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The 6th International Symposium on Graphene Devices (ISGD-6), the principal meeting addressing advanced graphene applications, is offering a unique forum to review the present status, the latest developments, future prospects and related fundamental studies, covering both state-of-the-art experimental and theoretical discoveries. ISGD-6 will be held at Conference center of ITMO University, St. Petersburg, Russia on 18-21 July, 2018. Saint Petersburg is the second largest city in Russia, and is considered by many to be Russia's most culturally and architecturally Western city. Once the capital of Russia, Saint Petersburg is home to a great number of world famous museums and historical sites, including the Hermitage Museum, Saint Isaac's Cathedral and the Grand Cascade at Peterhof. The venue continues a biennial series of symposiums initiated in Aizu, Japan (2008) and went through Sendai, Japan (2010), Saint Aubin, France (2012), Seattle, USA (2014), and most recently in Brisbane, Australia (2016).
Symposium organization
• International Steering Committee Chair, Francesca Iacopi, University of Technology Sydney, Australia John Boeckl, AFRL, USA Patrick Soukiassian, CEA-Saclay, France Walter De Heer, Georgia Institute of Technology, USA Stephan Roche, ICREA and Catalan Institute of Nanoscience and Nanotechnology, Spain Alexander Vul', Ioffe Institute, Russia
• International Advisory Committee Chair, Michael Fuhrer, Monash University, Australia Joshua Robinson, Pennsylvania State University, USA Antonio Tejeda, CNRS-Orsay, France Philippe Dollfus, CNRS Institut d’Electronique Fondamentale, France Kurt Gaskill, Naval Research Laboratory, USA Toshio Ogino, Yokohama National University, Japan Alexander Lebedev, Ioffe Institute and ITMO University, Russia Petra Rudolf, University of Groningen, The Netherlands Ulrich Starke, Max-Planck Institute, Stuttgart, Germany Rositsa Yakimova, Linköping University, Sweden
• Local Committee Chair, Alexander Lebedev, Ioffe Institute and ITMO University, Russia Co-Chair (Program), Rositsa Yakimova, Linköping University, Sweden Co-Chair (Organizing), Alexander Atrashchenko, ITMO University, Russia Alexander Vul', Ioffe Institute, Russia Maria Datsuk, ITMO University, Russia Yuri Makarov, Nitride Crystals Inc., USA Elena Matveeva, ITMO University, Russia
1 Yana Platunova, ITMO University, Russia Alexei Romanov, ITMO University, Russia Inna Sosnova, Interjournalist Center, Russia Sergey Tarasenko, Ioffe Institute, Russia
Sponsors and organizers
Invited Presentations
Leonid E. Golub Ioffe Institute, St. Petersburg, Russia “Ratchet effects in graphene with a lateral superlattice”
Sergey Kubatkin Chalmers University, Sweden “Charge neutral epitaxial graphene on SiC: how to get it and what it is useful for”
Francesca Iacopi University of Technology Sydney, Australia “Electrical characteristics of graphene grown on silicon wafers”
Wataru Norimatsu Nagoya University, Japan “Interface engineering of epitaxial graphene on SiC”
Guy Le Lay Université de la Méditerranée, Marseille, France “Silicene: Graphenelike Silicon from Creation to Field Effect Transistor”
Elena Obraztsova Prokhorov General Physics Institute, Moscow, Russia “Graphene for Laser Applications”
Filippo Giannazzo CNR-IMM, Catania, Italy “Towards high frequency devices based on graphene integration with Nitride semiconductors”
Victor Aristov DESY, Hamburg, Germany; ISSP RAS, Chernogolovka, Russia “Electronic structure and transport properties of graphene on SiC/Si(001)”
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Steven Fairchild Air Force Research Laboratory, USA “Alkali intercalation in graphene for cold atom sources in atomic clocks and inertial navigation systems”
Ruth Pachter Air Force Research Laboratory, USA “Optical and electronic signatures of two-dimensional transition metal dichalcogenides upon phase transition and introduction of defects”
Rositsa Yakimova Linköping University, Sweden “Insights into detection of toxic metals by Graphene: theory and experiment”
Topics
• Graphene Electronics, Spintronics, Sensors, Terahertz Devices, Photonics and Energy Applications • Graphene Nanochemistry and Functionalization, bioapplications • Graphene Growth: Epitaxial, CVD, Mechanical and Chemical Exfoliation, and Substrate Transfer • Electronic, Structural, Optical, Mechanical and Transport Properties of Graphene • 2D Materials • Theoretical Investigation and Modelling of Graphene and 2D Materials devices
Language
The official language of the symposium is English.
3 Program time plan
18 July Wednesday
11:00 – 12:40 Registration 12:40 - 13:40 Opening ( Chair Prof. R.Yakimova) 12:40 Welcome speech of the conference (Vice Rector for Research of ITMO University.Prof V.O. Nikiforov) 12:50 International Research Center of Functional Materials and Devices of Optoelectronics and UniFEL Center at ITMO University (Prof A. E. Romanov) 13:10 100 years of Ioffe Institute ( Prof. S.V.Lebedev, Temporarily Fulfilling Obligations Director Ioffe Institute ) 13:30 ISGD-6 in St.Petersburg ( Prof. A.A.Lebedev )
13:40 -14:40 LUNCH 14:40 – 16:20 Section 1 “Theory” (Chair Prof. W.Norimatsu)
14:40 INVITED Ratchet effects in graphene with a lateral superlattic Leonid Golub Ioffe Institute, St. Petersburg, Russia 15:20 Disclination approach to modelling graphene with defects Anna L. Kolesnikova, Mikhail A. Rozhkov,Tatiana S. Orlova, Irina Hussainova, Igor S. Yasnikov, Leonid V. Zhigilei, and Alexey E. Romanov ITMO University, St. Petersburg, Russia Institute of Problems of Mechanical Engineering RAS, St. Petersburg, Russia Ioffe Institute RAS, St. Petersburg, Russia Tallinn University of Technology, Tallinn, Estonia Togliatti State University,Togliatti, Russia University of Virginia, Charlottesville VA, USA 15:40 Graphene in the Approximation of Interacting Electrons M.V.Krasinkova Ioffe Institute, St.Petersburg, Russia 16:00 On corrected formula for irradiated graphene quantum conductivity Natalie E. Firsova A.F.Ioffe Physical-Technical Institute, the Russian Academy of Sciences, Peter the Great Saint Petersburg Polytechnic University
16:20 – 16:40 Coffee-break 16:40 – 18:00 Section 2 “Graphene Growth I” (Chair Prof. L.Golub )
16:40 INVITED Interface engineering of epitaxial graphene on SiC Wataru Norimatsu Department of Materials Science and Engineering, Nagoya University, Japan 17:20 Easily scalable method for the synthesis of large volumes GNP from cyclic hydrocarbons Aleksei Vozniakovskii , Aleksandr Vozniakovskii, Sergey Kidalov
4 Lab.physics for Cluster Structures, Ioffe Institute Sector for polymer nanostructured materials, FGUP “NIISK” 17:40 Formation of bulk ripples in multilayer graphene during sonication assisted liquid phase exfoliation. Andrei Alaferdov , Yakov Kopelevich, Robson Silva,Raluca Savu, Natalia Rozhkova, Dmitry Pavlov, Stanislav Moshkalev CCSNano, University of Campinas DFA/IFGW, University of Campinas Institute of Geology/ KRC RAS Dept. Physics, University of Nizhni Novgorod
18:00 – 20:00 Welcome party
19 July Thursday
10:00 – 11:40 Section 3 “Graphene Growth II” (Chair Prof. A.Romanov )
10:00 INVITED Electronic structure, transport and magnetic properties of graphene on SiC(001). Victor Aristov , Alexander Chaika, Olga Molodtsova, Han-Chun Wu DESY, D- Hamburg, Germany ISSP RAS, Chernogolovka, Russia CRANN and School of Physics, Trinity College, Dublin, Ireland ITMO University, SaintPetersburg, Russia School of Physics, BIT, Beijing, People’s Republic of China 10:40 Graphene augmented ceramic nanofibers and their applications Roman Ivanov , Masoud Taled, Maria Drozdova and Irina Hussainova, Department of Mechanical and Industrial Engineering ITMO University 11:00 Comparison of technological parameters for graphene growth on 6H-SiC and 4H-SiC by thermal decomposition in argon Dmitry G. Amel’chuk , Sergey P. Lebedev, Valery Yu. Davydov, Alexander N. Smirnov, Ilya A. Eliseyev, Ekaterina V. Gushchina, Mikhail S. Dunaevsckiy, Alexander A. Lebedev, Ioffe Institute, Politekhnicheskaya, St.Petersburg, Russia Saint Petersburg State University, St.Petersburg, Russia ITMO University, Kronverkskiy prospekt, St.Petersburg, Russia 11:20 Towards semiconducting graphene devices: nanopatterning vs graphene hybrid heterostructures on SiC Nunzio Motta , Mojtaba Amjadipour, Jonathan Bradford, Jennifer Macleod, Josh Lipton-Duffin, Francesca Iacopi CPME School and IFE, Queensland University of Technology, George st, Brisbane, QLD, Australia Faculty of Engineering and Information Technology, University of Technology Sydney, NSW Australia.
11:40 – 12:00 Coffee-break
5 12:00 – 13:40 Section 4 “Graphene Characterization” (Chair Prof.V.Aristov )
12:00 INVITED Electrical characteristics of graphene grown on silicon Francesca Iacopi School of Electrical and Data Engineering, Faculty of Engineering and IT, and Centre for Clean Energy Technology, University of Technology Sydney
12:40 Investigation of the Transport properties of Graphene films grown on 4H-SiC Alexander A. Lebedev , Valerii Yu. Davydov, Sergei P. Lebedev, Alexander N. Smirnov, Nina V. Agrinskaya, and Mikhail A. Shakhov Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia ITMO University, Kronverkskii av. 49, St. Petersburg, 197101 Russia 13:00 Influence of graphene surface treatment on Raman spectra shift Alexander Usikov , Mihail Puzyk, Ilya Eliseyev, Sergey Novikov,Sergey Lebedev, Iosif Barash, Alexander Roenkov, Andrew Goryachkin, Alexander Lebedev, Yuri Makarov Nitride Crystals Inc., Richmond, VA, USA University ITMO, St. Petersburg, Russia Herzen University, St.Petersburg, Russia Ioffe Institute, St. Petersburg, Russia Aalto University, Espoo, Finland Nitride Crystals Group Ltd., St. Petersburg, Russia 13:20 Modification of the optical and electrical properties of CVD graphene Rybin Maxim , Shinckaruck Vyacheslav, Obraztsova Ekaterina, Obraztsova Elena Prokhorov General Physics Institute, Moscow, Russia
13:40 -14:40 LUNCH 14:40 – 16:20 Section 5 “Graphene Technology” (Chair Prof. J.Boeckl)
14:40 INVITED Insights into detection of toxic metals by Graphene: theory and experiment Rositsa Yakimova , Ivan Shtepliuk, Maria Francesca Santangelo, Mikhail Vagin, Tihomir Iakimov and Jens Eriksson Department of Physics, Chemistry and Biology, Linköping University, SE-58183, Linköping, Sweden 15:20 Electrolysis of graphene–on-SiC films Mikhail Puzyk , Alexander Usikov, Sergey Novikov, Iosif Barash, Alexander Roenkov, Andrew Goryachkin, Yuri Makarov Herzen University, St.Petersburg, Russia University ITMO, St. Petersburg, Russia Nitride Crystals Inc., Richmond, VA, USA Aalto University, Espoo, Finland Nitride Crystals Group Ltd., St. Petersburg, Russia 15:40 Direct transfer of wafer-scale graphene films Maria Kim , Ali Shah, Changfeng Li, Petri Mustonen, Jannatul Susoma, Farshid Manoocheri, Harri Lipsanen, and Juha Riikonen
6 Department of Electronics and Nanoengineering, Aalto University, Tietotie, Espoo, Finland Metrology Research Institute, Aalto University, P.O. Box, FI- Aalto, Finland 16:00 Dynamics of changes in the resistance of a graphene film contaminated by an organic matter during thermal cycling in vacuum G.Lukyanov , A. Lebedev, M. Karpova, V. Kuzmin ITMO University, St. Petersburg, Russia
16:20 – 16:40 Coffee-break 16:40 – 18:20 Poster Section
20 July Friday
10:00 – 11:40 Section 6 “Graphene Devices I” (Chair Prof. F.Iacopi )
10:00 INVITED Graphene Coatings for Alkali Resistance Steven Fairchild , John Boeckl, Tyson Back, Gregory Kozlowski, Aaron Fletcher Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright- Patterson Air Force Base, OH 45433 USA Department of Physics, Wright State University, 3640 Colonel Glenn Hwy., Dayton, OH 45435 USA 10:40 INVITED Graphene for laser applications Obraztsova E. D , Rybin M. G., Bykov A.Y., Murzina T.V., Obraztsov P. A., Sorochenko V. R., V.A. Shotniev, A.V. Tausenev A.M. Prokhorov General Physics Institute, RAS; [email protected] Moscow Institute of Physics and Technology, Dolgoprudny, Russia; M.V. Lomonosov Moscow State University, Physics Department, Moscow, Russia; Avesta Ltd., Troitsk, Moscow region, Russia 11:20 Terahertz photoresponse in graphene p-n junctions Yuri Vasilyev, Galina Vasileva, Sergey Novikov, Sergey Tarasenko, Sergey Danilov and Sergey Ganichev Ioffe Institute, St. Petersburg, Russia Micro and Nanoscience Laboratory, Aalto University, Espoo, Finland Institut für Angewandte Physik, Universität Regensburg, Germany
11:40 – 12:00 Coffee-break 12:00 – 14:00 Section 7 “2D Materials” (Chair Prof. S.Kubatkin)
12:00 INVITED Atomic-Level Characterization of 2D Nanostructures by Theoretical Analysis F. Mehmood, J. Boeckl, R. Pachter Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio, USA. 12:40 INVITED Silicene: graphenelike silicon from creation to field effect transistors Guy Le Lay PIIM-CNRS Aix-Marseille University 13:20 Tunnel Field-Effect Transistors based on WTe2-MoS2 in-plane heterojunction
7 Jean Choukroun , Marco Pala, Shiang Fang, Efthimios Kaxiras, and Philippe Dollfus Centre for Nanoscience and Nanotechnology, CNRS, Univ. Paris-Sud, Université Paris- Saclay, Orsay, France Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 13:40 Growth of graphene-like materials through on-surface reactions Maryam Abyazisani , Jonathan Bradford, Nunzio Motta, Josh Lipton-Duffin, and Jennifer MacLeod, School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology (QUT), Brisbane, Australia Institute for Future Environments, Queensland University of Technology (QUT), Brisbane, Australia
14:00 -15: 00 LUNCH 15:00 – 16:00 Industrial Section 5 Presentation of Graphene related company (Chair Prof. A.A.Lebedev)
15:00 A.S. Usikov “EpiGraf” 15:15 R. Yakimova “Graphensic” 15:30 M. Rubin “RusGraphene” 15:45 I. Kalitukho “Solarls”
16:30 – 18:00 Excursion along rivers and canals & drinks and snacks
21 July Saturday
10:00 – 11:40 Section 8 “Graphene Devices II” (Chair Prof. Guy Le Lay)
10:00 INVITED Towards high frequency devices based on graphene integration with Nitride semiconductors F. Giannazzo , G. Greco, E. Schilirò, R. Lo Nigro, I. Deretzis, A. La Magna, G. Nicotra, C. Spinella, F. Roccaforte, F. Iucolano, S. Ravesi, M. Leszczy ński, A. Michon, Y. Cordier, and R. Yakimova, CNR-IMM, Strada VIII, 5, ZonaIndustriale, 95121 Catania, Italy STMicroelectronics, StradalePrimosole 50, 95121 Catania, Italy TopGaN, PrymasaTysiÄclecia 98 01-424 Warsaw, Poland CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne, France IFM, Linköping University, Linköping, Sweden 10:40 INVITED Charge neutral epitaxial graphene on SiC: how to get it and what it is useful for Hans He, Kyung Ho Kim, Andrey Danilov, Domenico Montemurro, Liyang Yu, Yung Woo Park, Floriana Lombardi, Thilo Bauch, Kasper Moth-Poulsen, Tihomir Yakimov, Rositsa Yakimova, Per Malmberg, Christian Müller, Samuel Lara-Avila,, Alexander Tzalenchuk, Serguei Cherendichenko, Sergey Kubatkin
8 Department of Microtechnology and Nanoscience, Chalmers University of Technology Department of Physics and Astronomy, Seoul National University Department of Chemistry and Chemical Engineering, Chalmers University of Technology Institute of Applied Physics, Seoul National University Department of Physics and Astronomy, University of Pennsylvania Department of Physics, Chemistry and Biology, Linkoping University National Physical Laboratory, London 11:20 The Influence of Graphene on the Fine Structure of Aluminum-Graphene Composite Materials Yolshina L.A., Muradymov R.V. Institute of High-Temperature Electrochemistry, Ural Branch of the Russian Academy of Sciences, Ekaterinburg, Russia 11:40 Extremely High Breakdown Current Density in Quasi-1D van der Waals Nanowires Implemented with Transition Metal Trichalcogenides A. Geremew, S. Rumyantsev , M. A. Bloodgood, T. T. Salguero and A. A. Balandin Department of Electrical and Computer Engineering, University of California, Riverside, CA 92521 USA Ioffe Physical-Technical Institute, St. Petersburg, 194021 Russia Department of Chemistry, University of Georgia, Athens, GA 30602 USA 12:00 State memory in solution gated graphene transistors Aleksey Butko , Vladimir Butko, Sergey Lebedev, Aleksander Lebedev, Aleksander Smirnov, Valery Davydov and Yurii Kumzerov Ioffe Institute, Polytechnicheskaya 26, 194021, St. Petersburg, Russia St. Petersburg Academic University, 194021 Khlopin St. 8/3, St. Petersburg, Russia Saint-Petersburg State University of Information Technologies, Mechanics and Optics (ITMO), Kronverksky 49, 197101, St. Petersburg, Russia
12:20 – 12:40 Coffee-break 12:40 – 13:20 Closing (Chair Prof. A. Lebedev and R. Yakimova)
12:40 Presentation of the next ISGD conference John Boeckl Air Force Research Laboratory, USA 13:00 Closing remarks
13:20 -14:20 LUNCH
9 POSTER SESSION
P1. Charged excitons in 2D and 3D materials I. Filikhin , R. Ya. Kezerashvili, Sh. M. Tsiklauri, B. Vlahovic North Carolina Central University, Durham, NC, USA New York City College of Technology, City University of New York, NY, USA Borough of Manhattan Community College, City University of New York, NY, USA P2. Graphene barristor based on β-Ga2O3 and other wide bandgap semiconductors. Mikhail Rozhkov, Andrei Smirnov, Evgeniy Kolodeznyi, Vladislav Bougrov and Alexey Romanov Department of Modern Functional Materials, ITMO University Department of Light Technologies and Optoelectronics, ITMO University Sector of Solid State Theory, Ioffe Institute RAS P3. MD simulation and DFT calculations for pseudo-graphene crystals Mikhail A. Rozhkov , Anna L. Kolesnikova, Igor S. Yasnikov and Alexey E. Romanov Department of Modern Functional Materials, ITMO University Laboratory for Nanomaterials Mechanics and Theory of Defects, Institute of Problems of Mechanical EngineeringRAS Institute of Mathematics, Physics and Information Technology, Togliatti State University Sector of Solid State Theory, Ioffe Institute RAS P4. Investigation of the graphene-on-silicon-carbide as a basis for biosensor applications Natalja Sleptsuk , Jana Toompuu, Alexander Lebedev, Valery Davydov, Evgenia Kalinina, Raul Land, Oleg Korolkov and Toomas Rang 1TJS Department of Electronics, Tallinn University of Technology, Tallinn, Estonia, 19086 2Ioffe Institute, Russian Academy of Science, 194021 St. Petersburg, Russia P5. Investigation of the stem cells cultivation on graphene Yuri Negulyaev, Sergey Novikov, Alexander Usikov, Sergey Lebedev, Iosif Barash, Alexander Roenkov, Alexander Lebedev, and Yuri Makarov Institute of Cytology, St. Petersburg, Russia Aalto University, Espoo, Finland Nitride Crystals Inc., Richmond, VA 23238, USA University ITMO, St. Petersburg, Russia Ioffe Institute, St. Petersburg, Russia Nitride Crystals Group Ltd., St. Petersburg, Russia P6. Investigation of response of graphene-on-SiC chips to estrogen receptors Sergey Novikov, Liu Zhaoliang, Lili Zhao, Alexander Usikov , Alexander Lebedev, Yuri Makarov Aalto University, Espoo, Finland Harbin Medical University, Harbin, China Harbin Institute of Technology, Harbin, China University ITMO, St. Petersburg, Russia Ioffe Institute, St. Petersburg, Russia Nitride Crystals Inc., Richmond, VA, USA
10 P7. Ice-water phase transition detection by single-layer graphene Vladimir Samuilov, Alexander Usikov , Yuri Makarov, Sergey Novikov Department of Materials Science and Engineering, Stony Brook University, NY Nitride Crystals Inc., Richmond, VA 23238, USA Aalto University, Espoo, Finland P8. Accessible method for obtaining a 2D carbon matrix for immobilizing biological objects Aleksandr Vozniakovskii , Aleksei Vozniakovskii, Sergey Kidalov, Irina Novikova, Nina Boikova Sector for polymer nanostructured materials, FGUP "NIISK" Lab.physics for Cluster Structures, Ioffe Institute FSBSI VIZR P9. Graphene on 4H-SiC: The structural, chemical, and electronic properties Sergey P. Lebedev ,, Valery Yu. Davydov, D.Yu. Usachov, Alexander N. Smirnov, Ilya A. Eliseyev, Ekaterina V. Gushchina, Mikhail S. Dunaevsckiy, K.A. Bokai, Jörg Pezoldt, Dmitry G. Amel’chuk, Alexander A. Lebedev Ioffe Institute, Politekhnicheskaya, St.Petersburg, Russia Saint Petersburg State University, St.Petersburg, Russia TechnischeUniversitätIlmenau, Max Plank Ring, Ilmenau, Germany P10. Estimation of the carrier concentration in the epitaxial graphene grown on 4H- and 6H-SiC using Raman spectroscopy. Ilya Eliseyev ,, Valery Davydov, Alexander Smirnov, Sergey Lebedev, Dmitry Usachov, Kirill Bokai, Jörg Pezoldt, Alexander Lebedev Ioffe Institute, Politekhnicheskaya, St.Petersburg, Russia Saint Petersburg State University, St.Petersburg, Russia Technische Universität Ilmenau, Max Planck Ring, Ilmenau, Germany
Symposium venue
ISGD-6 will be held at the Conference center of the oldest technical university of the city – ITMO University (9 Lomonosova str., St. Petersburg, 191002, Russia). The nearest Metro stations to the Conference center of ITMO University are Vladimirskaya (Red line) and Dostoyevskaya (Orange line) stations.
Welcome reception
The ISGD-6 welcome reception will take place on July 18, 2018, from 18.00 to 20.00, just outside the conference hall.
Coffee/Tea Breaks and Lunch
Coffee/Tea Breaks will take place just outside the conference hall. Lunches will take place in the ITMO University dining-hall in the same building where the symposium will be held. Please, find the schedule in the program guide.
11 Excursion along rivers and canals of Saint-Petersburg
The excursion along rivers and canals of Saint-Petersburg will take place on July 20, 2018 from 16.30 to 18.00. Pier of departure: 64, Fontanka river embankment. Pier of arrival of the motor ship: Mytninskaya embankment (right coast of the Kronverksky channel, below Kronverksky bridge). The conference participants for one and a half an hour will have an opportunity to admire the historical part of the city, monuments of architecture of the18-19th centuries - cathedrals, palaces, bridges and embankments of St.-Petersburg. Motor ships will moor to the place where the city has arisen – Zayachy Island where the well-known Peter and Paul Fortress is located. Today there is a working Peter and Paul cathedral, where burials of representatives of the imperial Romanov dynasty, the historical Mint, the Museum of money are located. But almost the whole territory is occupied by the with numerous exhibitions and expositions. On the motor ship conference participants will be offered light snacks, champagne, vine, tea and coffee.
Exhibition
ISGD-6 offers the exhibition opportunities to organizations and participants of the symposium. The exhibition will take place on July 18-19 in the big hall in front of the conference hall on the second floor.
Exhibition Timetable
Date Time Installation July 18th 9.30 - 11.00 Exhibition July 18th 11.00 - 20.00 Exhibition July 19th 9.30 - 20.00 Closing July 19th 20.00 - 21.00
Contacts
Email: [email protected] 9 Lomonosova str., St. Petersburg, 191002, Russia Phone: +7 812 457 18 59 ITMO University
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