Graphene Growth and Device Integration
INVITED PAPER Graphene Growth and Device Integration This paper describes one of the emerging methods for growing grapheneVthe chemical vapor deposition methodVwhich is based on a catalytic reaction between a carbon precursor and a metal substrate such as Ni, Cu, and Ru, to name a few. By Luigi Colombo, Fellow IEEE, Robert M. Wallace, Fellow IEEE,andRodneyS.Ruoff ABSTRACT | Graphene has been introduced to the electronics devices in order to exceed the performance characteristics community as a potentially useful material for scaling elec- of current device applications as well as developing new tronic devices to meet low-power and high-performance devices, especially for flexible electronics, transparent targets set by the semiconductor industry international road- electrodes for displays and touch screens, photonic map, radio-frequency (RF) devices, and many more applica- applications, energy generation, and batteries [3], [12], tions. Growth and integration of graphene for any device is [13]. The first graphene films were only a few tens of challenging and will require significant effort and innovation to micrometers on the side and so the principal first issue in address the many issues associated with integrating the making graphene devices a reality is the development of a monolayer, chemically inert surface with metals and dielec- graphene of sufficient quality and size to meet the basic trics. In this paper, we review the growth and integration of physical and electronic properties. Since the isolation of graphene for simple field-effect transistors and present graphene from natural graphite, a number of techniques physical and electrical data on the integrated graphene with and processes have been studied and are in development to metals and dielectrics.
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