InvenSense Fabless Model for the MEMS Industry

HKSTP Symposium – Aug 2016

InvenSense, Inc. Proprietary InvenSense, Inc. Proprietary Outline

• MEMS Market • InvenSense • CMOS-MEMS Integration • InvenSense Shuttle Program and Process

InvenSense, Inc. Proprietary MEMS MARKET

InvenSense, Inc. Proprietary MEMS Markets by Applications

$18,000

$16,000

$14,000

$12,000 Automotive

$10,000 Consumer

$8,000 Industrial US$M $6,000 Telecom

$4,000

$2,000

$0 2012 2013 2014 2015 2016 2017 2018 2019

Yole Devéloppement “Status of the MEMS Industry” April 2014

InvenSense, Inc. Proprietary MEMS for Internet of Things (IoT) Market

$1,200

$1,000

$800

$600

US$M $400

$200

$0 2013 2014 2015 2016 2017 2018 2019

Yole Devélopement “Status of the MEMS Industry” April 2014

InvenSense, Inc. Proprietary Ambient Computing – Internet of Things

AlwaysOn, and Intuitively Interactive Apps and Services

Location + Activity + Time + Environment

Sensor

Sensor

wearabl e energy control security

sports

InvenSense, Inc. Proprietary 15 INVENSENSE

InvenSense, Inc. Proprietary $372

$253

$209

$153

($ ($ inMillions) $97 $80

$29 $3 $8

FY2007 FY2008 FY2009 FY2010 FY2011 FY 2012 FY2013 FY2014 FY2015

Founded Headquarters Cash Position 11.16.11 Employees 2003 San Jose, CA $242M (As of 28 June 2015) NYSE: INVN 665

Note: Company fiscal year ends Sunday closest to March 31. InvenSense, Inc. Proprietary Calgary, Canada Bratislava, Grenoble, San Jose, Calif Boston, Mass Milan, Seoul, Korea Yokohama, Shenzhen,

Shanghai, China Hsinchu, Taiwan

9 InvenSense, Inc. Proprietary Select Customers

Other/ IoT 10% Imaging 12%

FY15

Mobile 78%

10 InvenSense, Inc. Proprietary Unique Technology & Intellectual Property

MEMS Microphones

MEMS Sensors Sensor Fusion

Fabrication

Stabilization Navigation

Fingerprint Authentication

11 InvenSense, Inc. Proprietary Fabless Business Model

CMOS-MEMS Wafer Sort Packaging Proprietary Testing

ASE TSMC InvenSense Amkor InvenSense GlobalFoundries Lingsen

• 1 Billion Unit Capacity • Super Efficient Supply Chain • Easy Fulfillment of Short Lead Time Upsides

12 InvenSense, Inc. Proprietary VALUE OF WAFER-LEVEL CMOS-MEMS INTEGRATION

InvenSense, Inc. Proprietary Wafer-level Integration Advantages

Low Parasitics

Minimize routing and external interconnect

Wafer Level Sealing / Packaging

Wafer Level Testing

Designed for Test

InvenSense, Inc. Proprietary Semiconductor Manufacturing Flow for MEMS

CMOS–MEMS Singulation Final Test Wafer Sort Assembly InvenSense Wafer Integrated Process (e-test) 1 chip TSMC Chip

15

CMOS-MEMS Wafer Sort Packaging FT & Ship

CMOS Wafer WAT CMOS Singulation Final Test Foundry 1 only ASIC Chip Traditional Assembly MEMS Multi-Chip Process MEMS Wafer Singulation MEMS WAT Foundry 2 MEMS Chip

InvenSense, Inc. Proprietary Applications Benefiting from CMOS Integration

High Sensitivity • Low signal and low noise requirement

High Complexity • Large arrays and closed-loop control

High Integration • Sensor fusion and high-density SoC

Low Cost and Small Size • Mobile devices and Internet of Things • Implantable Sensors

InvenSense, Inc. Proprietary INVENSENSE SHUTTLE

InvenSense, Inc. Proprietary Challenges for MEMS Product Development

• “One product - one process” increases barrier to entry Fabrication • Find foundry able and willing to bring up new process

• Fighting both design and process simultaneously Development • Need for fast design iterations to keep up with market • New start ups need $50M-$70M, 7+ years to profit

• Over 50% of costs are in package and test Production • Establish high yield and quality • Establish reliable supply chain to deliver high quality at low cost

• Extend and expand product base Growth • Maintain competitiveness - add more value and lower cost

InvenSense, Inc. Proprietary InvenSense Shuttle Objectives

Offer a proven and high volume CMOS-MEMS platform for MEMS fabrication

Speed up development cycle and time to commercialization

Bring the “fabless CMOS” scalable production model to MEMS industry

InvenSense, Inc. Proprietary InvenSense Shuttle Payoff

• Faster development cycle by focusing on innovative MEMS designs and not fabrication Innovators • Faster and lower cost development cycles

• Collaborate on new ideas and opportunities • Building a closer relationship with innovators InvenSense • Potential royalty revenue

• More innovations in MEMS • More standardization in the industry Market

InvenSense, Inc. Proprietary InvenSense Shuttle Processes

• Standard (SOI) Shuttle – Process used on InvenSense inertial sensors – SOI MEMS integrated with 0.18um CMOS – Suitable for: Inertial, Resonators, Pressure, RF

• Piezo Shuttle – Extension of standard process to piezo (AlN) – AlN + Si MEMS integrated with 0.18um CMOS – Suitable for: RF, Ultrasound, IR, Timing, Audio

InvenSense, Inc. Proprietary SOI Shuttle Process Overview

• Single-Crystal Si MEMS Structural layer • DRIE structure definition MEMS • No release etch requirement • Aluminum-Germanium wafer bond

• 0.18 mm Process CMOS • High voltage LDMOS (up to 24v) • 6 Metal layers

MEMS Anchored to MEMS Anchored to CMOS Contact handle only handle and CMOS Moveable Upper MEMS Cavity Wire-Bond Pad

Bottom Cavity in CMOS

Electrode to interact with MEMS Eutectic Bond

CMOS Wafer CMOS Top Metal Device Layer Handle Wafer

IMD+Pass. Germanium Buried Oxide Top Aluminum InvenSense, Inc. Proprietary Piezo Shuttle Process Overview

• AlN + Silicon structural layer • Top and Bottom piezo electrodes MEMS • Port opening to expose MEMS to environment • TCF compensation options • Aluminum-Germanium wafer bond

• 0.18 mm Process CMOS • High voltage LDMOS (up to 24v) • 6 Metal layers

MEMS wafer Oxide Al Device layer IMD CMOS wafer AlN Mo Ge

InvenSense, Inc. Proprietary Standard Shuttle Process Flow

InvenSense, Inc. Proprietary Piezo Shuttle Process Flow

MEMS wafer Oxide Al Device layer IMD CMOS wafer AlN Mo Ge

25 InvenSense, Inc. Proprietary SAMPLE SHUTTLE PROJECTS

InvenSense, Inc. Proprietary Project: Mode-Reversal FM Gyro

Collaborators: D. Horsley, B. Boser UC Davis/Berkeley

Process: SOI

27 InvenSense, Inc. Proprietary Project: CMOS-Integrated High- Frequency Resonators

Collaborators: T. Kenny, B. Murmann Stanford University

Process: SOI

28 InvenSense, Inc. Proprietary Project: Nano-Power Pressure Sensor

Collaborators: S. Gambini University of Melbourne

Process: SOI

29 InvenSense, Inc. Proprietary Shuttle Projects: IR Sensor

Collaborators: Mina Rais-Zadeh University of Michigan

Process: Piezo

IR on

IR off

30 InvenSense, Inc. Proprietary Projects: Ultrasonic Fingerprint Sensor

Collaborators: D. Horsley, B. Boser UC Davis/Berkeley

Process: Piezo

Fingerprint (optic) Fingerprint (ultrasonic) mV 4 25 3

2 20 1

0 15

-1

-2 10 Lateral distance - y (mm) y - distance Lateral -3 5 -4 -5 -4 -3 -2 -1 0 1 2 3 4 5 Lateral distance - x (mm)

31 InvenSense, Inc. Proprietary INVENSENSE SHUTTLE PROGRAM

InvenSense, Inc. Proprietary Summary

InvenSense Shuttle • Brings the CMOS fabless model to MEMS industry • Increases MEMS Value through system integration • Enables revolutionary new Smart MEMS products • Opens world class foundries to MEMS innovators • Reduces time to market

• Next Shuttle tapes out in December 2016 • For More Information – Contact us: [email protected] – Register on NF Shuttle Web Site: http://www.invensense.com/invensense- shuttle/login/

InvenSense, Inc. Proprietary Thank You

InvenSenseInvenSense, Inc. Company Inc. Proprietary Confidential