Agilent RF and Microwave Switch Selection Guide
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Fully Passive Conductive-Bridging Solid State RF Switch Abstract 1
32nd URSI GASS, Montreal, 19-26 August 2017 Fully Passive Conductive-Bridging Solid State RF Switch M.P. Jayakrishnan(1), Arnaud Vena(2), Brice Sorli(2) and Etienne Perret(1,3) (1) Université Grenoble Alpes - LCIS, 50, rue de Laffemas, BP 54, Valence 26902, France. (2) Institut d’Electronique du Sud, Université de Montpellier 2, Montpellier 34095, France. (3) Institut Universitaire de France, Paris 75005, France. Email: [email protected], [email protected] Abstract performance and good repeatability, which makes this concept a promising set forth. This study reports the design and experimental results of a fully-passive solid-state RF switch based on the 2. Background Conductive Bridging Memory Technology, popularly known as CBRAM. The developed device is a shunt The CBRAM RF switch is based on a Metal-Insulator- mode RF switch based on a Metal-Insulator-Metal (MIM) Metal structure as shown in Fig. 1 where the Insulator structure with Copper – Nafion – Aluminum switching layer is a solid electrolyte like common synthetic resin layers on a Coplanar Waveguide (CPW) transmission [6,7]and one of the electrode is an electrochemically line, operational in the DC to 3GHz range. DC pulses in active metal like copper or silver and the other is a the range +12V to –20V are used to operate the switch. relatively inert metal like aluminum or gold. The The design is initially simulated using the FEM based switching action is obtained by applying electric field of CST microwave Studio and then realized and validated on sufficient voltage to establish a metallic link between the a low cost FR4 substrate, and without using any two electrodes through the electrolyte, and by dissolving sophisticated clean room technology. -
RF Connector Overview Guide Linx Technologies Offers a Wide Variety of SMA, MCX, MMCX and MHF Radio Frequency Connector and Cable Assemblies
RF Connector Overview Guide Linx Technologies offers a wide variety of SMA, MCX, MMCX and MHF radio frequency connector and cable assemblies. RF connectors and cables consist of miniature precision-machined mechanical components and clever designs with complex assembly which are necessary to minimize losses and reflections. This requires tight tolerances, quality surface finishing and proper choice of metals and insulators. By combining domestic design and quality with offshore connector manufacturing, Linx offers low loss connectors at very competitive prices for OEM customers. – 1 – Revised 9/24/15 SMA Connectors Cable Termination SMA and RP-SMA Connecctors SMA (subminiature version A) connectors are high performance coaxial RF connectors with 50-ohm matching and Connector Body Orientation Mount Style Cable Types Polarity Part Numbers excellent electrical performance up to 18GHz with insertion loss as low as 0.17dB. They also have high mechanical Type Finish RG-174, RG-188A, Standard CONSMA007 strength through their thread coupling. This coupling minimizes reflections and attenuation by ensuring uniform SMA007 Straight Crimp End Plug Nickel RG-316 contact. SMA connectors are among the most popular connector type for OEMs as they offer high durability, low Reverse CONREVSMA007 RG-58/58A/58C, Standard CONSMA007-R58 VSWR and a variety of antenna mating choices. In order to comply with FCC Part 15 requirements for non-standard SMA007-R58 Straight Crimp End Plug Nickel RG-141A Reverse CONREVSMA007-R58 antenna connectors, SMA connectors are -
RF/Microwave Connectors on Printed Circuit Boards
High Frequency Design CONNECTORS ON PCBs RF/Microwave Connectors on Printed Circuit Boards By Gary Breed Editorial Director hen mounting This month’s tutorial takes a an RF/micro- look at the practical matter Wwave or high of characterizing, then speed digital connector to installing, an RF connector a printed circuit board, on a printed circuit board the transition from the connector body and inner conductor pin to the printed traces is often the source of excessive mismatch. The discontinu- ity in size, shape and surrounding conductors Figure 1 · Connectors must provide a tran- results in an area with a characteristic sition from a round coaxial transmission line impedance that can be much different (usual- to the planar microstrip or stripline structure ly lower) that the system impedance of 50 of a p.c. board. ohms (RF/microwave) or 75 ohms (data or video). An additional challenge is the transition increases the characteristic impedance in the from the round coaxial structure of cables and area where the required solder pad is much their connectors, to the planar stripline or wider than a normal 75-ohm microstrip line. microstrip structure of signal paths on a p.c. Figure 2 illustrates the problem by showing board. The connector shown in Figure 1 the relative widths of the solder pad and demonstrates one approach to solving the microstrip lines on the top metal layer. Figure problem. The connector body is designed to 3 shows how the top metal and the metal of minimize the VSWR “bump” caused by the the next lower layer are modified to create a change from coaxial to planar transmission region with higher characteristic impedance. -
CMOS T/R Switch Design : Towards Ultra‑Wideband and Higher Frequency
This document is downloaded from DR‑NTU (https://dr.ntu.edu.sg) Nanyang Technological University, Singapore. CMOS T/R switch design : towards ultra‑wideband and higher frequency Li, Qiang; Zhang, Yue Ping 2007 Li, Q., & Zhang, Y. P. (2007). CMOS T/R switch design : towards ultra‑wideband and higher frequency. IEEE Journal of Solid‑State Circuits, 42(3), 563‑570. https://hdl.handle.net/10356/91145 https://doi.org/10.1109/JSSC.2006.891442 © 2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site. Downloaded on 01 Oct 2021 08:29:57 SGT IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 42, NO. 3, MARCH 2007 563 CMOS T/R Switch Design: Towards Ultra-Wideband and Higher Frequency Qiang Li, Member, IEEE, and Y. P. Zhang Abstract—This paper presents the comprehensive consider- point in the transmit mode was obtained. The disad- ations of CMOS transmit/receive (T/R) switch design towards vantages of this approach are the design complexity and large ultra-wideband and over 15-GHz frequencies. -
Table of Contents
TABLE OF CONTENTS CHAPTER SUBJECT PAGE 1 Theory of Operation ........................................................................1-1 Line of Sight .............................................................................1-3 Troposcatter ..............................................................................1-4 Diffraction .................................................................................1-5 Fading .......................................................................................1-7 Diversity Reception ..................................................................1-7 Characteristics of AN/TRC-170 (V)2, 3, 5 ...............................1-9 Service Range of the V2, V3 ....................................................1-10 2 AC Power ..........................................................................................2-1 Power Entry Panel Controls & Indicators .................................2-3 Low Voltage Power Supply #1 .................................................2-11 Low Voltage Power Supply #2 .................................................2-12 AC-AC Converter .....................................................................2-14 3 DC POWER ……………………………………………………….3-1 4 TQG Operation ................................................................................4-1 Fault Indicator Panel .................................................................4-6 Generator Switch Over .............................................................4-10 5 Signal Flow .......................................................................................5-1 -
Fiscal 2010 Annual Report
Fiscal 2010 Annual Report A V I E L Electronics Chief Executive Officer’s Letter to Stockholders September 22, 2011 Fellow Stockholders: Fiscal Year 2010, which ended on October 31, 2010, was a year in which RF Industries achieved its eighteenth consecutive year of profitability and rebounded from a sales decline in Fiscal 2009 that was the result of the recession and the industry-wide slowdown in wireless infrastructure spending. The improvements in our operations in 2010, and the strengthening of our balance sheet in Fiscal 2010 enabled us to once again focus on our longer term goals of growth and acquisitions. Despite the general economic uncertainty in 2010, the improvement of RF Industries’ operations in Fiscal 2010 and the strength of its October 31, 2010 balance sheet provided us with the security and comfort to (i) expand our operations to the East Coast through the purchase Cables Unlimited, Inc., our new fiber optics and harness assembly subsidiary that we purchased in June 2011, and (ii) significantly increase the dividends that we are distributing to you stockholders. Fiscal 2010 Results For the fiscal year ended October 31, 2010, sales were $16,322,000, compared to sales of $14,213,000 in fiscal 2009. Operating income was $2,004,000 compared to $906,000 in 2009, and net income after taxes was $1,220,000, or $0.38 per diluted share, compared to net income of $656,000, or $0.20 per diluted share for fiscal 2009. Sales at the RF Connector and Cable Assembly segment, our most profitable business segment, increased 16% to $14,094,000 from $12,154,000 in fiscal 2009. -
RS Enterprises
+91-8048372651,225 RS Enterprises https://www.indiamart.com/rsenterpriseskannauj/ We “RS Enterprises” are a Sole Proprietorship based firm, engaged as the foremost Wholesaler of Coaxial Cable, BLW98 Transistor, Coaxial Connector, MS Connector, etc. About Us Established in the year 2017 at Kannauj, Uttar Pradesh, We “RS Enterprises” are a Sole Proprietorship based firm, engaged as the foremost Wholesaler of Coaxial Cable, BLW98 Transistor, Coaxial Connector, MS Connector, etc. Our products are high in demand due to their premium quality, seamless finish, different patterns and affordable prices. Furthermore, we ensure to timely deliver these products to our clients, through this we have gained a huge clients base in the market. For more information, please visit https://www.indiamart.com/rsenterpriseskannauj/about-us.html O u r P r o d u c t s E L B A C L A I X A O C Coaxial Cable RG6 Dual Shielded Coaxial Cable RG6 Coaxial Cable RF Coaxial Cable O u r P r o d u c t s R O T S I S N A R T 8 9 W L B BLW98 Transistor 15 AMP 32V/40V FUSABLE RESISTANCE (ALSO AVAILABLE IN DIFFERENT TYPE OF RESISTANCE) Solenoid Valve Model- 30126- ON5040 MOSFET 3-2G-S8 (Fluid control system) TRANSISTOR Make- Rotex O u r P r o d u c t R s O T C E N N O C L A I X A O C N Type Coaxial Connector F Coaxial Connector 75 Ohm F Connector MCX TO SMA Cable Connector O u r P r o d u c t s R O T I C A P A C A C I M 680pf 500v 1% silver dipped MATEL TYPE MICA CAPACITOR mica capacitor Mica Capacitor Mica Capacitor 120NF, 20NF,10NF ( 120000PF,20000PF.10000PF) O u r P r o d -
Variable Capacitors in RF Circuits
Source: Secrets of RF Circuit Design 1 CHAPTER Introduction to RF electronics Radio-frequency (RF) electronics differ from other electronics because the higher frequencies make some circuit operation a little hard to understand. Stray capacitance and stray inductance afflict these circuits. Stray capacitance is the capacitance that exists between conductors of the circuit, between conductors or components and ground, or between components. Stray inductance is the normal in- ductance of the conductors that connect components, as well as internal component inductances. These stray parameters are not usually important at dc and low ac frequencies, but as the frequency increases, they become a much larger proportion of the total. In some older very high frequency (VHF) TV tuners and VHF communi- cations receiver front ends, the stray capacitances were sufficiently large to tune the circuits, so no actual discrete tuning capacitors were needed. Also, skin effect exists at RF. The term skin effect refers to the fact that ac flows only on the outside portion of the conductor, while dc flows through the entire con- ductor. As frequency increases, skin effect produces a smaller zone of conduction and a correspondingly higher value of ac resistance compared with dc resistance. Another problem with RF circuits is that the signals find it easier to radiate both from the circuit and within the circuit. Thus, coupling effects between elements of the circuit, between the circuit and its environment, and from the environment to the circuit become a lot more critical at RF. Interference and other strange effects are found at RF that are missing in dc circuits and are negligible in most low- frequency ac circuits. -
A Fully Integrated High Ip1db CMOS SPDT Switch Using Stacked Transistors for 2.4 Ghz TDD Transceiver Applications
Sådhanå (2018) 43:94 Ó Indian Academy of Sciences https://doi.org/10.1007/s12046-018-0913-z Sadhana(0123456789().,-volV)FT3](0123456789().,-volV) A fully integrated high IP1dB CMOS SPDT switch using stacked transistors for 2.4 GHz TDD transceiver applications PAUL SCHMIEDEKE1,2, MOHAMMAD ARIF SOBHAN BHUIYAN2,5,*, MAMUN BIN IBNE REAZ2, TAE GYU CHANG3, MARIA LIZ CRESPO4 and ANDRES CICUTTIN4 1 Fakulta¨tfu¨r Elektrotechnik, Informationstechnik, Physik, Technische Universita¨t Braunschweig, Hans- Sommer-Str. 66, 38106 Brunswick, Germany 2 Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia 3 School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Korea 4 The Abdus Salam International Centre for Theoretical Physics, Via Beirut 31, 34100 Trieste, Italy 5 Department of Electrical and Electronics Engineering, Xiamen University Malaysia, Jalan Sunsuria, Bandar Sunsuria, 43900 Sepang, Selangor, Malaysia e-mail: [email protected]; [email protected]; [email protected]; [email protected]; [email protected]; [email protected]; [email protected] MS received 18 February 2016; revised 5 September 2017; accepted 13 September 2017; published online 7 June 2018 Abstract. A transmit/receive (T/R) switch is an essential module of every modern time division duplex (TDD) transceiver circuit. A T/R switch with high power handling capacity in CMOS process is difficult to design due to capacitive coupling of radio frequency signals to the substrate. This paper proposes a single-pole-double- throw (SPDT) T/R switch designed in a standard Silterra 130 nm CMOS process for high-power applications like RFID readers. -
RF Substrate Technologies for Mobile Communications White Paper
RF Substrate Technologies for Mobile Communications White paper V1.1 - May 2011 Stéphane Laurent | Strategic Marketing Engineer [email protected] Eric Desbonnets | Business Development Manager [email protected] Abstract Contents This white paper discusses a Introduction ...................................................... 2 variety of RF materials and RF basics and issues .......................................... 2 substrates capable of meeting RF Front-End module Key functions of RFFE modules ........................... 3 designers’ requirements. Selecting the optimal substrate ........................... 4 You will gain insight into how Gallium arsenide (GaAs) ................................................4 state-of-the-art expertise in Silicon-on-sapphire (SoS) ..............................................5 substrate technology can enable the mobile devices of High-resistive silicon-on-insulator (HR-SOI).....................5 the next decade. Silicon bulk...................................................................5 Conclusion......................................................... 6 References ........................................................ 7 About Soitec ...................................................... 7 Soitec | RF Substrates Technologies, Stéphane Laurent, Éric Desbonnets | Page 1 of 7 Introduction In today’s connected world, the demand for mobile communications and instant access to information, anytime and anywhere, has drastically changed the consumer electronics landscape. Infrastructure, -
Development of a Solid State Rf Amplifier in the Kw Regime for Application with Low Beta Superconducting Rf Cavities C
Proceedings of 2005 Particle Accelerator Conference, Knoxville, Tennessee DEVELOPMENT OF A SOLID STATE RF AMPLIFIER IN THE KW REGIME FOR APPLICATION WITH LOW BETA SUPERCONDUCTING RF CAVITIES C. Piel#, Accel GmbH, Bergisch Gladbach, Germany B. Aminov, A. Borisov, S. Kolesov, H. Piel, Cryoelectra GmbH, Wuppertal, Germany Abstract input and output baluns. The input and output matching Projects based on the use of low beta superconducting networks are composed of two sections, designed using cavities for ions are under operation or development at lumped as well as distributed components. Four tubular several labs worldwide. Often these cavities are trimming capacitors are used for the precise individual individually driven by RF power sources in the kW tuning of the matching circuits. Special loading networks regime [1, 2]. For an ongoing project a modular 2 kW, at the input and output are used to prevent any common- 176 MHz unconditionally stable RF amplifier for CW and mode oscillations. Integrated circuit voltage regulators pulsed operation was designed, built, and tested In order stabilize gate-source voltage. to optimize the performance of the power transistors and The quiescent drain current of the power transistor were other thermally loaded components an extended thermal adjusted to 1A (0.5A per transistor section) at 50VDC of analysis was performed to develop a high performance the drain voltage to ensure a class-AB operation. One of water cooling system. The paper outlines the design the 275 W modules is shown in Fig. 1. concept of the amplifier and presents characteristic experimental results obtained from a series of 6 high power amplifiers. -
RF Switch Design
RF Switch Design Emily Wagner Petro Papi Colin Cunningham Major Qualifying Project submitted to the Faculty of WORCESTER POLYTECHNIC INSTITUTE In partial fulfillment of the requirements for the degree of Bachelor of Science Approved: ______________________________ Professor Reinhold Ludwig ______________________________ Professor John McNeill ______________________________ David Whitefield Table of Contents Table of Figures .......................................................................................................................... 2 Table of Tables ........................................................................................................................... 3 Acknowledgements ..................................................................................................................... 4 Abstract ...................................................................................................................................... 5 1 Introduction ........................................................................................................................ 6 1.1 RF Switch Purpose and Cellular Applications ................................................................. 6 1.2 Design Challenges in Mobile Systems ............................................................................ 8 1.2.1 FET Breakdown Restrictions ..................................................................................... 8 1.2.2 Time Limitation of Finite Element Analysis ...............................................................