Friday morning – Abstracts 130 - 225 WRM 130 Survey of Analytical Techniques Useful for Thin Film Material Evaluation in High Technology Applications Hugh E. Gotts,
[email protected] NanoAnalysis, Air Liquide Electronics, Fremont, CA 94538, United States The pervasive use of organic and inorganic materials to produce thin films in semiconductor, MEMS, Flat panel, and PV industries have challenged the sensitivity and specificity of modern analytical and physical chemical techniques. The necessity to continuously produce films of a consistent thickness, purity, and morphology requires analytical tools which are capable of measuring the required parameters quickly and accurately. As this symposium will concentrate on the application of a set of analytical methodologies, this talk will provide a guide to the techniques used. It is important to characterize the composition of organo-metallic precursors via a gas chromatographic technique (GC-MS or TC-TCD/FID). Non-volatile thermally labile materials are typically analyzed using a liquid chromatographic approach (LC-MS). Trace metal (TM) content in precursor materials are accurately determined using a variety of Inductively Coupled Plasma- Mass Spectroscopy (ICP-MS) techniques. Once the thin film has been produced, TM measurements are performed utilizing LA-ICP-MS, dynamic SIMS or TOF-SIMS. Morphology is determined utilizing AFM, SEM or TEM techniques. Other techniques will be discussed as appropriate. WRM 131 Characterization of Precursors used in Semiconductor Manufacturing using a diverse set of Analytical Techniques Conor Mckenna,
[email protected], Vani Thirumala. Fab Materials Operations, Intel Corp., Santa Clara, CA 95054, United States The demands of cutting edge semiconductor manufacturing process technology require an ever- expanding range of materials to enable continued innovation for both processor performance and efficiency.