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ON Semiconductor Is ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. AND8116/D Integrated Relay/Inductive Load Drivers for Industrial and Automotive Applications www.onsemi.com Abstract APPLICATION NOTE Most PC board mounted relays are driven by microprocessors or other sensitive electronic devices. A successful coil drive circuit requires isolation between the relay and the microprocessor circuitry. Effective drive Industrial and Automotive Application Requirements circuits must account for drive current and voltage The device requirements for industrial and automotive requirements as well as effective suppression of L di/dt applications are different and must be addressed in different transients which can destroy microprocessor circuits. While manner. While the requirements for automotive applications it is easy to over-design an effective drive circuit, today’s are the most difficult to comply with, industrial designs must be cost competitive. Integrating a monolithic requirements traditionally allow more latitudes. Relay coil IC driver device into the relay will provide significant value currents vary considerably depending on the applications. to the system designer. The largest class of industrial and automotive relays have This paper describes the operation of coils with current consumption between 50 and 150 mA. ON Semiconductor’s integrated relay driver products to Selection of a suitable relay driver requires many interface sensitive electronic devices with mechanical constraints to be evaluated. For automotive applications, it relays to accomplish different control/power functions. is necessary to put special attention in the following Important benefits such as PC board space savings and requirements: components count reduction are also explained. • Load Dump (80 V, 300 ms) Introduction • Dual Voltage Jump Start (24 V or More) Although the advances in the electronics industry are • Reverse Battery (−14 V, 1 Minute or More) increasing day by day, mechanical relays are still • ESD Immunity (according AEC−Q100 Specification) extensively used in industrial and automotive applications to • Operating Ambient Temperature (−40°C to 85°C) control high current loads. Their low cost and excellent fault tolerance make relays to be an useful and reliable solution Meeting these automotive requirements usually results in in industrial and automotive applications environments. specifying an oversized and non-cost effective relay driver, The integrated relay driver devices NUD3105, NUD3112 or one requiring many protection components. and NUD3124 offered by ON Semiconductor are Industrial applications on the other hand do not have many considered to be the ideal device solution to control requirements different than the standard ones such as ESD mechanical relays used in industrial and automotive immunity (usually 2.0 kV HBM), and a given range of applications. Their integrated design allows significant operating ambient temperature (usually between 0°C to simplification and cost reductions when replacing 85°C). However, some applications also call for protection traditional discrete solutions such as bipolar transistors plus devices against transient voltage conditions, which creates free-wheeling diodes. the need for extra protection components too. © Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2015 − Rev. 2 AND8116/D AND8116/D STANDARD DISCRETE RELAY DRIVERS For both type of applications industrial and automotive, +12 V the most traditional and popular relay drivers are the ones formed discretely with a bipolar transistor, two bias resistors D1 and a free-wheeling diode. In some cases, it is required to add extra components such as MOVs (metal oxide varistors) and extra diodes to ensure proper protection. Figure 1 shows a typical discrete relay driver with the extra protection D2 RELAY devices. Diode D1 provides reverse supply protection and +5 V/3.3 V diode D2 provides a clamp function to suppress the voltage spike generated by the relay’s coil during the turn-off interactions (V = Ldi/dt). A power MOV device is used to R1 VARISTOR LOGIC Q1 limit positive transients to within the bipolar transistor’s breakdown voltage. The saturation voltage of the bipolar R2 transistor (typically over 1.0 V) causes high power dissipation which in some cases eliminates the option to use inexpensive surface mount package devices such as 0 SOT−23 or smaller, therefore the need for bigger packages Figure 1. Typical Discrete Relay Driver such as TO220 is always present. The resulting discrete circuit is expensive because it takes several components and a big space in the PC board. ON SEMICONDUCTOR’S RELAY DRIVERS The ON Semiconductor’s relay drivers portfolio is Drain (3) divided in two main categories: • Industrial Version (Devices NUD3105, NUD3112) • Automotive Version (Device NUD3124) Clamp Zener 7 V or 14 V Gate (1) 1.0 k Industrial Version Clamp Zener ESD Figure 2 describes the industrial relay driver version 7 V or 14 V (devices NUD3105, NUD3112). This device integrates Zener 7 V several discrete components in a single SOT−23 three 300 k leaded surface mount package to achieve a simpler and more ESD efficient solution than the conventional discrete relay Zener drivers. The characteristics of the integrated devices are 7 V listed below: • N-Channel FET 40 V, 500 mA Source (2) • ESD Protection Zener Diodes (7.0 V) Figure 2. Industrial Relay Driver Description • Bias Resistors (1.0 kW in the Gate and 300 kW between (NUD3105 and NUD3112 Devices) Gate and Source) • Clamping Protection Zener Diodes (7.0 V for 5.0 V Relay’s Coils, and 14 V for 12 V Coils) www.onsemi.com 2 AND8116/D The 40 V N-channel FET is designed to switch the relay’s against ESD conditions possibly induced by persons during coil for currents up to 500 mA. The clamping protection the handling or assembly of the device. And the bias resistor Zener diodes (14 V) provides a clamp function to suppress provides the drive control signals to the FET. the voltage spike generated by the relay’s coil during the Figure 3 illustrates the typical connection diagram of the turn−off interactions (V = Ldi/dt). The ESD protection NUD3105/NUD3112 devices: Zener diodes protects the gate-source silicon junction +12 V/5.0 V RELAY NUD3105, NUD3112 +5 V/3.3 V Clamp Zener 7 V or 14 V 1.0 k LOGIC Clamp Zener ESD 7 V or 14 V Zener 14 V 300 k ESD Zener 14 V 0 Figure 3. Typical Connection Diagram (NUD3105 5.0 V Relay’s Coils and NUD3112 for 12 V) When positive logic voltage is applied to the gate of the device (5.0 V/3.3 V), the FET is turned-on which activates VSUPPLY – 10 V/div the relay. When the FET is turned-off, the relay’s coil is V – 10 V/div deactivated which causes it to kickback and generates a high GS voltage spike, this voltage spike is suppressed by the clamp Zener diodes placed across the FET. This operation Inductor sequence is repeated for all the on and off operations of the kick back relay driver. Figure 4 shows the voltage and current VDS – 10 V/div waveforms generated across the NUD3112 relay driver when it is controlling an OMRON relay (G8TB−1A−64). This relay has the following coil characteristics: L = 46 mH, ID – 50 mA/div Rdc = 100 W. The current that the relay takes for 12 V of supply voltage is 120 mA.
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