Printed and Organic Diodes: Devices, Circuits and Applications
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Flexible and Printed Electronics TOPICAL REVIEW Printed and organic diodes: devices, circuits and applications To cite this article: Thomas M Kraft et al 2017 Flex. Print. Electron. 2 033001 View the article online for updates and enhancements. This content was downloaded from IP address 164.107.165.33 on 29/09/2017 at 02:48 Flex. Print. Electron. 2 (2017) 033001 https://doi.org/10.1088/2058-8585/aa8ac3 TOPICAL REVIEW Printed and organic diodes: devices, circuits and applications RECEIVED 3 May 2017 1 1,2 1 REVISED Thomas M Kraft , Paul R Berger and Donald Lupo 28 August 2017 1 Tampere University of Technology, Electronics and Communications Engineering, PO Box 692, FI-33101 Tampere, Finland 2 ACCEPTED FOR PUBLICATION Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, United States of America 6 September 2017 E-mail: donald.lupo@tut.fi PUBLISHED 29 September 2017 Keywords: printed diodes, printed electronics, tunnel diodes, rectification, energy harvesting, organic electronics Abstract We review the history and current state of the art of diodes fabricated with organic semiconductors and other printable materials. In particular, we look at the integration of printed diodes into circuits and systems for applications, with particular emphasis on rectification, energy harvesting, and negative differential resistance (e.g. tunnel diodes). An overview of solution processed and printable organic and inorganic materials utilised in diodes is provided with an in depth analysis of their physics of operation. Furthermore, it is explained how the diverse array in which printed diodes can be implemented demonstrates their potential in the printed electronics industry. 1. Introduction functional circuits for applications such as rectification, RF energy harvesting and thin-film-diode (TFD) display The foreseen advantages of organic semiconductor backplanes. In section 5 we review a recent special case of materials rely on the possibility to fabricate electronic solution processed diodes, namely tunnel diodes. components and circuits using cost-effective manufac- In order to adequately cover novel progress in the turing processes. A large number of devices have been field but keep the scope of this review manageable, we demonstrated, such as organic field-effect transistors have chosen to discuss diodes that are based on (OFET) [1–14],photovoltaics(OPV) [15–20] and light- organic semiconductors and/or are fabricated using emitting diodes (OLED) [21]. These topics have been solution processing. For example, organic diodes extensively reported in the literature. There has been made by vacuum evaporation are included, as are less emphasis on purely electronic diodes, but these are metal oxide devices fabricated from solution, but we important not only for a better understanding of the do not include metal oxide devices made using the device physics of OPV and OLED devices [22, 23],but vacuum processes that are seeing substantial commer- also for their use as components in a variety of circuits. cialisation, e.g. in TFT display backplanes [30, 31]. In this review we will focus on rectifying diodes and will not address OPV [19, 24–27] or OLED [28, 29] in any detail; for these topics the reader is recommended to 2. Organic diode architectures consult some of the excellent reviews which have appeared recently. In section 2 we discuss the basic archi- The diode is a quintessential component used in tectures for organic and printed diodes, specifically electronics to control the unidirectional flow of Schottky, metal–insulator–metal (MIM) and doped p–n current. A key component of a diode is a junction that junction devices and review the development in under- allows current to flow in one direction but not in standing of how these devices work. In section 3 we another. The most common diodes in conventional review the classes of materials that have been used, electronics are based on p–n homo- or heterojunc- including both evaporated and solution processed tions; the physics of such diodes is well described and organic semiconductors as well as solution processed part of a basic education in solid state physics [32], inorganic materials. In section 4 we review the progress therefore will not be described further here. in increasing the switching speed of organic and printed Another common type of diode in the conven- diodes and investigate the factors currently limiting high- tional electronic industry is a Schottky diode, which speed operation. This section also includes the achieve- consists of a layer of p or n type semiconductor situ- ments in integration of organic and printed diodes into ated between two contacts, one of which is Ohmic and © 2017 IOP Publishing Ltd Flex. Print. Electron. 2 (2017) 033001 T M Kraft et al Figure 1. Energy level alignment diagram between a metal and a p-type semiconductor (a) before contact, (b) after contact. Evac is the vacuum energy level, qfM is the metal work function, EF,M is the metal Fermi energy, EF,SC is the semiconductor Fermi energy, qχ is the semiconductor electron affinity, EC is the semiconductor conduction band edge, EV is the semiconductor valence band edge, qfB is the Schottky barrier energy and W is the depletion region. Reproduced with permission from [33]. one of which blocks charge injection in one bias but state, and the terms ‘p type’ and ‘n type’ refer to rela- not in the other [32]. Figure 1 below shows a sketch of tive charge carrier mobility and not to carrier con- a Schottky contact between metal and p type semi- centration as in conventional semiconductors. Using conductor [33]. On the left side of the figure, the metal typical estimates of intrinsic charge carrier densities in and semiconductor are isolated from each other. organic materials [33] a simple Schottky model would When they are brought together in equilibrium, the predict a depletion region of several μm, compared to Fermi levels align. As long as the work function of the typical diode thicknesses from a few 10 s to a few 100 s metal and the Fermi level of the semiconductor are not of nm. the same, this alignment includes movement of char- Therefore it may be more suitable to speak of most ges in the region close to the interface and leads to organic diodes as MIM diodes. At equilibrium, there is band bending. In the case of a metal work function no band bending at the Schottky contact and some smaller than the distance from the semiconductor band bending at the Ohmic contact due to hole injec- Fermi level to the vacuum, this leads to a depletion tion [35]. In forward bias (figure 2(a)) the hole is easily region close to the interface. Under forward bias holes injected from the anode (x=0) and extracted by the can move more or less unhindered from the semi- cathode (x=L). In reverse bias, shown in figure 2(b), conductor into the metal, while under reverse bias the hole would have to be injected over the significant there is a significant barrier to hole injection from the Schottky barrier from the cathode into the semi- metal, leading to rectifying behaviour of the diode. conductor and very little current flows. Many solution processed organic diodes are single Blom et al have studied the physics of single- layer devices due to the difficulty of multilayer solu- carrier organic MIM diodes in some detail, to a large tion coating or printing, and are based on a semi- extent as a means for better understanding of OLEDs conductor with primarily electron or hole conduction and OPV devices [35–37]. As seen in figure 2 above, properties. For this reason, the Schottky model is com- the bands in the intrinsic semiconductor are tilted at monly used in describing solution processed diodes. equilibrium with a built-in voltage equal to the differ- However, at least for organic diodes this model may be ence in electrode work functions, due to the alignment questionable. This begins with the differences in of the Fermi levels of the electrodes. If one contact is energy level structure and charge transport in organic Ohmic and one is rectifying, there will be a small or no semiconductors [34]. Energy states in organic semi- barrier for injection of charge carriers (in organics, conductors are far less localised than in conventional usually holes) in forward bias. The Schottky contact is semiconductors and it is common to use the terms chosen so that the barrier both for electron injection in ‘highest occupied molecular orbital’ (HOMO) and forward bias and hole injection in reverse bias is too ‘lowest unoccupied molecular orbital’ (LUMO) large for significant current to flow. In the common instead of valence and conduction band, respectively. operational region of organic MIM diodes, drift cur- Charge transport is also not ballistic but dominated by rent dominates, and a net (positive) space charge is hopping from one semi-localised energy state to built up within the device, which leads to an electric another. In addition, most of the time (we will discuss field within the semiconductor [35]. This space charge doped semiconductor devices below) organic semi- limits the current that can flow, i.e. the I–V behaviour conductors are used in an undoped, quasi-intrinsic is dominated by space charge limited current (SCLC). 2 Flex. Print. Electron. 2 (2017) 033001 T M Kraft et al Figure 2. Energy bands and directions of diffusion and drift current in an organic MIM diode (hole only), (a) thermal equilibrium and low forward bias diagram neglecting any band bending. (b) Equilibrium diagram with band bending at Ohmic contact due to hole injection included. Reprinted figure with permission from [35], Copyright 2013 by the American Physical Society. ⎡ ⎤ In the SCLC limit, the current is given by the expres- qNmj()-- VexpqV 1 p v b ⎣ ()kT ⎦ [ ] JP = .3() sion of Mott and Gurney 38 : ⎡ qj ⎤ L expb - exp qV ⎣ ()kT ()kT ⎦ 9 2 J = em()VV- bi ,1() 8 L3 Almost the same equation was derived earlier by Nguyen et al [40] in their analysis of two-carrier OLED where Vbi is the built-in voltage defined by the devices.