in the hidden Multi- verse. General scientific principle of physical reality of imaginary numbers, refuting some of the statements of the existing version of the special theory of relativity, is a physical and mathematical foundation of the outlined conception of the hidden Multiverse.
    [Show full text]
  • Capacitive Reactance This Worksheet and All Related Files Are Licensed
    Capacitive reactance This worksheet and all related files are licensed under the Creative Commons Attribution License, version 1.0. To view a copy of this license, visit http://creativecommons.org/licenses/by/1.0/, or send a letter to Creative Commons, 559 Nathan Abbott Way, Stanford, California 94305, USA. The terms and conditions of this license allow for free copying, distribution, and/or modification of all licensed works by the general public. Resources and methods for learning about these subjects (list a few here, in preparation for your research): 1 Questions Question 1 As a general rule, capacitors oppose change in (choose: voltage or current), and they do so by . (complete the sentence). Based on this rule, determine how a capacitor would react to a constant AC voltage that increases in frequency. Would an capacitor pass more or less current, given a greater frequency? Explain your answer. file 00579 Question 2 R f(x) dx Calculus alert! We know that the formula relating instantaneous voltage and current in a capacitor is this: de i = C dt Knowing this, determine at what points on this sine wave plot for capacitor voltage is the capacitor current equal to zero, and where the current is at its positive and negative peaks. Then, connect these points to draw the waveform for capacitor current: e C e 0 Time How much phase shift (in degrees) is there between the voltage and current waveforms? Which waveform is leading and which waveform is lagging? file 00577 Question 3 You should know that a capacitor is formed by two conductive plates separated by an electrically insulating material.
    [Show full text]
  • ELTR 110 (AC 1), Section 1 Recommended Schedule Day 1
    ELTR 110 (AC 1), section 1 Recommended schedule Day 1 Topics: Basic concepts of AC and oscilloscope usage Questions: 1 through 20 Lab Exercise: Analog oscilloscope set-up (question 81) Day 2 Topics: RMS quantities, phase shift, and phasor addition Questions: 21 through 40 Lab Exercise: RMS versus peak measurements (question 82) and measuring frequency (question 83) Day 3 Topics: Inductive reactance and impedance, trigonometry for AC circuits Questions: 41 through 60 Lab Exercise: Inductive reactance and Ohm's Law for AC (question 84) Day 4 Topics: Series and parallel LR circuits Questions: 61 through 80 Lab Exercise: Series LR circuit (question 85) Day 5 Exam 1: includes Inductive reactance performance assessment Lab Exercise: Oscilloscope probe ( 10) compensation (question 86) £ Practice and challenge problems Questions: 89 through the end of the worksheet Impending deadlines Troubleshooting assessment (AC bridge circuit) due at end of ELTR110, Section 3 Question 87: Troubleshooting log Question 88: Sample troubleshooting assessment grading criteria 1 ELTR 110 (AC 1), section 1 Skill standards addressed by this course section EIA Raising the Standard; Electronics Technician Skills for Today and Tomorrow, June 1994 C Technical Skills { AC circuits C.01 Demonstrate an understanding of sources of electricity in AC circuits. C.02 Demonstrate an understanding of the properties of an AC signal. C.03 Demonstrate an understanding of the principles of operation and characteristics of sinusoidal and non- sinusoidal wave forms. C.05 Demonstrate an understanding of measurement of power in AC circuits. C.11 Understand principles and operations of AC inductive circuits. C.12 Fabricate and demonstrate AC inductive circuits.
    [Show full text]
  • Low Frequency Bio-Electrical Impedance Mammography and Dielectric Measurement
    Western University Scholarship@Western Electronic Thesis and Dissertation Repository 10-21-2016 12:00 AM Low Frequency Bio-Electrical Impedance Mammography and Dielectric Measurement Seyyed Hesabgar The University of Western Ontario Supervisor Dr. Samani The University of Western Ontario Graduate Program in Medical Biophysics A thesis submitted in partial fulfillment of the equirr ements for the degree in Doctor of Philosophy © Seyyed Hesabgar 2016 Follow this and additional works at: https://ir.lib.uwo.ca/etd Part of the Biomedical Devices and Instrumentation Commons Recommended Citation Hesabgar, Seyyed, "Low Frequency Bio-Electrical Impedance Mammography and Dielectric Measurement" (2016). Electronic Thesis and Dissertation Repository. 4208. https://ir.lib.uwo.ca/etd/4208 This Dissertation/Thesis is brought to you for free and open access by Scholarship@Western. It has been accepted for inclusion in Electronic Thesis and Dissertation Repository by an authorized administrator of Scholarship@Western. For more information, please contact [email protected]. Abstract Assessment of electrical impedance of biological tissues at low frequencies offers a great potential for a safe, simple, and low-cost medical breast imaging techniques such as mammography. As such, in this dissertation a mammography method which uses tissue electrical impedance to detect breast malignancies was developed. The dissertation also introduces a new technique for measuring the dielectric properties of biological tissues at low frequencies. The impedance mammography technique introduced in this study is founded on the assumption that dielectric values of breast malignancies are significantly higher than the dielectric values of normal breast tissues. While previous studies have shown that this assumption is valid at high frequencies (50MHz-20GHz), less research efforts have been dedicated to ascertain the validity of such assumption at low frequencies (<1MHz).
    [Show full text]
  • United States Patent [191 [II] Patent Number: 4,575,690 Walls Et Al
    * "4 United States Patent [191 [II] Patent Number: 4,575,690 Walls et al. [45] Date of Patent: Mar. 11, 1986- [54] ACCELERATION INSENSITIVE 4,453,141 6/1984 Rosati .................................. 32 1/1 LS OSCILLATOR Primary Exatnitrer-Eugene R. LaRoche [75] Inventors: Fred L. Walls, Boulder, Colo.; John Assislatrr Exatttitrer-Jnnies C. Lee R. Vig, Colts Neck, N.J. Attorney, Agent, or Finn-Anthony T. Lane; Jeremiah G. Murray; John T. Rehberg I731 Assignee: The United Stated of America 81 represented by the Secretary of the P71 ABSTRACT Army, Wildiiligt(w, D.C. A crystiil oscill:itor, iiiclutliiig Itvo cryst:tls 01' uticq~i;il [21] Appl. No.: 715,862 acceleration sensitivity niiigiiitude illid mounted such 1 that their respective acceleration sensitivity vectors are [22] Filed: Mar. 25, 1985 aligned in an anti-parallel relationship, further includes at least one electrical reactance, such as a variable CB- [51] Int. c1.4 ............................................... H03B 5/32 [52] US. C1. ................................ 331/162; 331/116 R; pacitor, coupled to one of the crystals for providing 331/158 cancellation of acceleration sensitivities. After the ac- I581 Field of Search ....................... 310/311, 360, 361; celeration sensitivity vectors of the two crystals are 331/116 R, 158, 160, I62 aligned anti-parallel, the variiible capacitor is ad.jiisted until the iict or result;int accclcr:itioii sciisitivity vccior ~561 References Cited of the pair of resonators is reduced to zero. A second U.S. PATENT DOCUMENTS electrical reactance, such ils a vari;ible capacitor, is utilized as a tuning capacitor for adjusting the oscilla- 3,978,432 8/1916 Onw ..................................
    [Show full text]
  • Modelling of Distorted Electrical Power and Its Practical Compensation in Industrial Plant
    MODELLING OF DISTORTED ELECTRICAL POWER AND ITS PRACTICAL COMPENSATION IN INDUSTRIAL PLANT By JAN HARM CHRISTIAAN PRETORIUS THESIS presented in partial fulfilment of the requirements for the degree DOCTOR 1NGENERIAE ' (D. Ing) in the FACULTY OF ENGINEERING of the RAND AFRIKAANS UNIVERSITY SUPERVISOR: PROF. J.D. van WYK CO-SUPERVISOR: DR. P.H. SWART DECEMBER 1997 11 PREFACE Alternating current systems employing single-frequency sinusoidal waveforms render optimal service when the currents in that system are also sinusoidal and have a fixed phase relationship to the voltages that drive them. Under unity- power factor conditions, the currents are in phase with the voltages and optimal net-energy transfer takes place under minimum loading conditions, i.e. with the lowest effective values of current and voltage in the system. The above conditions were realised in the earlier years, because supply authorities generated 50 Hz sinusoidal voltages and consumers drew 50 Hz sinusoidal currents with fixed phase relationships to these voltages. Static and rotating electrical equipment like transformers, motors, heating and lighting equipment were equally compatible with this requirement and well-behaved AC networks were more the rule than the exception. The fact that three-phase systems conveyed the bulk of the power from one topographical location to the next did not constrain the utilisation of that concept at all, even though poly-phase transmission systems were necessary to increase the economy of transmission and to furnish non-pulsating power transfer. Also, additional theory had to be developed to handle unbalanced conditions in these multi-phase systems and to take care of complex network analysis and fault conditions.
    [Show full text]
  • Title Electrical Reactance and Its' Correlates In
    TITLE ELECTRICAL REACTANCE AND ITS' CORRELATES IN BIOLOGICAL SYSTEMS BY NELSON W. C. NMD LPCC AND NIEBER, JOZSEF HIPPOCAMPUS INSTITUTE BUDAPEST , HUNGARY 1995 ABSTRACT: In this short paper we review some of the basic principle of reactance and draw correlates to reactivity in biological systems. Biological organisms indeed have electrical capacities. Electronic stability is important for every cell in maintaining its' life. Reactance is one way that the cell could react with its external environment. This article draws correlates to cell membrane capacitance and inductance changes as possible ways of understanding the electronic function of a cell . Thus classical electronic theory could be used to describe the phenomena of cell reactivity. This has offered potentials for deeper development of bio electronic device interface, and diagnostic medical instrumentation. page 1 REVIEW OF ELECTRONIC REACTIVITY INTRODUCTION: Reactance was first described as the ability of an electronic circuit to react to voltage and amperage changes. Reactance allows us to understand the range of responsiveness of a circuit as well as its sensitivities. In fact Reactance is a correlate to sensitivity in a circuit. The voltage and amperage changes applied to a circuit effect and are effected by the capacitance and inductance of the circuit. These determine the then the reactance or range of sensitivity of the circuit and set response characteristics of the circuit. In the Handbook of Electronic Tables and Formulas (Sams & Co.) (ref. 1986 ), reactance is defined now as opposition to the flow of alternating current by the inductance or capacitance of a component or circuit. The handbook further defines capacitance reactance differing from inductance reactance.
    [Show full text]
  • Instrumentation and Control Qualification Standard
    Instrumentation and Control Qualification Standard DOE-STD-1162-2013 June 2013 Reference Guide The Functional Area Qualification Standard References Guides are developed to assist operators, maintenance personnel, and the technical staff in the acquisition of technical competence and qualification within the Technical Qualification Program (TQP). Please direct your questions or comments related to this document to the Office of Leadership and Career Management, TQP Manager, NNSA Albuquerque Complex. This page is intentionally blank. Table of Contents FIGURES ...................................................................................................................................... iii TABLES ......................................................................................................................................... v VIDEOS ........................................................................................................................................... v ACRONYMS ............................................................................................................................... vii PURPOSE ...................................................................................................................................... 1 SCOPE ........................................................................................................................................... 1 PREFACE .....................................................................................................................................
    [Show full text]