Use of Inorganic Aqueous Solutions for Passivation of Heat Transfer Devices

Total Page:16

File Type:pdf, Size:1020Kb

Use of Inorganic Aqueous Solutions for Passivation of Heat Transfer Devices 10th IHPS, Taipei, Taiwan, Nov. 6-9, 2011 Use of Inorganic Aqueous Solutions for Passivation of Heat Transfer Devices Sean Reilly a, Ladan Amouzegar a, H. Tom Tao b and Ivan Catton a a University of California at Los Angeles, Los Angeles, CA, 90095, USA b Posnett International Co. Ltd., Walnut, CA 91789, USA Tel :310.825.8185 , E-mail: [email protected] ABSTRACT Heat pipes are an effective means by which to transfer heat while maintaining a low temperature difference between the source and sink. Typically a heat pipe is constructed of a conductive material, such as copper, and filled with a working fluid at a given pressure. The favorable heat transfer performance is accomplished because heat pipes transfer energy through both sensible and latent heat. The high heat of vaporization of water and favorable operating range for electronics make it an appealing working fluid for use in heat pipes. However, one drawback of using water based heat pipes is a limitation on the type of casing material that may be used. In particular, water is incompatible for use with aluminum because water will form non-condensable gas when in contact with aluminum. This is unfortunate because aluminum is particularly lightweight and has high thermal conductivity (approximately half that of copper). In this work, an inorganic aqueous solution (IAS), with similar thermophysical properties to water, has been tested as a working fluid for use in heat pipes. Further, a technique by which this fluid can be used effectively with aluminum is presented. It is believed that constituents present in solution react with the surface to passivate it and the presence of ions in the vapor indicate continuous deposition of material throughout the device. It will be shown that the fluid demonstrates similar performance to water heat pipes with no indication of non-condensable gas formation after continuous operation for more than 7 weeks. Lifetime and performance testing will be shown in this work and future applications of this development suggested. The development of aluminum based heat pipes using fluid which has similar latent heat properties to water presents a significant increase over state of the art aluminum devices. Keywords: Inorganic Aqueous Solution (IAS), Non-Condensable Gas 1. INTRODUCTION simplest version of a heat pipe, a thermo-siphon or Perkins tube, the walls of the tube are smooth 1.1. Background and the device is oriented perpendicular to gravity In many devices, protecting the device from a with heat added at the bottom. The fluid is potentially harmful environment is of paramount inserted and is put under a vacuum of a given of importance in increasing the device lifetime. strength in order to manipulate the saturation Environmental concerns can degrade, destroy, or temperature. The saturation temperature is form harmful materials that interfere with normal generally chosen to be application specific, so that operation. For instance, in a heat pipe, use of operation occurs in a prescribed range. Once the water in conjunction with aluminum is an device is sealed it is considered prepared for use. incompatible combination as water will oxidize As mentioned previously, water is an the surface of aluminum, forming aluminum oxide incompatible working fluid for use with and hydrogen. Hydrogen, is non-condensable aluminum. In general, water is an attractive and will eventually build up in the condenser and working fluid due to its high specific heat block the area available for condensation. capacity and its vaporization point can be Heat pipes are incredibly useful phase change manipulated around room temperature with heat transfer devices for use in many applications, interior pressure. Furthermore, Aluminum can such as electronics cooling and space based be attractive casing material due to its high devices. A heat pipe functions by adding heat at thermal conductivity (approximately half that of one end and removing it from the other. Where copper) and low density compared to copper. In the heat is added, liquid is evaporated, raising the applications where weight is paramount, such as pressure inducing flow of vapor to the condenser. space, this can make tremendous impact on the Once the liquid has condensed it travels down the design of a project. Aluminum heat pipes are walls of the tube back to the evaporator. In the therefore forced to use fluids with lower specific - 153 - heat capacities than water for these applications. Previous work by Reilly (2010) showed that This work focuses on a method by which a fluid, IAS performed better than water when used with with many similar thermophyiscal properties to porous copper evaporators. In the instance of the water can be used with an aluminum casing. wicks, the IAS degraded performance over time Various chemical constituents are added to the which led to the discovery of deposits in the wick, liquid which form an inert interface between the seen in Figure . liquid and the casing allowing for continuous use with no evidence of formation of non-condensable gasses. An explanation of the fluid will be presented followed by the experimental method, results, sealing techniques and future work 1.2. What is IAS? The Inorganic Aqueous Solution (IAS) mentioned in this work is a complex mix of approximately 9 chemical constituents, including water, which can be seen in Figure , which shows the results of chromatography performed on the fluid. Figure 2: SEM of IAS Treated Copper Porous Media KMnO 4 SEM photographs were taken showing many ligature shaped deposits in the interstitial spaces CaCr 2O7 between particles and clusters within the wick. It was speculated at the time that these deposits SrCr O might not only have an effect on the physical 2 7 structure and hydrodynamic properties of the wick, but also might affect the surface interactions and MgCr O 2 7 reactions. This hypothesis was inspired in part due to testing on the IAS performed at the Naval Ag Cr O 2 2 7 Research Lab which showed that IAS formed 100x less hydrogen in a reaction test with Figure 1: Chemical constituents of IAS aluminum as compared to water. The fluid itself was originally believed to be a Thermophsyical Property testing performed by solid-state, hyper-conductive surface treatment Amouzegar showed that the properties of the IAS for copper tubing as it was originally proposed varied very little from water. Enthalpy of by Professor Qu, in China. These so called vaporization and surface tension were virtually “Qu Tubes” or “Super tubes” generated identical to that of water, despite generally significant interest in the United States as a improved performance in comparison with that of result of several favorable performance claims. water. However, significant reduction of contact Performance of delivered devices was angle was noted between liquid water and inconsistent, though, especially when tested surfaces that had been treated by IAS. The assuming that the device was performing in a origin of this performance gain is the focus of solid state mode. future work. However, it is worth noting, that The significant presence of chromates might even though many of the properties of the IAS do suggest that the fluid was originally inspired by not differ very much from water, they are chromate passivation schemes, popular for use generally more favorable than evaporative heat with aluminum alloys. Rocco (2004) compared transfer fluids currently used in aluminum pipes. two different methods of chromate coatings on If the passivation of aluminum by IAS can be Al/Zn alloys which were designed to discourage verified, significant improvement in performance corrosion and allow increased adherence of paint. over current devices, such as reduction of weight The increased corrosion resistance might permit and construction cost, etc., can be achieved. water to be in constant contact with an aluminum surface and actively resist oxidation. 2. EXPERIMENT - 154 - 2.1. Experimental Method temperatures inside the evaporator. This was done in order to ensure that the critical value was Aluminum tubes approximately 1 meter in not reached during lifetime testing. length were constructed. These tubes were charged with various amounts of the IAS fluid. Once the tubes reached dryout, heat flux was Based on the test results from the NRL report, it cut to the tube and the evaporator temperature was was desired to characterize the range of allowed to fall to approximately 60 oC. At this non-reactivity of the IAS with aluminum. The point, the heat flux was again supplied, though first tubes were welded shut after being charged below the point of dryout. with the IAS fluid but these tubes eventually failed, As mentioned previously, the tubes were due to the formation of non-condensable gasses. connected to an unregulated power supply, It is speculated that the high temperatures meaning that, the power supplied to the tubes associated with the arc welding process that was varied as the load varied as supplied from a used to seal the tubes initiated a metallurgical common 208V 20 amp wall socket. This effect change in the aluminum casing that allowed is evident when examining the data as the results oxidation between the water in the IAS and the from the temperature readings tend to vary wall. somewhat over the day. Due to the failure of welding, low temperature Data was recorded continuously but the tube solder was used as a sealing method. 3003-H2 was only actively monitored sporadically, in order Alloy aluminum tubing was used in conjunction to determine if an error occurred. A temperature with 6061 alloy end caps to construct the tube. measurment was recorded electronically, This work will document the tubes which were approximately every 10 minutes for lifetime used with low temperature solder as these tubes testing. The data shown here is the result of have so far, showed no sign of formation of lifetime testing conducted over 2 weeks, but the formation of non-condensable gasses.
Recommended publications
  • Evaluation of Passivation Process for Stainless Steel Hypotubes Used in Coronary Angioplasty Technique
    coatings Article Evaluation of Passivation Process for Stainless Steel Hypotubes Used in Coronary Angioplasty Technique Lucien Reclaru 1,2 and Lavinia Cosmina Ardelean 2,3,* 1 Scientific Independent Consultant Biomaterials and Medical Devices, 103 Paul-Vouga, 2074 Marin-Neuchâtel, Switzerland; [email protected] 2 Multidisciplinary Center for Research, Evaluation, Diagnosis and Therapies in Oral Medicine, “Victor Babes” University of Medicine and Pharmacy Timisoara, 2 Eftimie Murgu sq, 300041 Timisoara, Romania 3 Department of Technology of Materials and Devices in Dental Medicine, “Victor Babes” University of Medicine and Pharmacy Timisoara, 2 Eftimie Murgu sq, 300041 Timisoara, Romania * Correspondence: [email protected] Abstract: In the manufacturing of hypotubes for coronary applications, austenitic steels of types 304, 304, or 316 L are being used. The manufacturing process involves bending steel strips into tubes and the continuous longitudinal welding of the tubes. Manufacturing also includes heat treatments and stretching operations to achieve an external/internal diameter of 0.35/0.23 mm, with a tolerance of +/− 0.01 mm. Austenitic steels are sensitive to localized corrosion (pitting, crevice, and intergranular) that results from the welding process and various heat treatments. An extremely important step is the cleaning and the internal and external passivation of the hypotube surface. During patient interventions, there is a high risk of metal cations being released in contact with human blood. The aim of this study was to evaluate the state of passivation and corrosion resistance by using electrochemical methods and specific intergranular corrosion tests (the Strauss test). There were difficulties in passivating the hypotubes and assessing the corrosion phenomena in the interior of the tubes.
    [Show full text]
  • Si Passivation and Chemical Vapor Deposition of Silicon Nitride: Final Technical Report, March 18, 2007
    A national laboratory of the U.S. Department of Energy Office of Energy Efficiency & Renewable Energy National Renewable Energy Laboratory Innovation for Our Energy Future Si Passivation and Chemical Subcontract Report NREL/SR-520-42325 Vapor Deposition of Silicon Nitride November 2007 Final Technical Report March 18, 2007 H.A. Atwater California Institute of Technology Pasadena, California NREL is operated by Midwest Research Institute ● Battelle Contract No. DE-AC36-99-GO10337 Si Passivation and Chemical Subcontract Report NREL/SR-520-42325 Vapor Deposition of Silicon Nitride November 2007 Final Technical Report March 18, 2007 H.A. Atwater California Institute of Technology Pasadena, California NREL Technical Monitor: R. Matson/F. Posey-Eddy Prepared under Subcontract No. AAT-2-31605-01 National Renewable Energy Laboratory 1617 Cole Boulevard, Golden, Colorado 80401-3393 303-275-3000 • www.nrel.gov Operated for the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy by Midwest Research Institute • Battelle Contract No. DE-AC36-99-GO10337 This publication was reproduced from the best available copy Submitted by the subcontractor and received no editorial review at NREL NOTICE This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States government or any agency thereof.
    [Show full text]
  • Analysis of the Silicon Dioxide Passivation and Forming Gas
    &RQIHUHQFH3URFHHGLQJV 6RODU:RUOG&RQJUHVV Daegu, Korea, 08 – 12 November 2015 Analysis of the Silicon Dioxide Passivation and Forming Gas Annealing in Silicon Solar Cells Izete Zanesco and Adriano Moehlecke Solar Energy Technology Nucleus (NT-Solar), Faculty of Physics, Pontifical Catholic University of Rio Grande do Sul (PUCRS), Porto Alegre (Brazil) Abstract The passivation of silicon solar cells by the deposition of SiNx anti-reflection coating is usual in the industry. However, materials such as SiO2, TiO2 and Al2O3 may be a cost-effective alternative and its analysis is mainly reported in silicon wafers. The goal of this paper is to present the development and analysis of silicon solar cells passivated with a thin layer of SiO2 as well as the evaluation of the effectiveness of the annealing step in forming gas. The dry oxidation was performed before the TiO2 anti-reflection coating deposition and the annealing in forming gas was performed in the same furnace. The temperature and time of the oxidation and the annealing step were experimentally optimized. The efficiency of 15.9 %was achieved. The highest average efficiency was found in the oxidation temperature range from 750 ºC to 800 ºC, during 7 minutes, caused by the increasing of open circuit voltage and fill factor. At short wavelengths, the internal quantum efficiency decreases slightly with the increasing of the oxidation temperature. The minority carrier diffusion length (LD) of the solar cells processed with the oxidation temperature of 800 °C was around 1890 Pm. The open circuit voltage shows a slight trend of increasing with the oxidation time. The annealing step in forming gas did not improve the average efficiency of the solar cells.
    [Show full text]
  • H2O2 Hydrogen Peroxide Passivation Procedure
    Solvaytechnical Chemicals PUBLICATION H2O2 Passivation Procedure Introduction Hydrogen peroxide is a strong chemical oxidant which decomposes into water and oxygen in the presence of a catalytic quantity of any transition metal (e.g., iron, copper, nickel, etc.). The primary concern with decomposition is the buildup of pressure which can lead to pressure Prepare for passivation by roping off the work area bursts. To prevent this from occurring, any metal surface that comes in and posting warning signs. All open lights and tools contact with hydrogen peroxide must be degreased, pickled and which may spark must be removed from the passivated, even if only used once. The degreasing and pickling steps passivation area. Smoking is prohibited within the chemically clean the metal surfaces. The passivating step oxidizes the passivation area. Prior to preparation of the chemical metal surface. The thin oxide coating, which forms on the metal surface solutions, determine how to dispose of the spent during passivation, renders the surface nonreactive to hydrogen peroxide chemicals. These chemicals must be disposed of in and prevents the metal from decomposing the peroxide. a safe and environmentally sound manner that is consistent with all applicable federal, state, and The passivation procedure consists of: local regulations. 1. Grinding to remove weld spatter and smooth out scratches. 2. Degreasing to remove oil and grease films. Application methods 3. Pickling to chemically clean the surface. The chemical solutions may be applied to the metal surfaces by the four different methods listed below. 4. Passivating with nitric acid to form an oxide film. • The metal surfaces may be sprayed with the 5.
    [Show full text]
  • Effect of the Electrochemical Passivation on the Corrosion Behaviour of Austenitic Stainless Steel
    Effect of the electrochemical passivation on the corrosion behaviour of austenitic stainless steel A. Barbucci, M.Delucchi, M. Panizza, G, Farné, G. Cerisola DICheP, University of Genova, P.le Kennedy 1, 16129 Genova, Italy tel: +390103536030, e-mail: [email protected] Abstract: Cold rolled SS is also fruitfully used in deep drawing however the presence of scales or oxides on the surface reduces the life of the tools and emphasises creep phenomena of the material. Then a cleaning of the SS surface from these impurities is necessary. Oxides can be formed during the hot rolling preceding the cold one, or during the annealing performed between the several steps of thickness reduction. The annealing helps to decrease the work hardening occurring during the process. Normally this heat treatment is performed in reducing atmosphere of pure hydrogen (bright annealing), but even in this conditions oxides are formed on the SS surface. To avoid this uncontrolled oxide growth one method recently applied is an electrochemical cleaning performed in an electrolytic solution containing chrome, generally called electrochemical passivation. The electrochemical passivation allows the dissolution of the contaminating hard particles on the strips. Few scientific contributions are available in literature, which explain in detail the process mechanism. The aim of this work is to investigate if the electrochemical passivated surface acts in a different way with regard to corrosion phenomena with respect to conventional SS. Electrochemical measurements like polarisations, chronoamperometries and surface analysis were used to investigate the corrosion behaviour of electrochemically passivated AISI 304L and AISI 305. The effect of some process parameters were considered, too.
    [Show full text]
  • Why Passivate Stainless Steel and What Happens If You Don't
    Technical Article Page 1 of 4 Why Passivate Stainless Steel and What Happens If You Don’t By: Patrick H. Banes, Astro Pak Corporation To insure having the maximum corrosion resistance that austenitic stainless steel has to offer, the stainless steel surface must be in a passive state. The passive condition on the surface of the stainless steel is obtained by formation of a chromium oxide film on the metal‘s surface. This is accomplished by passivating the metal. Chemical passivation procedures using alkalines, wetting agents, chelants, and organic or inorganic acids are used to clean the metal surface thoroughly and in conjunction with an oxygen rich atmosphere, a uniform chromium oxide film forms. The key is to have a uniform chromium oxide film with an acceptable chrome to iron ratio (typically>1) and thickness (20-50) angstroms. Passivation is required to restore or enhance the chromium oxide film on the stainless steel surface when it has been manipulated by surface finishing, welding, grinding, external contamination, etc. Mechanical finishing of stainless steel surfaces allows for a very smooth surface and is a prerequisite for sub- sequent electro-polishing. The mechanical action disrupts the existing passive surface and results in a surface with a low chrome to iron ratio. The possibility of surface contamination getting pushed or smeared into the metal surface or sub-surface also exists. Welding stainless steel is one of the primary reasons for passivating. The metal surface is altered and free iron is released from the alloy. The chrome to iron ratio is also lowered in the heat affected zone of the weld.
    [Show full text]
  • Brief Review of Surface Passivation on III-V Semiconductor
    crystals Review Brief Review of Surface Passivation on III-V Semiconductor Lu Zhou 1, Baoxue Bo 2, Xingzhen Yan 1, Chao Wang 1, Yaodan Chi 1 and Xiaotian Yang 1,* 1 Jilin Provincial Key Laboratory of Architectural Electricity & Comprehensive Energy Saving, School of Electrical Engineering and Computer, Jilin Jianzhu University, Changchun 130118, China; [email protected] (L.Z.); [email protected] (X.Y.); [email protected] (C.W.); [email protected] (Y.C.) 2 National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China; [email protected] * Correspondence: [email protected] Received: 30 March 2018; Accepted: 9 May 2018; Published: 18 May 2018 Abstract: The III-V compound semiconductor, which has the advantage of wide bandgap and high electron mobility, has attracted increasing interest in the optoelectronics and microelectronics field. The poor electronic properties of III-V semiconductor surfaces resulting from a high density of surface/interface states limit III-V device technology development. Various techniques have been applied to improve the surface and interface quality, which cover sulfur-passivation, plasmas-passivation, ultrathin film deposition, and so on. In this paper, recent research of the surface passivation on III-V semiconductors was reviewed and compared. It was shown that several passivation methods can lead to a perfectly clean surface, but only a few methods can be considered for actual device integration due to their effectiveness and simplicity. Keywords: III-V semiconductor; passivation; MOCAP; ALD; XPS 1. Introduction III-V semiconductor materials, such as GaAs, InGaAs, GaSb, InP, InAs, InSb, have high surface state density (>1013 cm−2) lacking a high quality intrinsic oxide passivation layer, which lead to Fermi level pinning, surface recombination accelerating, and therefore deteriorate the device performance in microelectronic and optoelectronic fields.
    [Show full text]
  • Pickling and Passivating Stainless Steel
    Pickling and Passivating Stainless Steel Materials and Applications Series, Volume 4 Euro Inox Euro Inox is the European market development Full Members association for stainless steel. The members of the Euro Acerinox Inox include: www.acerinox.es • European stainless steel producers • National stainless steel development associations Outokumpu • Development associations of the alloying element www.outokumpu.com industries. ThyssenKrupp Acciai Speciali Terni The prime objectives of Euro Inox are to create awareness www.acciaiterni.com of the unique properties of stainless steels and to further ThyssenKrupp Nirosta their use in existing applications and in new markets. www.nirosta.de To achieve these objectives, Euro Inox organises UGINE & ALZ Belgium conferences and seminars, and issues guidance in UGINE & ALZ France printed and electronic form, to enable designers, Arcelor Mittal Group specifiers, fabricators and end users to become more www.ugine-alz.com familiar with the material. Euro Inox also supports technical and market research. Associate Members Acroni www.acroni.si ISBN 978-2-87997-224-4 (First Edition 2004 ISBN 2-87997-047-4) British Stainless Steel Association (BSSA) www.bssa.org.uk Czech version 978-2-87997-139-1 Cedinox Finnish version 2-87997-134-9 www.cedinox.es French version 978-2-87997-261-9 Centro Inox German version 978-2-87997-262-6 www.centroinox.it Dutch version 2-87997-131-4 Informationsstelle Edelstahl Rostfrei Polish version 2-87997-138-1 www.edelstahl-rostfrei.de Spanish version 2-87997-133-0 Institut de Développement de l’Inox (I.D.-Inox) Swedish version 2-87997-135-7 www.idinox.com Turkish version 978-2-87997-225-1 International Chromium Development Association (ICDA) www.icdachromium.com International Molybdenum Association (IMOA) www.imoa.info Nickel Institute www.nickelinstitute.org Polska Unia Dystrybutorów Stali (PUDS) www.puds.com.pl SWISS INOX www.swissinox.ch Content Pickling and Passivating Stainless Steel 1.
    [Show full text]
  • High-Mobility Stable 4H-Sic Mosfets Using a Thin PSG Interfacial Passivation Layer Y
    IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 2, FEBRUARY 2013 175 High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer Y. K. Sharma, A. C. Ahyi, T. Isaacs-Smith, A. Modic, M. Park, Y. Xu, E. L. Garfunkel, S. Dhar, L. C. Feldman, and J. R. Williams Abstract—Phosphorous from P2O5 is more effective than nitro- passivation (P-passivation) is more effective than NO passiva- 2 gen for passivating the 4H-SiC/SiO2 interface. The peak value tion, providing peak mobilities of 80–90 cm /V · s [7], [8] for of the field-effect mobility for 4H-SiC metal–oxide–semiconductor devices fabricated on the conventional (0001) Si-face. The peak field-effect transistors (MOSFETs) after phosphorus passivation 2 · ¯ 2 mobilities are even higher, about 125 cm /V s for the (1120) is approximately 80 cm /V · s. However, P2O5 converts the SiO2 layer to phosphosilicate glass (PSG)—a polar material that in- a-face, as reported in a recent paper [9]. troduces voltage instabilities which negate the benefits of lower However, after P-passivation, the oxide is no longer SiO2 interface trap density and higher mobility. We report a signifi- but rather is transformed to phosphosilicate glass (PSG). The cant improvement in voltage stability with mobilities as high as polar characteristics of PSG cause threshold voltage instabili- 72 cm2/V · s for MOSFETs fabricated with a thin PSG gate layer ties [8], [10]. Herein, we describe a process of forming a thin (∼10 nm) capped with a deposited oxide. PSG interfacial layer (∼10 nm) capped by a thick SiO2 layer Index Terms—MOSFET, silicon carbide, stability, thin phos- (∼35 nm) that provides much improved voltage stability and phosilicate glass (PSG).
    [Show full text]
  • How to Do Failure Analysis for Stress Cracks
    12 EDFAAO (2016) 2:12-14 1537-0755/$19.00 ©ASM International® HOW TO DO FAILURE ANALYSIS VOLUME 18 NO. 2 NO. 18 VOLUME | FOR STRESS CRACKS David Burgess, Accelerated Analysis [email protected] INTRODUCTION Stress cracks were found in products from manufactur- ers worldwide. Attempts to screen out potential failures Failure analysis is all about finding pertinent questions were not successful. The failure rate due to stress voiding with meaningful answers. (or “creep”) seemed to increase with time. That is, stress How do you do failure analysis for stress cracks? This voiding was a wearout mechanism that started at time zero. ELECTRONIC DEVICE FAILURE ANALYSIS DEVICE FAILURE ELECTRONIC is, of course, a dumb question. The obvious simple answer is: you don’t. You don’t know stress cracks are the cause BASIC CAUSE OF STRESS CRACKS of a failure before the analysis is done. Aluminum has a coefficient of thermal expansion −6 The simple answer is correct but not helpful. Dumb (CTE) of 26 × 10 /°C. The CTEs of SiO2 and silicon are questions often point to valid and real questions. In this approximately 0.5 × 10−6/°C and 3.5 × 10−6/°C, respec- case, a real question is: “If stress cracks were the cause of tively. Deposited aluminum adheres well to SiO2. Good a failure, how can that conclusion be discovered and sup- adherence to SiO2 is necessary for IC manufacture, but ported?” That is a good question and an important one. adherence results in mechanical stress in a deposited Chances are that the correct conclusion will be missed or aluminum film.
    [Show full text]
  • Passivation and the Passive Layer
    ® > Passivation and the Passive Layer DARYL L. ROLL, P.E. INTRODUCTION Purity of fluids and gases are a critical issue in the food and beverage industry. Passivation techniques provide a way of achieving it. Contamination causes serious problems for a food and beverage company. Not only can it damage or fail the end product, but it can also require the replacement of valuable equipment resulting in unnecessary expense and costly system downtime. For these reasons, clean, corrosion resistant systems are essential. Passivating chemistry using chelants is the most effective technology. Chelants (KEY-LANTS) are chemicals that form soluble, complex molecules with certain metal ions, thereby inactivating the ions in solution so they cannot normally react with another element or ions to produce precipitates or scale. Chelants enhance the solubility of scales and certain other contaminants do not precipitate when the cleaning solution’s pH is adjusted for disposal, and can be used on some scales and contaminants that mineral acids will not attack. When properly used chelants minimize intergranular attack, pitting, and other harmful effects. A TECHNICAL SUMMARY PASSIVATION DEFINED: Passivation is the chemical treatment process by which the electrochemical condition of passivity is obtained on the sur- face of metal alloys. Passivity as it relates to austenitic stainless steel is the state in which chemical reactivity is minimized under special environmental conditions, such that the metal exhibits a very low corrosion rate. A graphical representation of these zones can be seen in Figure 1. The passive layer and the transition zone are only about 3 to 4 molecular levels thick; therefore, both layers are very susceptible to damage.
    [Show full text]
  • DRAFT NEW TEST GUIDELINE Determination of Relative Metal
    15 February 2021 1 DRAFT NEW TEST GUIDELINE 2 Determination of relative metal/metalloid release using a simple 3 simulated gastric fluid (0.032 M HCl) 4 INTRODUCTION 5 1. There are several laboratory methods to determine metal/metalloid releases in synthetic 6 fluids from various materials including art materials and toys, but also soils [e.g. (1)(2)(3)]. The 7 US EPA Validated Test Method 1340 (one of SW-846 guidance methods) corresponds to the 8 “in vitro bioaccessibility assay for lead in soil" (4), the validation of an “In Vitro 9 Bioaccessibility Test Method for Estimation of Bioavailability of arsenic from soil and 10 sediment” has also been conducted (5)(6). Some of the in vitro methods have been applied to 11 refine the assessments of human exposures to metals/metalloids in soils and dusts [e.g. 12 (7)(8)(9)(10)]. Yet, until adoption of this Test Guideline, there was no internationally 13 harmonised protocol (e.g., OECD Test Guideline) on how to conduct a cell-free in vitro method 14 using a simulated gastric fluid to generate relative metal/metalloid release data for a broad 15 number of metals and metalloids. However, this Test Guideline does not discuss the regulatory 16 use of the data obtained with the test method. Relevant Competent Authorities may be consulted 17 for that purpose. 18 19 2. This Test Guideline describes how to measure material-specific metal/metalloid release 20 data and calculate relative metal/metalloid releases from materials such as metals and 21 metalloids, inorganic metal compounds and other inorganic complex metal(metalloid)- 22 containing materials [e.g., alloys, pigments, and materials of Unknown or Variable 23 composition, Complex reaction products and Biological materials (UVCBs)] in a simple 24 simulated gastric fluid composed of 0.032 M HCl, pH 1.5 ± 0.1.
    [Show full text]