Cadmium Zinc Telluride Detectors for a Next-Generation Hard X-Ray Telescope
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Progress in the Development of Cdte and Cdznte Semiconductor Radiation Detectors for Astrophysical and Medical Applications
Sensors 2009, 9, 3491-3526; doi:10.3390/s90503491 OPEN ACCESS sensors ISSN 1424-8220 www.mdpi.com/journal/sensors Review Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications Stefano Del Sordo 1,*, Leonardo Abbene 1,2,*, Ezio Caroli 3, Anna Maria Mancini 4, Andrea Zappettini 5 and Pietro Ubertini 6 1 INAF/IASF Palermo, Via Ugo La Malfa 153, 90146 Palermo, Italy 2 Dipartimento di Fisica e Tecnologie Relative, Università di Palermo,Viale delle Scienze, 90128 Palermo, Italy 3 INAF/IASF Bologna, Via Gobetti 101, 40129 Bologna, Italy; E-Mail: [email protected] (E.C.) 4 Dipartimento di Ingegneria dell’Innovazione, Università del Salento, Via Arnesano, 73100 Lecce, Italy; E-Mail: [email protected] (A.M.M.) 5 IMEM-CNR, Parco Area delle Scienze 37/A, 43100 Parma, Italy; E-Mail: [email protected] (A.Z.) 6 INAF/IASF Roma, Via del Fosso del Cavaliere 100, 00133 Roma, Italy; E-Mail: [email protected] (P.U.) * Authors to whom correspondence should be addressed; E-Mails: [email protected]; (S.D.S.); [email protected] (L.A.); Tel. +39-091-6809563; Fax: +39-091-6882258 (S.D.S.); Tel. +39-091-6615053; Fax: +39-091-6615063 (L.A.) Received: 26 March 2009; in revised form: 5 May 2009 / Accepted: 8 May 2009 / Published: 12 May 2009 Abstract: Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. -
Two Cadmium Zinc Telluride (CZT) Semiconductor Detectors, a Lacl3(Ce) Scintillator, and an Nai(Tl) Scintillator
Performance comparison of four compact room- temperature detectors – two cadmium zinc telluride (CZT) semiconductor detectors, a LaCl3(Ce) scintillator, and an NaI(Tl) scintillator John K. Hartwell, Member IEEE, Robert J. Gehrke, and Michael E. Mc Ilwain measurement scenarios where portability, compact design, Abstract— The performance characteristics of four compact, and freedom from cryogenics are primary considerations. room-temperature detectors – two scintillators and two A recent publication provided performance comparison semiconductor detectors – were studied. All are commercially- data on three detectors including a ∅10 cm X 10 cm NaI(Tl), available detectors. The two scintillators were a ∅13 mm X a ∅55 mm X 54 mm HPGe detector, and a ∅9 mm X 2 mm 13 mm lanthanum chloride [LaCl3(Ce)] detector and a ∅25 mm X 25 mm sodium iodide [NaI(Tl)] detector. The two CdTe detector [1]. Our work, reported in this paper, provides semiconductor detectors were a 10 mm X 10 mm X 3 mm complimentary assessment data on a different suite of four cadmium zinc telluride (CZT) detector with a coplanar gridded highly portable detectors, including work with the promising anode and a 5 mm X 5 mm X 5 mm CZT detector with an new scintillator LaCl3(Ce). extended cathode. The efficiency, resolution, and peak shape of these devices are compared. Since LaCl (Ce) is a relatively new 3 II. EXPERIMENTAL METHOD commercial scintillator material, additional information on the performance of this detector is presented. Specifically, the The electronics system used for these evaluations consisted impact of naturally-occurring radioactive 138La and additional of a preamplifier, a linear amplifier (Tennelec TC244 or Ortec contamination from alpha-emitting radionuclides on the 460), and an multichannel analyzer (Amptek MCA8000A) background measured with this detector are discussed. -
Characterization of Cadmium Zinc Telluride Solar Cells by RF Sputtering Senthilnathan Subramanian University of South Florida
University of South Florida Scholar Commons Graduate Theses and Dissertations Graduate School 6-24-2004 Characterization of Cadmium Zinc Telluride Solar Cells by RF Sputtering Senthilnathan Subramanian University of South Florida Follow this and additional works at: https://scholarcommons.usf.edu/etd Part of the American Studies Commons Scholar Commons Citation Subramanian, Senthilnathan, "Characterization of Cadmium Zinc Telluride Solar Cells by RF Sputtering" (2004). Graduate Theses and Dissertations. https://scholarcommons.usf.edu/etd/1261 This Thesis is brought to you for free and open access by the Graduate School at Scholar Commons. It has been accepted for inclusion in Graduate Theses and Dissertations by an authorized administrator of Scholar Commons. For more information, please contact [email protected]. Characterization of Cadmium Zinc Telluride Solar Cells by RF Sputtering by Senthilnathan Subramanian A thesis submitted in partial fulfillment of the requirements for the degree of Master of Science in Electrical Engineering Department of Electrical Engineering College of Engineering University of South Florida Major Professor: Christos S. Ferekides, Ph.D. Don L. Morel, Ph.D. Yun L. Choiu, Ph.D Date of Approval: June 29, 2004 Keywords: czt, thin films, wide bandgap semiconductors, tandem solar cells © Copyright 2004 , Senthilnathan Subramanian DEDICATION This thesis is dedicated to my family and friends for their love and support. ACKNOWLEDGEMENT I would like to express my gratitude to my Major Professor Dr. Chris Ferekides for his invaluable guidance and support during the course of this work. He has been a great source of inspiration during my work here. I also thank Dr.Don L. Morel and Dr. -
Research Progress on Ultra-Precision Machining Technologies for Soft-Brittle Crystal Materials
Front. Mech. Eng. 2017, 12(1): 77–88 DOI 10.1007/s11465-017-0411-8 REVIEW ARTICLE Hang GAO, Xu WANG, Dongming GUO, Yuchuan CHEN Research progress on ultra-precision machining technologies for soft-brittle crystal materials © The Author(s) 2017. This article is published with open access at link.springer.com and journal.hep.com.cn 2017 Abstract Soft-brittle crystal materials are widely used in Mercury cadmium telluride (HgCdTe, MCT) single crystal many fields, especially optics and microelectronics. is the most significant material for infrared optoelectronic However, these materials are difficult to machine through devices and MCT-based high performance infrared traditional machining methods because of their brittle, soft, devices, and is widely used in the fields of aeronautics and anisotropic nature. In this article, the characteristics and astronautics [4]. Cadmium zinc telluride (CdZnTe, and machining difficulties of soft-brittle and crystals are CZT) single crystal is the most promising material for the presented. Moreover, the latest research progress of novel fabrication of room temperature radiation detectors [5,6] machining technologies and their applications for soft- and is also widely used as the perfect substrates for brittle crystals are introduced by using some representative growing epitaxial layers of MCT crystal [7]. CaF2 single materials (e.g., potassium dihydrogen phosphate (KDP), crystal is extensively applied in deep ultraviolet photo- cadmium zinc telluride (CZT)) as examples. This article lithography, solid-state lasers, and high-energy radiation reviews the research progress of soft-brittle crystals detection [8]. BaF2 single crystal with high transparency processing. for infrared and visible light is often used in CO2 laser hatch and infrared optical systems [9]. -
Fabrication of Small-Pixel Cdznte Sensors and Characterization with X-Rays
sensors Article Fabrication of Small-Pixel CdZnTe Sensors and Characterization with X-rays Stergios Tsigaridas 1,∗,† , Silvia Zanettini 2 , Manuele Bettelli 3 , Nicola Sarzi Amadè 3 , Davide Calestani 3 , Cyril Ponchut 1 and Andrea Zappettini 3 1 European Synchrotron Radiation Facility (ESRF), 71 Avenue des Martyrs, F-38043 Grenoble, France; [email protected] 2 Due2lab s.r.l., via Paolo Borsellino 2, 42019 Scandiano, Italy; [email protected] 3 IMEM-CNR, Istituto Materiali per l’Elettronica e il Magnetismo, Consiglio Nazionale delle Ricerche, Parco Area delle Scienze 37/A, 43124 Parma, Italy; [email protected] (M.B.); [email protected] (N.S.A.); [email protected] (D.C.); [email protected] (A.Z.) * Correspondence: [email protected] † Current address: TRIUMF, 4004 Wesbrook Mall, Vancouver, BC V6T 2A3, Canada. Abstract: Over the past few years, sensors made from high-Z compound semiconductors have attracted quite some attention for use in applications which require the direct detection of X-rays in the energy range 30–100 keV. One of the candidate materials with promising properties is cadmium zinc telluride (CdZnTe). In the context of this article, we have developed pixelated sensors from CdZnTe crystals grown by Boron oxide encapsulated vertical Bridgman technique. We demonstrate the successful fabrication of CdZnTe pixel sensors with a fine pitch of 55 µm and thickness of 1 mm and 2 mm. The sensors were bonded on Timepix readout chips to evaluate their response to X-rays Citation: Tsigaridas, S.; Zanettini, S.; provided by conventional sources. Despite the issues related to single-chip fabrication procedure, Bettelli, M.; Sarzi Amadè, N.; reasonable uniformity was achieved along with low leakage current values at room temperature. -
Ge–Sb–S–Se–Te Amorphous Chalcogenide Thin Films Towards On
www.nature.com/scientificreports OPEN Ge–Sb–S–Se–Te amorphous chalcogenide thin flms towards on- chip nonlinear photonic devices J.-B. Dory 1, C. Castro-Chavarria1, A. Verdy 1, J.-B. Jager2, M. Bernard1, C. Sabbione1, M. Tessaire1, J.-M. Fédéli1, A. Coillet 3, B. Cluzel3 & P. Noé 1* Thanks to their unique optical properties Ge–Sb–S–Se–Te amorphous chalcogenide materials and compounds ofer tremendous opportunities of applications, in particular in near and mid-infrared range. This spectral range is for instance of high interest for photonics or optical sensors. Using co-sputtering technique of chalcogenide compound targets in a 200 mm industrial deposition tool, we show how by modifying the amorphous structure of GeSbwSxSeyTez chalcogenide thin flms one can signifcantly tailor their linear and nonlinear optical properties. Modelling of spectroscopic ellipsometry data collected on the as-deposited chalcogenide thin flms is used to evaluate their linear and nonlinear properties. Moreover, Raman and Fourier-transform infrared spectroscopies permitted to get a description of their amorphous structure. For the purpose of applications, their thermal stability upon annealing is also evaluated. We demonstrate that depending on the GeSbwSxSeyTez flm composition a trade-of between a high transparency in near- or mid-infrared ranges, strong nonlinearity and good thermal stability can be found in order to use such materials for applications compatible with the standard CMOS integration processes of microelectronics and photonics. Chalcogenides are commonly defned as non-oxide compounds containing at least one chalcogen element such as S, Se and/or Te (belonging to group 16 of O) alloyed with electropositive elements (more ofen elements of group 15 (As, Sb, Bi) and/or group 14 (Si, Ge, Sn, Pb)). -
Cd,-,Zn,Te Materials
Source of Acquisition NASA Goddard Space Flight Center Temperature Evolution of Excitonic Absorptions in Cd,-,Zn,Te Materials Manuel A. Quijada and Ross Henry Goddard Space Flight Center, Code 551, Greenbelt, MD 20771, USA ABSTRACT The studies consist of measuring the frequency dependent transmittance (T) and reflectance (R) above and below the optical band-gap in the W/Visible and infrared frequency ranges for Cdl-,Zn,Te materials for x=O and XI-0.04. Measurements were also done in the temperature range from 5 to 300 K. The results show that the optical gap near 1.49 eV at 300 K increases to 1.62 eV at 5 K. Finally, we observe sharp absorption peaks near this gap energy at low temperatures. The close proximity of these peaks to the optical transition threshold suggests that they originate from the creation of bound electron-hole pairs or excitons. The decay of these excitonic absorptions may contribute to a photoluminescence and transient background response of these back-illuminated HgCdTe CCD detectors. Keywords: Keywords: CdZnTe, UV/Vis infrared, transmittance, reflectance, semiconducting gap, photolumi- nescence, exciton 1. INTRODUCTION The ternary compound Cdl-,Zn,Te (CdZnTe) is a semiconducting alloy that is widely used as a base material for x-ray and infrared detectors. In particular, single crystals of CdZnTe wafers are the principal material on which HgCdTe epitaxial layers have been recently grown for the fabrication of infrared sensors on lattice matched CdZnTe substrate.l This has been possible due to recent advances through use of new detector growth technologies2 which involve p/n double layer planar heterostructure arrays grown by Molecular Beam Epitaxy (MBE). -
Obtaining Nano Structures of Cobalt Telluride by a Simplified Ion Exchange Reaction at Aqueous Solution
Chalcogenide Letters Vol. 16, No. 2, February 2019, p. 57 - 61 OBTAINING NANO STRUCTURES OF COBALT TELLURIDE BY A SIMPLIFIED ION EXCHANGE REACTION AT AQUEOUS SOLUTION O. ARELLANO-TÁNORIa,*, E. CHÁVEZ-MENDIOLAb,c,d, R. GÁMEZ-CORRALESe, X. M. GARCÍA-CRUZd, K. APODACA-IBARRAa, S. J. CASTILLOb aDepartamento de Ingeniería Industrial, Tecnológico Nacional de México/I. T. Hermosillo, Ave. Tecnológico y Periférico Poniente, S/N, C.P.83170, Col. Sahuaro, Hermosillo, Sonora, México bDepartamento de Investigación en Física, Universidad de Sonora, Apdo. Postal 5-088, CP. 83000, Hermosillo, Sonora, México cCarrera de Ingeniería Mecatrónica, Universidad Tecnológica de Hermosillo, C.P. 83299, Parque Industrial, Hermosillo, Sonora, México dDepartamento de Metal-Mecánica, Tecnológico Nacional de México/I. T. Hermosillo, Av. Tecnológico y Periférico Poniente, S/N, C.P. 83170, Col. Sahuaro, Hermosillo Sonora, México eDepartamento de Física, Universidad de Sonora, Blvd. Luis Encinas y Rosales S/N, CP. 83000, Hermosillo, Sonora, México How to obtain cobalt telluride through a versatile method, based on an ion exchange by aqueous chemical reaction, conformer by rongalite, sodium hydroxide and cobalt chloride. In the UV-vis characterization, a direct and indirect band gap interval of 2.32 eV and 2.04 eV was determined. In the optical absorption, two peaks are observed, one at 270 nm and 411 nm, wich correspond to this material. The FTIR study for cobalt telluride, absorption peaks are seen at 828 cm-1 corresponding to the O-Te group, while the peak of 621 cm -1 can be attributed to Te-O and finally the peak at 524 cm-1 corresponds to the vibration of Co-O links. -
Photoluminescence Study of Cadmium Zinc Telluride
Graduate Theses, Dissertations, and Problem Reports 2001 Photoluminescence study of cadmium zinc telluride Swati Jain West Virginia University Follow this and additional works at: https://researchrepository.wvu.edu/etd Recommended Citation Jain, Swati, "Photoluminescence study of cadmium zinc telluride" (2001). Graduate Theses, Dissertations, and Problem Reports. 1252. https://researchrepository.wvu.edu/etd/1252 This Thesis is protected by copyright and/or related rights. It has been brought to you by the The Research Repository @ WVU with permission from the rights-holder(s). You are free to use this Thesis in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you must obtain permission from the rights-holder(s) directly, unless additional rights are indicated by a Creative Commons license in the record and/ or on the work itself. This Thesis has been accepted for inclusion in WVU Graduate Theses, Dissertations, and Problem Reports collection by an authorized administrator of The Research Repository @ WVU. For more information, please contact [email protected]. PHOTOLUMINESCENCE STUDY OF CADMIUM ZINC TELLURIDE Swati Jain Thesis submitted to the Eberly College of Arts and Sciences at West Virginia University in partial fulfillment of the requirements for the degree of Master of Science in Physics Nancy C. Giles, Ph.D., Chair Larry E. Halliburton, Ph.D. Mohindar S. Seehra, Ph.D. Department of Physics Morgantown, West Virginia 2001 Keywords: Photoluminescence, PL, CdZnTe, CZT, Cd1-xZnxTe ABSTRACT PHOTOLUMINESCENCE STUDY OF CADMIUM ZINC TELLURIDE SWATI JAIN In this thesis, I present a detailed study of Cd1-xZnxTe crystals with 0 ≤ x ≤ 0.14 using photoluminescence (PL) spectroscopy. -
Cadmium Telluride
CADMIUM TELLURIDE Section I Kurt J. Lesker Company Emergency Phone Numbers 1925 Worthington Avenue KJLC 800/245-1656 Clairton, PA 15025 Chemtrec 800/424-9300 Ph: 412/387-9200 Fax: 412/233-4275 Poison Center 800/562-8236 Chemical Name and Synonyms Date of Last Revision Cadmium Telluride, Cadmium Monotelluride 12/2/90 Formula Chemical Family Chemical Abstract No. CdTe metal telluride 1306-25-8 TSCA Calc. Molecular Wt. Listed in the EPA TSCA Inventory 240.0 Section II Hazardous Ingredients Hazardous Ingredients CAS # % TLV OSHA PEL Cadmium Telluride 1306-25-8 100 0.05mg/m3 200mg/m3 (as (as Cd) Cd) Reported Chemical Sara Title III 0.1mg/m3 (as Te) Section III Physical Data Boiling Point (0oC): 1121 Density (gmcc): 5.850 at 15 (6.2 at 15) Vapor Pressure: NA % Volatile by Volume: NA Reaction with Water: may react Evaporation Rate (H2O -1): NA exothermically Solubility in Water: Practically Melting Point (oC): 1041 (1091) insoluble Appearance and Odor: Black/slightly gray Other Comments: Oxidizes upon powder/pieces prolonged exposure to moist air. Practically insoluble in acids; decomposes in HNO3 Section IV Fire & Explosion Hazard Data Flash Point (method) Autoignition Temp. Flammability LEI UEI NA NA NA NA NA Extinguishing Media: Do not use water. Use dry chemical, CO2 Special Fire Fighting Procedures: Wear a self-contained breathing apparatus and full protective clothing to prevent contact with skin and eyes. Unusual Fire and Explosion Hazards: Material may emit toxic fumes of Cd and Te if involved in a fire, or on contact with acids or acidic fumes. Section V Spill or Leak Process Steps to be Taken in Case Material is Released or Spilled: Wear a self- contained breathing apparatus and full protective clothing. -
Thesis Lopez.FINAL
STUDY OF THE TOXICITY OF SYNTHETICALLY- AND BIOLOGICALLY-PRODUCED CADMIUM TELLURIDE NANOPARTICLES AND AN EXAMINATION OF THE EFFECTS OF S- ADENOSYL METHIONINE AMENDMENT ON bnf05 BACTERIAL HEADSPACE A Thesis Presented to The Faculty of the Department of Chemistry Sam Houston State University In Partial Fulfillment of the Requirements for the Degree of Master of Science by Desiré A. Lopez May, 2014 STUDY OF THE TOXICITY OF SYNTHETICALLY- AND BIOLOGICALLY-PRODUCED CADMIUM TELLURIDE NANOPARTICLES AND AN EXAMINATION OF THE EFFECTS OF S- ADENOSYL METHIONINE AMENDMENT ON bnf05 BACTERIAL HEADSPACE by Desiré A. Lopez APPROVED: Dr. Thomas G. Chasteen Thesis Director Dr. Donovan C. Haines Dr. David E. Thompson Approved: Dr. John B. Pascarella, Dean College of Sciences ABSTRACT Lopez, Desiré A., Study of the toxicity of synthetically- and biologically-produced cadmium telluride nanoparticles and an examination of the effects of S-adenosyl methionine amendment on bnf05 bacterial headspace. Master of Science (Chemistry), May, 2014, Sam Houston State University, Huntsville, Texas. Purpose The purpose of this research was: (1) to determine the toxicity of both synthetically- and biologically-produced nanoparticles (NPs); and (2) to determine if K2TeO3 could be reduced and methylated by a metalloid-resistant bacterium isolated from Antarctica, bnf05. Methods Cadmium telluride NPs were made both synthetically and biologically. Biologically-made NPs were grown under three separate growing conditions, 1) aerobic, 2) microaerobic, and 3) aerobic for the initial growth and microaerobic after the introduction of a lacZ gene inducer, to determine which condition produced the most nanoparticle fluorescence. MIC (Minimal Inhibitory Concentration) experiments were conducted on both synthetically- and biologically-made NPs for two different bacteria, BW and LHVE, using a colony counting technique. -
Cadmiumzinc Telluride High Resolution Detector Technology
Invited Paper CadmiumZinc Telluride High Resolution Detector Technology Arnold Burger, Henry Chen, Kaushik Chattopadhyay, Jean-Olivier Ndap and Stephen U. Egarievwe, Center for Photonic Materials and Devices, Department of Physics Nashville, TN 37208-3051, U. S. A. and R. B. James, Advanced Electronics Manufacturing Technologies Department, Sandia National Laboratories, Livermore, CA 94550 ABSTRACT Electrode contacting on semiconductor radiation detectors has been a topic of active interest in many recent investigations. Research activities have focused on the morphology and chemistry of modified surfaces using sophisticated preparation techniques and employing characterization methods that are able to discriminate between surface and bulk effects. From an applied point of view, the detector fabrication technology involves a series of fabrication steps which can be optimized. Results of an ongoing effort to improve the performance of high resolution Cd,Zn1Te (CZT) spectrometers by addressing wafer surface preparation, electrode deposition and contact passivation are described.. Keywords: Cadmium zinc telluride, detector fabrication, contacts, surface preparation 1. INTRODUCTION There is presently a widespread need for room temperature gamma and X-ray imaging capability for both medical and industrial applications. Solid state CZT arrays offer the possibility of reducing the weight of existing nuclear medicine cameras based on scintillators and photomultiplier. CZT combines the room temperature operation with the energy resolution that approaches that ofthe cryogenically cooled Ge and Si detectors. However, CZT detectors are still in very limited use, mainly due to the limited availability oflow price and defect free material. Recently, studies aimed at a better understanding of the electric contact formation process were performed and it was shown that in many cases, in particular when high resolution, low active volume detectors, the performance of the detectors is limited by surface preparation, contacting and device passivation.