Investigation of the Suitability of Amorphous Semiconductors As Sensors for Optical Process Tomography

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Investigation of the Suitability of Amorphous Semiconductors As Sensors for Optical Process Tomography PhD Thesis R.P.Jenner 5025074 Title Investigation of the suitability of amorphous semiconductors as sensors for optical process tomography ROBERT PETER JENNER A thesis submitted in partial fulfilment of the requirements of the University of Greenwich for the Degree of Doctor of Philosophy July 2000 i f* ' ' X r c PhD Thesis R.P.Jenner Contents ABSTRACT In this work, the suitability of amorphous semiconductors as hard field optical sensors for application in optical process tomography (OPT) has been established. Two amorphous semiconductors were selected for the study, these being amorphous arsenic triselenide (a-As2Se3) and hydrogenated amorphous silicon (a-Si:H). The a- As2Se3 device was a single layered structure of 60|Um thickness fabricated upon a 2mm thick cylindrical aluminium substrate. The a-Si:H device was a multi-layered structure of 27.1fim overall thickness fabricated upon a 4mm thick cylindrical aluminium substrate. 20mm2 samples were cut from the cylinders, their surface being left free for a xerographic investigation. For a tomographic investigation, semitransparent gold (Au) contacts were sputtered onto the surface of the devices to produce single contacts or contact arrays. The study comprised of the two fields of xerography and tomography. The xerographic study comprised of the measurement of such parameters as charge acceptance, dark decay, residual potential, and photoinduced discharge. The research project has concurred with other workers in that the dark discharge mechanism in a-As2Se3 proceeds via a xerographic depletion discharge process, and a Poole-Frenkel type emission in a-Si:H. The tomographic investigation involved the study of such parameters as detectivity, responsivity, steady state photocurrent, and photoinduced fatigue. Detectivity has found to be dependant upon the magnitude of applied electric field and level of incident irradiance. Irradiance in the fj orderf\ of 3.45mW/cm2 to 9.57mW/cm2 for a- As2Se3 and 5.31mW/cm to 28.32mW/cm for a-Si:H was required in order to produce a clean and repeatable photogenerated current pulse over the range of electric fields specified (0.66xl05 V/cm to 1.66xl05 V/cm). The production of steady state current has found to be dependant upon the magnitude of electric field, the level of irradiance, and the illumination period. Irradiance of 319mW/cm2 to 1.46W/cm2 with an illumination period of 520ns was required to produce steady state photocurrent in a- As2Se3, and 693mW/cm2 to 2.62W/cm2 with an illumination period of 880ns for a- Si:H. A linear relationship between electric field and responsivity has been observed in both materials over a range of irradiance of 3.45mW/cm2 to 9.57mW/cm2. Responsivity in the order of 87.86|LiAAV to 145.19|iA/W for a-As2Se3 and 14.19(iAAV to 103.81)J,AAV for a-Si:H has been demonstrated. An investigation as to the effects of photoinduced fatigue in both a-As2Se3 and a-Si:H has been carried out by the application of pulsed visible light of various flash repetition rate (FRR) under a constant high electric field over a 30 minute illumination period. It has been shown that the rate of fatigue is dependant upon the material, time, electric field, light intensity, and FRR. A maximum operating speed of 20Hz has been determined for a- As2Se3 and lOOHz for a-Si:H. The maximum operating speed of 20Hz for a-As2Se3 was deemed unsuitable for OPT application and the a-As2Se3 material was eliminated from further tomographic investigation. Tomographic prototypes were employed to establish the a-Si:H devices ability to produce qualitative and quantitative data. The results of this investigation demonstrated that 1mm changes in water level and 0.5% changes in fluid colour could be accurately determined by the a-Si:H device at speeds required for OPT. The use of an a-Si:H device containing a Au contact array facilitated the imaging of the curvature of a pipeline and a phantom object contained within the pipeline. The results of the overall investigation have confirmed that the a- Si:H device is suitable for application as a hard field optical sensor for OPT. PhD Thesis R.P.Jenner Acknowledgements ACKNOWLEDGEMENTS I am very grateful to my supervisor Dr S.M. Vaezi-Nejad for his help, guidance and financial support throughout the course of the research project. I am also grateful to my second supervisor Dr Charles May for his interest in this work. I wish to thank the technical staff of the Medway School of Engineering, in particular Mr lan Cakebread for their help and advice. I wish to thank the Solid State Research group at Imperial College, London, for supplying the majority of the amorphous materials employed in this project. I particularly want to thank the head of the group Dr Juhasz for his help and advice. Finally I wish to thank the head of the Medway School of Engineering Professor Alan Reed for his moral and additional financial support throughout the research project. PhD Thesis R.P.Jenner Acknowledgements Author's Note All of the work contained within this thesis is the sole and original work of the author, except where otherwise stated by acknowledgement or reference. PhD Thesis R.P.Jenner Contents CONTENTS Page LIST OF FIGURES. 1 LIST OF TABLES. 7 CHAPTER 1: INTRODUCTION 8 CHAPTER 2: LITERATURE REVIEW 12 2.1 Medical tomography 12 2.2 Process tomography 19 2.2.1 Electrical impedance tomography 19 2.2.2 Ultrasonic tomography 21 2.2.3 Optical process tomography 23 2.3 Chapter summary 32 CHAPTER 3: AMORPHOUS SEMICONDUCTORS 34 3.1 Amorphous arsenic triselenide (a-As2Ses) 34 3.2 Hydrogenated amorphous silicon (a-Si:H) 36 3.3 Xerography 38 3.4 Charge acceptance 40 3.5 Dark decay 45 3.5.1 a-As2Se3 45 3.5.2 a-Si:H 56 3.6 Chapter summary 61 CHAPTER 4: EXPERIMENTAL APPARATUS AND PROCEDURES 62 4.1 Xerographic mode of operation 62 4.1.1 Sample preparation 62 4.1.2 Experimental procedures for the xerographic mode 64 of operation (i) Dark decay 64 (ii) Photoinduced discharge 66 4.1.3 Experimental apparatus in the xerographic mode 67 (i) Light tight enclosure 67 (ii) Timing/position sensor units 67 (iii) Sample translation mechanism 68 (iv) Measuring station 70 PhD Thesis R.P.Jenner Contents Page (v) Scorotron charger 72 (vi) Data acquisition 80 4.2 Electroded mode of operation 82 4.2.1 Sample preparation 89 4.2.2 Experimental procedures for electroded 91 mode of operation (i) Steady state and detectivity 91 (ii) Establishment of maximum operat 92 -ing speed through photoinduced fatigue (iii) Establishment of quantitative data 93 (iv) Establishment of qualitative data 95 (v) Production of images 95 4.2.3 Xenon flash unit 96 (i) Light source 97 (ii) Discharge mechanisms 102 (iii) Control signal generation 107 (iv) Control of light intensity / duration 109 4.2.4 Light detection mechanism 113 4.3 Chapter summary 115 CHAPTER 5: RESULTS OF XEROGRAPHIC INVESTIGATION 116 5.1 Xerographic mode of operation 116 5.1.1 a-As2Se3 116 (i) Charge acceptance 116 (ii) Dark decay 118 (iii) Photoinduced discharge 124 5.1.2 a-Si:H 127 (i) Charge acceptance 127 (ii) Dark decay 130 (iii) Photoinduced discharge 133 5.2 Chapter summary 135 PhD Thesis R.P.Jenner Contents Page CHAPTER 6: RESULTS OF TOMOGRAPHIC INVESTIGATION 140 6.1 a-As2Se3 140 6.1.1 Detectivity 140 6.1.2 Production of steady state current 145 6.1.3 Establishment of maximum operating speed 147 by the determination of the effects of photoinduced fatigue 6.2 a-Si:H 156 6.2.1 Detectivity 156 6.2.2 Production of steady state current 157 6.2.3 Establishment of maximum operating speed 161 by the determination of the effects of photoinduced fatigue 6.2.4 Establishment of pipeline limits 168 6.2.5 Establishment of quantitative data 172 6.2.6 Establishment of qualitative data 177 6.2.7 Production of basic images 180 (i) Curvature of the pipeline 180 (ii) Phantom object 183 6.3 Chapter summary 187 CHAPTER 7: DISCUSSION OF EXPERIMENTAL RESULTS 190 7.1 Xerographic investigation 190 7.1.1 Charge acceptance 190 (i) a-As2Se3 190 (ii) a-Si:H 190 7.1.1 Dark decay 191 (i) a-As2Se3 191 (ii) a-Si:H 192 7.2 Tomographic investigation 192 7.2.1 Detectivity 192 (i) a-As2Se3 192 (ii) a-Si:H 193 7.2.2 Production of steady state current 196 PhD Thesis R.P.Jenner Contents Page (i) a-As2Se3 196 (ii) a-Si:H 197 7.2.3 Establishment of maximum operating speed 198 by the determination of the effects of photoinduced fatigue (i) a-As2Se3 198 (ii) a-Si:H 208 7.2.4 Establishment of quantitative data 213 7.2.5 Establishment of qualitative data 216 7.2.6 Production of images 217 (i) Curvature of the pipeline 217 (ii) Phantom object 218 CHAPTER 8: CONCLUSIONS AND SUGGESTIONS 220 FOR FURTHER WORK 8.1 a-As2Se3 220 8.1.1 Xerographic investigation 220 8.1.2 Tomographic investigation 220 8.2 a-Si:H 221 8.2.1 Xerographic investigation 221 8.2.2 Tomographic investigation 221 8.3 Suggestions for further work 224 8.3.1 Effects of pulsed illumination 224 8.3.2 Light source 224 8.3.3 Effects of elevated temperature 225 8.3.4 Tomographic rig 225 8.3.5 Device design 225 REFERENCES 227 APPENDICES 234 1 Core MATLAB program 234 2 Turbo C control program listing 236 3 Establishment of optimum probe to sample surface spacing 251 and electrostatic voltmeter calibration.
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