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Advanced Science Letters

discontinued in Scopus as of 2017

Country United States - SIR Ranking of United States Subject Area and Category Computer Science 26 Computer Science (miscellaneous)

Energy H Index Ener gy (miscellaneous)

Engineering Engineering (miscellaneous)

Environmental Science Environmental Science (miscellaneous)

Mathematics Mathematics (miscellaneous)

Social Sciences Education Health (social science)

Publisher American Scientic Publishers

Publication type Journals

ISSN 19366612, 19367317

Coverage 2010-2017

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Medicine, Cardiovascular Disease) Harvard University, USA.

Mark P. Mattson (Neuroscience) National Institute on Aging, Baltimore, USA.

Lucio Mayer (Astrophysics, Cosmology) ETH Zürich, Switzerland.

Karl Menten (Radioastromy) Max-Planck-Institut für Radioastromie, Germany.

Yoshiko Miura (Biomaterials/Biosensors) Japan.

Fred M. Mueller (Solid State Physics) Los Alamos National Laboratory, USA.

Garth Nicolson (Illness Research, Cancer Cell Biology) The Institute for Molecular Medicine, Huntington Beach, USA.

Nina Papavasiliou (DNA Mutators, Microbial Virulence, Antiviral Defence, Adaptive Immunity, Surface Receptor Variation) The Rockefeller University, New York, USA.

Panos Photinos (Physics) Southern Oregon University, USA.

Zhiyong Qian (Biomedical Engineering, Biomaterials, Drug Delivery) Sichuan University, CHINA.

Reinhard Schlickeiser (Astrophysics, Plasma Theory and Space Science) Ruhr-Universität Bochum, Germany.

Surinder Singh (Sensors/Nanotechnology) USA.

Suprakas Sinha Ray (Composites/Polymer Science) South Africa.

Koen Steemers (Architechture, Environmental Building Performance) University of Cambridge, UK.

Shinsuke Tanabe (Environmental Chemistry and Ecotoxicology) Ehime University, Japan.

James R. Thompson (Solid State Physics) The University of Tennessee, USA.

Uwe Ulbrich (Climat, Meteorology) Freie Universität Berlin, Germany.

Ahmad Umar (Advanced Materials) Najran University, Saudi Arabia. Frans de Waal (Animal Behavior and Cognition) Emory University, USA.

EDITORIAL BOARD Filippo Aureli, Liverpool John Moores University, UK Marcel Ausloos, Université de Liège, Belgium Martin Bojowald, Pennsylvania State University, USA Sougato Bose, University College, London, UK Jacopo Buongiorno, MIT, USA Paul Cordopatis, University of Patras, Greece Maria Luisa Dalla Chiara, University of Firenze, Italy Dionysios Demetriou Dionysiou, University of Cincinnati, USA Simon Eidelman, Budker Institute of Nuclear Physics, Russia Norbert Frischauf, QASAR Technologies, Vienna, Austria Toshi Futamase, Tohoku University, Japan Leonid Gavrilov, University of Chicago, USA Vincent G. Harris, Northeastern University, USA Mae-Wan Ho, Open University, UK Keith Hutchison, University of Melbourne, Australia David Jishiashvili, Georgian Technical University, Georgia George Khushf, University of South Carolina, USA Sergei Kulik, M.V.Lomonosov Moscow State University, Russia Harald Kunstmann, Institute for Meteorology and Climate Research, Forschungszentrum Karlsruhe, Germany Alexander Lebedev, Laboratory of Semiconductor Devices Physics, Russia James Lindesay, Howard University, USA Michael Lipkind, Kimron Veterinary Institute, Israel Nigel Mason, Open University, UK Johnjoe McFadden, University of Surrey, UK B. S. Murty, Indian Institute of Technology Madras, Chennai, India Shahab A. A. Nami, Aligarh Muslim University, India Heiko Paeth, Geographisches Institut der Universität Würzburg, Germany Matteo Paris, Universita' di Milano, Italia David Posoda, University of Vigo, Spain Paddy H. Regan, University of Surrey, UK Leonidas Resvanis, University of Athens, Greece Wolfgang Rhode, University of Dortmund, Germany Derek C. Richardson, University of Maryland, USA Carlos Romero, Universidade Federal da Paraiba, Brazil Andrea Sella, University College London, London, UK P. Shankar, Indira Gandhi Centre for Atomic Research, Kalpakkam, India Surya Singh, Imperial College London, UK Leonidas Sotiropoulos, University of Patras, Greece Roger Strand, University of Bergen, Norway Karl Svozil, Technische Universität Wien, Auastria Kit Tan, University of Copenhagen, Denmark Roland Triay, Centre de Physique Theorique, CNRS, Marseille, France Rami Vainio, University of Helsinki, Finland Victor Voronov, Bogoliubov Laboratory of Theoretical Physics, Dubna, Russia Andrew Whitaker, Queen's University Belfast, Northern Ireland Lijian Xu, Hunan University of Technology, China Alexander Yefremov, Peoples Friendship University of Russia, Russia Avraam Zelilidis, University of Patras, Greece Alexander V. Zolotaryuk, Ukrainian Academy of Sciences, Ukraine

RESEARCH ARTICLE Adv. Sci. Lett. Vol 23, No.4, 2017

Printed in the United States of America

CHARACTERIZATION OF L BAND ERBIUM DOPED FIBER AMPLIFIER

Anwar Mujadin ,1, Ary Syahriar ,1, 2 1)2) Department of Electrical Engineering, University Al Azhar Indonesia 2) Agency for the Assessment and Application of Technology (BPPT) Komplek Masjid Agung Al Azhar Jl. Sisingamangaraja Kebayoran Baru Jakarta Selatan 12110 1) Corresponding author, e-mail: [email protected]

Erbium doped fiber amplifiers (EDFA) have become major key components for dense wavelength division multiplexing (DWDM) in optical fiber communication systems. Recently, an L-band EDFA have gain popularity to extend optical bandwidth level in such a system. It operates in a relatively low population inversion that a total positive gain can be achieved in L-band signals level while energy absorption occurs at the conventional band. Therefore, pump power efficiency has become major issues in L band EDFA to obtain high gain and low noise figure (NF). In this research we have developed high stability and accuracy circuits using high end technology components to maximize power pumping level that is used for laser diode pumping and power meter. We used forward pumping scheme by using simple single pump structure with 980 nm pump laser into short length L band EDFA. In this experiment we have used L band EDFA with the length of 13.5 meters, the purpose is to get short length L band with efficient pumping power and to get good gain output at several pumping and signal power. The experimental results then fitted with theoretical analysis to determine performances of overall EDFA system. The performance parameter such as gain, NF and output power was taken at L band ITU wavelength standard with four different laser diode pumping powers of 53.6 mW, 61.1 mW, 64.83 mW and 68.25 mW respectively. An input signal power ranging was of -20 dBm, -15dBm, -10 dBm and -5 dBm respectively.

Keywords: High stability laser diode pumping circuitry, optical amplifier, noise figure, EDFA L- band.

1. INTRODUCTION and bidirectional pumping 2,3. System design based EDFA optical reinforcement consists of four parts, namely the Dense wavelength division multiplexing (DWDM) passive optical component, active optical component, technology is a key technology for the future generation system microcontroller and the high regulated power of optical network where it is directly connected to high supply4. performance network routers. One of the main components is EDFA that play an important role to Figure 1 shows a configuration lay out of EDFA enhance optical output in optical network performances. experimental setting. Therefore designing of an optical amplifier can directly affect the high performance of an optical system. Optical amplification using EDFA is quite common on long distance communication systems. Previously long wavelength EDFA i.e. L band EDFA has attracted much intention and played a major role in extending optical bandwidth from previous C band structure. Similar to those C band structures, L band can also be configured using single pump scheme but with more pumping power required to get similar gain as that in C band. Therefore, pumping scheme has become major issues in L band EDFA to obtain high gain and low NF as well as pump power efficiency 1. In this paper we demonstrate a simple single pump structure with 980 nm pump laser and short Figure 1. Configuration layout of EDFA experimental L band EDFA. setting.

2. HARDWARE IMPLEMENTATION Figure 2 shows a complete set of L band EDFA with In general, there are three setup configurations EDFA electronics control systems. pumping namely: forward pumping, backward pumping 3695 Adv. Sci. Lett. Vol. 23, No. 4, 2017 doi:10.1166/asl.2017.9031

Adv. Sci. Lett. RESEARCH ARTICLE

Figure 4 shows pin out of RPSET as current adjustment laser diode pimping using linear potentiometer.

Experimental setup for characterization of L band with L band EDFA of 13.5 meters long at forward pumping is shown in Figure 5.

Source ( TLS AQ4321) Power meter (OSA AQ6317)

Figure 2. A complate set of L band EDFA with electronics control systems. Signal Out Isolator 1 Isolator 2 For characterization of L band EDFA, we used of single 95% 99% FC1 stage forward pumping is shown in schematic diagram in WDM FC2 EDF Figure 3 below. 5% 1 % Amperemeter Cheked Isolator EDF Isolator Signal 95% Signal Cheked 99% AD8304 ADN2830 AD8304 FC Laser In WDM FC Out power meter power meter 5% Driver 1% voltmeter LDP Heat Sink Current 980 nm Injeksi (mA) Laser Diode Pumping Cheked Adjust V Splacing voltmeter Cheked OUT V Power In (mV) FC = Fused Coupler OUT CONTROLLER Power Out (mV)

Figure 3. Single stage forward pumping Schematic Figure 5. Experiment setup for characterization of Lband diagram. EDFA with forward pumping.

Experiments were conducted without the use of a Experimental setup in Figure 5 consists of: microcontroller. Controller block in Figure 3 is represent a. Isolator 1 and isolator 2 as rectifier signal. active electronic components (integrated circuit) consists b. One uncooled LDP (LU980) with specifications of diode laser pumping and power meter. ADN2830 and of 980 nm wavelength and 180 mW output AD8304 are high performance active components power6 . (integrated circuit) from Analog Device as laser diode c. WDM coupler with specifications of 980 nm and pumping and power meter to occupy the controller block. 1550 nm channel input distribution 7. Two ADN2830 Used in parallel current boosting mode to d. L band EDF 13.5 m long with specification: achieve 400 mA current pumping as shown in figure 4 mode field diameter of 5.5 ± 0.5 µm, @ 1550 nm below 5. wavelength, peak absorption 25 ± 2 dB/m near 1530 nm and ≥ 7.0 dB/m near 980 nm, loss of ≤ 15.0 dB/km @ 1200 nm, mode cut-off at 960 ± 50 nm and core numerical aperture is 0.21 e. Tap coupler 1 (FC1) with specification 95% and 5% channel output splitter. f. Tap coupler 2 (FC2) with specification 99 % and 1% channel output splitter.

FC1 at 5% channel output splitter is selected for minimum limit input signal to power meter AD8304 at the smallest input signal TLS about -30 dBm. FC2 at 1% channel output splitter is selected for maximum of power meter AD8304 at 0 dBM the most output signal EDFA which can still be read.

3. RESEARCH METHODOLOGY

TLS swept in the work area at international

Figure 4. Two ADN2830 in parallel 400 mA telecommunication union (ITU) grid in the wavelength 5 range of L band (1570 nm-1620 nm), then the output current boosting mode . signal recorded by OSA in the form of numeric data. 3696

RESEARCH ARTICLE Adv. Sci. Lett.

injection Observation Characterization performance of L band Figure 8 shows the measurement and calculation of the gain EDFA including: and NF at 53.6 mW (17.3 dBm) LDP power for -20dBm a. Characterization of the uncooled laser diode input signal with wavelength constant of 1589.52 nm. pumping (LDP) 980 nm. Observations measurement current injection to LDP toward LDP power. b. Observation amplified spontaneous emission (ASE) λ input measurement. Observation measurement LDP power Δλ P -P toward ASE issued without signal input TLS. signal-out noise-out λ c. Calculated Gain and noise figure (NF). Observation 1 λ2 Power output amplification output signal toward variations input signal at LDP power constantly. d. Characterization EDFA L band for variation input P = P signal toward gain at LDP power constantly. noise-out ASE

4. EXPERIMENTAL RESULTS

Graph performance of LDP 980 nm, current injection toward LDP power is shown in figure 6. To avoid LDP Figure 8. Measurement and calculation of the gain and NF damage, RPSET must be tuning slowly using wire wound at 53.6 mW (17.3 dBm) LDP power for -20dBm input signal potentiometer to tuning current injection LDP gradually, with wavelength constant of 1589.52 nm. especially at lasing point (0 mA to 26 mA current injection). From Figure 8 with input signal of 1589.52 nm and power input signal of (-20 dBm) can be amplified up to -2.65 dBm. Gain and NF can be calculated by using 90 following Equations 8: ) 80 W 70 m (

r 60 e  w 50 PPPsignal out noise out noise out o    P 40 G = P P D 30 signal in L  20 10 0 Figure 9 shows chart of ASE at 53.6 mW (17.3 dBm) LDP 50 60 70 80 90 100 110 120 130 140 150 160 170 180 190 200 power constant with ITU grid L band wavelength without input signal. Current Injection to LDP (mA) -36.268 Figure 6. Graph performance of LDP 980 nm, current -36.341

injection toward LDP power ) B -36.414 d (

Figure 7 shows ASE spectrum pattern of L band EDFA with S -36.487 LDP power 53.6 mW (150 mA current injection), resulting A -36.560 in population inversion with ASE average of -37.66 dBm. -36.633 3 4 1 8 2 6 8 8 0 0 4 8 2 4 8 2 6 0 4 6 4 9 1 6 0 0 9 0 0 9 0 1 9 1 7 7 7 8 9 9 0 0 1 1 9 0 9 1 8 9 6 5 6 6 5 6 6 5 6 5 5 5 5 5 5 6 6 6 6 5 6 5 6 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 L Band Wavelength Input Signal (nm)

Figure 9. Chart of the Gain and NF at 53.6 mW (17.3 dBm) LDP power constant with ITU grid L band wavelength without input signal.

Figure 10 shows calculation of Gain and NF at 53.6 mW (17.3 dBm) LDP power constant and -20dBm input signal with ITU grid L band wavelength.

Figure 7. ASE spectrum pattern L band EDFA with pump power 53.6 mW (17.3 dBm) with 150mA current 3697

Adv. Sci. Lett. RESEARCH ARTICLE

-16.00 22.00 Input Signal Power Constant -14.00 20.00 LDP Power Constant -10 dBm (0.1 mW) 53.60 mW(150 mA) 18.00 61.14 mW(160 mA) 12.00 64.83 mW(170 mA)

) 68.25 mW(180 mA) ) 16.00

10.00 B B d ( d Gain

( 14.00

8.00 n i E

NF a 12.00 S 6.00 G A 4.00 10.00 2.00 8.00 6.00 3 4 1 8 2 6 8 8 0 0 4 8 2 4 8 2 6 0 4 6 4 9 1 0.00 6 0 0 9 0 0 9 0 3 1 9 1 4 1 8 7 7 7 8 9 9 0 0 1 1 9 0 2 6 9 8 8 0 1 0 4 8 2 4 8 2 6 0 4 6 8 9 4 9 1 6 0 6 5 6 6 5 6 6 5 6 5 5 5 5 5 5 6 6 6 6 5 0 6 9 0 0 5 6 9 0 5 5 1 9 1 7 7 7 8 9 9 0 0 1 1 9 0 9 1 8 9 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 6 1 1 5 6 6 5 6 6 5 6 5 5 5 5 5 5 6 6 6 6 5 6 5 6 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 L Band Wavelength Input Signal (nm) L Band Wavelength Input Signal (nm) c) Figure 10.Chart of the Gain and NF at 53.6 mW (17.3 dBm)

LDP power constant for -20dBm input signal with ITU L 22.00 band wavelength. 20.00 LDP Power Constant Input Signal Power Constant 53.60 mW(150 mA) 18.00 -5 dBm (0.32 mW) 61.14 mW(160 mA) 64.83 mW(170 mA) ) 16.00 68.25 mW(180 mA)

Figure 10 indicates that the noise figure (NF) is B d (

14.00

always greater than one, it prove the amplifier always give n i

a 12.00 extra noise during the process of amplification. G 10.00 8.00

Figure 11 (a), (b), (c) and (d) shows chart Gain and output 6.00 3 4 1 8 2 6 8 8 0 0 4 8 2 4 8 2 6 0 4 6 4 9 1 6 0 0 9 0 0 9 0 1 9 1 7 7 7 8 9 9 0 0 1 1 9 0 9 1 8 9 6 5 6 6 5 6 6 5 6 5 5 5 5 5 5 6 6 6 6 5 6 5 6 power was taken at L band ITU grid wavelength with four 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 different laser diode pumping powers of 53.6 mW (150 1 1 L Band Wavelength Input Signal (nm) mA), 61.1 mW (160 mA), 64.83 mW (170 mA) and 68.25 d) mW (180 mA) respectively, toward A input signal power Figure 11. Gain and output power was taken at L band ranging was of -20 dBm (0.01 mW), -15 dBm (0.032 ITU wavelength with four different laser diode pumping mW), -10 dBm (0.1 mW) and -5 dBm (0.32 mW) powers of a) 53.6 mW (150mA), b) 61.1 mW (160 mA), c) respectively. 64.83 mW (170 mA) and d) 68.25 mW (180mA) respectively toward A input signal power constant ranging 22.00 Input Signal Power Constant LDP Power Constant was of -20 dBm (0.01 mW), -15 dBm (0.032 mW), -10 20.00 -20 dBm (0.01 mW) 53.60 mW(150 mA) 18.00 61.14 mW(160 mA) dBm (0.1mW) and -5 dBm (0.32 mW) respectively. 64.83 mW(170 mA) ) 16.00 68.25 mW(180 mA) B d ( 14.00 5. CONCLUSIONS n i a 12.00 L band EDFAs spectral gain and noise figure G 10.00 characteristics were analysed through experiments and 8.00 6.00 simulation. By using optimized 13.5 m fibre length at 3 4 1 8 2 6 8 8 0 0 4 8 2 4 8 2 6 0 4 6 4 9 1 6 0 0 9 0 0 9 0 1 9 1 7 7 7 8 9 9 0 0 1 1 9 0 9 1 8 9 1580.45 nm and 53.6 mW (150 mA current) pump power 6 5 6 6 5 6 6 5 6 5 5 5 5 5 5 6 6 6 6 5 6 5 6 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 to get amplified spontaneous emission (ASE) average of - L Band Wavelength Input Signal (nm) 36.45 dBm. a) The performance of gain at L band ITU grid wavelength 22.00 with four different laser diode pumping powers of 53.6 Input Signal Power Constant 20.00 LDP Power Constant mW, 61.1 mW, 64.83 mW and 68.25 mW respectively -15 dBm (0.032 mW) 53.60 mW(150 mA) 18.00 61.14 mW(160 mA) 64.83 mW(170 mA) with variation range of different input signal power ) 16.00 68.25 mW(180 mA) B ranging was used of -20 dBm, -15dBm, -10 dBm and -5 d (

14.00 n

i dBm respectively. From the analysis result that increasing

a 12.00 G 10.00 current injection LDP every 10 mA, the input signal 8.00 amplified by 1.76dB .Otherwise the amplification (gain)

6.00 will be decrease 1.43 dB if increasing input signal power 3 4 1 8 2 6 8 8 0 0 4 8 2 4 8 2 6 0 4 6 4 9 1 6 0 0 9 0 0 9 0 1 9 1 7 7 7 8 9 9 0 0 1 1 9 0 9 1 8 9 6 5 6 6 5 6 6 5 6 5 5 5 5 5 5 6 6 6 6 5 6 5 6 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 by +5 dBm. L Band Wavelength Input Signal (nm) As a result, a high gain 20.64 dB and a moderate noise b) figure 3.9 dB values were obtained in the small signal regime. In general, with its relatively high NF values, this type of L-EDFA can be used as an optical booster amplifier not requiring very low noise figures. Future work, in this research needs further developed with bidirectional LDP for increasing the amplification EDFA with the same length of L band EDF.

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RESEARCH ARTICLE Adv. Sci. Lett.

ACKNOWLEDGMENTS

This prototype was supported by Agency for the Assessment and Application of Technology (BPPT) and Institutions of research and community service (LPPM) Al Azhar University Indonesia funding research grant 2013.

REFERENCES

[1] B.Allen, J.Rouse.”Optical networking and WDM Lightwave”Cambrian System Corp. pp.47-52, August 1998. [2] S.Y.Park, et al., “Doped fiber length and pump power of gain- flattened EDFAs”, Elect. Lett. 32, 2161, 1996 [3] Beker, P.c., Olsson, N.A., & Simpson, J.R. (1999). Erbium- doped fiber amplifiers fundamentals and technology. USA: Academic Press [4] M. Karasek, “The design of L-band EDFA for multiwavelength applications,” J. Opt. A., vol.3, pp. 96-102, 2001 [5] Analog Device.(2000). ADN2830 datasheet. July 23, 2014. http://www.alldatasheet.com [6] Technologies, Bookham .(2000). LU980L Mini DIL Uncooled Laser. Maret 21, 2014. http://www.alldatasheet.com. [7] Jeff, H. (2002). Wavelenght Division Multiplexing. USA: Prentice Hall. [8] Beker, P.c., Olsson, N.A., & Simpson, J.R. (1999). Erbium- doped fiber amplifiers fundamentals and technology. USA: Academic Press

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