Development of a Multi-Objective Evolutionary Algorithm for Strain-Enhanced Quantum Cascade Lasers
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DFB Lasers Between 760 Nm and 16 Μm for Sensing Applications
Sensors 2010, 10, 2492-2510; doi:10.3390/s100402492 OPEN ACCESS sensors ISSN 1424-8220 www.mdpi.com/journal/sensors Review DFB Lasers Between 760 nm and 16 µm for Sensing Applications Wolfgang Zeller *, Lars Naehle, Peter Fuchs, Florian Gerschuetz, Lars Hildebrandt and Johannes Koeth nanoplus Nanosystems and Technologies GmbH, Oberer Kirschberg 4, 97218 Gerbrunn, Germany; E-Mails: [email protected] (L.N.); [email protected] (P.F.); [email protected] (F.G.); [email protected] (L.H.); [email protected] (J.K.) * Author to whom correspondence should be addressed; E-Mail: [email protected]; Tel.: +49-931-90827-10; Fax: +49-931-90827-19. Received: 20 January 2010; in revised form: 22 February 2010 / Accepted: 6 March 2010 / Published: 24 March 2010 Abstract: Recent years have shown the importance of tunable semiconductor lasers in optical sensing. We describe the status quo concerning DFB laser diodes between 760 nm and 3,000 nm as well as new developments aiming for up to 80 nm tuning range in this spectral region. Furthermore we report on QCL between 3 µm and 16 µm and present new developments. An overview of the most interesting applications using such devices is given at the end of this paper. Keywords: DFB; laser; QCL; sensing Classification: PACS 42.55.Px; 42.62.Fi; 42.62.-b 1. Introduction In recent years the importance of lasers in optical sensing has been continuously increasing [1]. Many apparatus use long-known techniques like fluorescence measurements after excitation by photons, e.g., to detect petroleum contamination in soils [2]. -
Quantum Cascade Laser-Based Substance Detection: Approaching the Quantum Noise Limit
Quantum cascade laser-based substance detection: approaching the quantum noise limit Peter C. Kuffnera, Kathryn J. Conroya, Toby K. Boysona, Greg Milford,a Mohamed A. Mabrok,a Abhijit G. Kallapura, Ian R. Petersena, Maria E. Calzadab, Thomas G. Spence,c Kennith P. Kirkbrided and Charles C. Harb a a School of Engineering and Information Technology, University College, The University of New South Wales, Canberra, ACT, 2600, Australia. b Department of Mathematical Sciences, Loyola University New Orleans, New Orleans, LA, 70118, USA. c Department of Chemistry, Loyola University New Orleans, New Orleans, LA, 70118, USA. d Forensic and Data Centres, Australian Federal Police, Weston, ACT, 2611, Australia. ABSTRACT A consortium of researchers at University of New South Wales (UNSW@ADFA), and Loyola University New Orleans (LU NO), together with Australian government security agencies (e.g., Australian Federal Police), are working to develop highly sensitive laser-based forensic sensing strategies applicable to characteristic substances that pose chemical, biological and explosives (CBE) threats. We aim to optimise the potential of these strategies as high-throughput screening tools to detect prohibited and potentially hazardous substances such as those associated with explosives, narcotics and bio-agents. Keywords: Quantum Cascade laser, Trace gas detection, Cavity Ringdown Spectroscopy, IR detection, Foren- sics 1. INTRODUCTION Analysis of bulk organic explosives is a straightforward task for well-equipped forensic laboratories, but it is more difficult to analyse trace amounts of organic explosive residues (particularly in highly-contaminated post- blast samples); this usually requires an elaborate sequence of solvent extraction from swabs and some form of chromatographic or electrophoretic separation. -
Arxiv:1010.1610V1 [Physics.Ins-Det] 8 Oct 2010 Ai Mouneyrac, David Emndtetm Osat O H Rpigadde- and Illumination
Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs and 4H-SiC semiconductors under light illumination at cryogenic temperatures David Mouneyrac,1,2 John G. Hartnett,1 Jean-Michel Le Floch,1 Michael E. Tobar,1 Dominique Cros,2 Jerzy Krupka3∗ 1School of Physics, University of Western Australia 35 Stirling Hwy, Crawley 6009 WA Australia 2Xlim, UMR CNRS 6172, 123 av. Albert Thomas, 87060 Limoges Cedex - France 3Institute of Microelectronics and Optoelectronics Department of Electronics, Warsaw University of Technology, Warsaw, Poland (Dated: October 27, 2018) We report on extremely sensitive measurements of changes in the microwave properties of high purity non-intentionally-doped single-crystal semiconductor samples of gallium phosphide, gallium arsenide and 4H-silicon carbide when illuminated with light of different wavelengths at cryogenic temperatures. Whispering gallery modes were excited in the semiconductors whilst they were cooled on the coldfinger of a single-stage cryocooler and their frequencies and Q-factors measured under light and dark conditions. With these materials, the whispering gallery mode technique is able to resolve changes of a few parts per million in the permittivity and the microwave losses as compared with those measured in darkness. A phenomenological model is proposed to explain the observed changes, which result not from direct valence to conduction band transitions but from detrapping and retrapping of carriers from impurity/defect sites with ionization energies that lay in the semicon- ductor band gap. Detrapping and retrapping relaxation times have been evaluated from comparison with measured data. PACS numbers: 72.20.Jv 71.20.Nr 77.22.-d I. -
Basic Light Emitting Diodes
The following is for information purposes only and comes with no warranty. See http://www.bristolwatch.com/ Light Emitting Diodes Light Emitting Diodes are made from compound type semiconductor materials such as Gallium Arsenide (GaAs), Gallium Phosphide (GaP), Gallium Arsenide Phosphide (GaAsP), Silicon Carbide (SiC) or Gallium Indium Nitride (GaInN). The exact choice of the semiconductor material used will determine the overall wavelength of the photon light emissions and therefore the resulting color of the light emitted, as in the case of the visible light colored LEDs, (RED, AMBER, GREEN etc). Before a light emitting diode can "emit" any form of light it needs a current to flow through it, as it is a current dependent device. As the LED is to be connected in a forward bias condition across a power supply it should be Current Limited using a series resistor to protect it from excessive current flow. From the table above we can see that each LED has its own forward voltage drop across the PN junction and this parameter which is determined by the semiconductor material used is the forward voltage drop for a given amount of forward conduction current, typically for a forward current of 20mA. In most cases LEDs are operated from a low voltage DC supply, with a series resistor to limit the forward current to a suitable value from say 5mA for a simple LED indicator to 30mA or more where a high brightness light output is needed. Typical LED Characteristics Semiconductor Material Wavelength Color voltage at 20mA GaAs 850-940nm Infra-Red 1.2v GaAsP 630-660nm Red 1.8v GaAsP 605-620nm Amber 2.0v GaAsP:N 585-595nm Yellow 2.2v GaP 550-570nm Green 3.5v SiC 430-505nm Blue 3.6v GaInN 450nm White 4.0v 1 Multi-LEDs LEDs are available in a wide range of shapes, colors and various sizes with different light output intensities available, with the most common (and cheapest to produce) being the standard 5mm Red LED. -
The Low-Temperature Catalyzed Etching of Gallium Arsenide with Hydrogen Chloride Jeffrey L
The low-temperature catalyzed etching of gallium arsenide with hydrogen chloride Jeffrey L. Dupuie and Erdogan Gulari Department of Chemical Engineering, The University of Michiggn, Ann Arbor, Michigan 48109 (Received 18 September 1991; accepted for publication 10 January 1992) A heated tungsten filament has been used to catalyze the gas phase etching of gallium arsenide with hydrogen chloride at a substrate temperature of 563 K. Rapid etch rates, between 1 and 3 microns per minute, were obtained in a pure hydrogen chloride ambient in the pressure range of 3.3 to 20.0 Pascal. Low flow rates of hydrogen quenched the etching reaction, and resulted in degradation of the quality of the etched gallium arsenide surface. Dilution of the hydrogen chloride to 10.5% in helium reduced the etch rate to 63 nanometers per minute. The removal of 83 nm of gallium arsenide with the helium-diluted gas mixture resulted in a specular surface. X-ray photoelectron spectroscopy indicated that the gallium arsenide surface became enriched in gallium after the etch in helium-diluted hydrogen chloride. No tungsten or other metal contamination on the etched gallium arsenide surface was detected by x-ray photoelectron spectroscopy. BACKGROUND We reported previously that high purity aluminum ni- tride and silicon nitride films could be deposited by low- Development of a dielectric deposition scheme for the pressure chemical vapor deposition (LPCVD) at low sub- fabrication of viable gallium arsenide metal-insulator- strate temperatures through the catalytic action of a heated semiconductor devices will probably include an in situ sur- filament.5’6 In this process, a heated tungsten filament is face pretreatment prior to dielectric deposition due to a used to decompose ammonia. -
New Frontiers in Quantum Cascade Lasers
Physica Scripta INVITED COMMENT Related content - External cavity terahertz quantum cascade New frontiers in quantum cascade lasers: high laser sources based on intra-cavity frequency mixing with 1.2–5.9 THz tuning range performance room temperature terahertz sources Yifan Jiang, Karun Vijayraghavan, Seungyong Jung et al. To cite this article: Mikhail A Belkin and Federico Capasso 2015 Phys. Scr. 90 118002 - Novel InP- and GaSb-based light sources for the near to far infrared Sprengel Stephan, Demmerle Frederic and Amann Markus-Christian - Recent progress in quantum cascade View the article online for updates and enhancements. lasers andapplications Claire Gmachl, Federico Capasso, Deborah L Sivco et al. Recent citations - Optical external efficiency of terahertz quantum cascade laser based on erenkov difference frequency generation A. Hamadou et al - Distributed feedback 2.5-terahertz quantum cascade laser with high-power and single-mode emission Jiawen Luo et al - H. L. Hartnagel and V. P. Sirkeli This content was downloaded from IP address 128.103.224.178 on 26/05/2020 at 19:55 | Royal Swedish Academy of Sciences Physica Scripta Phys. Scr. 90 (2015) 118002 (13pp) doi:10.1088/0031-8949/90/11/118002 Invited Comment New frontiers in quantum cascade lasers: high performance room temperature terahertz sources Mikhail A Belkin1 and Federico Capasso2 1 Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712, USA 2 Harvard University, School of Engineering and Applied Sciences, 29 Oxford St., Cambridge, MA 02138, USA E-mail: [email protected] and [email protected] Received 19 June 2015, revised 25 August 2015 Accepted for publication 11 September 2015 Published 2 October 2015 Abstract In the last decade quantum cascade lasers (QCLs) have become the most widely used source of mid-infrared radiation, finding large scale applications because of their wide tunability and overall high performance. -
LOW LOSS ORIENTATION-PATTERNED GALLIUM ARSENIDE (Opgaas)
LOW LOSS ORIENTATION-PATTERNED GALLIUM ARSENIDE (OPGaAs) WAVEGUIDES FOR NONLINEAR INFRARED FREQUENCY CONVERSION Dissertation Submitted to The School of Engineering of the UNIVERSITY OF DAYTON In Partial Fulfillment of the Requirements for The Degree of Doctor of Philosophy in Electrical and Computer Engineering By Izaak Vincent Kemp Dayton, Ohio December 2012 LOW LOSS ORIENTATION-PATTERNED GALLIUM ARSENIDE (OPGaAs) WAVEGUIDES FOR NONLINEAR INFRARED FREQUENCY CONVERSION Name: Kemp, Izaak Vincent APPROVED BY: Dr. Andrew Sarangan Dr. Peter Powers Advisory Committee Chairman Committee Member Professor Professor Electrical and Computer Engineering Department of Physics Dr. Partha Banerjee Dr. Guru Subramanyam Committee Member Committee Member Professor Department Chair Electrical and Computer Engineering Electrical and Computer Engineering Dr. Rita Peterson Dr. Kenneth Schepler Committee Member Committee Member Adjunct Professor Adjunct Professor Electro-Optics Electro-Optics John G. Weber, Ph.D. Tony E. Saliba, Ph.D. Associate Dean Dean, School of Engineering School of Engineering &Wilke Distinguished Professor ii © Copyright by Izaak Vincent Kemp All rights reserved 2012 iii Distribution Statement A: Approved for public release, distribution is unlimited. This dissertation contains information regarding currently ongoing U.S. Department of Defense (DoD) research that has been approved for public release. Distribution of this dissertation is unlimited pursuant to DoD Directive 5230.24 subsection A4. Requests for further information may be referred to the author, Izaak V. Kemp AFRL/RYMWA. iv ABSTRACT LOW LOSS ORIENTATION-PATTERNED GALLIUM ARSENIDE (OPGaAs) WAVEGUIDES FOR NONLINEAR INFRARED FREQUENCY CONVERSION Name: Kemp, Izaak Vincent University of Dayton Advisor: Dr. Andrew Sarangan The mid-IR frequency band (λ = 2-5 μm) contains several atmospheric transmission windows making it a region of interest for a variety of medical, scientific, commercial, and military applications. -
Gallium Arsenide and Related Compounds for Device Applications
l 79 (1991 ACTA YSICA OOICA Α 1 oc I Ieaioa Scoo o Semicoucig Comous asowiec 199 GALLIUM ARSENIDE AND RELATED COMPOUNDS FOR DEVICE APPLICATIONS WOO Uiesiy o Yok e o Eecoics esigo Yok YO 5 UK A MOGA Uiesiy o Waes Coege o Cai Cai UK (eceie Augus 199θ e eice aicaios o gaium aseie a eae I— comou a aoy semicoucos ae eiewe A age o eecoic eices is escie a e cue sae o e a eomace is iicae o eac ye o eice e eices wic wi e escie ae asee eeco eices - as osciaos u o G GaAs MESEs — e wokose micowae soi sae eice some mooiic micowae iegae cicui /MMIC/ a eeoucio eices e use o moecua eam eiay ME o gow I- semicoucos wi gea coo oe e oig moe acio o e cosiues a e ickess o e eiaye as emie e cosucio o eices wi aomicay au ieaces ewee egios o iee o- ig a aoy e eecoic eices wic make use o suc au ee o -ucios icue ig eeco moiiy asisos eeoucio ioa asiso a ase ioes A ume o oe eices ase o muie aie a quaum we sucues is aso escie icuig esoa ueig eices ACS umes 7Ey 73Κρ 7s Intrdtn Gaium aseie a eae III- comous wee is iesigae as semicoucig maeias oe iy yeas ago e maeia oeies o ese comous ossess some oa simiaiies wi ose o a aceya semi- couco siico ey ae a simia cysaie sucue a e ieaomic oig is agey coae [1] u e III— comous wee aso ecogise o (97 9 Woo Mogα ei oica a eecoic oeies suc as a iec a ga a ig eeco moiiy a wee o ou i siico o gemaium ese oeies e e omise o ew a uique eices suc as ig eiciecy ig emies a ig sesos a ig see swicig eices ies wee siico cou o eaiy comee e easos ei ese eecoic a oica oeies a e cose- que iees i gaium aseie GaAs a simia III- comous ie i e eaie aue o ei eeco eegy a sucues akig GaAs as yica o III— semicoucos i wic we ae ieese Gallium arsenide has a direct energy band gap. -
High Power Spatial Single-Mode Quantum Cascade Lasers at 8.9 Μm
High power spatial single-mode quantum cascade lasers at 8.9 µm S.Forget, C.Faugeras, J-Y.Bengloan, M.Calligaro, O.Parillaud, M.Giovannini, J.Faist and C.Sirtori Abstract : High performance of InP-based quantum cascade lasers emitting at λ ≈ 9µm are reported. Thick electroplated gold layer was deposited on top of the laser to improve heat dissipation. With one facet high reflection coated, the devices produce a maximum output power of 175mW at 40% duty cycle at room temperature and continuous-wave operation up to 278K. Introduction : Since their first demonstration in 1994 [1], the quantum cascade laser [2] (QCL) is one of the most promising mid- and far-infrared wavelength coherent light source. Its performances in terms of power and operating temperature have been continuously improved and the range of available wavelengths extended. These unipolar lasers are able to cover the wavelength range from 3 to more than 100 µm, and more specifically operate efficiently in the two atmospheric windows (3-5 µm and 8-14µm). Those mid-IR lasers are needed for chemical sensing, free-space optical communications or spectroscopy [3, 4]. These applications require high power, room temperature continuous wave (CW) operation with a diffraction limited laser beam. We report on devices based on InP substrates with a GaInAs/AlInAs active region have proved to be the most efficient material system with regard to the emitted power and CW operation [5]. The main difficulty on the route to high power and CW operation at room temperature is the large amount of heat that must be dissipated in the device. -
Characterization and Applications of Low-Temperature-Grown MBE Gallium
AN ABSTRACT OF THE THESIS OF Pin Zhao for the degree of Master of Science in Materials Science through the Department of Electrical & Computer Engineering presented on January 14, 1994. Title:Characterization and Applications of Low-Temperature-Grown MBE Gallium Arsenide. Redacted for privacy Abstract approved: Thomas K. Plant Low-temperature (LT) MBE-grown GaAs material has recently been used for fast response, low dark current photodetectors.The material contains a high concentration of As precipitates which appear to act as spherical Schottky barriers with overlapping depletion regions making the GaAs semi-insulating. In this work, the electrical and optical characteristics of LT-GaAs are studied in p-i-n diodes, MSM photoconductors, and a new modulation-doped photoconductor using LT-GaAs grown at 225 °C, 300 °C, and 350 °C. The goal of this work was to measure the transport properties of LT-GaAs to resolve an ambiguity in the literature. Direct Hall mobility measurements proved unreliable due to high resistivity even in photoexcited samples. From the I-V behavior ofp-i-n diodes, an estimate of carrier lifetime ranging from 4 ps to 130 ps for growth temperatures from 225 °C to 350 °C was made. MSM photoconductors fabricated on the LT-GaAs showed sub-nanosecond response and no evidence of the long tail always found in MSM photodetectors on semi-insulating GaAs. The new modulation-doped LT-GaAs photoconductor shows a gain of 300, a mobility of 500 cm2 / Vs, and a response to wavelengths longer than 1500 nm. There appears to be both a transient, trap-related transport mechanism and a steady-state, recombination-related transport mechanism with significantly different properties. -
Continuous-Wave Room-Temperature Inas Quantum Cascade Laser
86 Technology focus: Lasers Continuous-wave room-temperature InAs quantum cascade laser Doping profile used to red-shift optically pumped long-wavelength quantum well. niversity of Montpellier in France has claimed Uthe first continuous- wave (cw) operation at room temperature of a 15µm indium arsenide (InAs) quantum cascade laser (QCL) [Alexei N. Baranov et al, Optics Express, vol. 24, p18799, 2016]. “To our knowledge, the longest emission wavelength of RT cw operation for QCLs fabricated from other materials is 12.4µm,” the team reports. The thresholds are also claimed to be the lowest to-date for InAs QCLs. “One of the reasons of this progress can be attributed to the reduction of optical losses both in the waveguide itself and in the laser active region Figure 1. Threshold current density (circles) and initial slope of light-current due to the decreased doping curves (squares) in pulsed mode as a function of temperature for lasers and shorter operating wave- with different ridge width: full symbols, 16µm; open symbols 20µm. Inset: length and thus weaker free emission spectra of 16µm-wide laser at room temperature and at 400K. carrier absorption,” the team comments. perature. The pulsed threshold current density (Jth) The cascade consisted of 55 active stages with InAs varied between 1.22kA/cm2 for a QCL with a 8µm-wide wells and aluminium antimonide (AlSb) barriers. ridge and 0.73kA/cm2 for one with a 20µm ridge. The doping of the active region was reduced by 6x The researchers comment: “The higher Jth in narrow compared with a previous device reported by the devices is due to a larger overlap of the optical mode same researchers. -
Algaas-On-Insulator Nonlinear Photonics
AlGaAs-On-Insulator Nonlinear Photonics Minhao Pu*, Luisa Ottaviano, Elizaveta Semenova, and Kresten Yvind** DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, Building 343, DK-2800 Lyngby, Denmark *[email protected]; **[email protected] The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators1 as the most significant achievement. Efficient nonlinear photonic chips have myriad applications including high speed optical signal processing2,3, on-chip multi-wavelength lasers4,5, metrology6, molecular spectroscopy7, and quantum information science8. Aluminium gallium arsenide (AlGaAs) exhibits very high material nonlinearity and low nonlinear loss9,10 when operated below half its bandgap energy. However, difficulties in device processing and low device effective nonlinearity made Kerr frequency comb generation elusive. Here, we demonstrate AlGaAs-on-insulator as a nonlinear platform at telecom wavelengths. Using newly developed fabrication processes, we show high-quality-factor (Q>105) micro-resonators with integrated bus waveguides in a planar circuit where optical parametric oscillation is achieved with a record low threshold power of 3 mW and a frequency comb spanning 350 nm is obtained. Our demonstration shows the huge potential of the AlGaAs-on-insulator platform in integrated nonlinear photonics. Desirable material properties for all-optical χ(3) nonlinear chips are a high Kerr nonlinearity and low linear and nonlinear losses to enable high four-wave mixing (FWM) efficiency and parametric gain. Many material platforms have been investigated showing the different trade-offs between nonlinearity and losses2-5,11-16. In addition to good intrinsic material properties, the ability to perform accurate and high yield processing is desirable in order to integrate additional functionalities on the same chip and also to decrease linear losses.