XY`aYbc@`e@fgh@ipfhYpbfi`pbq@rscX`ritc@`p@aYbXghph@uhviwhr@@xirauy@ ! " #!$%& #!$%' #!$% " " ) 0%)$1!22 ) 0% ) 0% "( 34#52 34#522 "( " " 675! !$% " " "( "( 89@@AA*CDAEF 89@@AA*CDAEF " " #!$%( #!$%G " " ) 0% 3P ! 5 89@@AA*CDAEF "( H #!I !$% "( Q0%%7 H $5%7 &" &" &" &" R%# &"( &"( R%# R%# (" (" R%# (" (" ("( ("( #!$% #!$%S S" S" $ ) 0%!#%$ $7 2%5! S" #!$% S" S"( S"( '" '"T '" '" 89@@AA*CDAEF 89@@AA*CDAEF '"& '"( " '"( #!$% U$5!5#!$% G" G" ) 0% VW#5$% $%7 G" )$1!2 45 %# % 5 G" G"( G"( " " #$0 ! " General information The 6th International Symposium on Graphene Devices (ISGD-6), the principal meeting addressing advanced graphene applications, is offering a unique forum to review the present status, the latest developments, future prospects and related fundamental studies, covering both state-of-the-art experimental and theoretical discoveries. ISGD-6 will be held at Conference center of ITMO University, St. Petersburg, Russia on 18-21 July, 2018. Saint Petersburg is the second largest city in Russia, and is considered by many to be Russia's most culturally and architecturally Western city. Once the capital of Russia, Saint Petersburg is home to a great number of world famous museums and historical sites, including the Hermitage Museum, Saint Isaac's Cathedral and the Grand Cascade at Peterhof. The venue continues a biennial series of symposiums initiated in Aizu, Japan (2008) and went through Sendai, Japan (2010), Saint Aubin, France (2012), Seattle, USA (2014), and most recently in Brisbane, Australia (2016). Symposium organization • International Steering Committee Chair, Francesca Iacopi, University of Technology Sydney, Australia John Boeckl, AFRL, USA Patrick Soukiassian, CEA-Saclay, France Walter De Heer, Georgia Institute of Technology, USA Stephan Roche, ICREA and Catalan Institute of Nanoscience and Nanotechnology, Spain Alexander Vul', Ioffe Institute, Russia • International Advisory Committee Chair, Michael Fuhrer, Monash University, Australia Joshua Robinson, Pennsylvania State University, USA Antonio Tejeda, CNRS-Orsay, France Philippe Dollfus, CNRS Institut d’Electronique Fondamentale, France Kurt Gaskill, Naval Research Laboratory, USA Toshio Ogino, Yokohama National University, Japan Alexander Lebedev, Ioffe Institute and ITMO University, Russia Petra Rudolf, University of Groningen, The Netherlands Ulrich Starke, Max-Planck Institute, Stuttgart, Germany Rositsa Yakimova, Linköping University, Sweden • Local Committee Chair, Alexander Lebedev, Ioffe Institute and ITMO University, Russia Co-Chair (Program), Rositsa Yakimova, Linköping University, Sweden Co-Chair (Organizing), Alexander Atrashchenko, ITMO University, Russia Alexander Vul', Ioffe Institute, Russia Maria Datsuk, ITMO University, Russia Yuri Makarov, Nitride Crystals Inc., USA Elena Matveeva, ITMO University, Russia 1 Yana Platunova, ITMO University, Russia Alexei Romanov, ITMO University, Russia Inna Sosnova, Interjournalist Center, Russia Sergey Tarasenko, Ioffe Institute, Russia Sponsors and organizers Invited Presentations Leonid E. Golub Ioffe Institute, St. Petersburg, Russia “Ratchet effects in graphene with a lateral superlattice” Sergey Kubatkin Chalmers University, Sweden “Charge neutral epitaxial graphene on SiC: how to get it and what it is useful for” Francesca Iacopi University of Technology Sydney, Australia “Electrical characteristics of graphene grown on silicon wafers” Wataru Norimatsu Nagoya University, Japan “Interface engineering of epitaxial graphene on SiC” Guy Le Lay Université de la Méditerranée, Marseille, France “Silicene: Graphenelike Silicon from Creation to Field Effect Transistor” Elena Obraztsova Prokhorov General Physics Institute, Moscow, Russia “Graphene for Laser Applications” Filippo Giannazzo CNR-IMM, Catania, Italy “Towards high frequency devices based on graphene integration with Nitride semiconductors” Victor Aristov DESY, Hamburg, Germany; ISSP RAS, Chernogolovka, Russia “Electronic structure and transport properties of graphene on SiC/Si(001)” 2 Steven Fairchild Air Force Research Laboratory, USA “Alkali intercalation in graphene for cold atom sources in atomic clocks and inertial navigation systems” Ruth Pachter Air Force Research Laboratory, USA “Optical and electronic signatures of two-dimensional transition metal dichalcogenides upon phase transition and introduction of defects” Rositsa Yakimova Linköping University, Sweden “Insights into detection of toxic metals by Graphene: theory and experiment” Topics • Graphene Electronics, Spintronics, Sensors, Terahertz Devices, Photonics and Energy Applications • Graphene Nanochemistry and Functionalization, bioapplications • Graphene Growth: Epitaxial, CVD, Mechanical and Chemical Exfoliation, and Substrate Transfer • Electronic, Structural, Optical, Mechanical and Transport Properties of Graphene • 2D Materials • Theoretical Investigation and Modelling of Graphene and 2D Materials devices Language The official language of the symposium is English. 3 Program time plan 18 July Wednesday 11:00 – 12:40 Registration 12:40 - 13:40 Opening ( Chair Prof. R.Yakimova) 12:40 Welcome speech of the conference (Vice Rector for Research of ITMO University.Prof V.O. Nikiforov) 12:50 International Research Center of Functional Materials and Devices of Optoelectronics and UniFEL Center at ITMO University (Prof A. E. Romanov) 13:10 100 years of Ioffe Institute ( Prof. S.V.Lebedev, Temporarily Fulfilling Obligations Director Ioffe Institute ) 13:30 ISGD-6 in St.Petersburg ( Prof. A.A.Lebedev ) 13:40 -14:40 LUNCH 14:40 – 16:20 Section 1 “Theory” (Chair Prof. W.Norimatsu) 14:40 INVITED Ratchet effects in graphene with a lateral superlattic Leonid Golub Ioffe Institute, St. Petersburg, Russia 15:20 Disclination approach to modelling graphene with defects Anna L. Kolesnikova, Mikhail A. Rozhkov,Tatiana S. Orlova, Irina Hussainova, Igor S. Yasnikov, Leonid V. Zhigilei, and Alexey E. Romanov ITMO University, St. Petersburg, Russia Institute of Problems of Mechanical Engineering RAS, St. Petersburg, Russia Ioffe Institute RAS, St. Petersburg, Russia Tallinn University of Technology, Tallinn, Estonia Togliatti State University,Togliatti, Russia University of Virginia, Charlottesville VA, USA 15:40 Graphene in the Approximation of Interacting Electrons M.V.Krasinkova Ioffe Institute, St.Petersburg, Russia 16:00 On corrected formula for irradiated graphene quantum conductivity Natalie E. Firsova A.F.Ioffe Physical-Technical Institute, the Russian Academy of Sciences, Peter the Great Saint Petersburg Polytechnic University 16:20 – 16:40 Coffee-break 16:40 – 18:00 Section 2 “Graphene Growth I” (Chair Prof. L.Golub ) 16:40 INVITED Interface engineering of epitaxial graphene on SiC Wataru Norimatsu Department of Materials Science and Engineering, Nagoya University, Japan 17:20 Easily scalable method for the synthesis of large volumes GNP from cyclic hydrocarbons Aleksei Vozniakovskii , Aleksandr Vozniakovskii, Sergey Kidalov 4 Lab.physics for Cluster Structures, Ioffe Institute Sector for polymer nanostructured materials, FGUP “NIISK” 17:40 Formation of bulk ripples in multilayer graphene during sonication assisted liquid phase exfoliation. Andrei Alaferdov , Yakov Kopelevich, Robson Silva,Raluca Savu, Natalia Rozhkova, Dmitry Pavlov, Stanislav Moshkalev CCSNano, University of Campinas DFA/IFGW, University of Campinas Institute of Geology/ KRC RAS Dept. Physics, University of Nizhni Novgorod 18:00 – 20:00 Welcome party 19 July Thursday 10:00 – 11:40 Section 3 “Graphene Growth II” (Chair Prof. A.Romanov ) 10:00 INVITED Electronic structure, transport and magnetic properties of graphene on SiC(001). Victor Aristov , Alexander Chaika, Olga Molodtsova, Han-Chun Wu DESY, D- Hamburg, Germany ISSP RAS, Chernogolovka, Russia CRANN and School of Physics, Trinity College, Dublin, Ireland ITMO University, SaintPetersburg, Russia School of Physics, BIT, Beijing, People’s Republic of China 10:40 Graphene augmented ceramic nanofibers and their applications Roman Ivanov , Masoud Taled, Maria Drozdova and Irina Hussainova, Department of Mechanical and Industrial Engineering ITMO University 11:00 Comparison of technological parameters for graphene growth on 6H-SiC and 4H-SiC by thermal decomposition in argon Dmitry G. Amel’chuk , Sergey P. Lebedev, Valery Yu. Davydov, Alexander N. Smirnov, Ilya A. Eliseyev, Ekaterina V. Gushchina, Mikhail S. Dunaevsckiy, Alexander A. Lebedev, Ioffe Institute, Politekhnicheskaya, St.Petersburg, Russia Saint Petersburg State University, St.Petersburg, Russia ITMO University, Kronverkskiy prospekt, St.Petersburg, Russia 11:20 Towards semiconducting graphene devices: nanopatterning vs graphene hybrid heterostructures on SiC Nunzio Motta , Mojtaba Amjadipour, Jonathan Bradford, Jennifer Macleod, Josh Lipton-Duffin, Francesca Iacopi CPME School and IFE, Queensland University of Technology, George st, Brisbane, QLD, Australia Faculty of Engineering and Information Technology, University of Technology Sydney, NSW Australia. 11:40 – 12:00 Coffee-break 5 12:00 – 13:40 Section 4 “Graphene Characterization” (Chair Prof.V.Aristov ) 12:00 INVITED Electrical characteristics of graphene grown on silicon Francesca Iacopi School of Electrical and Data Engineering, Faculty of Engineering and IT, and Centre for Clean Energy Technology, University of Technology Sydney 12:40 Investigation of the Transport properties of Graphene films grown on 4H-SiC Alexander A. Lebedev , Valerii Yu. Davydov, Sergei P. Lebedev, Alexander N. Smirnov,