Diffraction Response of Photorefractive Polymers Over Nine Orders Of
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Chapter 9 Spintransport in Semiconductors
Chapter 9 Spintransport in Semiconductors Spinelektronik: Grundlagen und Anwendung spinabhängiger Transportphänomene 1 Winter 05/06 Spinelektronik Why are semiconductors of interest in spintronics? They provide a control of the charge – as in conventional microelectronic devices – but also of the spin, as we will see in the following. 9.0 Motivation "Simple" device in semiconductor physics: Field effect transistor (FET). Three-terminal device with source (S), gate (G) and drain (D). Viewgraph 2 "electric valve": current between source and drain controlled by gate voltage Vg. On- off ratio may be < 102 ⇒ much larger than in spin valves: ΔR/R < 100 % ⇒ factor of 2 Essential ingredient in a FET: two-dimensional electron gas (2-DEG) below the gate electrode. Transfer to magnetic systems: Spin transistor Viewgraph 3 Spinelektronik: Grundlagen und Anwendung spinabhängiger Transportphänomene 2 Winter 05/06 Spinelektronik proposed by Datta and Das in 1990 (in a different context). Idea: modulate a spin-polarized current by an electrical voltage, not only by affecting the charge distribution, but also directly the spin polarization P of the current. This is possible via the Rashba effect (see below). This idea has stimulated a tremendous amount of work over the last 15 years, which revealed the numerous difficulties that must be solved. Three major problems have to be addressed: • spin injection into the semiconductor • spin transport through the semiconductor channel • spin detection of the electrons at the end of the semiconductor channel 9.1 Semiconductor Properties – Reminder Semiconductors are insulators with a small band gap (ΔE ≤ 1.5 eV). For undoped semiconductors, the Fermi levels usually lies mid-gap. -
2020-22 GRADUATE CATALOG | Eastern New Mexico University
2020-22 TABLE OF CONTENTS University Notices..................................................................................................................2 About Eastern New Mexico University ...........................................................................3 About the Graduate School of ENMU ...............................................................................4 ENMU Academic Regulations And Procedures ........................................................... 5 Program Admission .............................................................................................................7 International Student Admission ...............................................................................8 Degree and Non-Degree Classification ......................................................................9 FERPA ................................................................................................................................. 10 Graduate Catalog Graduate Program Academic Regulations and Procedures ......................................................11 Thesis and Non-Thesis Plan of Study ......................................................................11 Graduation ..........................................................................................................................17 Graduate Assistantships ...............................................................................................17 Tuition and Fees ................................................................................................................... -
Homo Reciprocans: Survey Evidence on Behavioural Outcomes*
The Economic Journal, 119 (March), 592–612. Ó The Author(s). Journal compilation Ó Royal Economic Society 2009. Published by Blackwell Publishing, 9600 Garsington Road, Oxford OX4 2DQ, UK and 350 Main Street, Malden, MA 02148, USA. HOMO RECIPROCANS: SURVEY EVIDENCE ON BEHAVIOURAL OUTCOMES* Thomas Dohmen, Armin Falk, David Huffman and Uwe Sunde This article complements the experimental literature that has shown the importance of reciprocity for behaviour in stylised labour markets or other decision settings. We use individual measures of reciprocal inclinations in a large, representative survey and relate reciprocity to real world labour market behaviour and life outcomes. We find that reciprocity matters and that the way in which it matters is very much in line with the experimental evidence. In particular, positive reciprocity is associated with receiving higher wages and working harder. Negatively reciprocal inclinations tend to reduce effort. Negative reciprocity increases the likelihood of being unemployed. Reciprocity is an in-kind response to friendly or hostile acts. Homo economicus would never engage in reciprocal behaviour, where it does not advance material self-interest. An alternative model is homo reciprocans, for whom reciprocal behaviour is driven by reciprocal motivations: direct utility value is placed on rewarding or punishing (Rabin, 1993; Falk and Fischbacher, 2006). Conceptually, one can distinguish between positive reciprocity, the degree to which an individual rewards kind actions, and negative reci- procity, the extent to which the individual punishes unkind actions. Positive reciprocity has been demonstrated in experimental settings where contracts are incomplete and workers reciprocate generous wages with high effort, even though there is no way to enforce contracts (Fehr et al., 1993; Brown et al., 2004). -
When Reciprocity Becomes Back-Scratching: an Economic Inquiry
When reciprocity becomes back-scratching: An economic inquiry Cameron K Murray M.Sci. (Business), B.Sci. (Property Economics) A thesis submitted for the degree of Doctor of Philosophy at The University of Queensland in 2015 School of Economics Abstract This thesis reports four studies of a particular type of cooperation where the formation of coor- dinated groups through favour exchanges benefits the connected few at the expense of the many. This process is labelled back-scratching, and is a common feature of political decision-making where institutional powers allow for a large amount of discretion and the imposition of external- ities in situations where property rights are not well-defined. Chapter 1 introduces the concept of back-scratching in as a coordination game with negative externalities, providing a common framework within which to incorporate the studies that follow. The first study in Chapter 2 uses a natural experiment to quantify the gains from back-scratching in political decisions about value-enhancing land zoning. The effectiveness of a variety meth- ods used to support implicit favouritism are examined, including political donations, employing professional lobbyists, and investing in relationships. Using micro-level relationship data from multiple sources, characteristics of landowners of comparable sites inside and outside rezoned areas are compared. `Connected' landowners owned 75% of land inside rezoned areas, and only 12% outside, and captured $410 million in value gains, indicating a trade in favours amongst con- nected insiders. Marginal gains to all landowners of connections in our sample were $190 million. Engaging a professional lobbyist appears to be a substitute for having one's own connections. -
Holes and Electrons in Semiconductors Holes and Electrons Are the Types of Charge Carriers Accountable for the Flow of Current in Semiconductors
What are Semiconductors? Semiconductors are the materials which have a conductivity between conductors (generally metals) and non-conductors or insulators (such ceramics). Semiconductors can be compounds such as gallium arsenide or pure elements, such as germanium or silicon. Physics explains the theories, properties and mathematical approach governing semiconductors. Table of Content Holes and Electrons Band Theory Properties of Semiconductors Types of Semiconductors Intrinsic Semiconductor Extrinsic Semiconductor N-Type Semiconductor P-Type Semiconductor Intrinsic vs Extrinsic Applications FAQs Examples of Semiconductors: Gallium arsenide, germanium, and silicon are some of the most commonly used semiconductors. Silicon is used in electronic circuit fabrication and gallium arsenide is used in solar cells, laser diodes, etc. Holes and Electrons in Semiconductors Holes and electrons are the types of charge carriers accountable for the flow of current in semiconductors. Holes (valence electrons) are the positively charged electric charge carrier whereas electrons are the negatively charged particles. Both electrons and holes are equal in magnitude but opposite in polarity. Mobility of Electrons and Holes In a semiconductor, the mobility of electrons is higher than that of the holes. It is mainly because of their different band structures and scattering mechanisms. Electrons travel in the conduction band whereas holes travel in the valence band. When an electric field is applied, holes cannot move as freely as electrons due to their restricted movent. The elevation of electrons from their inner shells to higher shells results in the creation of holes in semiconductors. Since the holes experience stronger atomic force by the nucleus than electrons, holes have lower mobility. The mobility of a particle in a semiconductor is more if; Effective mass of particles is lesser Time between scattering events is more For intrinsic silicon at 300 K, the mobility of electrons is 1500 cm2 (V∙s)-1 and the mobility of holes is 475 cm2 (V∙s)-1. -
Paul Mitchell the School Jacksonville 4624 Town Crossing Drive, Suite 155 Jacksonville, FL 32246 (877) 298-1854 / (904) 713-2700
Paul Mitchell The School Jacksonville 4624 Town Crossing Drive, Suite 155 Jacksonville, FL 32246 (877) 298-1854 / (904) 713-2700 E-mail: [email protected] A copy of this catalog is provided to students at least one week prior to enrollment. Volume No. 105 Institution ID No. 1132 April 14, 2014 Melissa Jenkins PAUL MITCHELL THE SCHOOL JACKSONVILLE CATALOG 1 Table of Contents MISSION STATEMENT . 4 SCHOOL FACILITIES . 4 SCHOOL FACULTY . 4 ADMINISTRATION/OWNERSHIP . 4 COURSE DESCRIPTION (All courses are taught in English) ............................................... 4 PARKING . 5 NONDISCRIMINATION . 5 ANTI-HAZING POLICY . 5 ADMISSION REQUIREMENTS . 6 ADMISSION PROCEDURE . 6 ACCEPTANCE . 7 STATE LICENSING DISCLAIMER . 7 ENROLLMENT INFORMATION . 7 EDUCATION GOALS . 8 COST OF TUITION AND SUPPLIES . 9 SCHOLARSHIPS . 9 2014 CLASS START DATES . 10 CONSTITUTION DAY . 10 VOTER REGISTRATION . 10 DEFINITION OF CLOCK HOUR . 10 STUDENTS WHO WITHDRAW . 10 REENTRY STUDENTS . .. 11 TRANSFER STUDENTS . 11 TERMINATION POLICY . 11 DETERMINATION POLICY . 12 COSMETOLOGY COURSE OVERVIEW . 12 COSMETOLOGY COURSE OUTLINE . .. 12 BARBERING COURSE OVERVIEW . 13 COSMETOLOGY COURSE OUTLINE . .. 13 STATE OF FLORIDA REQUIREMENTS . 14 COURSE DESCRIPTION – COSMETOLOGY . 15 COURSE DESCRIPTION – BARBERING . 17 COSMETOLOGY AND BARBERING PROGRAM TESTING AND GRADING PROCEDURE . 18 PROGRAM MEASURABLE PERFORMANCE OBJECTIVES . .. 18 SAFETY PRECAUTIONS FOR THE BEAUTY INDUSTRY . 19 INDUSTRY REQUIREMENTS . 19 STUDENT SERVICES . 19 GRADUATION REQUIREMENTS IN COURSES . 20 GRADUATION, PLACEMENT, AND JOB OPPORTUNITIES . 20 STUDENT KIT DISCLAIMER . 20 PAUL MITCHELL THE SCHOOL JACKSONVILLE CATALOG 2 STUDENT KIT – Cosmetology 1200 hours . 21 STUDENT KIT – Barbering 1200 hours . 22 FINANCIAL AID – CONSUMER INFORMATION . 23 FEDERAL RETURN OF TITLE IV FUNDS POLICY . 30 TREATMENT OF TITLE IV FUNDS WHEN A STUDENT WITHDRAWS FROM A CLOCK-HOUR PROGRAM . -
Charge Density in Semiconductor Lecture-7
Charge density in Semiconductor Lecture-7 TDC PART -1 PAPER 1(GROUP B) Chapter -4 BY: DR. NAVIN KUMAR (ASSISTANT PROFESSOR) (GUEST FACULTY) Department of Electronics Charge density • Charge carrier density, also known as carrier concentration, denotes the number of charge carriers in per volume. In SI units, it is measured in m−3. As with any density, in principle it can depend on position. Charge density in semiconductor • Charge density is usually calculated in the extrinsic semiconductor, • i.e. the semiconductor with impurities such as p type and n type Mass action law • Addition of n-type impurities to a pure semiconductor results in reduction in the concentration of holes below the intrinsic value. • Addition of p-type impurity results in reduction in concentration of free electrons below the intrinsic value. • Theoretical analysis revels that at any given temperature, the product of the concentration 'n' of free electrons and concentration 'p' of holes is constant and is independent of the amount of doping by donor and acceptor impurities. Thus, • np = ni^2 ….(1) Charge Densities in Extrinsic Semiconductor • electron density n and hole density p are related by the mass action law: np = ni2. The two densities are also governed by the law of neutrality.(i.e. the magnitude of negative charge density must equal the magnitude of positive charge density) • ND and NA denote respectively the density of donor atoms and density of acceptor atoms • Total positive charge density equals (ND + p). • Total negative charge density equals (NA + n) • ND + p = NA + n ….(2) (law of neutrality) note; (n-type semiconductor with no acceptor doping i.e. -
Iron Workers Reciprocating Local Unions
Iron Workers Reciprocating Local Unions Local Union Health and Welfare Pension Annuity 1 A & B A & B Structural Iron Workers Local 1 Structural Iron Workers Local 1 Structural Iron Workers Local 1 Welfare Fund Pension Fund Pension and Annuity Fund 7700 Industrial Drive 7700 Industrial Drive 7700 Industrial Drive Forest Park, IL 60130 Forest Park, IL 60130 Forest Park, IL 60130 John Gardiner, Administrator John Gardiner, Administrator John Gardiner, Administrator Email: [email protected] Email: [email protected] Email: [email protected] Tel: 708-366-1188 Tel: 708-366-1188 Tel: 708-366-1188 Fax: 708-366-4809 Fax: 708-366-4809 Fax: 708-366-4809 1/1/83 1/1/83 05/01/01 Also signatory to: Iron Workers Mid-America Pension Fund 2350 East 170th Street Lansing, IL 60438 Joseph J. Burke, Administrator Email: [email protected] Tel: 708-474-9902 or 800-232-8029 Fax: 708-474-9982 1/1/1985 3 A & B A & B Iron Workers of Western Pennsylvania Benefit Iron Workers of Western Pennsylvania Benefit Iron Workers of Western Pennsylvania Benefit Plans Local 3 and 772 Plans Local 3 and 772 Plans Local 3 and 772 2201 Liberty Avenue, Room 203 2201 Liberty Avenue, Room 203 2201 Liberty Avenue, Room 203 Pittsburgh, PA 15222-4598 Pittsburgh, PA 15222-4598 Pittsburgh, PA 15222-4598 Jessica Schneider, Plan Manager Jessica Schneider, Plan Manager Jessica Schneider, Plan Manager Email: [email protected] Email: [email protected] Email: [email protected] Tel: 412-227-6740 Tel: 412-227-6740 Tel: 412-227-6740 Fax: 412-261-3816 Fax: 412-261-3816 Fax: 412-261-3816 1/1/83 1/1/83 10/10/91 6/3/2016 Page 1 of 59 Iron Workers Reciprocating Local Unions Local Union Health and Welfare Pension Annuity 5 A & B A & B Iron Workers Local 5 Welfare Iron Workers Local 5 Pension Mid-Atlantic States District Council Participating Fund Fund Locals Annuity Fund GEM Group GEM Group Lawrence C. -
Laser Interferometer and Reciprocity Calibration of Accelerometers Using the NIST Super Shaker
Submitted to: Third Inter. Conference on Vibration Measurements by Laser Techniques: Advances and Applications, June 16-19, Ancona, Italy. Laser Interferometer and Reciprocity Calibration of Accelerometers Using the NIST Super Shaker Bev Payne National Institute of Standards and Technology Automated Production Technology Division Gaithersburg, Maryland 20899 Abstract The development of the NIST Super Shaker permits calibration of accelerometers by two independent and absolute methods on the same shaker. Minimizing the uncertainty of reciprocity calibrations imposes strin- gent requirements for distortion and cross-axis motion. Laser interferometer calibrations require very low coupling between the shaker and the interferometer components. The design of the Super Shaker provides for very low distortion and cross-motion with very low mechanical coupling between the shaker and opti- cal components. The shaker is equipped with dual coils and two retractable magnets to provide for reci- procity measurements without attaching a driving shaker. These features enhance the convenience with which the Super Shaker can be used to perform both reciprocity and laser interferometer calibrations. This paper describes the shaker and calibration system and gives a comparison of calibration results from the two methods. Keywords: accelerometers, calibration, reciprocity, laser interferometer, uncertainty, shakers, exciters. 1. Introduction A new Super Shaker system for calibration of accelerometers at NIST was designed in 1993, and its initial testing was finished in 19951. A principal goal of this design is to reduce the uncertainties of accelerometer calibrations. This paper gives the results of additional testing and the implementation of two absolute calibration methods on the Super Shaker. The fringe-counting method uses the wavelength of a He-Ne laser light as a reference standard and the reciprocity method uses a set of standard masses as a reference standard. -
Current-Voltage Characteristics of Organic
CURRENT-VOLTAGE CHARACTERISTICS OF ORGANIC SEMICONDUCTORS: INTERFACIAL CONTROL BETWEEN ORGANIC LAYERS AND ELECTRODES A Thesis Presented to The Academic Faculty by Takeshi Kondo In Partial Fulfillment of the Requirements for the Degree Doctor of Philosophy in the School of Chemistry and Biochemistry Georgia Institute of Technology August, 2007 Copyright © Takeshi Kondo 2007 CURRENT-VOLTAGE CHARACTERISTICS OF ORGANIC SEMICONDUCTORS: INTERFACIAL CONTROL BETWEEN ORGANIC LAYERS AND ELECTRODES Approved by: Dr. Seth R. Marder, Advisor Dr. Joseph W. Perry School of Chemistry and Biochemistry School of Chemistry and Biochemistry Georgia Institute of Technology Georgia Institute of Technology Dr. Bernard Kippelen, Co-Advisor Dr. Mohan Srinivasarao School of Electrical and Computer School of Textile and Fiber Engineering Engineering Georgia Institute of Technology Georgia Institute of Technology Dr. Jean-Luc Brédas School of Chemistry and Biochemistry Georgia Institute of Technology Date Approved: June 12, 2007 To Chifumi, Ayame, Suzuna, and Lintec Corporation ACKNOWLEDGEMENTS I wish to thank Prof. Seth R. Marder for all his guidance and support as my adviser. I am also grateful to Prof. Bernard Kippelen for serving as my co-adviser. Since I worked with them, I have been very fortunate to learn tremendous things from them. Seth’s enthusiasm about and dedication to science and education have greatly influenced me. It is always a pleasure to talk with Seth on various aspects of chemistry and life. Bernard’s encouragement and scientific advice have always been important to organize my research. I have been fortunate to learn from his creative and logical thinking. I must acknowledge all the current and past members of Prof. -
Ph 3455/MSE 3255 the Hall Effect in a Metal and a P-Type Semiconductor
Ph 3455/MSE 3255 The Hall Effect in a Metal and a p-type Semiconductor Required background reading Tipler, Chapter 10, pages 478-479 on the Hall Effect Prelab Questions 1. A sample of copper of thickness 18 x 10-6 m is placed in a 0.25 T magnetic field. A current of 10 amps is flowing through the sample perpendicular to the magnetic field. A Hall voltage of -7 µV is measured under these conditions. Assuming these numbers, what is the measured Hall coefficient for copper? From the Hall coefficient, what is the density of charge carriers in copper, and how many charge carriers are provided, on the average, by each atom? 2. For the doped sample of p-type germanium that you will use in the lab, the density of holes is about 1015 cm-3. Assuming that the holes are the majority charge carrier in the material, what Hall voltage do you expect to measure when a sample of thickness 10-3 m is placed in a 0.25 T magnetic field with a current of 10 mA flowing through it perpendicular to the magnetic field? 3. Why is the measurement of the Hall voltage more difficult experimentally in the metal than in the doped semiconductor? What physical property of the materials causes this difference in difficulties? Background Read the pages 478-479 in your textbook (Tipler) on the Hall effect before reading this material. As discussed in your textbook, the Hall effect makes use of the qv x B Lorentz force acting on the charge carriers that contribute to the flow of electrical current in a material. -
Acts of Reciprocity: Analyzing Social Exchange in a University Theater for Social Change Project
W&M ScholarWorks Dissertations, Theses, and Masters Projects Theses, Dissertations, & Master Projects 2010 Acts of reciprocity: Analyzing social exchange in a university theater for social change project Nicole Birgit Cloeren William & Mary - School of Education Follow this and additional works at: https://scholarworks.wm.edu/etd Part of the Educational Methods Commons, Educational Sociology Commons, and the Higher Education Commons Recommended Citation Cloeren, Nicole Birgit, "Acts of reciprocity: Analyzing social exchange in a university theater for social change project" (2010). Dissertations, Theses, and Masters Projects. Paper 1550154040. https://dx.doi.org/doi:10.25774/w4-s4nc-j548 This Dissertation is brought to you for free and open access by the Theses, Dissertations, & Master Projects at W&M ScholarWorks. It has been accepted for inclusion in Dissertations, Theses, and Masters Projects by an authorized administrator of W&M ScholarWorks. For more information, please contact [email protected]. ACTS OF RECIPROCITY: ANALYZING SOCIAL EXCHANGE IN A UNIVERSITY THEATER FOR SOCIAL CHANGE PROJECT A Dissertation Presented to The Faculty of the School ofEducation The College of William and Mary in Virginia In Partial Fulfillment Of the Requirements for the Degree Doctor of Philosophy by Nicole Birgit Cloeren May 2010 ACTS OF RECIPROCITY: ANALYZING SOCIAL EXCHANGE IN A UNIVERSITY THEATER FOR SOCIAL CHANGE PROJECT by Nicole Birgit Cloeren Approved May 201 0 by Chairperson of Doctoral Committee du__~~k,.~ Monica D. Griffin, Ph.D. Pamela