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Solid-State Transmitters for IFF and SSR Systems

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Solid-State Transmitters for IFF and SSR Systems COVER FEATURE INVITED PAPER Solid-State Transmitters for IFF and SSR Systems John Walker and James Custer Integra Technologies Inc. dentify Friend or Foe (IFF) and Secondary is at 1030 MHz, to the aircraft. On receipt of Surveillance Radar (SSR) systems are, from this pulse the aircraft on-board transponder Ia hardware point of view, essentially the sends back a reply at a different frequency of same system although the application is differ- 1090 MHz which, if it is a friendly aircraft, will ent. The radar systems developed in World War contain a coded message that identifies it as a II could determine the range and bearing of air- friendly aircraft. Thus IFF systems are basical- craft but could not distinguish between friendly ly military in nature. Further details about IFF and hostile planes. IFF systems were developed and SSR systems can be found in1-3. at the same time to solve that deficiency. Civil aviation has a different need to the The basic concept is illustrated in Figure military, requiring information such as the air- 1. Although today’s systems are digital rather craft’s flight number, its altitude etc. The basic than analog and the frequencies used are dif- difference between the military and civil uses ferent, the basic concept shown in Figure 1 of the IFF system is the information that is sent has not changed. A ground-based transmitter back to the ground station in the return pulse sends out an interrogating pulse, which today at 1090 MHz. Civil aviation labels this system a Secondary Surveillance Radar, but this is a misnomer since the returned pulse contains a IFF data stream containing information about the flight, so in reality it is a communication system Transponder Interrogator Pulse rather than a radar system. Nevertheless, it is IFF Transponder Pulse universally termed an SSR and so this nomen- Antenna clature will be used in this article. Figure 2 Radar Transmitter Pulse shows a typical SSR system co-located with the eturn Echo R S-Band primary radar system which is used to detect any object in the path of the radar beam. Antenna SSR message formats have evolved over the years and the system that is in the most wide- From spread use today is the Mode S version which Radar Radar XMTR Receiver transmits a train of 128 pulses of 0.5 µs on, 0.5 Responder µs off with a long term duty cycle of 1 percent. Interrogator As far as transistors are concerned, this is a very benign pulse train from a thermal point Radar “A” Scope Narrow Wide Emergency of view and any transistor technology can eas- ily withstand this. However, a newer version s Fig. 1 Principle of an IFF system. Source: Radar Bulletin 8A, U.S. Navy, 1950. of Mode S is being implemented called Ex- tended Length Message (ELM) which uses a Reprinted with permission of MICROWAVE JOURNAL® from the January 2016 issue. ©2016 Horizon House Publications, Inc. CoverFeature transistors are often of transistors. It also only requires a operated at about 2 single positive supply voltage. dB into compression BJTs also have one other extremely which helps achieve important attribute that is not enjoyed high efficiency. by either GaN HEMTs or LDMOS The following transistors. BJTs are operated in Class is an assessment of C so that when there is no applied RF the merits and dis- pulse the transistor does not pass any advantages of sili- DC current. Consequently, BJT-based con bipolar, silicon SSRs inherently emit almost zero shot LDMOS and gal- noise in the off period. LDMOS and lium nitride HEMT GaN HEMTs, on the other hand, are technologies for this always biased Class A/B and so emit application. shot noise in the off-period which is s Fig. 2 Airport co-located primary and secondary radar system. injected into the receiver along with The SSR radar antenna is at the top with the S-Band antenna immediately beneath it. (Photo courtesy of Shutterstock.com). SILICON BIPOLAR the returned signal from the aircraft TRANSISTORS transponder causing receiver de-sen- Early solid-state sitization. Black SSR systems used The required quiescent current Red Si bipolar junction for LDMOS and GaN is roughly pro- transistors (BJT) portional to the output power of the C3 as this was the only transistor so it is more of an issue for transistor technol- the kW-level transistors used in SSR ogy available and systems than in low power systems. C2 BJT-based SSRs are The solution to this problem is to use still being manufac- more complex DC circuitry which IB1011S1500 LOT#-SER# INTEGRA tured today. In fact, shuts down the transistor completely the standard mode in the off-period but which turns the S waveform3 suits gate bias on ahead of the RF pulse5. C1 the characteristics BJTs can also be designed for the of BJTs very well be- ELM version of mode S, but the maxi- cause the thermally mum output power drops to about 500 benign waveform W due to thermal limitations. This enables full advan- means that a minimum of 8 BJTs are needed for a complete SSR. This has s Fig. 3 Circuit for IB1011S1500 1.5 kW Si bipolar junction tage to be taken of transistor for SSR applications. the high power den- serious size and cost implications for sity capability of a the system. Thus, although BJT tech- 48 pulse burst of 32 µs on, 18 µs off BJT. With a requirement for around 4 nology is well-proven and extremely (i.e., 67 percent duty cycle within the kW of output power, the ‘holy grail’ for reliable it is unlikely that any new sys- pulse) with a long-term duty cycle of an SSR manufacturer has been a tran- tems will be designed using BJTs. 6.4 percent. sistor with an output power of at least BJTs also have three other disad- As far as the transistor is concerned 1 kW since then it is easy to combine vantages, namely they use environ- the off period during the pulse burst four of these devices to achieve 4 kW. mentally unfriendly BeO packages is not long enough for the transistor In fact, a little more than 1 kW is which are also expensive, and they to fully cool down so from a thermal needed to allow for losses in the com- have much lower gain than either perspective the ELM Mode S pulse biner and the insertion loss of the LDMOS or GaN HEMTs which train looks like a 2.4 ms pulse with isolator used at the output to protect means that more gain stages are need- an overall duty cycle of 6.4 percent. the transistor from a high VSWR mis- ed in the amplifier which, of course, This very long effective pulse means match. BJTs fulfill this requirement adds to size and cost. Finally, the that the transistor is running close to nicely with devices up to 1.5 kW4. BJTs VSWR withstand capability for a 1 CW conditions and many of the early for this application are always operated kW device is normally specified at 3:1 generations of high-power pulsed RF in Class C mode with no applied DC which means that the device needs to transistors cannot be run CW without voltage to the base-emitter junction be protected by a high power isolator substantial de-rating. and the typical efficiency is about 60 to which also adds to the overall cost. This has necessitated the redesign 65 percent for a 1 kW device. of many SSR systems. The typical BJTs have the simplest RF circuitry SILICON LDMOS output power of a SSR transmitter of any technology. Figure 3 shows the Silicon LDMOS became the main is around 4 kW for the ground sta- circuit for the 1.5 kW 1030 MHz BJT, technology for communications and tion while the airborne transponder is just two capacitors are used on the basestations in the mid 1990s, and lower power at 1 to 2 kW. There is no PCB plus a large external reservoir it has since become widely accepted requirement for linearity and so the capacitor that is common to all types for L-Band avionics and radar appli- CoverFeature cations, not least because it can be tion occurs, i.e., the manufactured in a standard 8" CMOS transistor has zero Gate Source Oxide Drain wafer fabrication facility resulting on-resistance or + – in lower cost than bipolar RF power knee voltage. Thus N N transistors. Also, kW-level LDMOS the transistor needs P* Sinker p Well transistors are readily available that to see a load of 1.25 p epi Layer can withstand a 20:1 VSWR mismatch V but the RF path and this leads to a further system-lev- from the plane of p* Substrate el cost reduction since the expensive the current genera- isolator that needs to be added at the tor to the external output of a bipolar transistor amplifier 50 V load is bound s Fig. 4 Parasitic bipolar transistor inside every LDMOS device. can be eliminated. to have some series A 1 kW LDMOS transistor typi- resistance, even 0.1 V would cause the di cally has about 10 dB more gain than efficiency to be reduced to 90 percent V = L the corresponding BJT device so fewer of its theoretical maximum value, for dt driver stages are needed leading to example, the ideal Class B efficiency further cost and size reduction. 1 kW would fall to 70 percent maximum. LDMOS transistors are available in both All of the above efficiency-reduc- single-ended and push-pull formats.
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