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Two-Dimensional Spatio-Temporal Signal Processing for Dispersion Compensation in Time- Stretched ADC
UCLA UCLA Previously Published Works Title Two-dimensional spatio-temporal signal processing for dispersion compensation in time- stretched ADC Permalink https://escholarship.org/uc/item/1p65n9cp Journal Journal of Lightwave Technology, 25 ISSN 0733-8724 Authors Tarighat, Alireza Gupta, Shalabh Sayed, Ali H. et al. Publication Date 2007-06-01 Peer reviewed eScholarship.org Powered by the California Digital Library University of California 1580 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 25, NO. 6, JUNE 2007 Two-Dimensional Spatio-Temporal Signal Processing for Dispersion Compensation in Time-Stretched ADC Alireza Tarighat, Member, IEEE, Shalabh Gupta, Student Member, IEEE, Ali H. Sayed, Fellow, IEEE, and Bahram Jalali, Fellow, IEEE Abstract—Time-stretched analog-to-digital converters (ADCs) have offered revolutionary enhancements in the performance of electronic converters by reducing the signal bandwidth prior to digitization. An inherent limitation of the time-stretched ADC is the frequency-selective response of the optical system that reduces the effective number of bits for ultrawideband signals. This paper proposes a solution based on spatio-temporal digital processing. The digital algorithm exploits the optical phase diversity to create a flat RF frequency response, even when the system’s transfer function included deep nulls within the signal spectrum. For a 10× time-stretch factor with a 10-GHz input signal, simulations show that the proposed solution increases the overall achievable signal-to-noise-and-distortion ratio to 52 dB in the presence of linear distortions. The proposed filter can be used to mitigate the Fig. 1. TS-ADC concept. dispersion penalty in other fiber optic applications as well. Index Terms—Analog-to-digital conversion (ADC), optical sig- a parallel array of slow digitizers, each clocked at a fraction nal processing, spatio-temporal digital processing, time-stretched of the Nyquist rate. -
Optoelectronics – the Science and Technology at the Heart Cure St of 21 Century Telecommunications
Higher Physics Topical Investigation Skin Cancer—Prevention and Optoelectronics – the science and technology at the heart Cure st of 21 century telecommunications 2 Researching Physics Higher Investigation Brief Suntan creams stop harmful UV radiation reaching the skin. Manufacturers’ products are rated with a Sun Protection Factor (SPF). Suntan creams can have SPF values from 6 to over 50. UV radiation monitors normally measure Higher Physics Researching Physics Optoelectronics – the science and technology at the heart of 21st century telecommunications Contents Advice to students Page 3 Overview of the unit and activities Page 4 Organising your work and carrying out the activities Page 5 Assessment issues Web-based research briefs Page 6 Initial research activity - Optoelectronics devices – what are they? Page 7 Research activity 1 - Light Emitting Diodes Page 8 Research activity 2 - Optical Fibres Page 9 Research activity 3 - Liquid Crystal Displays Practical investigation briefs Page 10 Research activity 1A - Investigating LEDs and Colour Page 11 Research activity 1B - Investigating LEDs and Brightness Page 12 Research activity 1C - Investigating the Spectra of LEDs Page 13 Research activity 1D - Investigating the Energy Use of Light Sources Page 14 Research activity 2A - Investigating Optical Fibres and Bending Page 15 Research activity 2B - Investigating Optical Fibres and Length Page 16 Research activity 3A - Investigating Polarisation Page 17 Research activity 3B - Investigating Polarisation using a Liquid Crystal Shutter Page 18 Research activity 3C - Investigating Colour Mixing Page 19 Further Information Page 2 Higher Physics Researching Physics Optoelectronics – the science and technology at the heart of 21st century telecommunications Overview of the unit and activities. -
Technology and Economic Assessment of Optoelectronics
NBSIR-86/3369 A111DE M 3 b 2 7 3 PLANNING REPORT Technology and Economic Assessment of Optoelectronics Gregory Tassey Senior Economist National Bureau of Standards October 1985 100 • U56 86-3369 1985 C. 2 ww BttAtCN mPMMAEQS CEHTQ PLANNING REPORT 23 TECHNOLOGY AND ECONOMIC ASSESSMENT OF OPTOELECTRONICS Gregory Tassev Senior Economist National Bureau of Standards October 1985 ABSTRACT Optoelectronics is one of the two major technologies driving the revolution in communications, which will not only have profound effects on the economy but on social and political structures as well. The other technology, optical fibers, is already beginning to mature, but optoelectronics is rapidly catching ud, enabling the acceleration of the "information age". Future productivity advances in optoelectronics will come from integration of the various signal processing functions and from improved manufacturing technologies . Integration may occur in two important stages. The first, referred to "hybrid" integration, is almost at the point of commercialization. Hybrid devices use oxide-based (ceramic) materials and integrate some of the signal processing functions. Total or "monolithic" integration, based on gallium arsenide and related materials may not reach commercialization for another 8-10 years. In both cases, the economic impact will be substantial as information technologies become a critical element of most industries. As a result, the U.S. and its major competitors, especially Japan, are making major R&D investments in optoelectronics. Worldwide R&D expenditures are expected to reach $1 billion by 1987. In terms of market penetration, fiberoptic systems will attain annual sales of more than S3 billion by 1989. The Japanese have made a national commitment to becoming the world leader in this market, borrowing from their substantial expertise in semiconductor technology. -
Denys I. Bondar
Updated on July 15, 2020 Denys I. Bondar Assistant Professor, Department of Physics and Engineering Physics, Tulane University, 2001 Percival Stern Hall, New Orleans, Louisiana, USA 70118 office: 4031 Percival Stern Hall e-mail: [email protected] phone: +1 (504) 862 8701 web: Google Scholar, Research Gate, ORCiD Education Ph. D. in Physics 01/2007{12/2010 Department of Physics and Astronomy, • University of Waterloo, Waterloo, Ontario, Canada Ph. D. thesis [arXiv:1012.5334]: supervisor: Misha Yu. Ivanov; co-supervisor: Wing-Ki Liu M. Sc. and B. Sc. in Physics with Honors 09/2001{06/2006 • Uzhgorod National University, Uzhgorod, Ukraine B. Sc. in Computer Science 09/2001{06/2006 • Transcarpathian State University, Uzhgorod, Ukraine Awards, Grants, and Scholarships Young Faculty Award DARPA 2019{2021 Army Research Office (ARO) grant W911NF-19-1-0377 2019{2021 Defense University Research Instrumentation Program (DURIP) 2018 Humboldt Research Fellowship for Experienced Researchers 2017-2020 Air Force Young Investigator Research Program 2016-2019 Los Alamos Director's Fellowship (declined) 2013 President's Graduate Scholarship (University of Waterloo) 2010 Ontario Graduate Scholarship 2010 International Doctoral Student Awards (University of Waterloo) 2007-2010 Award of Recognition at the All-Ukrainian Contest of Students' Scientific Works 2006 Current Research Interests • Quantum technology • Optics including quantum, ultrafast, nonlinear, and incoherent • Optical communication and sensing • Nonequilibrium quantum statistical mechanics 1 • Many-body -
Recent Advances in Silicon Photonic Integrated Circuits John E
Invited Paper Recent Advances in Silicon Photonic Integrated Circuits John E. Bowers*, Tin Komljenovic, Michael Davenport, Jared Hulme, Alan Y. Liu, Christos T. Santis, Alexander Spott, Sudharsanan Srinivasan, Eric J. Stanton, Chong Zhang Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA *[email protected] ABSTRACT We review recent breakthroughs in silicon photonics technology and components and describe progress in silicon photonic integrated circuits. Heterogeneous silicon photonics has recently demonstrated performance that significantly outperforms native III-V components. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications, sensors and silicon electronics is reviewed. Keywords: Heterogeneous silicon platform, integrated optoelectronics, optoelectronic devices, semiconductor lasers, silicon-on-insulator (SOI) technology, silicon photonics 1. INTRODUCTION Heterogeneous silicon photonics, due to its potential for medium- and large-scale integration, has been intensively researched. Recent developments have shown that heterogeneous integration not only allows for a reduced cost due to economy of scale, but also allows for same or even better performing devices than what has previously been demonstrated utilizing only III-V materials. Furthermore we believe that optical interconnects are the only way to solve the scaling limitation in modern processors, and that heterogeneous silicon photonics with on-chip sources is the best approach in the long term as it promises higher efficiency and lower cost. We address both beliefs in sections that follow. In this paper we plan to briefly address heterogeneous silicon approaches, and point-out that the heterogeneous silicon platform is more than just III-V on silicon but can have advantages for isolators, circulators and nonlinear devices (Section 2). -
Nanosystems, Edge Computing, and the Next Generation Computing Systems
sensors Review Nanosystems, Edge Computing, and the Next Generation Computing Systems Ali Passian * and Neena Imam Computing & Computational Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, TN 37830, USA; [email protected] * Correspondence: [email protected] Received: 30 July 2019; Accepted: 16 September 2019; Published: 19 September 2019 Abstract: It is widely recognized that nanoscience and nanotechnology and their subfields, such as nanophotonics, nanoelectronics, and nanomechanics, have had a tremendous impact on recent advances in sensing, imaging, and communication, with notable developments, including novel transistors and processor architectures. For example, in addition to being supremely fast, optical and photonic components and devices are capable of operating across multiple orders of magnitude length, power, and spectral scales, encompassing the range from macroscopic device sizes and kW energies to atomic domains and single-photon energies. The extreme versatility of the associated electromagnetic phenomena and applications, both classical and quantum, are therefore highly appealing to the rapidly evolving computing and communication realms, where innovations in both hardware and software are necessary to meet the growing speed and memory requirements. Development of all-optical components, photonic chips, interconnects, and processors will bring the speed of light, photon coherence properties, field confinement and enhancement, information-carrying capacity, and the broad spectrum of light into the high-performance computing, the internet of things, and industries related to cloud, fog, and recently edge computing. Conversely, owing to their extraordinary properties, 0D, 1D, and 2D materials are being explored as a physical basis for the next generation of logic components and processors. Carbon nanotubes, for example, have been recently used to create a new processor beyond proof of principle. -
Photonics and Optoelectronics
Photonics and Optoelectronics Effects of Line Edge Roughness on Photonic Device Performance through Virtual Fabrication ...................................... 43 Reprogrammable Electro-Chemo-Optical Devices ............................................................................................................... 44 On-chip Infrared Chemical Sensor Leveraging Supercontinuum Generation in GeSbSe Chalcogenide Glass Waveguide ............................................................................................................................... 45 Sensing Chemicals in the mid-Infrared using Chalcogenide Glass Waveguides and PbTe Detectors Monolithically Integrated On-chip ......................................................................................................... 46 Broadband Low-loss Nonvolatile Photonic Switches Based on Optical Phase Change Materials (O-PCMs) ............... 47 Chalcogenide Glass Waveguide-integrated Black Phosphorus mid-Infrared Photodetectors .......................................... 48 An Ultrasensitive Graphene-polymer Thermo-mechanical Bolometer ................................................................................ 49 Nanocavity Design for Reduced Spectral Diffusion of Solid-state Defects ......................................................................... 50 Two-dimensional Photonic Crystal Cavities in Bulk Single-crystal Diamond ....................................................................... 51 Quasi-Bessel-Beam Generation using Integrated Optical Phased Arrays .......................................................................... -
Advances in Photonic Devices Based on Optical Phase-Change Materials
molecules Review Advances in Photonic Devices Based on Optical Phase-Change Materials Xiaoxiao Wang 1, Huixin Qi 1, Xiaoyong Hu 1,2,3,*, Zixuan Yu 1, Shaoqi Ding 1, Zhuochen Du 1 and Qihuang Gong 1,2,3 1 Collaborative Innovation Center of Quantum Matter & Frontiers Science Center for Nano-Optoelectronics, State Key Laboratory for Mesoscopic Physics & Department of Physics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China; [email protected] (X.W.); [email protected] (H.Q.); [email protected] (Z.Y.); [email protected] (S.D.); [email protected] (Z.D.); [email protected] (Q.G.) 2 Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226010, China 3 Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China * Correspondence: [email protected] Abstract: Phase-change materials (PCMs) are important photonic materials that have the advantages of a rapid and reversible phase change, a great difference in the optical properties between the crystalline and amorphous states, scalability, and nonvolatility. With the constant development in the PCM platform and integration of multiple material platforms, more and more reconfigurable photonic devices and their dynamic regulation have been theoretically proposed and experimentally demonstrated, showing the great potential of PCMs in integrated photonic chips. Here, we review the recent developments in PCMs and discuss their potential for photonic devices. A universal overview of the mechanism of the phase transition and models of PCMs is presented. PCMs have injected new life into on-chip photonic integrated circuits, which generally contain an optical switch, Citation: Wang, X.; Qi, H.; Hu, X.; an optical logical gate, and an optical modulator. -
Avalanche Photodiode a User Guide Understanding Avalanche Photodiode for Improving System Performance
High performance sensors APPLICATION NOTE Avalanche photodiode A User Guide Understanding Avalanche photodiode for improving system performance Introduction Contents Avalanche photodiode detectors (APD) APD structures have and will continue to be used in APD noise many diverse applications such as laser Photon counting technique range finders, data communications or photon correlation studies. This paper discusses APD structures, critical Applications performance parameter and excess noise Light detection factor. Laser range finder For low-light detection in the 200- to Photon counting 1150-nm range, the designer has three Datacomm basic detector choices - the silicon PIN Optical Tomography detector, the silicon avalanche LIDAR photodiode (APD) and the photomultiplier Fluorescence detection tube (PMT). Particle sizing APDs are widely used in instrumentation and aerospace applications, offering a combination of high speed and high sensitivity unmatched by PIN detectors, and quantum efficiencies at >400 nm unmatched by PMTs. www.optoelectronics.perkinelmer.com APPLICATION NOTE Table of Contents What is an Avalange photodiode 3 Selecting an APD 5 Excess Noise Factor 6 Geiger Mode 7 Applications 8 www.optoelectronics.perkinelmer.com Avalanche photodiode 2 APPLICATION NOTE What is an Avalanche Photodiode? APD Structures In order to understand why more than one APD structure exists, it is important to appreciate the design trade-offs that must be accommodated by the APD designer. The ideal APD would have zero dark noise, no excess noise, broad spectral and frequency response, a gain range from 1 to 106 or more, and low cost. More simply, an ideal APD would be a good PIN photodiode with gain! In reality however, this is difficult to achieve because of the need to trade-off conflicting design requirements. -
System-On-Chip Photonic Integrated Circuits (Invited)
System-On-Chip Photonic Integrated Circuits (Invited) Fred Kish, Fellow IEEE, Vikrant Lal, Peter Evans, Scott Corzine, Mehrdad Ziari, Tim Butrie, Mike Reffle, Huan-Shang Tsai, Andrew Dentai, Fellow IEEE, Jacco Pleumeekers, Mark Missey, Matt Fisher, Sanjeev Murthy, Randal Salvatore, Parmijit Samra, Scott Demars, Naksup Kim, Adam James, Amir Hosseini, Pavel Studenkov, Matthias Lauermann, Ryan Going, Mingzhi Lu, Jiaming Zhang, Jie Tang, Jeff Bostak, Thomas Vallaitis, Matthias Kuntz, Don Pavinski, Andrew Karanicolas, Babak Behnia, Darrell Engel, Omer Khayam, Nikhil Modi, Mohammad R. Chitgarha, Pierre Mertz, Wilson Ko, Robert Maher, John Osenbach, Jeff Rahn, Han Sun, Kuang-Tsan Wu, Matthew Mitchell, David Welch, Fellow IEEE electronic IC concept to photonics. This photonic integrated Abstract—Key advances which enabled the InP photonic circuit, or PIC, was first proposed by Miller [6] in 1969. Over integrated circuit (PIC) and the subsequent progression of InP the past 47 plus years since this publication, there have been PICs to fully integrated multi-channel DWDM system-on-chip numerous research demonstrations of PICs; however, the (SOC) PICs are described. Furthermore, the current state-of-the- ability for the economic value derived from an integrated art commercial multi-channel SOC PICs are reviewed as well as key trends and technologies for the future of InP-based PICs in component to outweigh the cost of the integration itself has optical communications. limited their commercial success as well as the investment in their development. To date, the application that has primarily Index Terms— Photonic Integrated Circuit, optical receivers, driven the introduction and scaling of PICs has been their use optical transmitters. -
Optical Memristive Switches
J Electroceram DOI 10.1007/s10832-017-0072-3 Optical memristive switches Ueli Koch1 & Claudia Hoessbacher1 & Alexandros Emboras1 & Juerg Leuthold1 Received: 18 September 2016 /Accepted: 6 February 2017 # The Author(s) 2017. This article is published with open access at Springerlink.com Abstract Optical memristive switches are particularly inter- signals. Normally, the operation speed is moderate and in esting for the use as latching optical switches, as a novel op- the MHz range. The application range includes usage as a tical memory or as a digital optical switch. The optical new kind of memory which can be electrically written and memristive effect has recently enabled a miniaturization of optically read, or usage as a latching switch that only needs optical devices far beyond of what seemed feasible. The to be triggered once and that can keep the state with little or no smallest optical – or plasmonic – switch has now atomic scale energy consumption. In addition, they represent a new logical andinfactisswitchedbymovingsingleatoms.Inthisreview, element that complements the toolbox of optical computing. we summarize the development of optical memristive The optical memristive effect has been discovered only switches on their path from the micro- to the atomic scale. recently [1]. It is of particular interest because of strong Three memristive effects that are important to the optical field electro-optical interaction with distinct transmission states are discussed in more detail. Among them are the phase tran- and because of low power consumption and scalability [8]. sition effect, the valency change effect and the electrochemical Such devices rely in part on exploiting the electrical metallization. -
Optical Computing: a 60-Year Adventure Pierre Ambs
Optical Computing: A 60-Year Adventure Pierre Ambs To cite this version: Pierre Ambs. Optical Computing: A 60-Year Adventure. Advances in Optical Technologies, 2010, 2010, pp.1-15. 10.1155/2010/372652. hal-00828108 HAL Id: hal-00828108 https://hal.archives-ouvertes.fr/hal-00828108 Submitted on 30 May 2013 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. Hindawi Publishing Corporation Advances in Optical Technologies Volume 2010, Article ID 372652, 15 pages doi:10.1155/2010/372652 Research Article Optical Computing: A 60-Year Adventure Pierre Ambs Laboratoire Mod´elisation Intelligence Processus Syst`emes, Ecole Nationale Sup´erieure d’Ing´enieurs Sud Alsace, Universit´e de Haute Alsace, 12 rue des Fr`eres Lumi`ere, 68093 Mulhouse Cedex, France Correspondence should be addressed to Pierre Ambs, [email protected] Received 15 December 2009; Accepted 19 February 2010 Academic Editor: Peter V. Polyanskii Copyright © 2010 Pierre Ambs. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Optical computing is a very interesting 60-year old field of research.