Semiconductor Lasers
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Monday, 08:00–10:00 CLEO: QELS-Fundamental Science
07:00–18:00 Registration, Concourse Level Executive Ballroom Executive Ballroom Executive Ballroom Executive Ballroom 210A 210B 210C 210D CLEO: QELS-Fundamental Science 08:00–10:00 08:00–10:00 08:00–10:00 08:00–10:00 FM1A • Quantum FM1B • Topological Photonics I FM1C • Novel Phenomena in FM1D • Coherent Phenomena Optomechanics & Transduction Presider: To Be Announced Classical Nano-Optics in Coupled Resonator Networks Monday, 08:00–10:00 Monday, Presider: Gabriel Molina Terriza; Presider: Mo Mojahedi; Univ. of Presider: To Be Announced Centro de Fisica de Materiales, Toronto, USA Spain FM1A.1 • 08:00 FM1B.1 • 08:00 FM1C.1 • 08:00 FM1D.1 • 08:00 Invited Ultralow Dissipation Mechanical Resona- Spin-Preserving Chiral Photonic Crystal Brightness Theorems for Nanophoton- Solving Hard Computational Problems with 1,2 1 1 tors for Quantum Optomechanics, Nils Mirror, Behrooz Semnani , Jeremy Flan- ics, Hanwen Zhang , Chia Wei Hsu , Owen Coupled Lasers, Nir Davidson1; 1Weizmann 1 1 2 2 2 1 1 Johan Engelsen , Sergey A. Fedorov , Amir nery , Zhenghao Ding , Rubayet Al Maruf , Miller ; Yale Univ., USA. We present nano- Inst. of Science, Israel. We present a new a 1 1 2,1 1 H. Ghadimi , Mohammad J. Bereyhi , Alberto Michal Bajcsy ; ECE, Univ. of Waterloo, photonic ‘’brightness theorems’’, a set of new system of coupled lasers in a modified 1 1 2 2 Beccari , Ryan Schilling , Dalziel J. Wilson , Canada; Inst. for Quantum Computing, power-concentration bounds that generalize degenerate cavity that is used to solve dif- 1 1 Tobias J. Kippenberg ; Ecole Polytechnique Canada. We report on experimental realiza- their ray-optical counterparts, and motivate ficult computational tasks. -
Chapter 5 Semiconductor Laser
Chapter 5 Semiconductor Laser _____________________________________________ 5.0 Introduction Laser is an acronym for light amplification by stimulated emission of radiation. Albert Einstein in 1917 showed that the process of stimulated emission must exist but it was not until 1960 that TH Maiman first achieved laser at optical frequency in solid state ruby. Semiconductor laser is similar to the solid state laser like the ruby laser and helium-neon gas laser. The emitted radiation is highly monochromatic and produces a highly directional beam of light. However, the semiconductor laser differs from other lasers because it is small in 0.1mm long and easily modulated at high frequency simply by modulating the biasing current. Because of its uniqueness, semiconductor laser is one of the most important light sources for optical-fiber communication. It can be used in many other applications like scientific research, communication, holography, medicine, military, optical video recording, optical reading, high speed laser printing etc. The analysis of physics of laser is quite difficult and we summarize with the simplified version here. The application of laser although with a slow start in the 1960s but now very often new applications are found such as those mentioned earlier in the text. 5.1 Emission and Absorption of Radiation As mentioned in earlier Chapter, when an electron in an atom undergoes transition between two energy states or levels, it either absorbs or emits photon. When the electron transits from lower energy level to higher energy level, it absorbs photon. When an electron transits from higher energy level to lower energy level, it releases photon. -
Federico Capasso “Physics by Design: Engineering Our Way out of the Thz Gap” Peter H
6 IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, VOL. 3, NO. 1, JANUARY 2013 Terahertz Pioneer: Federico Capasso “Physics by Design: Engineering Our Way Out of the THz Gap” Peter H. Siegel, Fellow, IEEE EDERICO CAPASSO1credits his father, an economist F and business man, for nourishing his early interest in science, and his mother for making sure he stuck it out, despite some tough moments. However, he confesses his real attraction to science came from a well read children’s book—Our Friend the Atom [1], which he received at the age of 7, and recalls fondly to this day. I read it myself, but it did not do me nearly as much good as it seems to have done for Federico! Capasso grew up in Rome, Italy, and appropriately studied Latin and Greek in his pre-university days. He recalls that his father wisely insisted that he and his sister become fluent in English at an early age, noting that this would be a more im- portant opportunity builder in later years. In the 1950s and early 1960s, Capasso remembers that for his family of friends at least, physics was the king of sciences in Italy. There was a strong push into nuclear energy, and Italy had a revered first son in En- rico Fermi. When Capasso enrolled at University of Rome in FREDERICO CAPASSO 1969, it was with the intent of becoming a nuclear physicist. The first two years were extremely difficult. University of exams, lack of grade inflation and rigorous course load, had Rome had very high standards—there were at least three faculty Capasso rethinking his career choice after two years. -
UC Santa Barbara Dissertation Template
UC Santa Barbara UC Santa Barbara Electronic Theses and Dissertations Title Quantum Dot Lasers for Silicon Photonics Permalink https://escholarship.org/uc/item/8p01r83d Author Norman, Justin Publication Date 2018 Peer reviewed|Thesis/dissertation eScholarship.org Powered by the California Digital Library University of California UNIVERSITY OF CALIFORNIA Santa Barbara Quantum Dot Lasers for Silicon Photonics A dissertation submitted in partial satisfaction of the requirements for the degree Doctor of Philosophy in Materials by Justin Colby Norman Committee in charge: Professor John Bowers, Co-Chair Professor Arthur Gossard, Co-Chair Professor Chris Palmstrøm Professor Dirk Bouwmeester December 2018 The dissertation of Justin Colby Norman is approved. ____________________________________________ Professor Dirk Bouwmeester ____________________________________________ Professor Chris Palmstrøm Professor Arthur Gossard, Committee Co-Chair ____________________________________________ Professor John Bowers, Committee Co-Chair December 2018 Quantum Dot Lasers for Silicon Photonics Copyright © 2018 by Justin Colby Norman iii Dedicated to April Norman iv ACKNOWLEDGEMENTS If a thesis were like a journal article and all contributors given credit in the author list, then my title page would exceed entire length of this body of work. Pursuing a Ph.D. is not a simple endeavor, and its pursuit begins long before a student begins their journey in graduate school. To do proper justice to everyone in my life who contributed to my efforts would not be possible in the limited scope of this document, but I will attempt to acknowledge the key individuals who got me here, helped along the way in my scientific endeavors, and who helped me maintain the tenuous grip on sanity inherent to graduate studies. -
Symposium on Undergraduate Research
SYMPOSIUM ON UNDERGRADUATE RESEARCH Division of Laser Science of A.P.S - LS XXXIV - 17 September 2018.- Washington DC PARTICIPANTS’ LUNCHEON - Ballroom East - 12:00 The participants' luncheon will bring together the Symposium students and distinguished laser scientists. Sandwich lunches will be provided for participants and invited guests only. REMINDER: Group Photo Break 3:55 PM - PLEASE assemble at the designated place!!! POSTER SESSION - International Ballroom East - 1:00 Session LM4G (poster) 1:00 - 3:55 PM, Ballroom East – Dr. Keith Stein, Bethel Univ., Presider LM4G - 1 Using the Instantaneous Velocity of a Brownian Particle in an Optical Tweezer to Measure Changes in Mass. Gabriel H. Alvarez1, Julia E. Orenstein2, Lichung Ha2, Diney S. Ether Jr.2, and Mark G. Raizen2. 1) Stanford Univ., Stanford, CA 94305, 2) Univ. of Texas, Austin, TX 78712. Using a fast detector to observe the light deflected by silica mi- crospheres trapped in an optical tweezer, we obtain positional information from which instantaneous velocities are calcu- lated and fit to the Maxwell-Boltzmann distribution to extract mass. We plan to use this technology to characterize the onset of heterogeneous ice nucleation. LM4G - 2 Optical Tweezing Experiments with Dielectric Microbeads Willa Dworschack1,2, Chiu Yin Lee1, Perri Zilberman1, Martin Cohen1, Harold Metcalf 11) Stony Brook Univ., Stony Brook, NY 11794, 2) Lawrence Univ., Appleton, WI 54911 Optical tweezing utilizes the momentum carried by light to manipulate micro-scale objects. We designed and constructed an optical tweezing apparatus that enabled precision control of dielectric microbeads using a He-Ne laser and an inverted microscope. Its piconewton force capabilities were demonstrated. -
DESIGN and FABRICATION of Gan-BASED HETEROJUNCTION BIPOLAR TRANSISTORS
DESIGN AND FABRICATION OF GaN-BASED HETEROJUNCTION BIPOLAR TRANSISTORS By KYU-PIL LEE A DISSERTATION PRESENTED TO THE GRADUATE SCHOOL OF THE UNIVERSITY OF FLORIDA IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF DOCTOR OF PHILOSOPHY UNIVERSITY OF FLORIDA 2003 In his heart a man plans his course, But, the LORD determines his steps. Proverbs 16:9 ACKNOWLEDGMENTS First and foremost, I would like to express great appreciation with all my heart to Professor Pearton and Professor Ren for their expert advice, guidance, and instruction throughout the research. I also give special thanks to members of my committee (Professor Abernathy, Professor Norton, and Professor Singh) for their professional input and support. Additional special thanks are reserved for the people of our research group (Kwang-hyun, Kelly, Ben, Jihyun, and Risarbh) for their assistance, care, and friendship. I am very grateful to past group members (Sirichai, Pil-yeon, David, Donald and Bee). 1 also give my thanks to P. Mathis for her endless help and kindness; and to Mr. Santiago who is network assistant in the Chemical Engineering Department, because of his great help with my simulation. I also thank my discussion partners about material growth technologies, Dr. B. Gila, Dr. M. Overberg, Jerry and Dr. Kang-Nyung Lee. I would like to give my thanks to my friends (especially Kyung-hoon, Young-woo, Se-jin, Byeng-sung, Yong-wook, and Hyeng-jin). Even when they were very busy, they always helped my research work without hesitation. I cannot forget Samsung's vice president Dr. Jong-woo Park’s devoted help, and the steadfast support from Samsung Electronics. -
III-NITRIDE SELF-ASSEMBLED QUANTUM DOT LIGHT EMITTING DIODES and LASERS by Animesh Banerjee a Dissertation Submitted in Partial
III-NITRIDE SELF-ASSEMBLED QUANTUM DOT LIGHT EMITTING DIODES AND LASERS by Animesh Banerjee A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy (Electrical Engineering) in The University of Michigan 2014 Doctoral Committee: Professor Pallab K. Bhattacharya, Chair Associate Professor Pei-Cheng Ku Professor Joanna Mirecki-Millunchick Professor Jamie D. Phillips Animesh Banerjee © 2014 All Rights Reserved To my parents who have always stood by me, and have showered their blessings, unconditional love and unwavering support ii ACKNOWLEDGMENT I would like to express my sincere gratitude to my advisor Prof. Pallab Bhattacharya for his continuous support and motivation, his immense knowledge, enthusiasm and patience powering me along the way during my PhD years. He is a great motivator and educator. He was always available to discuss my research and any technical problem that I encountered. His sheer persistence and determination in solving any problem is something I really admire and aspire to pursue for the rest of my life. It has been truly an honor to work with Prof. Bhattacharya. I am also grateful to my committee memebers, Prof. Pei-Cheng Ku, Prof. Jamie Phillips, and Prof. Joanna Mirecki-Millunchick, for their time, insightful comments, and valuable suggestions. I would like to specially thank Prof. Millunchick for her valuable discussions and inputs during our collaborative endeavor. I am thankful to Dr. Meng Zhang and Dr. Wei Guo, my mentors in this group for getting me aquainted with epitaxial growth, fabrication and characterization. I would like to thank Dr. Junseok Heo for guiding me in my first research project here. -
Junction Analysis and Temperature Effects in Semi-Conductor
Junction analysis and temperature effects in semi-conductor heterojunctions by Naresh Tandan A thesis submitted to the Graduate Faculty in partial fulfillment of the requirements for the degree of DOCTOR OF PHILOSOPHY in Electrical Engineering Montana State University © Copyright by Naresh Tandan (1974) Abstract: A new classification for semiconductor heterojunctions has been formulated by considering the different mutual positions of conduction-band and valence-band edges. To the nine different classes of semiconductor heterojunction thus obtained, effects of different work functions, different effective masses of carriers and types of semiconductors are incorporated in the classification. General expressions for the built-in voltages in thermal equilibrium have been obtained considering only nondegenerate semiconductors. Built-in voltage at the heterojunction is analyzed. The approximate distribution of carriers near the boundary plane of an abrupt n-p heterojunction in equilibrium is plotted. In the case of a p-n heterojunction, considering diffusion of impurities from one semiconductor to the other, a practical model is proposed and analyzed. The effect of temperature on built-in voltage leads to the conclusion that built-in voltage in a heterojunction can change its sign, in some cases twice, with the choice of an appropriate doping level. The total change of energy discontinuities (&ΔEc + ΔEv) with increasing temperature has been studied, and it is found that this change depends on an empirical constant and the 0°K Debye temperature of the two semiconductors. The total change of energy discontinuity can increase or decrease with the temperature. Intrinsic semiconductor-heterojunction devices are studied? band gaps of value less than 0.7 eV. -
Solid State Laser
SOLID STATE LASER Edited by Amin H. Al-Khursan Solid State Laser Edited by Amin H. Al-Khursan Published by InTech Janeza Trdine 9, 51000 Rijeka, Croatia Copyright © 2012 InTech All chapters are Open Access distributed under the Creative Commons Attribution 3.0 license, which allows users to download, copy and build upon published articles even for commercial purposes, as long as the author and publisher are properly credited, which ensures maximum dissemination and a wider impact of our publications. After this work has been published by InTech, authors have the right to republish it, in whole or part, in any publication of which they are the author, and to make other personal use of the work. Any republication, referencing or personal use of the work must explicitly identify the original source. As for readers, this license allows users to download, copy and build upon published chapters even for commercial purposes, as long as the author and publisher are properly credited, which ensures maximum dissemination and a wider impact of our publications. Notice Statements and opinions expressed in the chapters are these of the individual contributors and not necessarily those of the editors or publisher. No responsibility is accepted for the accuracy of information contained in the published chapters. The publisher assumes no responsibility for any damage or injury to persons or property arising out of the use of any materials, instructions, methods or ideas contained in the book. Publishing Process Manager Iva Simcic Technical Editor Teodora Smiljanic Cover Designer InTech Design Team First published February, 2012 Printed in Croatia A free online edition of this book is available at www.intechopen.com Additional hard copies can be obtained from [email protected] Solid State Laser, Edited by Amin H. -
Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification
COMMUNICATION Heterojunction Bipolar Transistor www.advelectronicmat.de 2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification Geonyeop Lee, Stephen J. Pearton, Fan Ren, and Jihyun Kim* been applied to various types of semicon- The heterojunction bipolar transistor (HBT) differs from the classical homo- ductor devices, such as lasers, solar cells, junction bipolar junction transistor in that each emitter-base-collector layer high electron mobility transistors, and het- [3–6] is composed of a different semiconductor material. 2D material (2DM)- erojunction bipolar transistors (HBTs). Notably, with a bipolar junction transistor, based heterojunctions have attracted attention because of their wide range which is a three-terminal transistor fabri- of fundamental physical and electrical properties. Moreover, strain-free cated by connecting two P–N homojunc- heterostructures formed by van der Waals interaction allows true bandgap tion diodes, there is a trade-off between engineering regardless of the lattice constant mismatch. These characteristics the current gain and high-frequency ability [3,7] make it possible to fabricate high-performance heterojunction devices such because of these problems. In sharp contrast, HBTs realized using the hetero- as HBTs, which have been difficult to implement in conventional epitaxy. structure can avoid these trade-offs and Herein, NPN double HBTs (DHBTs) are constructed from vertically stacked improve device performance.[8] HBTs, due 2DMs (n-MoS2/p-WSe2/n-MoS2) using dry transfer technique. The forma- to their high power efficiency, uniformity tion of the two P–N junctions, base-emitter, and base-collector junctions, of threshold voltage, and low 1/f noise in DHBTs, was experimentally observed. -
Quantum Dot and Electron Acceptor Nano-Heterojunction For
www.nature.com/scientificreports OPEN Quantum dot and electron acceptor nano‑heterojunction for photo‑induced capacitive charge‑transfer Onuralp Karatum1, Guncem Ozgun Eren2, Rustamzhon Melikov1, Asim Onal3, Cleva W. Ow‑Yang4,5, Mehmet Sahin6 & Sedat Nizamoglu1,2,3* Capacitive charge transfer at the electrode/electrolyte interface is a biocompatible mechanism for the stimulation of neurons. Although quantum dots showed their potential for photostimulation device architectures, dominant photoelectrochemical charge transfer combined with heavy‑metal content in such architectures hinders their safe use. In this study, we demonstrate heavy‑metal‑free quantum dot‑based nano‑heterojunction devices that generate capacitive photoresponse. For that, we formed a novel form of nano‑heterojunctions using type‑II InP/ZnO/ZnS core/shell/shell quantum dot as the donor and a fullerene derivative of PCBM as the electron acceptor. The reduced electron–hole wavefunction overlap of 0.52 due to type‑II band alignment of the quantum dot and the passivation of the trap states indicated by the high photoluminescence quantum yield of 70% led to the domination of photoinduced capacitive charge transfer at an optimum donor–acceptor ratio. This study paves the way toward safe and efcient nanoengineered quantum dot‑based next‑generation photostimulation devices. Neural interfaces that can supply electrical current to the cells and tissues play a central role in the understanding of the nervous system. Proper design and engineering of such biointerfaces enables the extracellular modulation of the neural activity, which leads to possible treatments of neurological diseases like retinal degeneration, hearing loss, diabetes, Parkinson and Alzheimer1–3. Light-activated interfaces provide a wireless and non-genetic way to modulate neurons with high spatiotemporal resolution, which make them a promising alternative to wired and surgically more invasive electrical stimulation electrodes4,5. -
17 Band Diagrams of Heterostructures
Herbert Kroemer (1928) 17 Band diagrams of heterostructures 17.1 Band diagram lineups In a semiconductor heterostructure, two different semiconductors are brought into physical contact. In practice, different semiconductors are “brought into contact” by epitaxially growing one semiconductor on top of another semiconductor. To date, the fabrication of heterostructures by epitaxial growth is the cleanest and most reproducible method available. The properties of such heterostructures are of critical importance for many heterostructure devices including field- effect transistors, bipolar transistors, light-emitting diodes and lasers. Before discussing the lineups of conduction and valence bands at semiconductor interfaces in detail, we classify heterostructures according to the alignment of the bands of the two semiconductors. Three different alignments of the conduction and valence bands and of the forbidden gap are shown in Fig. 17.1. Figure 17.1(a) shows the most common alignment which will be referred to as the straddled alignment or “Type I” alignment. The most widely studied heterostructure, that is the GaAs / AlxGa1– xAs heterostructure, exhibits this straddled band alignment (see, for example, Casey and Panish, 1978; Sharma and Purohit, 1974; Milnes and Feucht, 1972). Figure 17.1(b) shows the staggered lineup. In this alignment, the steps in the valence and conduction band go in the same direction. The staggered band alignment occurs for a wide composition range in the GaxIn1–xAs / GaAsySb1–y material system (Chang and Esaki, 1980). The most extreme band alignment is the broken gap alignment shown in Fig. 17.1(c). This alignment occurs in the InAs / GaSb material system (Sakaki et al., 1977).