Time-Domain Investigations of Coherent Phonons in Van Der Waals Thin Films
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nanomaterials Review Time-Domain Investigations of Coherent Phonons in van der Waals Thin Films Fabien Vialla * and Natalia Del Fatti Institut Lumière Matière UMR 5306, Université Claude Bernard Lyon 1, CNRS, Université de Lyon, F-69622 Villeurbanne, France; [email protected] * Correspondence: [email protected] Received: 17 November 2020; Accepted: 14 December 2020; Published: 17 December 2020 Abstract: Coherent phonons can be launched in materials upon localized pulsed optical excitation, and be subsequently followed in time-domain, with a sub-picosecond resolution, using a time-delayed pulsed probe. This technique yields characterization of mechanical, optical, and electronic properties at the nanoscale, and is taken advantage of for investigations in material science, physics, chemistry, and biology. Here we review the use of this experimental method applied to the emerging field of homo- and heterostructures of van der Waals materials. Their unique structure corresponding to non-covalently stacked atomically thin layers allows for the study of original structural configurations, down to one-atom-thin films free of interface defect. The generation and relaxation of coherent optical phonons, as well as propagative and resonant breathing acoustic phonons, are comprehensively discussed. This approach opens new avenues for the in situ characterization of these novel materials, the observation and modulation of exotic phenomena, and advances in the field of acoustics microscopy. Keywords: acoustics; coherent phonon; breathing mode; picosecond ultrasonics; time-domain spectroscopy; pump-probe; van der Waals; two-dimensional materials; layered materials; mechanical resonator 1. Introduction Van der Waals (vdW) materials, also referred to as layered two-dimensional (2D) materials, are strongly anisotropic materials formed by layers of covalently bound atoms, stacked on top of each other and linked through vdW forces. Many lattice structures are encountered for the 2D layers, as depicted in Figure1, such as hexagonal one-atom-thick layers in graphite (where monolayers are referred to as graphene) and boron nitride (hBN), two-atom-thick layers in black phosphorous (BP), three-atom-thick layers with octahedral (PbI2, PtSe2 ::: ) or trigonal prismatic coordination (MoS2, WSe2 ::: ) usually referred to as transition metal dichalcogenides (TMDs), four-atom-thick layers (GaS, InSe ::: ), five-atom-thick layers (Sb2Se3, Bi2Te3 ::: ) usually referred to as V2VI3 chalcogenides or as quintuple layers (QLs), and many more complex structures [1,2]. In addition, they present various phases, also referred to as polytypes, related to the stacking alignment order of the layers, which further influence their physical properties [2,3]. In sum, the vdW material family spans the full variety of material classes, from dielectrics to metals, semiconductors with bandgaps from ultraviolet to mid-infrared, ferromagnets, piezoelectrics, superconductors, topological insulators, etc. [4–8]. Importantly, their strong structural anisotropy affects their mechanical, electronic, optical, and thermal properties. These original bulk properties have been under intense characterization during the 1970s and 1980s [1,2,9]. Nanomaterials 2020, 10, 2543; doi:10.3390/nano10122543 www.mdpi.com/journal/nanomaterials Nanomaterials 2020, 10, 2543 2 of 45 Nanomaterials 2020, 10, x FOR PEER REVIEW 2 of 47 (a) (b) (c) (d) (e) (f) Figure 1. FigureSchematics 1. Schematics of a relevant of a relevant subset subset of ofvan van der der Waals Waals materials,materials, which which will will be discussed be discussed in the in the following review. (a) Graphene layers in a Bernal stacking. (b) Black phosphorous. (c) PtSe2 in a 1T following review. (a) Graphene layers in a Bernal stacking. (b) Black phosphorous. (c) PtSe2 in a 1T phase stacking. (d) MoS2 in a 2H phase stacking. (e) InSe in a γ phase stacking. (f) Bi2Te3. phase stacking. (d) MoS2 in a 2H phase stacking. (e) InSe in a γ phase stacking. (f) Bi2Te3. A fresh appeal sprouted out in 2004 with the exploration of vdW materials reduced to a A freshsingle appeal monolayer sprouted after the out first in mechanical2004 with exfoliation the exploration and characterization of vdW materials of graphene reduced from bulk to a single monolayergraphite after the [10, 11first]. Its mechanical unconventional exfoliation structure, and a honeycomb characterization lattice of carbonof graphene atoms forming from bulk a true graphite 2D layer with no dandling bonds out of the plane, is at the origin of many unique features. The most [10,11]. Itsstriking unconventional one may be the structure, gapless, massless a honeycomb Dirac electrons lattice [10 ]of from carbon which atoms arise a spectrallyforming flat a true optical 2D layer with no dandlingabsorption bonds [12] and out many of the exotic plane, quantum is at transport the origin regimes of many [13]. Grapheneunique features. also presents The superior most striking one may thermalbe the [ 14gapless,] and mechanical massless properties Dirac [15electrons]. Likewise, [10] the wholefrom vdWwhich materials arise family a spectrally can be thinned flat optical absorptiondown [12] to and a single many layer, exotic yet sometimes quantum at transport the expense regimes of reduced [13]. chemical Graphene stability. also When presents reduced superior thermal [14]to the and atomic mechanical scale on the out-of-planeproperties dimension,[15]. Likewise, most of thesethe whole materials vdW present materials emerging family original can be properties stemming from quantum confinement and weakly screened charge carriers, for instance thinned downroom-temperature to a single excitonic layer, behaviorsyet sometimes in semiconducting at the expense TMDs [16 of,17 ].reduced Additionally, chemical since single-layer stability. When reduced tomaterials the atomic are only scale composed on the of out-of-plane surface atoms, theydimension, present a deep most tunability of these of materials their properties present through emerging original propertiestheir environment, stemming for instance from viaquantum capacitive conf couplinginement [10,18 and] and weakly Coulomb screened screening [charge19]. However, carriers, for instance room-temperaturethe coupling to an uncontrolled excitonic environment,behaviors in e.g., semiconducting to a substrate or TMDs adsorbed [16,17]. molecules, Additionally, usually since single-layerpredominates materials over are the only intrinsic composed properties. of Thus, surface extrinsically atoms, induced they pr defects,esent inhomogeneities,a deep tunability and a of their dominant energy loss to the substrate were very detrimental in early studies [20–22]. properties throughIt is to circumventtheir environment, these issues for that instance the concept via ofcapacitive vdW heterostructures coupling [10,18] was introduced. and Coulomb screeningGraphene [19]. However, monolayer wasthe firstcoupling transferred to onan top un ofcontrolled hBN [23], and environment, then encapsulated e.g., in-between to a substrate [24], or adsorbedto molecules, achieve passivation usually andpredominates flattening of over the layer. the intrinsic This principle properties. of stacking Thus, diff extrinsicallyerent layers on induced defects, inhomogeneities,top of each other has and been a dominant extended overenergy the loss years to to the the substrate whole family were of vdWvery materialsdetrimental [6,8]. in early studies [20–22].Major nanofabrication challenges have been overcome, in particular concerning the cleanliness of It is to circumvent these issues that the concept of vdW heterostructures was introduced. Graphene monolayer was first transferred on top of hBN [23], and then encapsulated in-between [24], to achieve passivation and flattening of the layer. This principle of stacking different layers on top of each other has been extended over the years to the whole family of vdW materials [6,8]. Major nanofabrication challenges have been overcome, in particular concerning the cleanliness of the interfaces to achieve large scale, homogenous, optimized coupling [25–27]. Selective electrical contacting [28] and control over the relative angle between the layer lattices [29] can be implemented. In parallel, huge improvements have been obtained in the field of material synthesis leading to the successful growth of large-scale, single-crystal layers [30,31]. Chemical exfoliation and sorting processes yield large-scale, high-quality, controllable ensembles of few-layer sheets [32,33]. Nanomaterials 2020, 10, 2543 3 of 45 the interfaces to achieve large scale, homogenous, optimized coupling [25–27]. Selective electrical contacting [28] and control over the relative angle between the layer lattices [29] can be implemented. In parallel, huge improvements have been obtained in the field of material synthesis leading to the successful growth of large-scale, single-crystal layers [30,31]. Chemical exfoliation and sorting processes yield large-scale, high-quality, controllable ensembles of few-layer sheets [32,33]. Moreover, vdW heterostructures can be directly grown via chemical vapor deposition or molecular beam epitaxy [8,34], rather than tedious exfoliation and subsequent stacking of the layers. VdW heterostructure versatility can be further expanded by intercalating atoms or molecules between the layers, or functionalizing the layer surfaces [35,36]. In particular, changing growth stoichiometry of QL materials yields natural superlattices with for instance intercalation