arXiv:2105.04327v2 [cond-mat.mes-hall] 1 Jul 2021 icnl oeajcn M ooaes hsboost- thus monolayers, TMD sig- can adjacent roughness dope surface nificantly low for fer- with enabling, this insulator [18], YIG rimagnetic coupling of - properties promis- efficient example, as unique attention the heterostructures. Besides attracted TMD-based for recently substrates magnetic ing have 17], [16, Waals der van [10–15]. layered crystals or antiferromagnetic proximity films, and in thin ferromagnetic put bulk, systems various TMD with of in interest information studies much potential generated experimental has for This external required applications. large as storage for [9] need prox- fields the through magnetic eliminating points K’ and and effects the K imity lifting the example, at with for degeneracy allows, interfacing energy It via [8]. is materials properties magnetic valley excitonic TMD val- TMD-based 7]. of provides [6, development and devices freedom leytronic the of for degree gives “valley” opportunities which new 5], a [4, to helicity access opposite emergence of the K/K’ to in valleys coupled nonequivalent result but energy-degenerate systems two these of in spin- strong coupling and orbit symmetry ex- inversion bound Broken strongly [1–3]. support citons that thin materials atomically air-stable into as and integration devices for opto-electronic on-chip candidates future attractive are mono- form their layer in (TMDs) dichalcogenides metal Transition alyplrzto ftin nmnlyrMoSe monolayer in trions of polarization Valley 8 T etrfrQatmCmuiain,Ntoa Universit National Communications, Quantum for Center NTI rngres npriua tru rngre (YIG) garnet iron yttrium particular in garnets, Iron the of control further to approach general promising A inpoesn n trg.Hr esuycrual polar circularly study we MoSe valleytro Here monolayer novel of of storage. heterostructures degre development in and valley the processing intrinsic for tion their platform on promising a control additional enables o antzto-nue maac fcag aresin theor carriers a charge propose of We excitation imbalance polarized substrate. magnetization-induced the circularly for in right magnetization and of-plane left temperature, wi to increasing with charged response sign from switches emission which strong ization, observe We garnet. h xeietldt.Orrslspoienwisgt int insights new provide e substrates. results magnetic shows excito Our with which A interfaced times, to semiconductors data. relaxation B experimental valley from the extended scattering valley-switching with for trions as well as nefcn tmclyti a e al eiodcosw semiconductors Waals der van thin atomically Interfacing 1 aiyKravtsov, Vasily eateto hsc n niern,IM nvriy Sa University, ITMO Engineering, and Physics of Department Belotelov, .Kapralov, O. 4 2 eateto hsc n srnm,Uiest fSheffield of University Astronomy, and Physics of Department etrfrPooisad2 aeil,Mso nttt fP of Institute Moscow Materials, 2D and Photonics for Center 6 aut fPyis oooo ocwSaeUiest,Mos University, State Moscow Lomonosov Physics, of Faculty 7 3 cec nttt,Uiest fIead uhg-,IS-1 Dunhagi-3, Iceland, of University Institute, Science usa unu etr klooInvto iy ocw1 Moscow City, Innovation Skolkovo Center, Quantum Russian ,5 6 5, 3, 5 endk rma eea nvriy ifrpl295007, Simferopol University, Federal Crimean Vernadsky 3 ainlRsac nvriy ogpun 470 Russia 141700, Dolgoprudny University, Research National vnA Shelykh, A. Ivan 1, mtyN Krizhanovskii, N. Dmitry ∗ ain Ivanova, Tatiana ,1 7, Dtd uy2 2021) 2, July (Dated: lxne .Chernov, I. Alexander 1 re .Abramov, N. Artem 2 n hnfim ffriantcbsuhiron bismuth ferrimagnetic of films thin and ,4 1, fSineadTcnlg Ii,Mso 209 Russia 125009, Moscow MISiS, Technology and Science of y hre xiosi Ms si a icse nrecent in MoS in discussed polarization was valley of it trion physics of as signifi- reports valley TMDs, study in without to excitons charged [19]. opportunity trions response an optical of provides their This of strength quality the changing oscillator cantly the ing ftin nMoSe in trions of WS rysltigbtenKadK onsi MoSe in points en- K’ finite and a K cir- between with right- splitting and associated ergy left- ob- excitation, on for We polarized PL deposited cularly co-polarized substrates. [21] in garnet contrast (GGG) (BIG) iron serve garnet the garnet gallium from iron gadolinium compound bismuth magnetic family, similar a of ltomfrsuyn hre xiosadtervalley their and excitons charged dynamics. promising studying a sys- as for structures TMD-based platform TMD/BIG in highlight physics and valley tems the ex- the to the contribute of on findings understanding Our polarization experimental valley wavelength. laser by of citation dependence supported the is of model data our of excitons. A model validity and theoretical The B between a scattering develop intervalley on we based results, temperature. these a increasing explain to with To excitation crossover polarization the a positive of exhibits finite circular that which enhanced to polarization), opposite report (negative trions we of addition, temperature polarization its In measure and proximity, dependence. film BIG the by ldmrN Berzhansky, N. Vladimir eew td iclryplrzdphotoluminescence polarized circularly study we Here 2 YGsmls[20]. samples /YIG 2 nefcdwt imt rngarnet iron bismuth with interfaced n eosrt contrasting demonstrate and soitdwt nt out- finite with associated , n eesug170,Russia 197101, Petersburg int ,3 8 3, 2, 1 ffedmadprovides and freedom of e 7Ryjvk Iceland Reykjavik, 07 h w aly fMoSe of valleys two the oiaV Shilina, V. Polina hffil 37H UK 7RH, S3 Sheffield , 2 sadfs omto of formation fast and ns yisadTechnology, and hysics cletareetwith agreement xcellent hngtv alypolar- valley negative th i eie o informa- for devices nic tclmdlaccounting model etical zdphotoluminescence ized t antcsubstrates magnetic ith o 191 Russia 119991, cow ooaesitrae ihti films thin with interfaced monolayers alypyisi 2D in physics valley o n vnV Iorsh V. Ivan and 15,Russia 21353, Russia 5 ldmrI. Vladimir 2 Pavel 1, † 2 2 YG[9 and [19] /YIG , 2 induced 2

(a)σ− σ+ σ− σ+ (b) (c)

MoSe2

BIG TXTX

GGG

FIG. 1. Measurement of circularly polarized photoluminescence in MoSe2/BIG structures. (a) Schematic of the sample, consisting of monolayer MoSe2 transferred onto thin film of bismuth iron garnet (BIG) on gadolinium gallium garnet (GGG) substrate, and different excitation/detection circular polarization channels. (b) PL spectra measured in a co-polarized detection channel with right (RR) and left (LL) circularly polarized laser excitation. (c) PL spectra measured in co- (RR) and cross- (RL) polarized detection channels with right circularly polarized laser excitation.

In the experiment, we measure circular-polarization- ferent polarization channels at 6 K excited by 633 nm resolved photoluminescence spectra of monolayer MoSe2 cw laser are shown in Fig. 1b,c (see Supplementary In- interfaced with thin (3 µm) bismuth iron garnet films formation for the results on the samples with in-plane on 500 µm thick GGG (Gd3Ga5O12) substrates as illus- anisotropy). The two peaks correspond to emission from trated in Fig. 1a. Magnetic films were grown by liq- the neutral (X) and charged (T, trion) exciton complexes. uid phase epitaxy. Specifically, two types of the gar- In comparison to the case of monolayer MoSe2 on Ta2O5 net composition were used: (BiY)3(FeScAl)5O12 with in- substrates (see Supplementary Information), the trion plane magnetic anisotropy and (BiLuEu)3(FeGaAl)5O12 PL is enhanced while the neutral exciton PL is signifi- with an easy axis along the out-of-plane direction. High- cantly suppressed, which is due to doping from quality flakes of MoSe2 monolayers were mechanically ex- BIG films. foliated from a commercial bulk crystal (HQ Graphene) Spectra with right (σ+, R) and left (σ−, L) circu- with Nitto tape. TMD/BIG structures were assembled larly polarized excitation detected in the co-polarized via dry transfer of MoSe2 onto BIG films with viscoelas- channel (RR, LL) are shown in Fig. 1(b). To quan- tic polydimethylsiloxane stamps. We performed photo- tify the observed contrast, we introduce a parameter luminescence (PL) hyperspectral mapping on the pre- ρ = (IRR − ILL)/(IRR + ILL), where IRR, ILL are PL pared samples to determine areas with uniform contact intensities in the co-polarized channel when excited with between TMD and substrate and carried out further mea- right and left circularly polarized light, respectively. The surements in the selected locations. parameter ρ is related to the imbalance of carrier popula- Spectroscopic measurements were performed with tion in the monolayer MoSe2 K/K’ valleys due to Zeeman samples mounted in a closed-cycle ultralow-vibration splitting in the proximity of the BIG film, leading to the cryostat (Advanced Research Systems) and maintained corresponding but opposite imbalance of trion popula- at a controlled temperature in 6-50 K range. Samples tion, and is estimated as ∼ 10% for the trion PL peak. were excited either with a 632 nm (1.96 eV) cw HeNe Spectra with right circularly polarized (R) excita- laser or with light from a supercontinuum source (Fian- tion and different detection polarizations are shown in ium WhiteLase) spectrally filtered down to 4 nm band- Fig. 1(c), where RR corresponds to co-polarized PL, and width with center wavelength continuously tuned from RL to cross-polarized. We quantify the corresponding 550 nm to 750 nm. The excitation laser beam was fo- contrast with the degree of circular polarization (DOCP) cused onto the sample with a long-working distance mi- defined as DOCP = (Ico −Icross)/(Ico +Icross), where Ico, croscope objective (Mitutoyo 50X/0.42) yielding a spot Icross are PL intensities in the co- and cross-polarized size of ∼ 1 µm, the incident power was kept at ∼ 1 µW. channels, respectively. The DOCP value characterizes PL spectra were collected via the same microscope objec- the degree of valley polarization in the two valleys K/K’ tive and detected with a spectrometer and liquid nitrogen of the MoSe2 monolayer and is estimated for the trion cooled CCD camera (Princeton Instruments SP2500 + PL peak as ∼ −7%. The negative DOCP value implies PyLoN). Right and left circular polarization states were that, following excitation in a certain valley, the result- selected in the excitation and detection channels with ing population of trions becomes higher in the opposite a combination of broadband polarizers and superachro- valley. matic λ/4 and λ/2 plates. To clarify the mechanism of the negative trion DOCP, Typical PL spectra measured on MoSe2/BIG samples we measured PL spectra in the co- and cross-polarized with an easy axis (out-of-plane magnetization) in dif- channels for different excitation wavelengths. The ob- 3 tained spectra for selected excitation wavelengths are (a) (c) shown in Fig. 2a, where black and red curves correspond e to co- and cross-polarized PL, respectively. For low ex- E citation energies ~ωexc ∼ 1.7 eV close to the F trion emission energy, we observe a small positive DOCP X T X (3 − 4%) of the trion PL peak, which switches sign and B A A grows negative for higher photon energies ~ωexc ∼ 2.0 eV and ultimately approaches zero for ~ωexc > 2.2 eV. Fig. 2b shows the extracted DOCP for the trion PL peak as a function of the excitation photon energy (cir- h cles and green curve as a guide to the eye, left axis), together with the corresponding trion PL excitation spec- K K’ trum (gray, right axis). The PL excitation spectrum ex- ∼ hibits 2 peaks at 1.9 eV and < 1.70 eV, correspond- (b) X ing to the B and A excitons, respectively, in monolayer A XB MoSe2. As seen in the figure, trion DOCP values are neg- ative when exciting at or slightly higher than the B ex- citon frequency and become positive when exciting close to the A exciton frequency, which we will address in the discussion below. We further investigate the mechanisms behind the ob- served parameters DOCP and ρ by measuring their de- Filter pendencies on temperature. In Fig. 3 we show the values cut-off of DOCP (a, circles) and ρ (b, circles) obtained experi- mentally for the trion PL peak at varying sample tem- peratures. As seen in the plots, the trion DOCP changes sign at T ∼ 25 K and becomes positive for higher tem- peratures, while the parameter ρ exhibits only a slight FIG. 2. Excitation frequency dependence of the trion decrease with increasing temperature. PL response in MoSe2/BIG structures. (a) Normalized In the following discussion, we address the observed PL spectra taken in co- (RR, black curves) and cross- (RL, red trends and develop a theoretical model that explains curves) polarized detection channels for selected laser excita- tion frequencies indicated on the right. (b) Measured degree the experimental findings. The two distinct features ob- of circular polarization (DOCP) of the trion PL peak (blue served in the experiment are (i) the negative degree of circles, the green line is a guide to the eye, left vertical axis) trion circular polarization at low temperatures, which and corresponding PL intensity (shaded gray curve, right ver- changes sign as temperature is elevated, and (ii) the con- tical axis) as functions of the excitation photon energy. XA trast between co-polarized trion PL response for right and XB indicate peaks corresponding to excitation of A and and left circularly polarized pump. B excitons. (c) Schematic of the process resulting in the neg- The former effect does not require time reversal sym- ative valley polarization of trions. metry breaking in the sample and thus can also be ob- served, although less pronounced, in monolayer MoSe2 on substrates without out-of-plane magnetization when the opposite valley. While neutral excitons in monolayer excited close to resonance with B exciton (see Supple- MoSe2 rapidly depolarize [25], trions exhibit extended mentary Information and Ref. [22]). We explain this ef- valley relaxation times and thus partially retain the neg- fect by the presence of two competing energy relaxation ative valley polarization. As temperature is increased, pathways for the B exciton in MoSe2 as illustrated in the intravalley process becomes dominant, thus switch- Fig. 2c: the first one involves spin-preserving as- ing the sign of the trion valley polarization. We note sisted scattering of the B exciton in the K(K′) valley to that valley-switching processes involving scattering be- the opposite K′(K) valley (shown with solid arrows); the tween A and B excitons in other TMD compounds have second one corresponds to the exchange driven intraval- been discussed in literature previously [26, 27]; however, ley spin-flip process [23] (shown with dashed arrows). negative DOCP was reported only for the case of up- Both of these processes are irreversible due to the large converted emission. The dynamical processes underlying energy difference between A and B excitons. At low tem- the formation of trions with negative valley polarization peratures, the intravalley process is suppressed since ex- in TMD-based heterostructures can be in future stud- citons mostly occupy the band minima, and the intraval- ied with time-resolved spectroscopy using, for example, ley exchange coupling is proportional to the mean ther- time-resolved Kerr rotation [28]. mal momentum of the excitons [24]. Thus the interval- The second observed effect, namely the difference be- ley relaxation with the emission of a phonon dominates, tween RR and LL signals, requires the breaking of time which results in an excess population of A excitons in reversal symmetry in the sample and can be observed 4

(a) (b) where i,¯i = K,K′ is the valley index, P is the pump rate into the specific valley, τ[A,B,T i],r are the radiative lifetimes of A,B excitons and trions, τdep,[A,B,T ] are the respective valley depolarization times, τintra and τinter are the characteristic times of the intra- and intervalley relaxation of B excitons to A excitons, and τT F is the trion formation time, which depends on the momentum distribution of the A excitons and thus on the temper- ature. Note that we account for the different trion ra- diative lifetimes due to the applied magnetic field. Since the trion formation rate depends on the residual elec- tron concentration in the specific valley [29], the applied magnetic field makes τT F valley dependent. Using the proposed model, we calculate temperature dependencies of the trion DOCP and parameter ρ by nu- FIG. 3. Temperature dependence of the trion PL cir- merically finding the steady state solutions of Eqs. (2) cular polarization in MoSe2/BIG structures. (a) Tem- ∝ perature dependence of the degree of circular polarization. and evaluating the relative PL intensity as I n/τr. The (b) Temperature dependence of the parameter ρ defined as calculation results are shown in Fig. 3 with solid shaded contrast between co-polarized PL response for right and left curves and are in good agreement with the experimen- circularly polarized excitation (see text). Experimental data tal data. From the calculated temperature dependence points are shown with circles, and results of calculations ac- of the ρ parameter and Eq. (1) we estimate the value of cording to the model are shown with shaded curves. the Fermi energy ǫF ≈ 4 meV and the Zeeman splitting ∆z ≈ 0.3 meV. This results in the estimated value of the effective magnetic field B ≈ 2.5 T, which is much larger only in the MoSe2/BIG sample with out-of-plane mag- than the saturation magnetization field of BIG and thus netization. We associate the observed contrast with the may indicate the presence of the proximity effects in the difference in the residual electron concentrations induced heterostructure. by the electron Zeeman effect. We note however that Zee- In summary, we have investigated circularly polar- man splitting is not observed directly as its value is be- ized photoluminescence of trions in monolayer MoSe2 low our spectral resolution. The trion oscillator strength interfaced with ferrimagnetic BIG films. The experi- fT ∝ nefX is proportional to the residual electron con- mentally observed negative trion DOCP and contrast in centration and the neutral exciton oscillator strength in co-polarized PL for the right and left circularly polarized the absence of doping fX [29]. With the applied magnetic excitation are explained with a model accounting for a field the electron concentration difference in the two dif- an effective magnetic field due to the presence of BIG ferent valleys ∆ne can be approximated as: and valley-switching scattering from B to A excitons in MoSe2. Our results provide basic understanding of n ∆ 1 ∆n ≈ e z (1) the mechanisms of trion polarization in such systems e −ǫF /(kT ) 2ǫF 1+ e for the development of future devices based on the combination of electronic and valley degrees of freedom where ∆z = geµB B is the electron Zeeman splitting, with for information storage and processing. the electron g-factor ge and Bohr magneton µB, ǫF is Fermi energy, and T is temperature. The authors acknowledge funding from the Ministry Both observed effects can be modelled with a system of Education and Science of the Russian Federation of kinetic equations for the occupation numbers corre- ′ ′ through Megagrant No. 14.Y26.31.0015. Optical mea- sponding to A and B excitons nK(K ),nK(K ) and trions surements were funded by the Russian Science Foun- ′ XA XB nK(K ) in the two valleys: dation, project No. 19-72-00146. V.K. acknowledges T support by the Government of the Russian Federation ni ni ni n¯i − ni through the ITMO Fellowship and Professorship Pro- n˙ i = P i − XB − XB − XB + XB XB gram. The work of I.A.S. and I.V.I. on theoretical mod- XB τ τ τ τ B,r intra inter dep,B elling of the described effects was funded by Russian ¯ ¯ ni ni − ni ni ni ni Foundation for Basic Research (RFBR), according to the n˙ i = − XA + XA XA − XA + XB + XB XA i joint RFBR-DFG project No. 21-52-12038. The work of τA,r τdep,A τT F τintra τinter i i ¯i − i P.O.K., V.I.B., and A.I.C. in terms of magnetic films and i − nT nXA nT nT n˙ T = + + (2) magnetic properties was supported by RSF project No. i i τT ,r τT F τdep,T 21-12-00316. 5

∗ Corresponding author: [email protected] fect using resonant optical spectroscopy of an electrically † Corresponding author: [email protected] tunable MoSe2/CrBr3 heterostructure. Phys. Rev. Lett. [1] Mak, K. F. & Shan, J. Photonics and optoelectronics of 124, 197401 (2020). 2D semiconductor transition metal dichalcogenides. Nat. [16] Ng, S. M. et al. High-temperature anomalous Hall effect Photonics 10, 216–226 (2016). in a transition metal dichalcogenide ferromagnetic insu- [2] Wang, G. et al. Colloquium: Excitons in atomically thin lator heterostructure. ACS Nano 14, 7077–7084 (2020). transition metal dichalcogenides. Rev. Mod. Phys. 90, [17] Tsai, S.-P. et al. Room-temperature ferromagnetism of 021001 (2018). single-layer MoS2 induced by antiferromagnetic proxim- [3] Akinwande, D. et al. Graphene and two-dimensional ity of yttrium iron garnet. Adv. Quantum Technol. 4, materials for silicon technology. Nature 573, 507–518 2000104 (2021). (2019). [18] Gloppe, A. et al. Proximity-mediated magnon-exciton [4] Yao, W., Xiao, D. & Niu, Q. Valley-dependent optoelec- coupling at a van der Waals heterointerface. arXiv tronics from inversion symmetry breaking. Phys. Rev. B preprint arXiv:2006.14257 (2020). 77, 235406 (2008). [19] Peng, B. et al. Valley polarization of trions and mag- [5] Mak, K. F., He, K., Shan, J. & Heinz, T. F. Control of netoresistance in heterostructures of MoS2 and yttrium valley polarization in monolayer MoS2 by optical helicity. iron garnet. ACS Nano 11, 12257–12265 (2017). Nat. Nanotechnol. 7, 494–498 (2012). [20] Carmiggelt, J. J., Borst, M. & van der Sar, T. Exciton-to- [6] Vitale, S. A. et al. Valleytronics: Opportunities, chal- trion conversion as a control mechanism for valley polar- lenges, and paths forward. Small 14, 1801483 (2018). ization in room-temperature monolayer WS2. Sci. Rep. [7] Schaibley, J. R. et al. Valleytronics in 2D materials. Nat. 10, 1–7 (2020). Rev. Mater. 1, 1–15 (2016). [21] Ignatyeva, D. O. et al. All-dielectric magnetic metasur- [8] Zhang, Q., Yang, S. A., Mi, W., Cheng, Y. & Schwingen- face for advanced light control in dual polarizations com- schl¨ogl, U. Large spin-valley polarization in monolayer bined with high-Q resonances. Nat. Commun. 11, 1–8 MoTe2 on top of EuO (111). Adv. Mater. 28, 959–966 (2020). (2016). [22] Zhang, A. et al. Anomalous valley polarization in mono- [9] Zhao, C. et al. Enhanced valley splitting in monolayer layer MoSe2. arXiv preprint arXiv:1503.08631 (2015). WSe2 due to magnetic exchange field. Nat. Nanotechnol. [23] Guo, L. et al. Exchange-driven intravalley mixing of exci- 12, 757–762 (2017). tons in monolayer transition metal dichalcogenides. Na- [10] Norden, T. et al. Giant valley splitting in monolayer WS2 ture Physics 15, 228–232 (2019). by magnetic proximity effect. Nat. Commun. 10, 1–10 [24] Yu, T. & Wu, M. Valley depolarization due to interval- (2019). ley and intravalley electron-hole exchange interactions in [11] Huo, N. et al. Improved photoluminescence in 2D semi- monolayer mos 2. Physical Review B 89, 205303 (2014). conductors induced by interface magnetization. ACS [25] Wang, G. et al. Polarization and time-resolved photolu- Photonics 7, 3341–3345 (2020). minescence spectroscopy of excitons in MoSe2 monolay- [12] Zhang, W. et al. Ferromagnet/two-dimensional semicon- ers. Appl. Phys. Lett. 106, 112101 (2015). ducting transition-metal dichalcogenide interface with [26] Manca, M. et al. Enabling valley selective exciton scat- perpendicular magnetic anisotropy. ACS Nano 13, 2253– tering in monolayer WSe2 through upconversion. Nat. 2261 (2019). Commun. 8, 1–7 (2017). [13] Zhong, D. et al. Van der Waals engineering of ferromag- [27] Bergh¨auser, G. et al. Inverted valley polarization in opti- netic semiconductor heterostructures for spin and val- cally excited transition metal dichalcogenides. Nat. Com- leytronics. Sci. Adv. 3, e1603113 (2017). mun. 9, 1–8 (2018). [14] Lyons, T. P. et al. Interplay between spin proximity effect [28] Kravtsov, V. et al. Spin–valley dynamics in alloy- and charge-dependent exciton dynamics in MoSe2/CrBr3 based transition metal dichalcogenide heterobilayers. 2D van der Waals heterostructures. Nat. Commun. 11, 1–9 Mater. 8, 025011 (2021). (2020). [29] Glazov, M. Optical properties of charged excitons in [15] Ciorciaro, L., Kroner, M., Watanabe, K., Taniguchi, T. two-dimensional semiconductors. J. Chem. Phys. 153, & Imamoglu, A. Observation of magnetic proximity ef- 034703 (2020).