Surface-Controlled Conversion of Ammonia Borane from Boron Nitride
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Boron Nitride Substrates for High-Quality Graphene Electronics C
LETTERS PUBLISHED ONLINE: 22 AUGUST 2010 | DOI: 10.1038/NNANO.2010.172 Boron nitride substrates for high-quality graphene electronics C. R. Dean1,2*,A.F.Young3,I.Meric1,C.Lee4,5,L.Wang2,S.Sorgenfrei1,K.Watanabe6,T.Taniguchi6, P. Kim 3,K.L.Shepard1 and J. Hone2* Graphene devices on standard SiO2 substrates are highly disor- atomically planar surface should suppress rippling in graphene, dered, exhibiting characteristics that are far inferior to the which has been shown to mechanically conform to both corrugated expected intrinsic properties of graphene1–12. Although suspend- and flat substrates9,21. The dielectric properties of h-BN (e ≈ 3–4 ≈ 21 ing the graphene above the substrate leads to a substantial and Vbreakdown 0.7 V nm ) compare favourably with those of 13,14 improvement in device quality ,thisgeometryimposes SiO2, allowing the use of h-BN as an alternative gate dielectric with severe limitations on device architecture and functionality. no loss of functionality22. Moreover, the surface optical phonon There is a growing need, therefore, to identify dielectrics that modes of h-BN have energies two times larger than similar modes allow a substrate-supported geometry while retaining the in SiO2, suggesting the possibility of an improved high-temperature quality achieved with a suspended sample. Hexagonal boron and high-electric-field performance of h-BN based graphene devices nitride (h-BN) is an appealing substrate, because it has an atom- over those using typical oxide/ graphene stacks23,24. ically smooth surface that is relatively free of dangling bonds and To fabricate graphene-on-BN, we used a mechanical transfer charge traps. -
Optimization of Wear Loss in Silicon Nitride (Si3n4)–Hexagonal Boron Nitride (Hbn) Composite Using Doe–Taguchi Method
Ghalme et al. SpringerPlus (2016) 5:1671 DOI 10.1186/s40064-016-3379-7 CASE STUDY Open Access Optimization of wear loss in silicon nitride (Si3N4)–hexagonal boron nitride (hBN) composite using DoE–Taguchi method Sachin Ghalme1,2*, Ankush Mankar3 and Y. J. Bhalerao4 *Correspondence: [email protected] Abstract 2 Mechanical Engineering Introduction: The contacting surfaces subjected to progressive loss of material Department, Manoharbhai Patel Institute of Engineering known as ‘wear,’ which is unavoidable between contacting surfaces. Similar kind of and Technology, Gondia, phenomenon observed in the human body in various joints where sliding/rolling Maharashtra, India contact takes place in contacting parts, leading to loss of material. This is a serious issue Full list of author information is available at the end of the related to replaced joint or artificial joint. article Case description: Out of the various material combinations proposed for artificial joint or joint replacement Si3N4 against Al2O3 is one of in ceramic on ceramic category. Minimizing the wear loss of Si3N4 is a prime requirement to avoid aseptic loosening of artificial joint and extending life of joint. Discussion and evaluation: In this paper, an attempt has been made to investigate the wear loss behavior of Si3N4–hBN composite and evaluate the effect of hBN addition in Si3N4 to minimize the wear loss. DoE–Taguchi technique is used to plan and analyze experiments. Conclusion: Analysis of experimental results proposes 15 N load and 8 % of hBN addi- tion in Si3N4 is optimum to minimize wear loss against alumina. Keywords: Silicon nitride (Si3N4), Hexagonal boron nitride (hBN), Alumina (Al2O3), Design of experiment (DoE), Taguchi technique Background Mechanical behavior of various machine elements, such as gears, cams, wheels, rails and sealing parts are influenced by the interaction between contact elements and surfaces. -
Catalysis and Chemical Engineering February 19-21, 2018
Scientific UNITED Group 2nd International Conference on Catalysis and Chemical Engineering February 19-21, 2018 Venue Paris Marriott Charles de Gaulle Airport Hotel 5 Allee du Verger, Zone Hoteliere Roissy en France, 95700 France Exhibitors Supporting Sponsor Publishing Partner Supporter Index Keynote Presentations .......06 - 13 Speaker Presentations .......14 - 100 Poster Presentations .......102 - 123 About Organizer .......124 - 125 Key Concepts → Catalytic Materials & Mechanisms → Catalysis for Chemical Synthesis → Catalysis and Energy → Nanocatalysis → Material Sciences → Electrocatalysis → Environmental Catalysis → Chemical Kinetics → Reaction Engineering → Surface and Colloidal Phenomena → Enzymes and Biocatalysts → Photocatalysis → Nanochemistry → Polymer Engineering → Fluid Dynamics & its Phenomena → Simulation & Modeling → Catalysis for Renewable Sources → Organometallics Chemistry → Catalysis and Zeolites → Catalysis in Industry → Catalysis and Pyrolysis February 19 1Monday Keynote Presentations The Development of Phosphorus- and Carbon-Based Photocatalysts Jimmy C Yu The Chinese University of Hong Kong, Hong Kong Abstract This presentation describes the recent progress in the design and fabrication of phosphorus- and carbon-based photocatalysts. Phosphorus is one of the most abundant elements on earth. My research group discovered in 2012 that elemental red phosphorus could be used for the generation of hydrogen from photocatalytic water splitting. Subsequent studies show that the activity of red-P can be greatly improved by structural modification. Among the phosphorus compounds, the most stable form is phosphate. Its photocatalytic property was reported decades ago. Phosphides have also attracted attention as they can replace platinum as an effective co-catalyst. In terms of environmental friendliness, carbon is even more attractive than phosphorus. In 2017, we found that carbohydrates in biomass can be converted to semi conductive hydrothermal carbonation carbon (HTCC). -
Ceramic Carbides: the Tough Guys of the Materials World
Ceramic Carbides: The Tough Guys of the Materials World by Paul Everitt and Ian Doggett, Technical Specialists, Goodfellow Ceramic and Glass Division c/o Goodfellow Corporation, Coraopolis, Pa. Silicon carbide (SiC) and boron carbide (B4C) are among the world’s hardest known materials and are used in a variety of demanding industrial applications, from blasting-equipment nozzles to space-based mirrors. But there is more to these “tough guys” of the materials world than hardness alone—these two ceramic carbides have a profile of properties that are valued in a wide range of applications and are worthy of consideration for new research and product design projects. Silicon Carbide Use of this high-density, high-strength material has evolved from mainly high-temperature applications to a host of engineering applications. Silicon carbide is characterized by: • High thermal conductivity • Low thermal expansion coefficient • Outstanding thermal shock resistance • Extreme hardness FIGURE 1: • Semiconductor properties Typical properties of silicon carbide • A refractive index greater than diamond (hot-pressed sheet) Chemical Resistance Although many people are familiar with the Acids, concentrated Good Acids, dilute Good general attributes of this advanced ceramic Alkalis Good-Poor (see Figure 1), an important and frequently Halogens Good-Poor overlooked consideration is that the properties Metals Fair of silicon carbide can be altered by varying the Electrical Properties final compaction method. These alterations can Dielectric constant 40 provide knowledgeable engineers with small Volume resistivity at 25°C (Ohm-cm) 103-105 adjustments in performance that can potentially make a significant difference in the functionality Mechanical Properties of a finished component. -
High-Quality Graphene and Hexagonal- Boron Nitride Transfers on Sio2
High-Quality Graphene and Hexagonal- Boron Nitride Transfers on SiO2 1 MELISSA HUYNH CHEMICAL ENGINEERING DEPARTMENT OF OREGON STATE UNIVERSITY DR. JUN JIAO, LESTER LAMPERT REU - PORTLAND STATE UNIVERSITY Overview 2 Importance High- Results and Quality Methodology Interpretation Graphene & HBN Raman Analysis Overview 3 Importance High- Results and Quality Methodology Interpretation Graphene & HBN Raman Analysis 2D Materials 4 Graphene Zero overlap semimetal Durable Heat and electricity conductivity Hexagonal-Boron Nitride Similar properties to graphene Future Application 5 Biological engineering Optical Electronics Composite materials Super Capacitors/ Energy Storage Overview 6 Importance High- Results and Quality Methodology Interpretation Graphene & HBN Raman Analysis Growth 7 Chemical Vapor Deposition (CVD) Copper catalyst Vertical growth with furnace Methane, hydrogen, argon gases Transfer of Graphene 8 PMMA spin coat Ammonium Persulfate (APS) Rinse Heat Acetone bath Transfer of HBN 9 Copper foil APS Corral Pumps Polymer-Free Approach 10 Similar to H-BN Outflow: APS Inflow: DI H2O and Isopropyl Alcohol Overview 11 Importance High- Results and Quality Methodology Interpretation Graphene & HBN Raman Analysis Graphene Spectrum 12 D band G band D/g 2D Band 2D/G Ideal Spectrum HBN spectrum 13 1300-1400 range Weak readings Carbon contamination Ideal Spectrum Overview 14 Importance High- Results and Quality Methodology Interpretation Graphene & HBN Raman Analysis Graphene Analysis Grown at 830 ̊ C [edge] -
Production of Boron Nitride Using Chemical Vapor Deposition Method a Thesis Submitted to the Graduate School of Nature
PRODUCTION OF BORON NITRIDE USING CHEMICAL VAPOR DEPOSITION METHOD A THESIS SUBMITTED TO THE GRADUATE SCHOOL OF NATURE AND APPLIED SCIENCES OF MIDDLE EAST TECHNICAL UNIVERSITY BY ÖZGE MERCAN IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF MASTER OF SCIENCE IN CHEMICAL ENGINEERING FEBRUARY 2014 Approval of the thesis: PRODUCTION OF BORON NITRIDE USING CHEMICAL VAPOR DEPOSITION METHOD submitted by ÖZGE MERCAN in partial fulfillment of the requirements for the degree of Master of Science in Chemical Engineering Department, Middle East Technical University by, Prof. Dr. Canan Özgen Dean, Graduate School of Natural and Applied Sciences Prof. Dr. Halil Kalıpçılar Head of Department, Chemical Engineering, Prof. Dr. H. Önder Özbelge Supervisor, Chemical Engineering Dept, Assoc. Prof. Dr. Naime Aslı Sezgi Co-supervisor, Chemical Engineering Dept, Examining Committee Members Prof. Dr. Hayrettin Yücel Chemical Engineering Department, METU Prof. Dr. H. Önder Özbelge Chemical Engineering Department, METU Prof. Dr. Nail Yaşyerli Chemical Engineering Department, Gazi Unv. Prof. Dr. Halil Kalıpçılar Chemical Engineering Department, METU Yard. Doç. Dr. Zeynep Çulfaz Emecen Chemical Engineering Department, METU Date : I hereby declare that all information in this document has been obtained and presented in accordance with academic rules, and ethical conduct. I also declare that, as required by these rules and conduct, I have fully cited and referenced all material and results that are not original to this work. Name, Last Name : ÖZGE MERCAN Signature : iv ABSTRACT PRODUCTION OF BORON NITRIDE USING CHEMICAL VAPOR DEPOSITION METHOD Mercan, Özge Master of Science, Department of Chemical Engineering Supervisor : Prof. Dr. H. Önder Özbelge Co-Supervisor: Assoc. -
Metallated Derivatives of Ammonia Borane with a View to Their Potential As Hydrogen Storage Materials
Metallated Derivatives of Ammonia Borane with a view to their potential as Hydrogen Storage Materials by Ian C. Evans Supervisor: Dr Paul A. Anderson A thesis submitted to the University of Birmingham for the Degree of Doctor of Philosophy The School of Chemistry College of Engineering and Physical Sciences The University of Birmingham February 2011 University of Birmingham Research Archive e-theses repository This unpublished thesis/dissertation is copyright of the author and/or third parties. The intellectual property rights of the author or third parties in respect of this work are as defined by The Copyright Designs and Patents Act 1988 or as modified by any successor legislation. Any use made of information contained in this thesis/dissertation must be in accordance with that legislation and must be properly acknowledged. Further distribution or reproduction in any format is prohibited without the permission of the copyright holder. Abstract Ammonia borane, NH3BH3, has attracted growing interest in recent years in the field of hydrogen storage due to its high gravimetric hydrogen content. In this study the reaction of NH3BH3 with various metal hydrides was investigated. The reactions with hydrides of lithium and sodium required a molar ratio of 1:2 in favour of NH3BH3 and + − the reaction products were characterised as [Li(NH3)] [BH3NH2BH3] and + − 11 23 [Na] [BH3NH2BH3] , respectively, through solid state B and Na MAS NMR and Raman spectroscopy. The reaction of CaH2 with NH3BH3 required a reaction stoichiometry of 1:4 and this reaction proceeded through a different reaction mechanism, forming Ca(BH4)2·2NH3. The crystal structures of Ca(BH4)2·2NH3 and Ca(BH4)2·NH3 were determined by powder diffraction methods and the reaction pathway investigated through solid state 11B MAS NMR spectroscopy. -
Recent Developments on Hydrogen Release from Ammonia Borane
6 Recent Developments on Hydrogen Release from Ammonia Borane Our group and others have been interested in chemical hydrogen storage materials that use the elements nitrogen and boron to chemically bind hydrogen. In these chemical hydrogen storage materials, hydrogen is ‘discharged’ by a chemical reaction and the hydrogen is ‘recharged’ by a chemical processing pathway. This makes them unique compared to metal hydride materials or carbon sorbent materials where the hydrogen release and uptake is controlled by temperature and pressure. One compound in particular, Dr. Abhi Karkamkar, Dr. Chris Aardahl, and Dr. Tom Autrey ammonia borane (AB = NH3BH3) has received significant Pacific Northwest National Laboratory interest given its stability and commercial availability. Ammonia borane, isoelectronic with ethane, is a solid at Introduction room temperature, stable in air and water and contains 190 g/kg (100–140 g/L) hydrogen. Figure 1 shows that if Record crude oil prices combined with public interest in energy a large portion of the hydrogen can be liberated, AB has a security have resulted in increased attention to a potential higher gravimetric density than most other reported chemical transportation economy based on hydrogen fuel. One of systems. This capacity coupled with stability has resulted in the greatest challenges is the discovery and development of renewed interest in studying ammonia borane as a hydrogen materials and compounds capable of storing enough hydrogen Ammonia Borane storage material. While the material would not be regenerated on-board to enable a 300-mile range without adding significant “on-board” it could potentially meet many DOE targets. Dehydrogenation Dehydrogenation of weight or volume to today’s conventional automobile. -
High-Pressure Phase and Transition Phenomena in Ammonia Borane NH3BH3 from X-Ray Diffraction, Landau Theory, and Ab Initio Calculations
High-pressure phase and transition phenomena in ammonia borane NH3BH3 from X-ray diffraction, Landau theory, and ab initio calculations Yaroslav Filinchuk,1* Andriy H. Nevidomskyy,2 Dmitry Chernyshov,1 and Vladimir Dmitriev1 1 Swiss-Norwegian Beam Lines, European Synchrotron Radiation Facility, 6 rue Jules Horowitz, BP-220, 38043 Grenoble, France, 2 Department of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ 08854, USA Abstract Structural evolution of a prospective hydrogen storage material, ammonia borane NH3BH3, has been studied at high pressures up to 12 GPa and at low temperatures by synchrotron powder diffraction. At 293 K and above 1.1 GPa a disordered I4mm structure reversibly transforms into a new ordered phase. Its Cmc21 structure was solved from the diffraction data, the positions of N and B atoms and the orientation of NH3 and BH3 groups were finally assigned with the help of density functional theory calculations. Group-theoretical analysis identifies a single two- component order parameter, combining ordering and atomic displacement mechanisms, which link an orientationally disordered parent phase I4mm with ordered distorted Cmc21, Pmn21 and P21 structures. We propose a generic phase diagram for NH3BH3, mapping three experimentally found and one predicted (P21) phases as a function of temperature and pressure, along with the evolution of the corresponding structural distortions. Ammonia borane belongs to the class of improper ferroelastics and we show that both temperature- and pressure-induced phase transitions can be driven to be of the second order. The role of N-H…H-B dihydrogen bonds and other intermolecular interactions in the stability of NH3BH3 polymorphs is examined. -
Ammonia-Borane: a Promising Material for Hydrogen Storage
0 1) Background BES021 Ammonia-Borane: a Promising Material for Hydrogen Storage H3NBH3 H2 + (H2NBH2)n H2 + (HNBH)n H2 + BN 6.5 wt% H 13.1 wt% 19.6 wt% • High storage capacity has drawn attention to hydrogen release methods and mechanisms: – Catalyzed hydrolysis – Solid thermolysis – Catalyzed solid thermolysis - Solution thermolysis in ethers and ionic liquids - Catalyzed solution thermolysis Cf. A. Staubitz et al. Chem. Rev. 2010, 110, 4079-4124. This presentation does not contain any proprietary or confidential information 2) Base-Promoted AB dehydrogenation Enhanced AB H2-Release with Proton Sponge in Ionic Liquids or Tetraglyme with Reduced Foaming o NH3BH3 + 5 mol % PS at 85 C in Ionic Liquids or Tetraglyme (250 mg) (91 mg) (250 mg) 5.60 mat. wt. % H2 pKa = 11.1 Himmelberger, D.; Yoon, C. W.; Bluhm, M. E.; Carroll, P. J.; Sneddon, L. G. J. Am. Chem. Soc. 2009, 131, 14101. Proton Sponge Increases Release Rate of Second Equivalent of H2 from AB 2nd Equiv. AB with 5 mol% PS in bmimCl at 85°C Proton Sponge Induces Loss of a Second H2- Equivalent from Thermally Dehydrogenated AB − Model Studies: AB/[Et3BNH2BH3] Reactions Show Chain Growth -H • • + − 2 - NH3BH3+ Li BEt3H Et3BNH2BH3 -H2 − NH BH [Et3BNH2BH2NH2BH3] 3 3 Mass spec and GIAO/NMR studies indicate chain growth • - X-ray structure Et3BNH2BH3 0h • 11B{1H} NMR AB • 67h • AB ★ -19.7 (q) ★ -11.0 (t) -6.1(s) DFT optimized structure of ★ − [Et3BNH2BH2NH2BH3] GIAO calculated 11B chem. shifts: -8.2, -12.0, -23.5 ppm Verkade’s Base Also Activates AB H2-Release 50 wt% bmimCl 2 Verkade’s Base of H Equiv. -
Acronyms and Abbreviations, Excerpt from DOE Hydrogen Program 2006
XI. Acronyms and Abbreviations °C Degrees Celsius ACR Autothermal cyclic reforming °F Degrees Fahrenheit ACS American Chemical Society 1-D, 1D One-dimensional AC-Transit Alameda Contra Costa Transit 2-D, 2D Two-dimensional AE Alkaline earth 3-D, 3D Three-dimensional AEET Alternative Energy Engineering 1Q First quarter of the fiscal year Technician 2Q Second quarter of the fiscal year AEO Annual Energy Outlook 3Q Third quarter of the fiscal year AES Auger electron spectroscopy 4Q Fourth quarter of the fiscal year AFM Atomic force microscopy 6F Hexafluorinated (biphenol A) sulfonated Ag Silver poly(arylene ether sulfone) AgCl Silver chloride 6FCN-x HexaFluoro bisphenol A based AHCHG Ad Hoc Committee for Hydrogen Gas disulfonated polybenzonitirle (H+ form) AIBN Azobisisobutyl nitrile (x denotes degree of sulfonation) AIChE American Institute of Chemical 6F-x HexaFluoro bisphenol A based Engineers disulfonated polySulfone (H+ form) AirCred Air Quality Credits calculation software (x denotes degree of sulfonation) tool developed by ANL ∆H Enthalpy; heat of reaction AK Alkali ∆H° Standard heat of formation f Al Aluminum ∆P Pressure drop, pressure change AlCl3 Aluminum chloride λ Lambda, hydration number ALD Atomic layer deposition µA Micro ampere(s) AlH3 Aluminum hydride; alane µA/cm2 Micro ampere(s) per square centimeter Al2O3 Aluminum oxide µg Microgram(s) Alt-G1 Alternative dendron generation-one µm Micrometer(s); micron(s) AM Air mass µM Micromolar AM 1.5 Air Mass 1.5 solar illumination µmol Micromole(s) ANL Argonne National Laboratory µΩ-cm2 Micro-ohm(s) - square centimeter ANS American Nuclear Society µV Micro volt(s) ANSI American National Standards Institute Ω Ohm(s) ANT Albany Nano Tech, SUNY Ω-cm2 Ohm-square centimeter APCI, APCi Air Products and Chemicals, Inc. -
Ammonia-Boron Trifluoride, NH3BF3, and ND3BF3
Mem. Fac. Educ., Shimane Univ. (Nat. Sci.), Vol. 10. pp. 29 34. December 1976. An ESR Study of Radicals Produced in 7'-Irradiated Ammonia-Boron Trifluoride, NH3BF3, and ND3BF3 Kunihisa SOGABE* Abstract : ESR spectra of radicals produced in ammonia-boron trifluoride, NH3BF3, and ND8BF8 subjected to r-irradiated at 77 K were observed. From analyses of these spectra, the radicals were identified as a BF3-0r a NH8BF3-and a ・NHBF2. The latter radical is mterpreted to be prepared by a loss of a hydrogen from NH2BF2, which was produced by the decomposition of the NH3BF8・ ESR parameters of the ・NHBF2 radical were aF=26 G, aB=36G, aN=260 G, and aH=41 G, respectively. These results show that a dative bond of the NH3BF3 differs from that of the NH8BH3 in the bond strengh, although both bonds are stronger than a P-B dative bond in phoshine-boranes under ?'-irradiation Introductiom that a radical produced by T-irradiation of diborane, B2H6, at 77 K was not BH3 radical Boron halides or boranes in which boron formed by a symmetrical cleavage of a B-B atorn is short of two electrons having complete bond but a 'B2H5 by an extraction of one of valence shell could produce many interesting two bridged hydrogens. Lovas and Johnson,9) addition products (adducts) with all molecules also, established that N-B bond in amino- containing an unshared electron pair. In par- fluoro borane, NH2BF2, produced during the ticular, ammonia-boron trifluoride (NH3BF3) gas phase reaction of NH3 and BF3 is fairly or ammonia-borane (NH3BH3) were recognized strong.