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(12) Patent Application Publication (10) Pub. No.: US 2012/0256122 A1 Sato Et Al

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(12) Patent Application Publication (10) Pub. No.: US 2012/0256122 A1 Sato Et Al US 201202,561.22A1 (19) United States (12) Patent Application Publication (10) Pub. No.: US 2012/0256122 A1 Sato et al. (43) Pub. Date: Oct. 11, 2012 (54) COMPOSITION FOR ETCHING OF (30) Foreign Application Priority Data RUTHENIUM-BASED METAL, AND PROCESS FOR PREPARATION OF THE SAME Dec. 17, 2009 (JP) ................................. 2009-286552 Publication Classification (75) Inventors: Ellist Iyo (JP): Yasuo (51) Int. Cl. aito, Tokyo (JP) C09K I3/00 (2006.01) C09K I3/02 (2006.01) (73) Assignee: SHOWA DENKO K. K., C09K I3/04 (2006.01) Minato-ku, Tokyo (JP) (52) U.S. Cl. ....................... 252/79.2: 252/79.1; 252/79.5 (57) ABSTRACT (21) Appl. No.: 13/516,263 A composition for etching of a ruthenium-based metal, in which there are added and mixed at least a bromine-contain (22) PCT Filed: Dec. 15, 2010 ing compound, an oxidizing agent, a basic compound and water, wherein the amount of bromine-containing compound (86). PCT No.: PCT/UP2010/072552 added is 2-25 mass %, as bromine, and the amount of oxidiz ing agent added is 0.1-12 mass %, with respect to the total S371 (c)(1), mass, and the pH is at least 10 and less than 12. It is possible (2), (4) Date: Jun. 15, 2012 to accomplish efficient etching of ruthenium-based metals. Patent Application Publication Oct. 11, 2012 US 2012/O2S6122 A1 200 150 1 O O 5 O 9 10 11 12 13 14 Ru:RUTHENIUM FILM, RuTa:RUTHENIUM-TANIALUM ALLOY FILM US 2012/O2561 22 A1 Oct. 11, 2012 COMPOSITION FORETCHING OF hydroxide or the like at 30 mass % or greater, but they are RUTHENIUM-BASED METAL, AND PROCESS difficult to use in combination with existing etching compo FOR PREPARATION OF THE SAME sitions for ruthenium because of precipitate formation, for example. TECHNICAL FIELD 0008. A method of etching ruthenium using sodium hypochlorite has also been disclosed (Patent document 4). 0001. The present invention relates to a composition for When this method is applied for semiconductor devices, how etching of a ruthenium-based metal, and to a process for ever, it introduces the problem of sodium ions as a contami preparation of the same. In particular, the invention relates to nation source, while the usable life of the solution is also a composition Suitable for use in etching of ruthenium metal inadequate. and ruthenium alloys composed mainly of ruthenium, as well 0009 Patent Document 5 discloses an etching composi as a process for its preparation. tion using hydrobromic acid and an oxidizing agent (hydro gen peroxide or nitric acid). However, this etching composi BACKGROUND ART tion is used for indium phosphide semiconductors, and is not 0002. In recent years, the use of ruthenium is being inves disclosed as being effective for etching of ruthenium-based tigated as a barrier metal for semiconductor devices. This is metals. Moreover, the etching composition is acidic and not because ruthenium exhibits a barrier property, and also basic. because when copper is used as the wiring metal, it exhibits 0010. Otheretching methods for ruthenium that have been satisfactory adhesiveness and maintains its conductivity even disclosed include an etching method for ruthenium films in when oxidized. Ruthenium is also being noted as a capacitor which a ruthenium film formed on a substrate is etched with electrode material for DRAM (Dynamic Random Access a chemical solution having a pH of 12 or greater and an Memory), and as a material for stabilization of the magneti oxidation-reduction potential of 300 mV vs. SHE or greater Zation direction in magnetic elements. (Patent document 6), and a composition for etching of ruthe 0003. When ruthenium is formed as a film by sputtering, nium comprising carboxylic acid and/or ammonia, hydrogen CVD or the like on a substrate such as a silicon wafer, the peroxide and water, the aqueous solution being acidic (with ruthenium also adheres onto the back side and edges of the optional addition of acids including hydrobromic acid) substrate. If the ruthenium thin-film remaining on the back (Patent document 7). However, these are intended for simple side and edges is left to remain, it may peel and become ruthenium metal, and are not described as being applicable attached to the structural sections of the device at the substrate for ruthenium alloy films. Surface, or it may contaminate other Substrates via the semi conductor device manufacturing apparatus, resulting in PRIOR ART REFERENCE reduced product reliability or yields. For this reason, the back Patent Document sides and edges of Substrates must be cleaned either physi cally or chemically to remove the ruthenium. 0011 Patent document 1: Japanese Unexamined Patent 0004. The method of cleaning of a substrate having ruthe Publication No. 2001-237389 nium accumulated on its back side or edges may be cleaning 0012 Patent document 2: Japanese Unexamined Patent using an etching composition. However, ruthenium is a plati Publication No. 2006-148149 num-group element which is not easy to etch. 0013 Patent document 3: Japanese Patent Public Inspec 0005. At the current time, the known etching compositions tion No. 2008-541428 for ruthenium that are used in semiconductor device manu 0014 Patent document 4: Japanese Unexamined Patent facturing steps include cerium salts and nitric acid (Patent Publication No. 2001-240985 document 1). However, cerium salts produce precipitates dur 00.15 Patent document 5: Japanese Unexamined Patent ing etching, and the precipitates generated at the bottom of Publication No. 2004-361434 treatment tanks during manufacturing steps must be removed. 0016 Patent document 6: Japanese Unexamined Patent In addition, the cerium salt-derived components remaining on Publication No. 2002-161381 the substrate surface after etching must be removed before its 0017 Patent document 7: Japanese Unexamined Patent use in a semiconductor device, which is incompatible with Publication No. 2008-42014 contamination by metal ions. However, cerium salt-derived components are difficult to remove with purified water or DISCLOSURE OF THE INVENTION ordinary acids, and they require re-cleaning with chemical Problems to be Solved by the Invention agents such as hydrofluoric acid. 0018. The present invention has been accomplished with 0006. There have also been developed etching composi the aim of Solving the aforementioned problems, and its tions using periodic acid or periodic acid salts (Patent docu object is to provide an etching composition that allows effi ment 2). However, because of the high cost of periodic acid cient etching of films of ruthenium and ruthenium alloys and periodic acid salts, they are not suitable for use in large composed mainly of ruthenium and including at least one scale manufacturing steps. other metal Such as tantalum in a prescribed proportion (for 0007 Tantalum is often also used as a barrier metal, for the the purpose of the invention, these will also be referred to purpose of improving the adhesion and barrier property of collectively as “ruthenium-based metals'), as well as a pro ruthenium on silicon substrate surfaces (Patent document 3). However, Such etching compositions are also impractical cess for preparation of the same. because of the low etching rates for ruthenium alloy films containing tantalum. Tantalum is known to dissolve in acidic Means for Solving the Problems aqueous solutions containing hydrofluoric acid and in con 0019. As a result of diligent research on compositions for centrated, strongly basic aqueous solutions of potassium etching offilms of ruthenium or ruthenium alloys composed US 2012/O2561 22 A1 Oct. 11, 2012 mainly of ruthenium, the present inventors have completed nitric acid as the oxidizing agent, and preparing a mixed this invention upon finding that a basic composition compris aqueous Solution to which at least the hydrogen bromide and ing a bromine-containing compound, an oxidizing agent, a oxidizing agent have been added, and a step of adding a basic basic compound and water added in prescribed amounts compound to the mixed aqueous Solution, so that the hydro allows selective etching of ruthenium or ruthenium alloy gen bromide concentration is 2-25 mass % as bromine and the films without damaging silicon-based substrates and thin oxidizing agent concentration is 0.1-12 mass %, and so that films of Si, SiNa, SiO, or the like. Specifically, the invention pH is a prescribed value. relates to a composition for etching of a ruthenium-based 0034 (14 A method of treating a substrate, by etching of metal which is a composition comprising prescribed amounts a ruthenium-based metal film and/or ruthenium alloy film of a bromine-containing compound, an oxidizing agent, a accumulated on a Substrate, using a composition for etching basic compound and water, and which is basic, as well as a prepared by the process for preparation according to 13. process for preparation of the same. 0020. The invention comprises the following aspects, for Effect of the Invention example. 0021 1A composition for etching of a ruthenium-based 0035. The composition for etching of the invention allows metal, in which there are added and mixed at least abromine selective etching of a ruthenium film and/or ruthenium alloy containing compound, an oxidizing agent, a basic compound film against a Substrate material Such as a semiconductor and water, wherein the amount of bromine-containing com wafer, and it is therefore effective for cleaning of the back side pound added is 2-25 mass %, as bromine, and the amount of and edges of a Substrate Such as a semiconductor wafer oxidizing agent added is 0.1-12 mass
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