Atomic Layer Deposition for Semiconductors Atomic Layer Deposition for Semiconductors Cheol Seong Hwang • Cha Young Yoo Editors
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Brno University of Technology
BRNO UNIVERSITY OF TECHNOLOGY Faculty of Chemistry DOCTORAL THESIS Brno, 2016 Ing. Tomá Solný BRNO UNIVERSITY OF TECHNOLOGY VYSOKÉ UENÍ TECHNICKÉ V BRN FACULTY OF CHEMISTRY FAKULTA CHEMICKÁ INSTITUTE OF MATERIALS SCIENCE ÚSTAV CHEMIE MATERIÁL SYNTHESIS AND PHOTOCATALYTIC APPLICATIONS OF TITANIUM DIOXIDE PÍPRAVA A APLIKACE FOTOKATALYTICKY AKTIVNÍHO OXIDU TITANIITÉHO DOCTORAL THESIS DIZERTANÍ PRÁCE AUTHOR Ing. Tomá Solný AUTOR PRÁCE SUPERVISOR doc. Ing. Petr Ptáek, Ph.D. KOLITEL BRNO 2016 ABSTRACT Hydrolysis conditions for different Ti-alkoxides were examined considering the impact of water to alkoxide ratio and temperature. The prepared hydrolysates and sintered TiO2 nanoparticles were examined with XRD, DTA – TGA, SEM – EDS, BET and PCCS analysis in order to identify the impact of hydrolysis on properties of prepared anatase particles. Magnetite nanoparticles were synthetized by easy one step precipitation method from Mohr´s salt solution and their crystallinity, size and surface properties were examined investigating the influence of temperature and coating by polycarboxylate ether superplasticizer. For immobilization of TiO2 on surfaces of magnetite combined method using the selected nanoparticles of TiO2 and Ti-alkoxides hydrolysis is performed in order to obtain photocatalytically active core–shell powder catalysator with enhanced adsorptive properties. Also the investigation on the applications of TiO2 on surfaces of Mn-Zn ferrite is done with studying the surface treatment by CVD deposition of C and Au layer. Photocatalytic activity of selected prepared photocatalysators is evaluated upon decomposition of methylene blue and isopropanolic and ethanolic vapors for Mn-Zn ferrite in experimental chemical reactor with magnetically holded powdered photocatalysator beds. KEYWORDS: Titanium oxide, anatase, photocatalytic activity, core-shell powder photocatalysator, magnetite, Mn-Zn ferrite, Ti-alkoxides, hydrolysis, sol-gel, nanoparticles. -
Inventory Size (Ml Or G) 103220 Dimethyl Sulfate 77-78-1 500 Ml
Inventory Bottle Size Number Name CAS# (mL or g) Room # Location 103220 Dimethyl sulfate 77-78-1 500 ml 3222 A-1 Benzonitrile 100-47-0 100ml 3222 A-1 Tin(IV)chloride 1.0 M in DCM 7676-78-8 100ml 3222 A-1 103713 Acetic Anhydride 108-24-7 500ml 3222 A2 103714 Sulfuric acid, fuming 9014-95-7 500g 3222 A2 103723 Phosphorus tribromide 7789-60-8 100g 3222 A2 103724 Trifluoroacetic acid 76-05-1 100g 3222 A2 101342 Succinyl chloride 543-20-4 3222 A2 100069 Chloroacetyl chloride 79-04-9 100ml 3222 A2 10002 Chloroacetyl chloride 79-04-9 100ml 3222 A2 101134 Acetyl chloride 75-36-5 500g 3222 A2 103721 Ethyl chlorooxoacetate 4755-77-5 100g 3222 A2 100423 Titanium(IV) chloride solution 7550-45-0 100ml 3222 A2 103877 Acetic Anhydride 108-24-7 1L 3222 A3 103874 Polyphosphoric acid 8017-16-1 1kg 3222 A3 103695 Chlorosulfonic acid 7790-94-5 100g 3222 A3 103694 Chlorosulfonic acid 7790-94-5 100g 3222 A3 103880 Methanesulfonic acid 75-75-2 500ml 3222 A3 103883 Oxalyl chloride 79-37-8 100ml 3222 A3 103889 Thiodiglycolic acid 123-93-3 500g 3222 A3 103888 Tetrafluoroboric acid 50% 16872-11-0 1L 3222 A3 103886 Tetrafluoroboric acid 50% 16872-11-0 1L 3222 A3 102969 sulfuric acid 7664-93-9 500 mL 2428 A7 102970 hydrochloric acid (37%) 7647-01-0 500 mL 2428 A7 102971 hydrochloric acid (37%) 7647-01-0 500 mL 2428 A7 102973 formic acid (88%) 64-18-6 500 mL 2428 A7 102974 hydrofloric acid (49%) 7664-39-3 500 mL 2428 A7 103320 Ammonium Hydroxide conc. -
Atomic Layer Deposition of High-K Insulators on Epitaxial Graphene: a Review
applied sciences Review Atomic Layer Deposition of High-k Insulators on Epitaxial Graphene: A Review Filippo Giannazzo 1,* , Emanuela Schilirò 1,*, Raffaella Lo Nigro 1, Fabrizio Roccaforte 1 and Rositsa Yakimova 2 1 CNR-IMM, Strada VIII, 5 95121 Catania, Italy; raff[email protected] (R.L.N.); [email protected] (F.R.) 2 Department of Physics Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden; [email protected] * Correspondence: fi[email protected] (F.G.); [email protected] (E.S.) Received: 7 March 2020; Accepted: 27 March 2020; Published: 3 April 2020 Featured Application: Graphene-based electronics and sensing. Abstract: Due to its excellent physical properties and availability directly on a semiconductor substrate, epitaxial graphene (EG) grown on the (0001) face of hexagonal silicon carbide is a material of choice for advanced applications in electronics, metrology and sensing. The deposition of ultrathin high-k insulators on its surface is a key requirement for the fabrication of EG-based devices, and, in this context, atomic layer deposition (ALD) is the most suitable candidate to achieve uniform coating with nanometric thickness control. This paper presents an overview of the research on ALD of high-k insulators on EG, with a special emphasis on the role played by the peculiar electrical/structural properties of the EG/SiC (0001) interface in the nucleation step of the ALD process. The direct deposition of Al2O3 thin films on the pristine EG surface will be first discussed, demonstrating the critical role of monolayer EG uniformity to achieve a homogeneous Al2O3 coverage. -
Open Cyphersthesis FINAL.Pdf
The Pennsylvania State University The Graduate School College of Engineering RESEARCH ON LOW FREQUENCY COMPOSITE TRANSDUCERS FABRICATED USING A SOL-GEL SPRAY-ON METHOD A Thesis in Engineering Science by Robert L. Cyphers c 2012 Robert L. Cyphers Submitted in Partial Fulfillment of the Requirements for the Degree of Master of Science December 2012 The thesis of Robert L. Cyphers was reviewed and approved∗ by the following: Bernhard R. Tittmann Schell Professor of Engineering Science and Mechanics Thesis Advisor Clifford Lissenden Professor of Engineering Science and Mechanics Mark W. Horn Professor of Engineering Science and Mechanics Judith A. Todd Professor of Engineering Science and Mechanics // P. B. Breneman Department Head Head of the Department of Engineering Science and Mechanics ∗Signatures are on file in the Graduate School. Abstract Ultrasonic nondestructive evaluation is currently used in countless applications to maintain a system's operational integrity. Piezoelectric transducers are the devices commonly used in this field to search for defects. A sol-gel fabrication method utilizing a spray-on deposition method has proven to produce ultrasonic transducers useful in harsh environments. This procedure produces thin film transducers, which adhere directly to a substrate making it favorable in use with irregular surface geometries. These transducers operate at relatively high frequencies due to their minute thickness. The objective of this research is to investigate the ability for low frequency operation into the low kilohertz range. Depositing thicker layers of piezoelectric composites, including bismuth titanate and lead zirconate titanate, led to adhesion problems between the metal substrates and ceramic material. Delamination of the piezoelectric elements was determined to be caused by a large mismatch in thermal expansion coefficients. -
High Temperature Ultrasonic Transducers: a Review
sensors Review High Temperature Ultrasonic Transducers: A Review Rymantas Kazys * and Vaida Vaskeliene Ultrasound Research Institute, Kaunas University of Technology, Barsausko st. 59, LT-51368 Kaunas, Lithuania; [email protected] * Correspondence: [email protected] Abstract: There are many fields such as online monitoring of manufacturing processes, non-destructive testing in nuclear plants, or corrosion rate monitoring techniques of steel pipes in which measure- ments must be performed at elevated temperatures. For that high temperature ultrasonic transducers are necessary. In the presented paper, a literature review on the main types of such transducers, piezoelectric materials, backings, and the bonding techniques of transducers elements suitable for high temperatures, is presented. In this review, the main focus is on ultrasonic transducers with piezoelectric elements suitable for operation at temperatures higher than of the most commercially available transducers, i.e., 150 ◦C. The main types of the ultrasonic transducers that are discussed are the transducers with thin protectors, which may serve as matching layers, transducers with high temperature delay lines, wedges, and waveguide type transducers. The piezoelectric materi- als suitable for high temperature applications such as aluminum nitride, lithium niobate, gallium orthophosphate, bismuth titanate, oxyborate crystals, lead metaniobate, and other piezoceramics are analyzed. Bonding techniques used for joining of the transducer elements such as joining with glue, soldering, -
Bandgap Engineering of Titanium Based Oxynitride Thin Films and Molybdenum Disulfide Thin Films for Photovoltaic Applications
FROESCHLE, MICHAEL R., M.S. Bandgap Engineering of Titanium Based Oxynitride Thin Films and Molybdenum Disulfide Thin Films for Photovoltaic Applications. (2019) Directed by Dr. Hemali P. Rathnayake. 70 pp. The purpose of this project was to investigate the potential of two different material systems for the improvement of solar cell efficiency; one based on a titanium oxynitride system and the other molybdenum disulfide. Both phases of the project utilized different fabrication methods and approach in designing the photovoltaic devices. For the titanium based system (TiNO), thin films were formed using pulsed laser deposition, a phase vapor deposition (PVD) technique. The photovoltaic cells deposited on ITO coated glass with copper electrodes yielded an average power conversion efficiency (PCE) of 4.47%, with a fill factor (FF) of 0.246, open circuit 2 voltage (Voc) of 0.18 V, and a short circuit current density (Jsc) of 58.43 mA/cm . XRD and XPS results provide insight into the materials composition and give evidence of multiple bandgap mediated transfer of charge carriers. For the molybdenum based device, monolayer molybdenum disulfide was incorporated into a current organic-based solar cell (OSC) as an electron transport layer. The active layer consists of a blend of donor Poly(3-hexylthiophene-2,5- diyl) and acceptor PCBM. MoS2 incorporated devices showed improved PCE, at 0.88% compared to that of the control samples which yielded a PCE of 0.22%. BANDGAP ENGINEERING OF TITANIUM BASED OXYNITRIDE THIN FILMS AND MOLYBDENUM DISULFIDE THIN FILMS FOR PHOTOVOLTAIC APPLICATIONS by Michael R. Froeschle A Thesis Submitted to the Faculty of The Graduate School at The University of North Carolina at Greensboro in Partial Fulfillment of the Requirements for the Degree Master of Science Greensboro 2019 Approved by _______________________________ Committee Chair APPROVAL PAGE This thesis written by Michael R. -
WO 2017/031289 Al 23 February 2017 (23.02.2017) P O P C T
(12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (10) International Publication Number (43) International Publication Date WO 2017/031289 Al 23 February 2017 (23.02.2017) P O P C T (51) International Patent Classification: (81) Designated States (unless otherwise indicated, for every A01N 25/04 (2006.01) A01N 25/24 (2006.01) kind of national protection available): AE, AG, AL, AM, A 59/00 (2006.01) AOIN25/26 (2006.01) AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, A0 33/12 (2006.01) BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, (21) International Application Number: HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, PCT/US20 16/047509 KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, (22) International Filing Date: MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, 18 August 2016 (18.08.2016) PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, (25) Filing Language: English TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (26) Publication Language: English (84) Designated States (unless otherwise indicated, for every (30) Priority Data: kind of regional protection available): ARIPO (BW, GH, 62/207,750 20 August 2015 (20.08.2015) US GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, (71) Applicant: INTEGRICOTE, INC. -
Integrated Sustainability Analysis of Atomic Layer Deposition for Microelectronics Manufacturing
Integrated Sustainability Analysis of Atomic Layer Deposition for Microelectronics Manufacturing Chris Y. Yuan Atomic layer deposition (ALD) is a promising nanotechnology for wide applications in e-mail: [email protected] microelectronics manufacturing due to its ability to control layer growth at atomic scale. Sustainability of ALD technology needs to be quantitatively investigated in this early David A. Dornfeld development stage to improve its economic and environmental performance. In this pa- e-mail: [email protected] per, we present an integrated sustainability analysis of ALD technology through material and energy flow analyses. The study is performed on the ALD of Al2O3 high- dielectric Department of Mechanical Engineering, film through trimethylaluminum and water binary reactions. The precursor utilizations, University of California, Berkeley, methane emissions, and nanowaste generations from the ALD process are all quantita- 5100A Etcheverry Hall, tively studied. Energy flow analysis demonstrates that the ALD process energy consump- Berkeley, CA 94720-1740 tion is mainly determined by the ALD cycle time rather than the process temperature. Scale-up performance of the ALD technology is also studied for both emission genera- tions and energy consumptions. Strategies and methods for improving the sustainability performance of the ALD technology are suggested based on the analysis. ͓DOI: 10.1115/1.4001686͔ Keywords: atomic layer deposition, sustainable manufacturing, material flow analysis, energy flow analysis, Al2O3 dielectric film 1 Introduction as the oxidant. Deposition mechanism of Al2O3 by ALD is based ͑ ͒ ͑ ͒ on the chemical vapor deposition CVD reaction: 2Al CH3 3 As the miniaturization trend continues in the semiconductor → manufacturing industry, atomic layer deposition ͑ALD͒ has re- +3H2O Al2O3 +6CH4. -
Safety Data Sheet Material Name: HFCL4 SDS ID: 00227583P
Safety Data Sheet Material Name: HFCL4 SDS ID: 00227583P Section 1 - PRODUCT AND COMPANY IDENTIFICATION Material Name HFCL4 Synonyms HAFNIUM TETRACHLORIDE; HAFNIUM (IV) CHLORIDE; (T-4) HAFNIUM CHLORIDE (HfCl4); HAFNIUM CHLORIDE; Cl4Hf Chemical Family metal, halides Product Use semiconductor manufacture Restrictions on Use None known Details of the supplier of the safety data sheet Entegris, Inc. 129 Concord Road Building 2 Billerica, MA 01821 USA Telephone Number: +1-952-556-4181 Telephone Number: +1-800-394-4083 (toll free within North America) Emergency Telephone Number: CHEMTREC - U.S. - 1-800-424-9300 CHEMTREC - Intl. - 1-703-527-3887 E-mail: [email protected] Section 2 - HAZARDS IDENTIFICATION Classification in accordance with paragraph (d) of 29 CFR 1910.1200. Combustible Dust Skin Corrosion/Irritation - Category 1B Serious Eye Damage/Eye Irritation - Category 1 Specific target organ toxicity - Single exposure - Category 3 ( respiratory system ) GHS Label Elements Symbol(s) Signal Word Danger Hazard Statement(s) ____________________________________________________________ Page 1 of 9 Issue date: 2021-05-11 Revision 6.0 Print date: 2021-05-12 Safety Data Sheet Material Name: HFCL4 SDS ID: 00227583P May form combustible dust concentrations in air. Causes severe skin burns and eye damage. May cause respiratory irritation. Precautionary Statement(s) Prevention Do not breathe dust. Wear protective gloves/protective clothing/eye protection/face protection. Wash thoroughly after handling. Use only outdoors or in a well-ventilated area. Response Immediately call a POISON CENTER or doctor/physician. IF INHALED: Remove person to fresh air and keep comfortable for breathing. Specific treatment may be needed, see first aid section of Safety Data Sheet. -
Communications
COMMUNICATIONS dihydroxynaphthalene or 3,4-dihydroxybenzoate (extinction of blue qualify for Zintl phases when a broader definition is used. The l fluorescence at em 440 nm upon oxidation to the quinone). Nor- latter includes compounds of transition metals with filled or adrenaline reacts similarly to adrenaline down to pH 5. Adreno- empty d shells, that is the late transition metals of the Ni, Cu, chrome (2) is unstable and polymerizes to brown and finally insoluble [2] black products upon prolonged standing in solution. and Zn groups, and the early transition elements of the Ti, V, [14] a) M. Simmel, M. Turunen, J. Piironen, T. Vaara, VTT Symp. 1991, 122, and Cr groups at maximum formal oxidation states.[3] There 145 ± 161; b) R. J. Wodzinski, A. H. J. Ullah, Adv. Appl. Microbiol. are only two Zintl compounds containing a transition metal 1996, 42, 263 ± 302. with partially filled d shell, both based on manganese, [15] B.-L. Liu, A. Rafiq, Y.-M. Tzeng, A. Rob, Enzyme Microbiol. Technol. 1998, 22, 415 ± 424. (AE)14MnPn11 (AE alkaline-earth metal, Pn pnictogen) [4] [16] A. H. J. Ullah, D. M. Gibson, Prep. Biochem. 1987, 17, 63 ± 91. and Sr21Mn4Sb18 . Perhaps only they should be called true [17] Several kits for the titration of inorganic phosphate based on the ™transition metal Zintl phases∫ although the name is contra- reaction with ammonium molybdate are available commercially. dictory in itself. All but two of the d0 compounds contain Methyl-umbelliferyl phosphate and 4-nitrophenyl phosphate are isolated tetrahedra [MPn ]nÀ (M Nb, Ta, W, Ti).[5] The two general fluorogenic and chromogenic substrates for phosphatases 4 but do not enable phytases to be distinguished from other phospha- exceptions are Na5HfAs3 with dimers of edge-sharing tetra- 10À tases, in contrast to assays based on phytic acid. -
D. I. Bletskan "Phase Equilibrium in the Binary Systems a IV
Journal of Ovonic Research Vol. 1, No. 5, October 2005, p. 53 - 60 PHASE EQUILIBRIUM IN THE SYSTEMS AIV – BVI Part. II Systems Germanium-Chalcogen D. I. Bletskan* Uzhgorod University, Uzhgorod, Ukraine The phases in the system germanium – chalcogen are reviewed. The phase transitions are discussed. 1.4 System Ge-S The phase diagram T-x of the binary system Ge-S has been firstly built by A. V. Novoselova et al. [39] using the data of thermal and X-ray analysis. Thereafter, the regions of the phase diagrams of the system Ge-S in the neighborhood of GeS and GeS2 have been carefully determined in [40-44] and are represented in Fig. 1.4. In this system there were found two stable chemical compounds, whose stoichiometric compositions correspond to GeS and GeSe2. The temperature conditions of GeS and GeS2 synthesis, the melting character and melting temperature, given in the literature, are different. Thus, the melting temperature of GeS, after the data of various authors are 938 K [39, 42], 940 K [40], 931 K [41, 46]. Many research reports [39, 42-44] show that GeS compound melts congruently. Nevertheless, in the papers [40, 41, 46] is demonstrated that, during very slow heating, GeS melts incongruently, according to the peritectic reaction: GeS(solid) = Ge(solid) + Liq(53 at.% S) (1.4) In the system Ge-S, on the germanium side, there is a large domain (3÷45 at.% S) of layer separation in the liquid state (stratification) with one phase rich in germanium and a phase with the composition approaching GeS. -
Effect of the Titanium Isopropoxide:Acetylacetone Molar Ratio on the Photocatalytic Activity of Tio2 Thin Films
molecules Article Effect of the Titanium Isopropoxide:Acetylacetone Molar Ratio on the Photocatalytic Activity of TiO2 Thin Films Jekaterina Spiridonova 1,* , Atanas Katerski 1, Mati Danilson 2 , Marina Krichevskaya 3,* , Malle Krunks 1 and Ilona Oja Acik 1,* 1 Laboratory of Thin Films Chemical Technologies, Department of Materials and Environmental Technology, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia; [email protected] (A.K.); [email protected] (M.K.) 2 Laboratory of Optoelectronic Materials Physics, Department of Materials and Environmental Technology, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia; [email protected] 3 Laboratory of Environmental Technology, Department of Materials and Environmental Technology, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia * Correspondence: [email protected] (J.S.); [email protected] (M.K.); [email protected] (I.O.A.); Tel.: +372-620-3369 (I.O.A.) Academic Editors: Smagul Karazhanov, Ana Cremades and Cuong Ton-That Received: 31 October 2019; Accepted: 25 November 2019; Published: 27 November 2019 Abstract: TiO2 thin films with different titanium isopropoxide (TTIP):acetylacetone (AcacH) molar ratios in solution were prepared by the chemical spray pyrolysis method. The TTIP:AcacH molar ratio in spray solution varied from 1:3 to 1:20. TiO2 films were deposited onto the glass substrates at 350 ◦C and heat-treated at 500 ◦C. The morphology, structure, surface chemical composition, and photocatalytic activity of the obtained TiO2 films were investigated. TiO2 films showed a transparency of ca 80% in the visible spectral region and a band gap of ca 3.4 eV irrespective of the TTIP:AcacH molar ratio in the spray solution.