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Investigation of Piezoelectric Ringing Frequency Response of Beta Barium Borate Crystals

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Investigation of Piezoelectric Ringing Frequency Response of Beta Barium Borate Crystals crystals Article Investigation of Piezoelectric Ringing Frequency Response of Beta Barium Borate Crystals Giedrius Sinkevicius 1,2,* and Algirdas Baskys 2 1 Department of Material Science and Electrical Engineering, Center for Physical Sciences and Technology, Sauletekio˙ av. 3, LT- 10257 Vilnius, Lithuania 2 Department of Computer Science and Communications Technologies, Vilnius Gediminas Technical University, Naugarduko st. 41, LT- 03227 Vilnius, Lithuania; [email protected] * Correspondence: [email protected]; Tel.: +370-620-81193 Received: 19 December 2018; Accepted: 15 January 2019; Published: 17 January 2019 Abstract: The piezoelectric ringing phenomenon in Pockels cells based on the beta barium borate crystals was analyzed in this work. The investigation results show that piezoelectric ringing is caused by multiple high voltage pulses with a frequency in the range from 10 kHz up to 1 MHz. Experimental investigation of frequency response and Discrete Fourier transformation was used for analysis. The method of piezoelectric ringing investigation based on the analysis of difference of real and simulated optical signals spectrums was proposed. The investigations were performed for crystals with 3 × 3 × 25 mm, 4 × 4 × 25 mm and 4 × 4 × 20 mm dimensions. It was estimated that piezoelectric ringing in the beta barium borate crystal with dimensions of 3 × 3 mm × 25 mm occurred at the 150, 205, 445, 600 and 750 kHz frequencies of high voltage pulses. Keywords: Pockels cell; piezo-electric ringing; beta barium borate 1. Introduction A wide variety of optical modulators are used in laser applications [1–7]. However, only modulators based on electro-optic and acousto-optic principles are used for high power laser system applications. The electro-optic modulation principle is based on the Pockels effect, which presents the change of refractive index in non-centrosymmetric crystals under the influence of an external electric field. The change in refractive index induces a polarization change of a beam that travels though the crystal of the Pockels cell. This feature allows us to use the Pockels cell as a voltage controlled half-wave plate [8]. Acousto-optic modulation principle is based on Debye-Sears effect combined with Bragg configuration. The mechanical oscillation of piezoelectric wafer on the side of the crystal creates pressure, which increase the refraction, diffraction and interference inside the crystal [8,9]. This effect allows us to employ the acousto-optic modulator as a beam deflector. The property of any optical modulator is the ability to let through or shut out the laser beam that travels through the modulator. The measure of this property for the electro-optic modulators is contrast ratio; for the acousto-optic modulators - diffraction efficiency. Electro-optical modulators contrast ratio varies from 1000:1 to 2000:1 [10–12] and acousto-optic modulators diffraction efficiency from 30 % to 80 % [4,13–15]. An essential parameter of optical modulators is the rise and the fall time of the modulator. The rise and fall time of electro-optical modulators can reach 10 ns [4,12] and it varies from 200 ns down to 56 ns for acousto-optic modulators [14,15]. It should be noted that the rise and fall time of the acousto-optic modulator depends on the sound velocity in the crystal and the waist diameter of the beam [14]. The rise and fall time of an electro-optical modulators based on the Pockels cell is defined by the rise Crystals 2019, 9, 49; doi:10.3390/cryst9010049 www.mdpi.com/journal/crystals Crystals 2019, 9, 49 2 of 10 and fall time of the high voltage pulse that is applied to the modulator. The required amplitude of the pulse for operation of any type of Pockels cell depends on the material, dimensions of the crystal and wavelength of the laser beam that travels through the Pockels cell crystal [16,17]. There are two types of Pockels cells: transverse and longitudinal [8]. For longitudinal Pockels cells, half-wave voltage (amplitude of pulse, at which the laser beam polarization has been rotated by 90◦) may vary from 4kV to 10 kV [18]. For transverse Pockels cells, half-wave voltage varies between 1 kV and 8 kV [19,20]. Pockels cell rise/fall time depends on two factors: capacitance of the crystal and applied voltage rise/fall time. In order to achieve a shorter duration of rise/fall time of the Pockels cell, it is necessary to decrease the values of these parameters. The capacitance is determined by the dimensions and material of the crystal; therefore, the main way for the reduction of the rise/fall time of Pockels cell is improvement of the electronics of the high voltage driver. There are only a few usable concepts for high voltage driver design: metal-oxide-semiconductor field-effect transistors (MOSFET) or bipolar avalanche transistors connected in series [21]. The high voltage drivers based on the MOSFETs connected in series provide the laser beam modulation frequency up to 1 MHz with the 30 ns rise/fall time of pulse and adjustable pulse width [22–27]. The bipolar avalanche high voltage drivers allow us to achieve rise time from 7 ns down to 240 ps [28–35]. However, the fall time of the pulse generated by the bipolar avalanche high voltage drivers may be 10 times longer than the rise time of the pulse. Another drawback is that practically, it is not possible to adjust the pulse width. The highest width of high voltage pulse is around 7 ns [35] and the highest achieved frequency is 200 kHz [28]. Pockels cells are characterized by higher contrast ratio and shorter duration of rise/fall time in comparison with the acousto-optic modulators. However, the high voltage pulses with the short rise/fall duration can cause piezoelectrical ringing that induces acoustic waves in Pockels cell crystal. If acoustic waves are not suppressed, they are reflected back inside of the Pockels cell crystal. This phenomenon introduces the elasto-optic effect, which can cause the reduction of Pockels cells contrast ratio [11,36–39]. This effect has to be investigated in order to find the ways how to reduce the impact of the piezoelectric ringing on the contrast ratio. The beta barium borate (BBO) crystals are usually used for the implementation of Pockels cells. There are many works dedicated to the analysis of effects in BBO crystals, e.g., [11,40–43]. However, the piezoelectric ringing phenomenon in Pockels cells with BBO crystals was mentioned in merely one research [11] and there are none dedicated to the analysis of high voltage pulse frequency impact on piezoelectric ringing phenomenon. The investigation results of piezoelectric ringing of the Pockels cells with BBO crystals that operate in high voltage pulse frequency range from 10 kHz up to 1 MHz are presented. The method of the piezoelectric ringing investigation based on the spectrum analysis of difference of real and simulated optical signals is proposed. The investigations are performed for the crystals with 3 × 3 × 25 mm, 4 × 4 × 25 mm and 4 × 4 × 20 mm dimensions. 2. Investigation Procedure Pockels cells based on the BBO crystals were investigated experimentally. A block diagram of simplified single pass contrast ratio measurement setup is given in Figure1. A 1064 nm wavelength diode-pumper solid state (DPSS) laser with 1.5 mm beam diameter and 2 W power was used in this setup. Half-wave plate with antireflective (AR) coating at 1064 nm was used to alter beam polarization of the DPSS laser. Glan-Taylor polarizing prism was selected for its high extinction ratio, which is higher than 100,000:1 [44]. This prism is used in order to let through only the p-polarized beam. The optical attenuator in combination with half-wave plate was employed in order to adjust the power and to avoid the saturation of photodetector. Laser beam from the first Glan-Taylor polarizing prism travels through the Pockels cell and after that to the second Glan-Taylor prism. The light intensity was detected via a high-speed Si photodetector (DET10A/M, Thorlabs, Newton, NJ, United States, 2013). It must be noted that the phases of the first and the second Glan-Taylor polarizing prisms were mutually turned by 90◦, i.e., the second Glan-Taylor polarizing prism was used as an analyzer. Crystals 2019, 9, 49 3 of 10 Crystals 2019, 9 FOR PEER REVIEW 3 PULSE PERSONAL GENERATOR COMPUTER DPSS LASER HIGH VOLTAGE HIGH VOLTAGE OSCILLOSCOPE POWER SUPPLY DRIVER MIRROR HALF-WAVE GLAN-TAYLOR POCKELS GLAN-TAYLOR PHOTO DETECTOR PLATE PRISM CELL PRISM FigureFigure 1. 1. SingleSingle pass pass contrast contrast ratio ratio measurement measurement setup, setup, where where DPSS DPSS - - diode-pumper diode-pumper solid solid state. state. BipolarBipolar high voltagevoltage powerpower supply supply (PS2-60-1.4, (PS2-60-1.4, Eksma Eksma Optics, Optics, Vilnius, Vilnius, Lithuania, Lithuania, 2015) 2015) was used.was used.It provided It provided positive positive and negative and negative output output voltage voltage 1 kV to 1 1.4kV kV.to 1.4 A potentialkV. A potential difference difference of 2.8 kV of was2.8 kVpossible was withpossible this device.with this Voltage device. was Voltage supplied was to the supplied bipolar highto the voltage bipolar driver high (DPD-1000-2.9-Al, voltage driver (DPD-1000-2.9-Al,Eksma Optics, Vilnius, Eksma Lithuania, Optics, Vilnius, 2015), whichLithuania, produced 2015), which high voltage produced pulses high and voltage operated pulses on and the operatedMOSFET on connected the MOSFET in series connected principle. in series Pulse princi widthple. adjustment Pulse width from adjustment 100 ns up tofrom 5 µ s100 was ns achieved up to 5 μwiths was this achieved driver with model. this Highdriver voltage model.
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