Room Temperature Operation of UV Photocatalytic Functionalized Algan/Gan Heterostructure Hydrogen Sensor

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Room Temperature Operation of UV Photocatalytic Functionalized Algan/Gan Heterostructure Hydrogen Sensor nanomaterials Communication Room Temperature Operation of UV Photocatalytic Functionalized AlGaN/GaN Heterostructure Hydrogen Sensor June-Heang Choi 1 , Taehyun Park 2 , Jaehyun Hur 2,* and Ho-Young Cha 1,* 1 School of Electronic and Electrical Engineering, Hongik University, Seoul 04066, Korea; [email protected] 2 Department of Chemical and Biological Engineering, Gachon University, Seongnam 13120, Gyeonggi, Korea; [email protected] * Correspondence: [email protected] (J.H.); [email protected] (H.-Y.C.) Abstract: An AlGaN/GaN heterostructure based hydrogen sensor was fabricated using a dual cata- lyst layer with ZnO-nanoparticles (NPs) atop of Pd catalyst film. The ZnO-NPs were synthesized to have an average diameter of ~10 nm and spin coated on the Pd catalyst layer. Unlike the conventional catalytic reaction, the fabricated sensors exhibited room temperature operation without heating owing to the photocatalytic reaction of the ZnO-NPs with ultraviolet illumination at 280 nm. A sensing response of 25% was achieved for a hydrogen concentration of 4% at room temperature with fast response and recovery times; a response time of 8 s and a recovery time of 11 s. Keywords: AlGaN/GaN; ZnO-nanoparticles; Pd; photocatalyst; hydrogen sensor; ultraviolet Citation: Choi, J.-H.; Park, T.; Hur, J.; 1. Introduction Cha, H.-Y. Room Temperature Hydrogen is presently being studied as an alternative energy source for eco-friendly Operation of UV Photocatalytic renewable energy generation instead of fossil fuels [1,2]. The successful utilization of Functionalized AlGaN/GaN hydrogen requires highly sensitive and reliable safety sensors. For example, hydrogen Heterostructure Hydrogen Sensor. explosions occur at concentrations exceeding 4.65% [3–5]; therefore, the sensor must detect Nanomaterials 2021, 11, 1422. https:// low levels of hydrogen quickly and accurately. doi.org/10.3390/nano11061422 Among various types of sensors, an FET-type sensor with a catalytic gate material has been widely studied due to its compact size and low power consumption. A catalytic Academic Editor: Gabriella Caminati reaction with a target gas changes the surface potential of FET, which in turn modulates the FET current [5–7]. Received: 13 April 2021 Gallium nitride (GaN) has a wide energy bandgap of 3.4 eV [8–13], which results in Accepted: 25 May 2021 a low intrinsic carrier density allowing GaN to maintain its semiconductor properties at Published: 28 May 2021 much temperatures higher than those possible with Si or GaAs. When an AlGaN/GaN heterostructure is formed, a 2-dimensional electron gas (2DEG) channel is created with Publisher’s Note: MDPI stays neutral high mobility at the interface [14–16]. Since the AlGaN thickness is generally of the order with regard to jurisdictional claims in published maps and institutional affil- of a few tens of nanometers, the channel current strongly depends on the surface potential iations. change, thus resulting in sensitive responses from the sensor. Therefore, an AlGaN/GaN heterostructure would be a great candidate for the sensing platform. Various catalysts have been investigated for use in hydrogen sensors, including metals and metal oxides. Pt, Pd, and Ru are known to have high hydrogen solubility [17–26]. Metal oxides, such as ZnO, TiO2, SnO2, WO2, PdO, In2O3, and Fe2O3, have been studied Copyright: © 2021 by the authors. mostly as resistive sensors where adsorbed oxygen ions play an important role in the Licensee MDPI, Basel, Switzerland. reaction mechanism [27–40]. This article is an open access article distributed under the terms and Since the typical catalytic reaction with hydrogen occurs at elevated temperatures [41], conditions of the Creative Commons the sensor module must be heated using a separate or integrated heater, which incurs extra Attribution (CC BY) license (https:// power and time for stabilization. In addition, thermal heating of the catalyst and sensor creativecommons.org/licenses/by/ platform degrades long-term reliability [42]. Therefore, there is a strong demand for a hy- 4.0/). drogen sensor operating at room temperature without heating. A possible solution would Nanomaterials 2021, 11, 1422. https://doi.org/10.3390/nano11061422 https://www.mdpi.com/journal/nanomaterials Nanomaterials 2021, 11, x FOR PEER REVIEW 2 of 10 Nanomaterials 2021, 11, 1422 for a hydrogen sensor operating at room temperature without heating. A possible2 of 10 solution would be a photocatalytic reaction where the gas reaction with catalyst material is accel- erated by photoreaction. Indeed, it was reported that metal oxides reacted with hydrogen atbe room a photocatalytic temperature reaction with whereexposure the gas to reactionultraviole witht (UV) catalyst light material [43–47]. is acceleratedIn this study, by an Al- GaN/GaNphotoreaction. FET Indeed, sensor itwas was fabricated reported that using metal a dual oxides catalyst reacted layer with hydrogenwith ZnO-nanoparticles at room (NPs)temperature atop of with Pd exposure catalyst tofilm, ultraviolet which (UV) exhibited light [43 room–47]. Intemperature this study, an sensing AlGaN/GaN capability of FET sensor was fabricated using a dual catalyst layer with ZnO-nanoparticles (NPs) atop hydrogen with UV illumination. of Pd catalyst film, which exhibited room temperature sensing capability of hydrogen with UV illumination. 2. Experiment and Results 2. ExperimentFigure 1 illustrates and Results the synthesis process of ZnO-NPs. The precursor solution was the hydrolysisFigure 1of illustrates Zn(CH3COO) the synthesis2 2H2O (Sigma-Aldrich, process of ZnO-NPs. St. Louis, The precursor MO, USA) solution with wasKOH (Sam- chun,the hydrolysis Samchun, of Zn(CHSeoul,3 COO)South2 ·Korea,2H2O (Sigma-Aldrich, 95%) in methanol St. Louis, (Sigma-Aldrich, MO, USA) with St. KOHLouis, MO, (Samchun, Samchun, Seoul, South Korea, 95%) in methanol (Sigma-Aldrich, St. Louis, MO, USA, 99.9%). ZnO-NPs formed after 2 h reaction were separated by centrifugation. A de- USA, 99.9%). ZnO-NPs formed after 2 h reaction were separated by centrifugation. A taileddetailed synthesis synthesis process process and thethe characterization characterization for for the synthesizedthe synthesized ZnO-NPs ZnO-NPs can be can be foundfound in refref [[48].48]. FigureFigure 1. Synthesis process process for for ZnO-NPs. ZnO-NPs. The crystal structure of the ZnO-NPs was investigated using powder X-ray diffraction, whichThe is showncrystal in structure Figure2a. of The the crystal ZnO-NPs planes was of the investigated crystalline ZnO-NPs using powder corresponding X-ray diffrac- tion,to the which observed is shown diffraction in Figure peaks 2a. are The indicated crystal in planes the plot, of confirmingthe crystalline the successfulZnO-NPs corre- spondingsynthesis ofto ZnO-NPs.the observed The internaldiffraction and surfacepeaks ar chemicale indicated bonding in the state plot, of ZnO-NPs confirming was the suc- cessfulanalyzed synthesis through of X-ray ZnO-NPs. photoelectron The internal spectroscopy and surface (XPS). Figurechemical2b represents bonding thestate O of ZnO- NPs1 s spectrum was analyzed of ZnO-NPs through where X-ray three photoelectron distinct binding spectroscopy energy peaks (XPS). were Figure observed 2b represents at the529.6, O 1 531.0, s spectrum and 532.1 of eV,ZnO-NPs which corresponded where three to distinct the O atom binding in the energy Zn-O bonding peaks were (lattice observed − atoxygen), 529.6, oxygen531.0, and sublattice 532.1 imperfectioneV, which corresp (oxygenonded vacancy) to andthe surfaceO atom adsorbed in the Zn-O O2 of bonding (latticeZnO-NPs, oxygen), respectively oxygen [49 –sublattice51]. This XPS imperfecti result demonstrateson (oxygen thevacancy) presence and of thesurface ionized adsorbed oxygen molecules at the ZnO-NP surface, which plays an important role in the catalytic O2- of ZnO-NPs, respectively [49–51]. This XPS result demonstrates the presence of the reaction under UV illumination. The absorption spectrum of ZnO-NPs as a function of ionizedwavelength oxygen was alsomolecules measured at tothe estimate ZnO-NP the surface, optical bandgap which plays of ZnO-NPs. an important Figure3 a,brole in the catalyticshow the reaction absorption under spectrum UV illumination. and Tauc plot The of theabsorption ZnO-NPs spectrum thin film of from ZnO-NPs which the as a func- tionoptical of wavelength bandgap was was estimated also measured to be 3.24 eV. to Theesti widemate bandthe optical gap of ZnO-NPsbandgap can of ZnO-NPs. selectively Figure 3a,babsorb show UV lightthe absorption that can remove spectrum the oxygen and Tauc molecules plot adsorbedof the ZnO-NPs on the ZnO-NPs thin film surface. from which the optical bandgap was estimated to be 3.24 eV. The wide band gap of ZnO-NPs can selectively absorb UV light that can remove the oxygen molecules adsorbed on the ZnO- NPs surface. Nanomaterials 2021, 11, x FOR PEER REVIEW 3 of 10 NanomaterialsNanomaterials 20212021,,, 1111,,, 1422xx FORFOR PEERPEER REVIEWREVIEW 33 of of 1010 Figure 2. (a) X-ray diffraction pattern and (b) O 1s XPS spectra of as-synthesized ZnO-NPs. Figure 2. (a) X-ray diffraction patternpattern andand ((b)) OO 1s1s XPSXPS spectraspectra ofof as-synthesizedas-synthesized ZnO-NPs.ZnO-NPs. Figure 3. (a) Absorption spectrum and (b) Tauc plot of ZnO-NPs thin film. Figure 3. (a) Absorption spectrum andand ((b)) TaucTauc plotplot ofof ZnO-NPsZnO-NPs thinthin film.film. Figure 4a,b shows Transmission Electron Microscopy (TEM) and High-Resolution Figure4 4a,ba,b showsshows TransmissionTransmission Electron Electron Microscopy Microscopy (TEM) (TEM) and and High-Resolution High-Resolution TEM (HRTEM)Figure 4a,b images shows of TransmissionZnO-NPs, respective Electronly. Microscopy The size of ZnO-NPs(TEM) and was High-Resolution in the range TEM (HRTEM)(HRTEM) imagesimages of of ZnO-NPs, ZnO-NPs, respectively. respectively. The The size size of of ZnO-NPs ZnO-NPs was was in thein the range range of ofTEM 5–10 (HRTEM)nm. The lattice images fringe of ZnO-NPs, spacings ofrespective 0.28 andly. 0.25 The nm size observed of ZnO-NPs in HRTEM was inimage the range are 5–10of 5–10 nm.
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