1988 DE88 013629 Applied Superconductfertty Uofiioffwico Sheraton-Pataca How San Francisco, CA August 21-25,190$
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CONF-880812— Absts. 1988 DE88 013629 Applied Superconductfertty UOfiiOffWiCO Sheraton-Pataca HoW San Francisco, CA August 21-25,190$ Sponsors Lawrence Livermore National Laboratory University of California Department of Energy Office of Fusion Energy and Division of High Energy Physics Bechtel National, Inc. Teledyne Wah Chang -dm Contents Conference Schedule iv P-3 Plenary HI Map of Conference Center v Materials 48 Session El SQUID Applications 48 P-1 Plenary I ML High Tc Superconductors: High-Speed Josephson Integrated Oxygen Ordering 49 Circuit Technology 1 LI Stability II 50 EA Superconducting Integrated Circuits .... 1 EJ 3 Terminal Devices/IC Processing II .... 51 MA NbTi Processing and Properties 4 MM High Tc Superconductors: LA SSC 5 Miscellaneous Properties 53 EB High Tc Superconductor Electronics I ... 6 LJ Fusion Ill/MHD II 55 MB NbTi: Measurements and AC Losses ... 7 EK High Tc Superconductor Electronics II... 56 LB Fusion I 8 MN High Tc Superconductors: EC Digital Applications 9 Critical Currents II 57 MC NbN, Nb3AI, and Nb3Sn 13 LK Medical Applications 57 LC Stability I 14 EL Particle and IR Detectors 58 MD High Tc Superconductors: MO High Tc Superconductors: Bulk Processing i 16 Characterization 60 ME High Tc Superconductors: LL Energy Storage, Generation, Measurements 17 and Switching 62 LD Fusion II/MHD I 18 MP Nb3Sn: Measurements 63 ED Miscellaneous High Tc MQ High Tc Superconductors: Superconductor Electronics 19 High-Frequency Responses 64 P-2 Plenary II P-4 Plenary IV SMES 26 CEBAF 66 EE Noise in SQUIDs 26 EM Millimeter Wave Technology II 66 MF NbN and Nb3AI 27 MR High Tc Superconductors: LE SMES I 29 Thin Films II 67 EF Millimeter Wave Technoiogy I 30 LM Conductor Testing 68 MG NbTi: AC Losses and Stability 32 EN Josephson Junction Dynamics 69 LF SSC II 34 MS High Tc Superconductors: EG Device Processing 35 Thin Films III 71 MH High Tc Superconductors: LN Magnet Technology 74 Critical Currents I 37 MT High Tc Superconductors: LG SMES II 38 Magnetic Properties and Applications ... 76 EH SQUIDs 38 MU High Tc Superconductors: Ml High Tc Superconductors: Thin Films IV 77 Bulk Properties I 41 LO CEBAF Magnets 78 LH Magnets for Physics 43 MV High Tc Superconductors: MJ Nb3Sn Processing and Properties 45 Bulk Properties II 78 MK High Tc Superconductors: Author index 82 Thin Films I 46 iii Conference Schedule 1 MONDAY AUGUST 17 TUESDAY AuGUST - WEDNESDAY TiuGUSig; • THURSDAY, AUGUST ?S 8:15-9:30 a.m. 8:15-9:30 a.m. 8:15-9:30 a.m. 8:15-9:30 a.m Plenary 1—Gold Ballroom Plenary II—Gold Ballroom Plenary III—Gold Ballroom Plenary IV—Gold Ballroom S. Hasuo W. Hassenzahl J. M. Rowell A. K. Chargin 9:30 a.m.—Coffee 9:30 a.m.—Coffee 9:30 a.m.—Coffee 9:30 a.m.—Coffee 9:45 a.m.-noon Oral 9:45 a.m.-noon Oral 9:45 a.m.-noon Oral 9:45 a.m.-noon Oral EA Superconducting Integrated EE Noise in SQUIDs EN El SQUID Applications C EM Millimeter Wave Circuits EN MF NbN and Nb3AI GB ML High Tc Superconductors: Technology II C MA NbTi Processing and L£ SMES 1 C Oxygen Ordering GB MR High Tc Superconductors: Properties GB LI Stability II EN Thin Films II GB LA SSC C LM Conductor Testing EN 9:45 a.m.-noon Poster 9:45 a.m.-noon Poster 9:45 a.m -noon Poster EF Millimeter Wave EJ 3 Terminal Oevices/IC EN Josephson Junction Technology 1 R Processing II R Dynamics R MG NbTi: AC Losse* and MM High Tc Superconductors: MS High Tc Superconductors: Stability R Miscellaneous Properties R Thin Films III R LF SSC II R LJ Fusion HI/MHO II R LN Magnet Technology R 12:00 noon—Luncheon ns 12:00 noon—Lunch 12:00 noon—Awards Luncheon RS 12:00 noon—Lunch 1:30-3.15 p.m. Oral 1:30-3:15 p.m. Oral 1:30-3:15 p.m. Oral 1:30-3:15 p.m. Oral EB High Tc Superconductor EG Device Processing EN EK High Tc Superconductor MT High Tc Superconductors: Electronics 1 GB MH High Tc Superconductors: Electronics II GB Magnetic Properties and MB NbTi: Measurements and Critical Currents I GB MN High Tc Superconductors: Applications EN AC Losses EN LG SMES II C Critical Currents II EN MU High Tc Superconductor*: LB Fusion 1 C LK Medical Applications C Thin Films IV GB LO CEBAF Magnets C 2 00-4:30 p.m. Poster 2:00-4:30 p.m. Poster 2:00-4:30 D.m. Poster EC Digital Applications R EH SQUIOs R EL Particle and IR Defectors R 2:00-4:30 p.m. Poster MC NbN, Nb3AI, and Nb,Sn R Ml High Tc Superconductors: MO High Tc Superconductors: MV High Tc Superconductors: LC Stability 1 R Bulk Properties 1 R Characterization R Bulk Properties II R LH Magnet* tor Physic* R LL Energy Storage, Generation, and Switching R 3:00-5:30 p.m. Oral 3:30-5:30 p.m. Oral 3:30-5:30 p.m. Dral MD High Tc Superconductors. W Nb3Sn Processing and MP NbjSn: Measurements EN Bulk Processing 1 GB Properties EN MQ High Tc Superconductors: ME High Tc Superconductors: MK High Tc Superconductors: High-Frequency Meeting Room Designation: Measurements EN Thin Films 1 GB Responses GB C = Comstock QC - Garden LD Fusion II/MHD 1 C EN - Emperor Court 7:00-10:00 p.m. Poster 6.00 p.m.—Cocktails RS Norton It = Rose ED Miscellaneous High Tc GB - Gold RS - Ralston Superconductor Electronics R 7:00 p.m.—Banquet GC Ballroom IV Sheraton-Palace Hotel inmr 065111 a ••a Loiias lounqe Sia'rwav •il -I- I Lobby Level Second Floor Session P-1 Plenary I High-Speed Josephson Integrated Circuit Technology 8:15-9:30 a.m., Monday, August 22, 1988 p-1 speed-digital circuits. Main topics are a high-uniformity Junction process, three-dimensional Integration technology, a 4- HIGH-SPEED JOSEPHSON IC TECHNOLOGY*, Shinya Hasuo, Mt microprocessor, and a single chip squid magnetometer- Fujitsu Laboratories Ltd. Atsugi, Fujutsi Limited - Performance Lastly, the author wilt make a comment on the expected of integrated circuits with Josephson junctions have been performance of the digital circuits with h1gh-Tc materials. dramatically improved since niobium junctions were available. Niobium Junctions, especially the Nb/Alo^/Nb junction, exhibit excellent characteristics, such as low leakage current, high •The present research effort Is part of the national research stability against thermal cycii/ig and long term storage, high and development program on "Scientific Computing System", controllability of the critical current, and high conducted under a program set by the Agency of Industrial reproducfbifity. These reliable characteristics encourage u* to Science and Technology, Ministry of International Trade and try making large scale Integrated (LSI) circuits. We are Industry. attempting to make ultra-fast Josephson computers. At present, we can operate a few thousands gate level LSIS. Compared with conventional semiconductor LSIS, the performances of the Josephson LSIS are outstanding in operating speed and power consumption. This is owing to the development of a reproducible and controllable Nb/Alo /Nb junction fabrication process. This Shinya Hasuo, Fujitsu Laboratories Ltd., 10-1, Korinosato- paper describes fabrication technology of niobium based Wakamfya, Atsugi, 243-01, Japan. integrated circuits and applications of the process to high Session EA Superconducting Integrated Circuits 9:45 a.m.-noon, Monday, August 22, 1988 EA-1 AM ALL-NbM TIME DOHXIM MEFLEtlUMHtll CHIP A 1fl-V JOSEPHSON VOLTAGE STANDARD* FUNCTIONAL ABOVE SK, S. ft. White ley, F. Kuo, H. Radparvar, and S, M. Faris, HYPRES, inc. - Josephson C. A. Mainillcii mid Franrrs L. Lloyd circuits fabricated in niobiua nitride technology can Naliimal Durmu of Siandnnls operate at temperatures approximately twice as high ElrftroinaRiirtir Technology Division as Josephson circuits fabricated fro* elemental JJnuldrr, CO R030S superconductors. This allows a Major simplification in cooling, based on relatively inexpensive two-stage closed-cycle refrigerators. A time domain reflecto- Introduction mcter circuit, previously demonstrated in niobium htiriiisM- vollngr ^landnrds arr liasrd on the far! iliat H .Invrjilisnn junriion in a mi- technology, has been adapted to the niobium nitride rrriuitvr fiild K«*nrra1rs ronitaiH vnltnRc strjis in its IV rurvr nt (lir vol(»grs nhf ;2r wlierr process. The circuit contains a step generator with ii if an iuteRir, f is tlir iiiirrowavi* frrtjnrtiry ami 2r !h lias a drliix-d valur. Early sltndanls a displayed rise time of 5 ps. To produce this tiscci | or 2 jtMirliuiiK (o grnrralrd r^frrenrr vollagrs of a frw millivolts, hillirlasi sfvrral circuit, the design must accommodate the higher pene- tration depth of NbM and the process must provide yrars 'arRc arrays «f 2(H)0 or morr Josrplisun junritniis liavr brrn usnl in many Inburalo- high quality Josephson devices and good uniformity. rirs to n;-iictntr rrfprfiico VHIURPS on lll^ order of \ V jl-4|. Tlirsr tlrvirrs ran lie ns«l Circuit operation at various temperatures has been l<i raliltrnir slamlard cv\h and other rcfrrrnrr drvirps al tlir ]-V Irvrl wiOioul the usr documented, and operation above 8K without perform- of n vollacr dividrr This lias rrsnlird in Milislatilinl iiiiprovrinrnt- in arrnrarv and has ance degradation is observed, although optimum bias grratly «ini|ililii*d Ihr <-prrntiim of J<rscjihs>.ii voltage stamiards. A series array of 1-101M) 20 levels change with temperature. Thick. MbH films are (H)() jnnriinns woulil extend ilir jnlirrriit simplicity and nrrurncy of a direr! raliliratinn !•> used in the process to suppress flux trapping and tlie Kl-V level rommntily used \u Zetier-diode referenc:1 staiuUrd-i.