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Invensense Fabless Model for the MEMS Industry

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Invensense Fabless Model for the MEMS Industry InvenSense Fabless Model for the MEMS Industry HKSTP Symposium – Aug 2016 InvenSense, Inc. Proprietary InvenSense, Inc. Proprietary Outline • MEMS Market • InvenSense • CMOS-MEMS Integration • InvenSense Shuttle Program and Process InvenSense, Inc. Proprietary MEMS MARKET InvenSense, Inc. Proprietary MEMS Markets by Applications $18,000 $16,000 $14,000 $12,000 Automotive $10,000 Consumer $8,000 Industrial US$M $6,000 Telecom $4,000 $2,000 $0 2012 2013 2014 2015 2016 2017 2018 2019 Yole Devéloppement “Status of the MEMS Industry” April 2014 InvenSense, Inc. Proprietary MEMS for Internet of Things (IoT) Market $1,200 $1,000 $800 $600 US$M $400 $200 $0 2013 2014 2015 2016 2017 2018 2019 Yole Devélopement “Status of the MEMS Industry” April 2014 InvenSense, Inc. Proprietary Ambient Computing – Internet of Things AlwaysOn, and Intuitively Interactive Apps and Services Location + Activity + Time + Environment Sensor Sensor wearabl e energy control security sports InvenSense, Inc. Proprietary 15 INVENSENSE InvenSense, Inc. Proprietary $372 $253 $209 $153 ($ in Millions) $97 $80 $29 $3 $8 FY2007 FY2008 FY2009 FY2010 FY2011 FY 2012 FY2013 FY2014 FY2015 Founded Headquarters Cash Position 11.16.11 Employees 2003 San Jose, CA $242M (As of 28 June 2015) NYSE: INVN 665 Note: Company fiscal year ends Sunday closest to March 31. InvenSense, Inc. Proprietary Calgary, Canada Bratislava, Slovakia Grenoble, France San Jose, Calif Boston, Mass Milan, Italy Seoul, Korea Yokohama, Japan Shenzhen, China Shanghai, China Hsinchu, Taiwan 9 InvenSense, Inc. Proprietary Select Customers Other/ IoT 10% Imaging 12% FY15 Mobile 78% 10 InvenSense, Inc. Proprietary Unique Technology & Intellectual Property MEMS Microphones MEMS Sensors Sensor Fusion Fabrication Stabilization Navigation Fingerprint Authentication 11 InvenSense, Inc. Proprietary Fabless Business Model CMOS-MEMS Wafer Sort Packaging Proprietary Testing ASE TSMC InvenSense Amkor InvenSense GlobalFoundries Lingsen • 1 Billion Unit Capacity • Super Efficient Supply Chain • Easy Fulfillment of Short Lead Time Upsides 12 InvenSense, Inc. Proprietary VALUE OF WAFER-LEVEL CMOS-MEMS INTEGRATION InvenSense, Inc. Proprietary Wafer-level Integration Advantages Low Parasitics Minimize routing and external interconnect Wafer Level Sealing / Packaging Wafer Level Testing Designed for Test InvenSense, Inc. Proprietary Semiconductor Manufacturing Flow for MEMS CMOS–MEMS Singulation Final Test Wafer Sort Assembly InvenSense Wafer Integrated (e-test) Process TSMC Chip 1 chip 15 CMOS-MEMS Wafer Sort Packaging FT & Ship CMOS Wafer WAT CMOS Singulation Final Test Foundry 1 only ASIC Chip Traditional Assembly MEMS Multi-Chip Process MEMS Wafer Singulation MEMS WAT Foundry 2 MEMS Chip InvenSense, Inc. Proprietary Applications Benefiting from CMOS Integration High Sensitivity • Low signal and low noise requirement High Complexity • Large arrays and closed-loop control High Integration • Sensor fusion and high-density SoC Low Cost and Small Size • Mobile devices and Internet of Things • Implantable Sensors InvenSense, Inc. Proprietary INVENSENSE SHUTTLE InvenSense, Inc. Proprietary Challenges for MEMS Product Development • “One product - one process” increases barrier to entry Fabrication • Find foundry able and willing to bring up new process • Fighting both design and process simultaneously Development • Need for fast design iterations to keep up with market • New start ups need $50M-$70M, 7+ years to profit • Over 50% of costs are in package and test Production • Establish high yield and quality • Establish reliable supply chain to deliver high quality at low cost • Extend and expand product base Growth • Maintain competitiveness - add more value and lower cost InvenSense, Inc. Proprietary InvenSense Shuttle Objectives Offer a proven and high volume CMOS-MEMS platform for MEMS fabrication Speed up development cycle and time to commercialization Bring the “fabless CMOS” scalable production model to MEMS industry InvenSense, Inc. Proprietary InvenSense Shuttle Payoff • Faster development cycle by focusing on innovative MEMS designs and not fabrication Innovators • Faster and lower cost development cycles • Collaborate on new ideas and opportunities • Building a closer relationship with innovators InvenSense • Potential royalty revenue • More innovations in MEMS • More standardization in the industry Market InvenSense, Inc. Proprietary InvenSense Shuttle Processes • Standard (SOI) Shuttle – Process used on InvenSense inertial sensors – SOI MEMS integrated with 0.18um CMOS – Suitable for: Inertial, Resonators, Pressure, RF • Piezo Shuttle – Extension of standard process to piezo (AlN) – AlN + Si MEMS integrated with 0.18um CMOS – Suitable for: RF, Ultrasound, IR, Timing, Audio InvenSense, Inc. Proprietary SOI Shuttle Process Overview • Single-Crystal Si MEMS Structural layer • DRIE structure definition MEMS • No release etch requirement • Aluminum-Germanium wafer bond • 0.18 mm Process CMOS • High voltage LDMOS (up to 24v) • 6 Metal layers MEMS Anchored to MEMS Anchored to CMOS Contact handle only handle and CMOS Moveable Upper MEMS Cavity Wire-Bond Pad Bottom Cavity in CMOS Electrode to interact with MEMS Eutectic Bond CMOS Wafer CMOS Top Metal Device Layer Handle Wafer IMD+Pass. Germanium Buried Oxide Top Aluminum InvenSense, Inc. Proprietary Piezo Shuttle Process Overview • AlN + Silicon structural layer • Top and Bottom piezo electrodes MEMS • Port opening to expose MEMS to environment • TCF compensation options • Aluminum-Germanium wafer bond • 0.18 mm Process CMOS • High voltage LDMOS (up to 24v) • 6 Metal layers MEMS wafer Oxide Al Device layer IMD CMOS wafer AlN Mo Ge InvenSense, Inc. Proprietary Standard Shuttle Process Flow InvenSense, Inc. Proprietary Piezo Shuttle Process Flow MEMS wafer Oxide Al Device layer IMD CMOS wafer AlN Mo Ge 25 InvenSense, Inc. Proprietary SAMPLE SHUTTLE PROJECTS InvenSense, Inc. Proprietary Project: Mode-Reversal FM Gyro Collaborators: D. Horsley, B. Boser UC Davis/Berkeley Process: SOI 27 InvenSense, Inc. Proprietary Project: CMOS-Integrated High- Frequency Resonators Collaborators: T. Kenny, B. Murmann Stanford University Process: SOI 28 InvenSense, Inc. Proprietary Project: Nano-Power Pressure Sensor Collaborators: S. Gambini University of Melbourne Process: SOI 29 InvenSense, Inc. Proprietary Shuttle Projects: IR Sensor Collaborators: Mina Rais-Zadeh University of Michigan Process: Piezo IR on IR off 30 InvenSense, Inc. Proprietary Projects: Ultrasonic Fingerprint Sensor Collaborators: D. Horsley, B. Boser UC Davis/Berkeley Process: Piezo Fingerprint (optic) Fingerprint (ultrasonic) mV 4 25 3 2 20 1 0 15 -1 -2 10 Lateral distance - y (mm) y - distance Lateral -3 5 -4 -5 -4 -3 -2 -1 0 1 2 3 4 5 Lateral distance - x (mm) 31 InvenSense, Inc. Proprietary INVENSENSE SHUTTLE PROGRAM InvenSense, Inc. Proprietary Summary InvenSense Shuttle • Brings the CMOS fabless model to MEMS industry • Increases MEMS Value through system integration • Enables revolutionary new Smart MEMS products • Opens world class foundries to MEMS innovators • Reduces time to market • Next Shuttle tapes out in December 2016 • For More Information – Contact us: [email protected] – Register on NF Shuttle Web Site: http://www.invensense.com/invensense- shuttle/login/ InvenSense, Inc. Proprietary Thank You InvenSenseInvenSense, Inc. Company Inc. Proprietary Confidential .
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