InvenSense Fabless Model for the MEMS Industry
HKSTP Symposium – Aug 2016
InvenSense, Inc. Proprietary InvenSense, Inc. Proprietary Outline
• MEMS Market • InvenSense • CMOS-MEMS Integration • InvenSense Shuttle Program and Process
InvenSense, Inc. Proprietary MEMS MARKET
InvenSense, Inc. Proprietary MEMS Markets by Applications
$18,000
$16,000
$14,000
$12,000 Automotive
$10,000 Consumer
$8,000 Industrial US$M $6,000 Telecom
$4,000
$2,000
$0 2012 2013 2014 2015 2016 2017 2018 2019
Yole Devéloppement “Status of the MEMS Industry” April 2014
InvenSense, Inc. Proprietary MEMS for Internet of Things (IoT) Market
$1,200
$1,000
$800
$600
US$M $400
$200
$0 2013 2014 2015 2016 2017 2018 2019
Yole Devélopement “Status of the MEMS Industry” April 2014
InvenSense, Inc. Proprietary Ambient Computing – Internet of Things
AlwaysOn, and Intuitively Interactive Apps and Services
Location + Activity + Time + Environment
Sensor
Sensor
wearabl e energy control security
sports
InvenSense, Inc. Proprietary 15 INVENSENSE
InvenSense, Inc. Proprietary $372
$253
$209
$153
($ ($ inMillions) $97 $80
$29 $3 $8
FY2007 FY2008 FY2009 FY2010 FY2011 FY 2012 FY2013 FY2014 FY2015
Founded Headquarters Cash Position 11.16.11 Employees 2003 San Jose, CA $242M (As of 28 June 2015) NYSE: INVN 665
Note: Company fiscal year ends Sunday closest to March 31. InvenSense, Inc. Proprietary Calgary, Canada Bratislava, Slovakia Grenoble, France San Jose, Calif Boston, Mass Milan, Italy Seoul, Korea Yokohama, Japan Shenzhen, China
Shanghai, China Hsinchu, Taiwan
9 InvenSense, Inc. Proprietary Select Customers
Other/ IoT 10% Imaging 12%
FY15
Mobile 78%
10 InvenSense, Inc. Proprietary Unique Technology & Intellectual Property
MEMS Microphones
MEMS Sensors Sensor Fusion
Fabrication
Stabilization Navigation
Fingerprint Authentication
11 InvenSense, Inc. Proprietary Fabless Business Model
CMOS-MEMS Wafer Sort Packaging Proprietary Testing
ASE TSMC InvenSense Amkor InvenSense GlobalFoundries Lingsen
• 1 Billion Unit Capacity • Super Efficient Supply Chain • Easy Fulfillment of Short Lead Time Upsides
12 InvenSense, Inc. Proprietary VALUE OF WAFER-LEVEL CMOS-MEMS INTEGRATION
InvenSense, Inc. Proprietary Wafer-level Integration Advantages
Low Parasitics
Minimize routing and external interconnect
Wafer Level Sealing / Packaging
Wafer Level Testing
Designed for Test
InvenSense, Inc. Proprietary Semiconductor Manufacturing Flow for MEMS
CMOS–MEMS Singulation Final Test Wafer Sort Assembly InvenSense Wafer Integrated Process (e-test) 1 chip TSMC Chip
15
CMOS-MEMS Wafer Sort Packaging FT & Ship
CMOS Wafer WAT CMOS Singulation Final Test Foundry 1 only ASIC Chip Traditional Assembly MEMS Multi-Chip Process MEMS Wafer Singulation MEMS WAT Foundry 2 MEMS Chip
InvenSense, Inc. Proprietary Applications Benefiting from CMOS Integration
High Sensitivity • Low signal and low noise requirement
High Complexity • Large arrays and closed-loop control
High Integration • Sensor fusion and high-density SoC
Low Cost and Small Size • Mobile devices and Internet of Things • Implantable Sensors
InvenSense, Inc. Proprietary INVENSENSE SHUTTLE
InvenSense, Inc. Proprietary Challenges for MEMS Product Development
• “One product - one process” increases barrier to entry Fabrication • Find foundry able and willing to bring up new process
• Fighting both design and process simultaneously Development • Need for fast design iterations to keep up with market • New start ups need $50M-$70M, 7+ years to profit
• Over 50% of costs are in package and test Production • Establish high yield and quality • Establish reliable supply chain to deliver high quality at low cost
• Extend and expand product base Growth • Maintain competitiveness - add more value and lower cost
InvenSense, Inc. Proprietary InvenSense Shuttle Objectives
Offer a proven and high volume CMOS-MEMS platform for MEMS fabrication
Speed up development cycle and time to commercialization
Bring the “fabless CMOS” scalable production model to MEMS industry
InvenSense, Inc. Proprietary InvenSense Shuttle Payoff
• Faster development cycle by focusing on innovative MEMS designs and not fabrication Innovators • Faster and lower cost development cycles
• Collaborate on new ideas and opportunities • Building a closer relationship with innovators InvenSense • Potential royalty revenue
• More innovations in MEMS • More standardization in the industry Market
InvenSense, Inc. Proprietary InvenSense Shuttle Processes
• Standard (SOI) Shuttle – Process used on InvenSense inertial sensors – SOI MEMS integrated with 0.18um CMOS – Suitable for: Inertial, Resonators, Pressure, RF
• Piezo Shuttle – Extension of standard process to piezo (AlN) – AlN + Si MEMS integrated with 0.18um CMOS – Suitable for: RF, Ultrasound, IR, Timing, Audio
InvenSense, Inc. Proprietary SOI Shuttle Process Overview
• Single-Crystal Si MEMS Structural layer • DRIE structure definition MEMS • No release etch requirement • Aluminum-Germanium wafer bond
• 0.18 mm Process CMOS • High voltage LDMOS (up to 24v) • 6 Metal layers
MEMS Anchored to MEMS Anchored to CMOS Contact handle only handle and CMOS Moveable Upper MEMS Cavity Wire-Bond Pad
Bottom Cavity in CMOS
Electrode to interact with MEMS Eutectic Bond
CMOS Wafer CMOS Top Metal Device Layer Handle Wafer
IMD+Pass. Germanium Buried Oxide Top Aluminum InvenSense, Inc. Proprietary Piezo Shuttle Process Overview
• AlN + Silicon structural layer • Top and Bottom piezo electrodes MEMS • Port opening to expose MEMS to environment • TCF compensation options • Aluminum-Germanium wafer bond
• 0.18 mm Process CMOS • High voltage LDMOS (up to 24v) • 6 Metal layers
MEMS wafer Oxide Al Device layer IMD CMOS wafer AlN Mo Ge
InvenSense, Inc. Proprietary Standard Shuttle Process Flow
InvenSense, Inc. Proprietary Piezo Shuttle Process Flow
MEMS wafer Oxide Al Device layer IMD CMOS wafer AlN Mo Ge
25 InvenSense, Inc. Proprietary SAMPLE SHUTTLE PROJECTS
InvenSense, Inc. Proprietary Project: Mode-Reversal FM Gyro
Collaborators: D. Horsley, B. Boser UC Davis/Berkeley
Process: SOI
27 InvenSense, Inc. Proprietary Project: CMOS-Integrated High- Frequency Resonators
Collaborators: T. Kenny, B. Murmann Stanford University
Process: SOI
28 InvenSense, Inc. Proprietary Project: Nano-Power Pressure Sensor
Collaborators: S. Gambini University of Melbourne
Process: SOI
29 InvenSense, Inc. Proprietary Shuttle Projects: IR Sensor
Collaborators: Mina Rais-Zadeh University of Michigan
Process: Piezo
IR on
IR off
30 InvenSense, Inc. Proprietary Projects: Ultrasonic Fingerprint Sensor
Collaborators: D. Horsley, B. Boser UC Davis/Berkeley
Process: Piezo
Fingerprint (optic) Fingerprint (ultrasonic) mV 4 25 3
2 20 1
0 15
-1
-2 10 Lateral distance - y (mm) y - distance Lateral -3 5 -4 -5 -4 -3 -2 -1 0 1 2 3 4 5 Lateral distance - x (mm)
31 InvenSense, Inc. Proprietary INVENSENSE SHUTTLE PROGRAM
InvenSense, Inc. Proprietary Summary
InvenSense Shuttle • Brings the CMOS fabless model to MEMS industry • Increases MEMS Value through system integration • Enables revolutionary new Smart MEMS products • Opens world class foundries to MEMS innovators • Reduces time to market
• Next Shuttle tapes out in December 2016 • For More Information – Contact us: [email protected] – Register on NF Shuttle Web Site: http://www.invensense.com/invensense- shuttle/login/
InvenSense, Inc. Proprietary Thank You
InvenSenseInvenSense, Inc. Company Inc. Proprietary Confidential