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Characterization of Silicon Phosphorus Alloy for Device Applications Larry C University of Arkansas, Fayetteville ScholarWorks@UARK Theses and Dissertations 5-2015 Characterization of Silicon Phosphorus Alloy for Device Applications Larry C. Cousar University of Arkansas, Fayetteville Follow this and additional works at: http://scholarworks.uark.edu/etd Part of the Electromagnetics and Photonics Commons, Electronic Devices and Semiconductor Manufacturing Commons, and the Structural Materials Commons Recommended Citation Cousar, Larry C., "Characterization of Silicon Phosphorus Alloy for Device Applications" (2015). Theses and Dissertations. 1138. http://scholarworks.uark.edu/etd/1138 This Thesis is brought to you for free and open access by ScholarWorks@UARK. It has been accepted for inclusion in Theses and Dissertations by an authorized administrator of ScholarWorks@UARK. For more information, please contact [email protected], [email protected]. Characterization of Silicon Phosphorus Alloy for Device Applications Characterization of Silicon Phosphorus Alloy for Device Applications A thesis submitted in partial fulfillment of the requirements for the degree of Master of Science in Microelectronics-Photonics by Larry Cousar University of Arkansas Bachelor of Science in Electrical Engineering, 2013 May 2015 University of Arkansas This thesis is approved for recommendation to the Graduate Council. Dr. Hameed A. Naseem Thesis Director Dr. Shui -Qing (Fisher) Yu Committee Member Dr. Gregory Salamo Dr. Rick Wise Committee Member Ex-Officio Member The following signatories attest that all software used in this thesis was legally licensed for use by Larry Cousar for research purposes and publication. __________________________________ __________________________________ Mr. Larry Cousar Dr. Hameed A. Naseem, Thesis Director This thesis was submitted to http://www.turnitin.com for plagiarism review by the TurnItIn company’s software. The signatories have examined the report on this thesis that was returned by TurnItIn and attest that, in their opinion, the items highlighted by the software are incidental to common usage and are not plagiarized material. __________________________________ __________________________________ Dr. Rick Wise, Program Director Dr. Hameed A. Naseem, Thesis Director Abstract A new material of highly-phosphorus doped silicon for device applications was characterized and analyzed for new material properties. Devices such as NMOS transistors and other CMOS compatible devices may benefit from new materials that reduce external resistances and increase drive currents. Material characterization requires numerous techniques and technologies to determine electrical, optical, and physical characteristics. For this work, Hall measurement, X-ray Diffraction, Raman Spectroscopy, Photoluminescence Characterization, and Spectroscopic Ellipsometry were used to better understand this new material. The results may lead to new models for silicon phosphorus alloys. Acknowledgments The first and foremost acknowledgment goes to God. His personal presence in my life sustains me as I experience daily His goodness, mercy and grace. The enduring love, encouragement, and instruction I have received from Dr. Naseem as I sought to complete this thesis work made my success more rewarding and beneficial, not just in the technical merits, but also in the greater impact of philosophies for the benefit of future generations. The excellent technical leadership I received from my co-advisor, Dr. Shui-Qing “Fisher” Yu, who made possible this thesis work on silicon phosphorus alloy and ensured my success to completion. Dr. Yu’s drive and attention to detail were greater than any experience I have received from industry and set the bar high for even greater results. Many others have assisted in many different ways. The great example and endless hours of discussion with Mr. Aboozar “Salman” Mosleh, made possible my understanding of complex topics such as reciprocal space maps for X-ray diffraction and even greater experiences such as Yalda and Nowrooz. The wisdom and encouragement I received and the many great stories and laughter I shared with Dr. Murtadha Alher made enjoyable all the difficult work we accomplished. The great friendships I developed while learning and working in the lab led to an overflowing of knowledge and wisdom. Dr. Husam Abu-Safe provided much guidance even before this work and continues still. Dr. Wei Du pointed me in all the right directions as I began my thesis topic and was helpful in overcoming various technical obstacles. Mr. Sayed Amir Ghetmiri’s leadership and example, as well as his technical instruction and his extreme honorable respect for people, caused me to achieve even more. Mr. Yiyin Zhou gave countless time for training on Hall measurement, class tutoring, and thesis preparation. Mr. Omar Alzoubi made possible many learning experiences with computer modeling software and great discussions on electromagnetics. Mr. Khaled Al-Shurman provided superb instruction on IC technology and was always encouraging to achieve more than I thought I could achieve. Ms. Huong Tran gave much effort to ensure the reliability of the Hall measurement system and was helpful with the learning of spectroscopic ellipsometry. Some research was made possible through the use of the High-Density Electronics Center at the University of Arkansas, Fayetteville campus, and all the staff made every effort to ensure great experiences in the lab. Dr. Vasyl Kunets was instrumental in recognizing many obstacles that came with Hall measurements. His training and regular discussions increased confidence in the Hall measurement results. And finally, all the other students not listed that in some way added to the great experience of this work. A special group of people who had little knowledge of my thesis yet impacted the outcome greatly must be mentioned. Dr. Michael Hendren was at one time the only one outside of academics that pointed me in the direction of such great academic success. Dr. Susan Shackelford provided an education greater than even this thesis work. Dr. Angela Chapman brought the greatest of inspirations. My son Josh, from whom I cannot express the incredible encouragement I received that went far beyond that of a son, lit a parallel path of progress and achievement while consistently encouraging my success. Dedication This work is dedicated to all my family; my mother, who’s love, care, and concern never ceases; my siblings who help me find my way; and my two sons, Josh and Kory. These two men I am the proudest. Table of Contents 1. Introduction ............................................................................................................................. 1 Area of Research ............................................................................................................. 1 Research Goals................................................................................................................ 6 2. Literature Review.................................................................................................................... 7 3. Experimental Design ............................................................................................................. 11 Experimental Design Introduction ................................................................................ 11 Hall Measurement Characterization ............................................................................. 13 X-ray Diffraction Characterization ............................................................................... 19 Electrochemical Capacitance-Voltage Profiling ........................................................... 22 Raman Spectroscopy Characterization ......................................................................... 26 Photoluminescence Characterization ............................................................................ 29 Spectroscopic Ellipsometry Characterization ............................................................... 29 Device Simulation ......................................................................................................... 33 Device Fabrication ........................................................................................................ 38 Device Characterization ................................................................................................ 39 4. Results and Discussion ......................................................................................................... 40 Hall Measurement Results ............................................................................................ 40 X-Ray Diffraction Results ............................................................................................ 47 Electrochemical Capacitive-Voltage Profiling Results ................................................ 54 Raman Spectroscopy Results ........................................................................................ 55 Photoluminescence Characterization Results ............................................................... 56 Spectroscopic Ellipsometry Results .............................................................................. 60 Device Simulation Results ............................................................................................ 65 Device Fabrication and Characterization Results ......................................................... 68 Crystal Structure ..........................................................................................................
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