IPFA 2021 Virtual Conference Technical Program 14 September - 13 October 2021

Time, SGT Plenary Session (GMT + 0800hrs) 14 September, Tuesday

09:00 - 09:15 hrs Opening Address by General Chair - Nagarajan Raghavan, Singapore University of Technology & Design, Singapore

09:15 - 09:20 hrs Technical Program Briefing by TPC Chair - Alfred Quah, GlobalFoundries, Singapore

09:20 - 09:30 hrs BREAK ( Connect to KN1 Live Session)

09:30 hrs Live Keynote Sessions (KN 1 - KN 3 )

KN 1 Anomalous Mechanical Deformation – New Variable in Reliability for Flexible and Stretchable CMOS Electronics 09:30 - 10:30 hrs Session Chair : Speaker - Professor Muhammad Mustafa Hussain, Nagarajan Raghavan UC Berkeley, USA

10:30 - 10:40 hrs BREAK ( Connect to KN2 Live Session)

KN 2 Reliability Insights from 25 Million Fully Autonomous Miles 10:40 - 11:40 hrs Session Chair : Speaker - Noah Lassar Alfred Quah Waymo, USA

EDFAS FA Technology Roadmap Overview Session Chair : 11:40 - 11:50 hrs Speaker - Vinod Narang Alfred Quah Advanced Micro Devices, Singapore

11:50 - 13:00 hrs Lunch BREAK ( Connect to KN3 Live Session)

KN 3 What’s wrong with my chip? – Dr. AI, can you please diagnose? 13:00 - 14:00 hrs Session Chair : Speaker - Professor Aaron Thean Samuel Chef National University of Singapore, Singapore

14:00 - 14:10 hrs BREAK Best Paper Exchange Session 14:10 hrs (Pre-Recorded Video Presentations)

Quantum Diamond Microscope: Integrated Circuit Magnetic Field Imaging Dr. Edlyn V. Levine ISTFA 2020 14:10 - 14:30 hrs The MITRE Coporation Exchange Paper Harvard University University of Maryland

FEM Simulation-Based Failure Analysis of Additive Manufacturing Liquid Cold Plates for More Reliable Power Press-Pack ESREF 2020 Assemblies 14:40 - 15:00 hrs 1 1 1 2 2 2 1 Exchange Paper Davide Spaggiari , Nicola Delmonte , Danilo Santoro , Federico Portesine , Filippo Vaccaro , Emilio Sacchi , Paolo Cova 1 University of Parma, Italy, 2 POSEICO S.p.A, Italy

End of Live Day

Tutorials Session 14 September - 13 October 2021 ( Video On Demand )

FA Tutorials Reliability Tutorials

Scanning Probe Microscopies for Correlative Analysis of Advanced Technology Nodes Robust and Reliable Design for In-Memory Computing Dr. Umberto Celano Prof Tuo-Hung Hou FA 1IMEC, Belgium REL 1 National Yang Ming Chiao Tung University,Taiwan MESA+ Institute for Nanotechnology, University of Twente, Netherlands

Faster Fault Isolation with Advanced Data Analysis and Automotive Reliability Requirements & Challenges for Computer Vision Semiconductor Foundries FA 2 REL 2 Dr. Franco Stellari Dr Oliver Aubel IBM T.J. Watson Reseach Center, USA GlobalFoundries, Germany 3D IC Process Technology – Drivers, Technology Platforms, Contactless Fault Isolation Techniques and IC Hardware Security Challenges & Solution FA 3Prof Christian Boit REL 3 Prof Tan Chuan Seng TU Berlin, Germany Nanyang Technological University, Singapore

Introduction of TEM/STEM Techniques in Analyzing Nano Laser Diodes: An Introductory Tutorial Materials Prof Massimo Vanzi FA 4Dr Jong-Shing Bow REL 4 University of Cagliari, Italy Integrated Service Technology Group, Taiwan

Track A - Emerging Topics in Failure Analysis & Reliability 14 September - 13 October 2021 ( Video On Demand )

Evaluation of Breakdown Interference and Strategy of Mitigating Yield Loss in Crossbar Memory Arrays Invited Dr. I-Ting Wang - National Yang Ming Chiao Tung University, Taiwan

Data analytics and Machine Learning: Root-Cause Problem- Reinforcement Learning to Reduce Failures in SOT-MRAM Solving Approach to prevent Yield Loss and Quality Issues in Switching Semiconductor Industry for Automotive Applications 1,2 2 1,2 A1.1 1 2 3 4 A1.5 Johannes Ender , Roberto Lacerda de Orio , Simone Fiorentini , Corinne Bergès , Jim Bird , Mehul D. Shroff , René Rongen , 2 3 1,2 (ID 16) 3 (ID 74) Siegfried Selberherr , Wolfgang Goes , Viktor Sverdlov Chris Smith 1 2 1 2 3 4 Christian Doppler Laboratory, Institute for Microelectronics, TU NXP, France, NXP Chandler, USA, NXP Austin, USA, NXP 3 Nijmegen, Netherlands Wien, Austria, Silvaco Europe Ltd, United Kingdom

Extraction of Secrets from Allegedly Secret-free IoT Sensors A1.2 ASIC Circuit Netlist Recognition Using Graph Neural Network A1.6 using Artificial Intelligence Xuenong Hong , Tong Lin, Yiqiong Shi, Bah Hwee Gwee Tuba Kiyan , Thilo Krachenfels, Elham Amini, Zarin Shakibaei, (ID 48) Nanyang Technological University, Singapore (ID 93) Christian Boit, Jean-Pierre Seifert TU Berlin, Germany

IC SynthLogo: A Synthetic Logo Image Dataset for Counterfeit Failure Analysis of Large Area Pt/HfO2/Pt Capacitors Using and Recycled IC detection Multilayer Perceptrons 1 2 2 A1.3 Mukhil Azhagan Mallaiyan Sathiaseelan , Manoj Yasaswi Vutukuru, A1.7 J. Muñoz-Gorriz , S. Monaghan , K. Cherkaoui , J. Suñé1, P.K. (ID 59) Suryaprakash Vasudev Pandurangi, Shayan Taheri, Navid (ID 94) Hurley 2 , E. Miranda 1 Asadizanjani 1 Universitat Autònoma de Barcelona, Spain, University of Florida, USA 2 University College Cork, Ireland

Generative Adversarial Network for Integrated Circuits Physical Virtual Metrology of Visualizing Copper Microstructure Featured Assurance Using Scanning Electron Microscopy A1.4 with Computer Vision and Artificial Neural Network A1.8 Md Mahfuz Al Hasan , Nidish Vashistha, Shayan Taheri, Mark Ling-Yen Yeh , Rencheng Chen (ID 62) (ID 101) Tehranipoor, and Navid Asadizanjani Sun Innovation Co. Ltd, Taiwan University of Florida, USA

A1.9 Hybrid Modelling for the Failure Analysis of SiC Power Transistors on Time-Domain Reflectometry Data Simon Kamm , Kanuj Sharma, Ingmar Kallfass, Nasser Jazdi, Michael Weyrich (ID 123) University of Stuttgart, Germany

Track B - Metrology & Package Failure Analysis 14 September - 13 October 2021 ( Video On Demand )

B1. Package Level Failure Analysis

3D MIM Capacitor Embedded in TSV: Concept, Device Demonstration, Reliability and Applications Invited Prof. Tan Chuan Seng - Nanyang Technological University, Singapore

Atmospheric Corrosion of Ag/Cu Plated FeNi Based Leadframe Mechanical BEoL Stability Investigation at Cu-Pillars under used in MOSFET Package Cyclic Load 1 2 2 3 Lois Jinzhi Liao , Bisheng Wang , Juanlu Cai , Tao Zhang , Jing Jendrik Silomon 1 , Jürgen Gluch 2 , André Clausner 2 , Ehrenfried B1.1 4 1 1 1 1 B1.4 Liu , Liu Binhai , Xi Zhang , Younan Hua , Xiaomin Li Zschech 2 (ID 9 ) 1 (ID 91) WinTech Nano-Technology Services, Singapore 1 Volkswagen AG, Germany, 2 3 Huawei Technologies, China, Northeastern University, China, 2 Fraunhofer Institute for Ceramic Technologies and Systems IKTS, 4 Wuhan University of Technology,China Germany

A New 3D X-ray Solution for Non-Destructive Construction Simple Methods to Improve the CSAM Thru-Scan Efficiency on Analysis of Advanced Electronics Packages Package Units 1 2 3 2 B1.2 B1.5 Yanjing Yang , Allen Gu , Thom Gregorich , Masako Terada Hao Tan, Hnin Hnin Win Thoung, Krishnanunni Menon, Htin Kyaw, (ID 30) (ID 95) 1 Carl Zeiss X-ray Microscopy Applictations, Singapore Naiyun Xu, Pik Kee Tan, Changqing Chen 2 GlobalFoundries, Singapore Carl Zeiss Research Microscopy Solutions, USA 3 Carl Zeiss Semiconductor Manufacturing Technology, USA Failure Analysis on Diode-Triggered Silicon-Controlled Rectifiers By using Nondestructive X-ray Microscopy 1 1 3 1 1 Xinqian Chen , Mengge Jin , Feihou , Fang Liang , Zijian Zhang , A Systematic Failure Analysis Approach on Copper Pad 1 1 1 B1.3 Yanan Wang , Dongming Liu , Le Chen2 Chaolun Wang , Zhiwei B1.6 Discoloration Issue (ID 66) Liu 2 , Xing Wu 1 (ID 107) Hemalatha Somu , Krishnan Arul 1 East China Normal University, China, 2 University of Electronic Infineon Technology (Kulim) Sdn. Bhd, Malaysia Science and Technology of China, China, 3 Chengdu University, China

B1.7 Digital Twin Aided IC Packaging Structure Analysis for High-quality Sample Preparation Chengjie Xi , Aslam A. Khan, John True, Nidish Vashistha, Nathan Jessurun, Dr. Navid Asadizanjani (ID 118) University of Florida, USA

B2. Sample Preparation, Metrology & Defect Characterization

New Routine to Determine Microstructures of Metallic SIMS Analysis of Ultra-Shallow Boron Implant B2.1 B2.7 Interconnectors Using SEM-EBSD Technique Han Wei Teo , Yun Wang, Kenny Ong, Zhi Qiang Mo Jiang Wu and Eugene Choo (ID 20 ) GlobalFoundries, Singapore (ID 57) Oxford Instruments, Singapore

Super wide area cross sectioning using broad Ar ion beam on Sample Preparation For VCSEL Device Contamination Analysis solder bumping B2.2 Lei Zhu , Derrick Tan, Caryn Sek, Binghai Liu, Younan Hua, Xiaomin B2.8 Natsuko Asano , Tamae Omoto, Lu Jinfeng, Shogo Kataoka, Li (ID 21) (ID 68) Shunsuke Asahina WinTech Nano-Technology Services , Singapore JEOL, Japan

A Novel CMOS Image Sensor Package Cover Glass White Stain SIMS Methodology Study of Indium Implant Quantification B2.3 Material Identification Metrology by TOF-SIMS B2.9 Yun Wang , Kian Kok Ong, Han Wei Teo, Ramesh Rao Nistala and (ID 24) Yeh Yee Kee , Kei Lin Sek, Lei Zhu, Younan Hua, Xiaomin Li (ID 69) Zhi Qiang Mo WinTech Nano-Technology Services , Singapore GlobalFoundries, Singapore

The Monitor and Management of Sulfide Contamination for TEM-EDX Characterization of Immersion Pd & Pd-MoOx on Cu & Probing FAB clean room B2.4 B.2.10 NiP Frank Su , W.F. Hsieh, Henry Lin, Vincent Chen, Y.S. Lou Wan Tatt Wai , Arul Krishnan (ID 35 ) Ardentec Corporation, Taiwan (ID 85) Infineon Technologies Sdn Bhd, Malaysia

X-ray Microanalysis Background Noise Reduction by FIB sample Automatic Defect Review of a Patterned Wafer using Hybrid B2.5 Preparation B2.11 Metrology (ID 40) Kim Hong Yip , Poh Chuan Ang, Kwai Fun Lee, Ley Hong Khoo (ID 99) Byung Woon Ahn, Ahjin Jo, Jubok.lee, Sang-Joon Cho GlobalFoundries, Singapore Park Systems Corp, South Korea

Principal Component Analysis (PCA) of Surface Contamination Guidelines of Plasma-FIB Delayering techniques for Advanced by TOF-SIMS B2.6 B2.12 Process Node Kei Lin Sek , Pei Lin Lee, Khin Yin Pang, Younan Hua, Lei Zhu, Ching-Chun Lin , Yun-Da Li, Kim Hsu (ID 52) Xiaomin Li (ID 100) Integrated Service Technology Inc., Taiwan WinTech Nano-Technology Services , Singapore

Simultaneous, Submicron Infrared and Raman Microspectroscopies for Effective Failure and Contamination Analyses B2.13 1 1 1 1 2 Michael Lo , Mustafa Kansiz , Eoghan Dillon Jay Anderson Curtis Marcott (ID 136) 1 Photothermal Spectroscopy Corp., USA, 2 Light Light Solutions LLC, USA

Track C - Electrical Fault Isolation & Product Diagnostic 14 September - 13 October 2021 ( Video On Demand )

C1. Advanced Electrical Fault Isolation Techniques and Case Studies

Tool Automation and Computer Vision Methodologies for Faster IC Diagnostics Invited Franco Stellari , Chung-Ching Lin, Fei Lan and Peilin Song - IBM, USA

Logic State Imaging - From FA Techniques for Special Applications to One of the Most Powerful Hardware Security Side-Channel Threats Invited Prof. Christian Boit - TU Berlin, Germany

Low-Voltage EBIC Investigation of Fails Andreas Rummel 1 , Greg M. Johnson 2 , Matthias Kemmler 1 , Thomas MIPI RFFE Functional Leakage Failure Debug using an C1.1 3 C1.5 Integrated NI-PXIe Setup Rodgers D. Nagalingam , A.C.T. Quah, S.J. Moon, J.C. Alag, A.W. Teo (ID 78 ) 1 Kleindiek Nanotechnik, Germany, 2 Zeiss Microscopy, USA, (ID 44) GlobalFoundries, Singapore 3 Zeiss Microscopy, Germany Finding Invisible Cracks via Nano-Probing Proposal for Advanced Devices Analysis using 930nm Light Lai-Seng Yeoh 1 , Kok-Cheng Chong 1 , Susan Li 2 , Andreas Source and GaAs SIL 3 C1.2 C1.6 Rummel Tomonori Nakamura , Akihito Uchikado, Mitsunori Nishizawa, Ikuo 1 (ID 81) Arata, Masanori Kobayashi, Xiangguang Mao, Akira Shimase (ID 67) Infineon Technologies Memory Solutions Malaysia Sdn. Bhd, 2 Hamamatsu Photonick K.K., Japan Malaysia, Infineon Technologies Inc., USA, 3 Kleindiek Nanotechnik GmbH, Germany

Meticulous System Calibration as a key for extracting correct Case Studies: Masked Read-Only Memory Failure Fault Isolation Photon Emission Spectra C1.3 C1.7 without Bitmapping Norbert Herfurth 2 , Christian Boit 1 BL Yeoh , MH Thor, LS Gan, SH Goh, YH Chan, WF Soh,C. (ID 92) 1 2 (ID 90) Berlin University of Technology, Germany, IHP – Leibniz-Institut für Shaalini, Wiswa Naradha innovative Mikroelektronik, Germany GlobalFoundries, Singapore

Dynamic Defect Localization by Toggling Integrated Circuits Significance of Dynamic Electrical Fault Isolation Techniques on C1.4 States C1.8 Buried Via Void defects (ID 33) Ke-Ying Lin, Paul Kenneth Ang , Chun-Wei Ke, Toby Chen (ID 98) MH Thor , SH Goh, BL Yeoh, LS Gan, YH Chan NXP Semiconductors, Taiwan GlobalFoundries, Singapore

C2 Product Test and Diagnostics

Localization of Front-end Defects Using Volume Scan Diagnosis Invited Jayant D'Souza - Siemens EDA, USA

Hysteresis Effect Induces the Inductor Power Loss of Converter during the Voltage Conversion E-test Probe Mark Topology-induced Failure 1 1 2 2 C2.1 Jian-Hsing Lee , Karuna Nidhi , Chung-Yu Hung , Ting-Wei Liao , C2.3 JF Jong 1 , TW Lim 1 , SH Goh 1 , Yang Qu 2 , Jeffrey Lam 2 2 2 (ID 54 ) Wu-Yang Liu , Hung-Der Su (ID 124) 1 Globalfoundries Singapore 1 Vanguard International Semiconductor Corp, Taiwan 2 Star-Quest Technologies Singapore 2 Richtek Technology Corporation, Taiwan

Failure Analysis of a PROM at Low Temperature Induced by Process Deviation Digital and AMS Yield Diagnosis Flow Combining Automated Pengfei Lian 1 , Jianshe Lou 1 , Yunlong Liu 2 , Peipei Fan 1 , Rong C2.2 Testing and Fault Injection-based Circuit Simulation C2.4 1 1 1 1 3 1 1 1 1 Zhao , Zebin Kong , Weiming Zhu , Kunshu Wang , Lu Tang (ID 111) C. Shaalini , Song li , SH Goh , WF Soh , (ID 125) 1 GlobalFoundries, Singapore Institute of Shanghai Academy of Spaceflight Technology, China, 2 Shenzhen State Microelectronics Co., China, 3 University of Shanghai for Science and Technology, China

Track D - Physical Failure Analysis 14 September - 13 October 2021 ( Video On Demand )

D1. Advanced Physical Failure Analysis Techniques

Dielectric Breakdown in Hexagonal Boron Nitride Invited Dr. Alok Ranjan - Singapore University of Technology & Design, Singapore

Local Capacitance-Voltage Profiling and Deep Level Transient Investigation on the Copper Void Defect by Transmission Spectroscopy of SiO2/SiC Interfaces by Scanning Nonlinear D1.1 Electron Microscope (TEM) D1.5 Dielectric Microscopy Chi Wen Soo , Jie Zhu (ID 13 ) (ID 65) Kohei Yamasue , Yasuo Cho GlobalFoundries, Singapore Tohoku University, Japan Improving Tomographic Sensing of Scalpel SPM with Multi- Silicon Defect Observation From Ultra-Thick Sample Using TEM Probe Functionality and Automatic Removal Rate Extraction 1 1 2 2 D1.2 EELS Technique D1.6 C. O’Sullivan , M. Tedaldi , C. Drilakis , T. Hantschel , A.D.L. (ID 22) Gek Li Lee , Kok Wah Lee, Jie Zhu (ID 103) Humphris 1,3 , J.P.Hole 1 , J. Goulden 1 , U. Celano 2,4 GlobalFoundries, Singapore 1 Infinitesima, United Kingdom, 2 IMEC, Belgium, 3 University of Bristol, United Kingdom, 4 University of Twente, Netherlands

Innovative use of TCAD Process Simulation for Device Failure TEM EELS Analysis for DRAM Failure Analysis D1.3 D1.7 Analysis S. Y. Chen , W. Yang, G. F. Xu, C. T. Liu Shang Yi Lim , Joydeep Ghosh, Aaron Thean (ID 38) Changxin Memory Technologies, China (ID 109) National University of Singapore, Singapore

3D NAND Memory Auto-delayering with Generic Delayering Model Using PFIB D1.4 1 1 1 2 Bingxing Wu , Ruixin Zhang , Zhengqiang Guo , Zhenxin Zhong (ID 56) 1 Thermo Fisher Scientific, China, 2 Thermo Fisher Scientific, USA D2. Case Studies on Physical Failure Analysis

Direct Visualization of Breakdown Induced Metal Migration in ESD Devices Invited Prof. Xing Wu - East China Normal University, China

Failure Analysis on MIM Capacitor Failures of RF Devices using The Failure Mechansim of the E-SOA Boundary of Power Simple Circuit Edit Passive Voltage Contrast Method Transistor Collapsed at Higher Gate Voltage D2.1 D2.5 Siong Luong Ting, Pik Kee Tan, Naiyun Xu, Hnin Hnin Win Jian-Hsing Lee, Karuna Nidhi, Tingyou Lin, Hsueh-Chun Liao, Fu- Thoungh, Htin Kyaw, Krishnanunni Menon, Yanlin Pan, (ID 55) Chun Tseng, Scott Lee (ID 73) Hao Tan, Changqing Chen Vanguard International Semiconductor Corp., Taiwan GlobalFoundries, Singapore

Application of Ion Chromatography in Corrosion Failure Reliability Analysis using Advanced Modeling Technique for Analysis of Components and Devices 1 1 1 1 1 MEMS Microphone Chao Cui , Yun Zhao , Yong Xiao , Ziwen Cai , Haolin Wang , D2.2 D2.6 2 3 Shubham Shubham, Xin Song, Yunfei Ma, Mark G. da Silva, Zhijun Jin Li , Shengzong He (ID 58) Guo, Jeremy Johnson, Michael Pedersen (ID 76) 1 Electric Power Research Institute of CSG, China Knowles Corporation, USA 2 Honghe Power Supply Bureau, China 3 CEPREI Lab, China

The Influence of Adhesive Tape on L0 Light Leakage of TFT-LCD Study on the Factors of Start-up Products after Reliability Test 1 1 1 1 D2.3 White Line Caused by Coupled Electric Field in TFT LCD D2.7 Tianyu Xu , Gang Yang , Zheng Jia , Jingang Wang , Yong (ID 60) Xin Li, Yong Song , Hongjun Yu, Chuncheng Che, Hailin Xue (ID 86) Song 1 , Hongjun Yu 1 , Chuncheng Che 1 , Hailin Xue 2 BOE Optoelectronics Technology CO., China 1 Beijing BOE Optoelectronics Technology Co., China, 2 BOE Technology Group Co., China

Metal Migration Induced Breakdown from Gate Contact in Bulk FinFET Devices Xin Yang 1 , Yihong Qing 2 , Kuei-Shu Chang-Liao 3 , Yuchong Qiao 1 , Failure Analysis Techniques and Studies on Vertical Short Issue Chaolun Wang 1 , Zhiwei Liu 2 , Luoyong Li 4 , Chihang Tsai 4 , Yongren for Production Wafers D2.4 4 4 4 1 D2.8 P.K. Tan, S.L. Ting, Y.L. Pan, N.Y. Xu, D. Nagalingam, H.H.W. Wu , Yazhen Xie , Weisong Yu , Xing Wu (ID 63) 1 2 (ID 115) Thoungh, H. Kyaw, H. Tan, K. Menon, R. Fransiscus, A. Quah, P.T. East China Normal University, China, University of Electronic Ng, S. M. Parab, C.Q. Chen. 3 Science and Technology of China, China, National Tsing Hua GlobalFoundries, Singapore University, Taiwan, 4 China Chinaisti (Shanghai) Testing Technology Co., China

D2.9 Analysis of a Failure in High-Voltage VDMOS Device caused by Die Contamination Zhaoxi Wu, Chao Duan, Zhiming Ding,Yaning Wu, Rui Cao, Xu Wang, Meng Meng (ID 137) China Aerospace Components Engineering Center, China

Track E - Devices, Interconnects & Packaging Reliability 14 September - 13 October 2021 ( Video On Demand )

E1. Transistor and NVM Device Reliability

Random Telegraph Noise for Advanced True Random Number Generation in the IoE ecosystem Invited Dr. Francesco Puglisi - Università di Modena e Reggio Emilia, Italy

Wafer-Scale Epitaxial 2D Transition Metal Dichalcogenides for High-Performance Scaled Transistors Invited Dr. Yuanyuan Shi - IMEC, Belgium

Analysis for the Physical Mechanism of the Abnormal Increase of Pitfalls for the Characterization of Self-Heating Effect in Nano- Idsat in NMOS under HCI E1.1 E1.7 Scaled Devices Wei-Cheng Chu, Bo-An Tsai, Cheng-Te. Chen, Chi-Li Chang, Wei- Dongxing Zhang , Pengpeng Ren, Zhigang Ji (ID 5) fong Lin (ID 97) Shanghai Jiaotong University, China Powerchip Semiconductor Manufacturing Corp., Taiwan

Physical Mechanism for Different Phases and Turn-Around of A Reliability-Concerned Compute-in-Memory Behavior Model for E1.2 Idsat in PMOS under HCI Stress E1.8 Convolutional Neural Network Bo-An Tsai, Wei-Cheng Chu, Yu-Chih Chang, Yi-Heng Chen, Chien- Kaili Cheng , Jiahao Song, Xinyue Zhang, Yandong He, Runsheng (ID 6) Fu Chen (ID 102) Wang, Yuan Wang Powerchip Semiconductor Manufacturing Corp., Taiwan Peking University, China Comparison of DC/AC Hot Carrier Degradation between Short Channel Si Bulk and SiGe SOI p-FinFETs 1,3 1,3 1,3 2 Influence of RPO Film and CESL Material on Data Retention in Hao Chang , Yongkui Zhang , Longda Zhou , Zhigang Ji , 1,3 1,3 1,3 4 E1.3 Non-Volatile Memory E1.9 Hong Yang , Qianqian Liu , Yongliang Li , Renrong Liang , (ID 32) Yen-Ting Chen, Ming-Shan Lo (ID 104) Eddy Simoen 5 , Huilong Zhu 1,3 , Jun Luo 1,3 ,Wenwu Wang 1,3 eMemory Technology Inc., Taiwan 1 Chinese Academy of Science, China, 2 Shanghai Jiaotong University, China, 3 University of Chinse Academy of Sciences, China, 4 Tsinghua University, China, 5 IMEC, Belgium

Analysis of The Threshold Voltage Instability under Semi-ON Hot NAND Flash Relationship Between the Initial State of Non- Electron Stress in AlGaN/GaN High Electron Mobility Transistor Volatile Memory Cycling Endurance and the High Temperature 1 1 1 1 E1.4 E1.10 Fong-Min Ciou , Yu-Shan Lin , Jia-Hong Lin , Ting-Tzu Kuo , Jui- Data Retention Ability of Post Cycling (ID 46) (ID 114) Tse Hsu 2 , Po-Hsun Chen 3 , Ting-Chang Chang 1 Chia-Sheng Huang, Yun-Chi Liao 1 2 Powerchip Semiconductor Manufacturing Corp., Taiwan National Sun Yat-sen University, Taiwan, National Tsing Hua University, Taiwan, 3 R. O. C. Naval Academy, Taiwan,

A Comprehensive Negative Bias Temperature Instability Model Degradation Studies on 8-Layer 3D Vertical Resistive Random for Gallium-nitride Metal-insulator-semiconductor High Electron Access Memory Under Moisture Mobility Transistors From 77K to 393K Dengyun Lei 1 , Huiwei Wu 1 , Yiqiang Chen 1 , Yun Huang 1 , Yunfei E1.5 1 1 1 E1.11 1 2 3 1 Ting-Tzu Kuo , Ying-Chung Chen , Yu-Shan Lin , Yu-Chieh En , Qiantong Guo , Feng Zhang , Rui Gao 2 1 3 1 (ID 72) Chien , Fong-Min Ciou , Po-Hsun Chen , and Ting-Chang Chang (ID 117) 1 The No.5 Electronics Research Institute of the Ministry of Industry 1 2 National Sun Yat-sen University, Taiwan, National University of and Information Technology, China, 2 China Electronics 3 Singapore, Singapore, R. O. C. Naval Academy, Taiwan Corporation, China, 3 Chinese Academy of Sciences, China

Study of Layout Effect on Gate Oxide TDDB in Sub-16nm FinFET Technology E1.6 HCI SOA Enhancement for EDNMOS with Metal Field Plate E1.12 J.M. Soon , P.Y. Tan, C.W. Eng, M.Cai, M.Li Xiangyu Liu 1 , Yongsheng Sun 1 , Junlin Huang 1 , Changze Liu 1 , (ID 83) (ID 133) GlobalFoundries, Singapore Xiaolu Shang 1 Hisilicon Technologies Co., China

E2. Interconnect and Packaging Reliability

BEOL Reliability Challenges in Advanced Nodes for Automotive Applications Invited Dr Markus Herklotz - GlobalFoundries, Germany

Rapid Assessment of Semiconductor Thermal Quality Failure Mechanism of Stress Migration in Via Sidewall for Dual 1 2 3 Voon Hon Wong , Andras Vass-Varnai , Antonio Caruso , Young E2.1 Damascene Cu Interconnection E2.5 Joon Cho 4 , Yong Seoung Lee 4 , Kwon Hyung Lee 4 (ID 17) Yu Chun Teng , Liwei Yang (ID 96) 1 2 3 Powerchip Semiconductor Manufacturing Corp., Taiwan Siemens Digital Industry Software, Singapore. USA, Italy, 4 Republic of Korea

Temperature Cycling Failure Analysis and Improvement of A Panel Level Fan-out QFN Package Electromigration of Gold Metallization 1 1 2 2 1 1 E2.2 E2.6 Li Chen , Wei Gao , Yan Huo , Lei Xie , Yuyu Peng , Min Ren , Christine Hau-Riege , YouWen Yau Bo Zhang 1 (ID 37) Qualcomm Technologies, Inc., USA (ID 108) 1 University of Electronic Science and Technology of China, China, 2 SiPLP Microelectronics(Chongqing) Co., China

In-situ SEM Micromechanical Experiments on Dual Damascene Copper Test Structures for Investigation of Interfacial Properties of Copper Interconnects Analytical and Finite Element Study on Warpage and Stress of Wieland Heyn 1 , Hanno Melzner 2 , Klaus Goller 2 , Sergey Ananiev 2 , 2.5D Chip-Package Structures E2.3 1 3 1 E2.7 1 1 1 2 André Clausner , Johannes Zechner , Ehrenfried Zschech , Sida Hao , Weishen Chu , Paul S. Ho , Joonsik Sohn Lee , Rui (ID 88) 1 Fraunhofer Institute for Ceramic Technologies and Systems IKTS, (ID 116) Huang 1 Germany, 2 Infineon Technologies AG, Germany, 1 University of Texas, USA, 2 Samsung Electronics, S.Korea 3 KAI Kompetenzzentrum Automobil- und Industrielektronik GmbH, Austria

Nano-CT Imaging of Electrically Stressed Power Device Metallization 1 2 3 2 Dominik Mueller , Christian Fella , Frank Altmann , Jonas Graetz , Electromigration Failure Controlled by Aging-like Gradual 2 4 4 E2.4 Andreas Balles , Matt Ring , Jeff Gambino E2.8 Resistance Shift in Co-Capped Cu Interconnects (ID 89) 1 University of Würzburg, Germany, 2 Fraunhofer Development Center (ID 134) Hui Zheng , Yongsheng Sun, Weichun Luo, Junlin Huang X-Ray Technology EZRT, Germany, 3 Fraunhofer Institute for Hisilicon, China Microstructure of Materials and Systems IMWS, Germany, 4 ON Semiconductor, USA Track F - ESD/Latchup, Photonics & High Power Reliability 14 September - 13 October 2021 ( Video On Demand )

F1. Photonics and High Power/Wide Bandgap Device Reliability and Failure Analysis

Wave Aspects in Laser Diode Catastrophic Optical Damages Invited Prof. Massimo Vanzi - University of Cagliari, Italy

Reliability and Characterization of GeSe OTS Selector Device Invited Prof. Weidong Zhang - Liverpool John Moores University, United Kingdom

Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology Research on the Design Factors Affecting the COG Mura of IPS Jethro Oroceo Gallardo 1 , Brice De Jaeger 2 , Sachidananda Dash 1 , Display Products 1 1 F1.1 F1.4 Shun-Wei Tang , Thanh Nga Tran , Bao Yazhou , YANG Gang, JIA Xingge, SONG Yong, YU Hongjun, (ID 29) (ID 87) Dirk Wellekens 2 , Benoit Bakeroot 2,3 , Stefaan Decoutere 2 , and Tian- CHE Chuncheng, XUE Hailin 1 Beijing BOE Optoelectronics Technology Co., China Li Wu 1 National Yang Ming Chiao Tung University, Taiwan 2 IMEC, Belgium, 3 IMEC and Ghent University, Belgium

Failure Analyses and Reliability Improvement of the Corner Region of Variation Lateral Doping Termination Analysis and Improvement of Repeated Wake-up Jittering H-line Min Ren 1 , Xuefan Zhang 1 , Xin Zhang 2 , Junwei Feng 1 , Yahan F1.2 Qiang Wang , Zhengxin Zhang, Ye Wang, Honggui Jin,Qi Sun,Yong F1.5 1 1 1 2 2 Yang , Youke Bai , Jiakang Fan , Rongyao Ma , Fang Zheng , (ID 50) Song, Hongjun Yu, Hailin Xue, Chuncheng Che (ID 110) 1 1 1 Beijing BOE Optoelectronics Technology Co., China Yining Ma , Zehong Li , Bo Zhang 1 University of Electronic Science and Technology of China, China, 2 Wuxi China Resources Huajing Microelectronics Co., China

Research on the Relationship between the Limit Design and Charge–Sensing method for Nickel Contamination Detection on Material of the LGP and the Damage of the LGP a 4H-SiC PowerMOSFET F1.3 Wang Shixin 1 , Yang Gang 1 , Song Yong 1 , Yu Hongjun 1 , Che F1.6 B. Mazza 1,2 , F. Cordiano 1 , M. Boscaglia 1 , V. Scuderi 1 , M. 1 1 2 (ID 71) Chuncheng , Xue Hailin , Wang Kai (ID 119) Frazzica 1 , R. Ricciari 1 , M. Poma 1 , C. Gagliano 1 , S. Patanè 2 1 Beijing BOE Optoelectronics Technology Co., China, 1 STMicroelectronics, Italy, 2 Beijing Digital Video Technology Co., China 2 Universita’ degli Studi di Messina, Italy

F2. ESD, Latchup and Reliability for Space Applications

Latchup: From the Beginning to Today Invited Dr. Stephen H Voldman - Voldman Consulting, USA

Analyze the ESD Performance and Bandwidth Difference for LC Study on Transmitter with Stacking-MOS Structure of Interface T-Network and Bridged T-Coil F2.1 Circuits for Cross-Domain CDM ESD Protection F2.3 1 1 2 Jian-Hsing Lee , Karuna Nidhi , Natarajan Mahadeva Iyer (ID 14) Cheng-Yun Hsueh , Ming-Dou Ker (ID 53) 1 National Yang Ming Chiao Tung University, Taiwan Vanguard International Semiconductor Corp., Taiwan 2 Allegro Microsystems Inc., USA

Research on reducing electro-static discharge of tearing film of HV ESD Device Solution Evaluations in 55nm BCD Technology Sagar P Karalkar 1 , Milova Paul 1 , Xiao Mei Elaine Low 1 , Kyong Jin F2.2 EPD F2.4 Haowei Zou , Xin Li, Yong song, Hanqing Liu, Junru Ma, Hongjun Yu, Hwang 1 , Robert Gauthier Jr 2 (ID 27) (ID 112) 1 Chuncheng Che, Hailin Xue GlobalFoundries, Singapore BOE Optoelectronic Technology Co., China 2 GlobalFoundries, USA

F2.5 Electrostatic Discharge Switch Simulation Enablement in RF SOI Technologies Mengfu Di , Anindya Nath, Meng Miao, XiangXiang Lu, Lin Lin, Robert Gauthier (ID 126) GlobalFoundries Corporation, USA

Note : IPFA 2021 Technical Program is tentative and subjected to changes