Article Phosphor-Free InGaN White Light Emitting Diodes Using Flip-Chip Technology Ying-Chang Li 1, Liann-Be Chang 1,2,3,*, Hou-Jen Chen 1, Chia-Yi Yen 1, Ke-Wei Pan 1, Bohr-Ran Huang 4, Wen-Yu Kuo 4, Lee Chow 5, Dan Zhou 6 and Ewa Popko 7 1 Graduate Institute of Electro-Optical Engineering, Chang Gung University, Taoyuan 333, Taiwan;
[email protected] (Y.-C.L.);
[email protected] (H.-J.C.);
[email protected] (C.-Y.Y.);
[email protected] (K.-W.P.) 2 Department of Otolaryngology-Head and Neck Surgery, Chang Gung Memorial Hospital, Taoyuan 333, Taiwan 3 Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 243, Taiwan 4 Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan;
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[email protected] (W.-Y.K.) 5 Department of Physics, University of Central Florida, Orlando, FL 32816, USA;
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[email protected]; Tel.: +886-3-211-8800 Academic Editor: Durga Misra Received: 9 February 2017; Accepted: 17 April 2017; Published: 20 April 2017 Abstract: Monolithic phosphor-free two-color gallium nitride (GaN)-based white light emitting diodes (LED) have the potential to replace current phosphor-based GaN white LEDs due to their low cost and long life cycle.