DOCSLIB.ORG

Arxiv:1802.07220V1 [Cond-Mat.Str-El] 20 Feb 2018 1

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
Arxiv:1802.07220V1 [Cond-Mat.Str-El] 20 Feb 2018 1 Thermoelectricity in Correlated narrow-gap semiconductors Jan M. Tomczak Institute of Solid State Physics, TU Wien, A-1040 Vienna, Austria We review many-body effects, their microscopic origin, as well as their impact onto thermoelec- tricity in correlated narrow-gap semiconductors. Members of this class|such as FeSi and FeSb2| display an unusual temperature dependence in various observables: insulating with large ther- mopowers at low temperatures, they turn bad metals at temperatures much smaller than the size of their gaps. This insulator-to-metal crossover is accompanied by spectral weight-transfers over large energies in the optical conductivity and by a gradual transition from activated to Curie-Weiss-like behaviour in the magnetic susceptibility. We show a retrospective of the understanding of these phenomena, discuss the relation to heavy-fermion Kondo insulators|such as Ce3Bi4Pt3 for which we present new results|and propose a general classification of paramagnetic insulators. From the latter FeSi emerges as an orbital-selective Kondo insulator. Focussing on intermetallics such as sili- cides, antimonides, skutterudites, and Heusler compounds we showcase successes and challenges for the realistic simulation of transport properties in the presence of electronic correlations. Further, we advert to new avenues in which electronic correlations may contribute to the improvement of thermoelectric performance. PACS numbers: 71.27.+a, 71.10.-w, 79.10.-n CONTENTS 2. A microscopic understanding: spin fluctuations and Hund's physics 35 Avant-propos 2 3. Realistic many-body calculations for Ce3Bi4Pt3. 38 I. Introduction 3 E. Kondo insulators, transition-metal A. Correlated narrow-gap semiconductors: a intermetallics and oxides: A categorization 39 brief overview 3 1. The DMFT perspective on insulators 39 1. Signatures of correlation effects. 5 2. A toy-model. 39 2. Thermoelectricity. 7 3. a DFT-based proxy to distinguish ionic 3. Other applications. 8 from covalent insulators. 40 4. Perspective. 8 4. Comparison of the ab initio results of FeSi B. Correlated narrow-gap semiconductors vs. and Ce3Bi4Pt3. 41 Kondo insulators 8 F. Covalent insulators vs. Kondo insulators: 1. Charge degrees of freedom. 10 Hubbard vs. Anderson 43 2. Spin degrees of freedom. 12 1. The model Hamiltonians 43 3. Interplay of charge and spin degrees of 2. Dynamical mean-field theory results. 43 freedom 13 G. Electron-lattice effects 46 4. Spin-orbit effects. 17 1. Thermal conductivity. 46 5. Thermoelectricity. 17 2. Phonon structure and electron-phonon 6. Summary. 18 coupling. 46 3. Influence of vibrations onto the electronic II. Theories of correlated narrow-gap structure. 47 semiconductors 19 A. Early phenomenological scenarios 19 III. Thermoelectricity 49 B. Band-structures and many-body perturbation A. General considerations 50 theory 21 1. Optimizing thermoelectric performance. 50 arXiv:1802.07220v1 [cond-mat.str-el] 20 Feb 2018 1. FeSi, other B20 compounds, and a 2. Electronic correlations and comparison to oxides. 21 thermoelectricity: friends or foes? 51 2. The marcasites: FeSb2, FeAs2 & Co. 25 3. Limits of a purely electronic picture of 3. The Kondo insulator Ce3Bi4Pt3. 28 thermoelectricity. 52 C. Many-body models 30 4. Electronic correlations: a challenge for ab 1. Periodic Anderson model (PAM). 30 initio transport methodologies. 54 2. Hubbard models. 32 B. Silicides: FeSi, RuSi and their alloys. 55 D. Many-body electronic-structure theory 33 1. Simulations of the thermopower. 55 1. Theoretical description of experimental 2. Influence of correlation-induced observables of FeSi. 33 incoherence. 56 2 3. Doped FeSi. 56 Nowadays, most commercially used thermoelectrics 4. A comparison of FeSi with RuSi. 56 are doped intermetallic narrow-gap semiconductors, built C. Marcasite di-Antimonides: FeSb2, CrSb2 & from post-transition metals, pnictogens, and chalcogens, Co. 58 e.g., Pb(Se,Te) and Bi2Te3, while at high temperatures 1. Polycrystalline samples|physics akin to group-IV element alloys, Si1−xGex, are deployed. These FeSi? 58 materials combine good powerfactors S2/ρ (determined 2. Single crystals|do correlations cause the by the thermopower S and the resistivity ρ) with reason- large thermopower? 59 ably low thermal conductivities κ to reach a favourable 3. Empirical evidence for a phonon-drag thermoelectric conversion efficiency (measured by the fig- thermopower. 60 ure of merit ZT = S2T=(κρ)). Indeed doped semicon- 4. Comparison to FeAs2 60 ductors present the optimal compromise between good conduction (ρ small for high carrier density) and a high 5. Constraints to a theory of FeSb2: correlation of features in transport thermopower (S large for low carrier densities), see Fig. observables. 61 (33). Much recent thermoelectric research has been de- voted to reducing contributions from phonons to the ther- 6. Modelling the phonon-drag in FeSb2: evidence for important role of in-gap mal conduction via micro-/nano-/super-structuring or by states. 62 finding crystal structures with intrinsically low κ. Here, 2 7. Existence and possible origin of in-gap we will instead focus on the powerfactor S /ρ, which is states. 62 controlled by the electronic structure of a material (see 8. Outlook. 63 however Sec. III C 6). D. Skutterudite Antimonides: a focus on One class of materials whose electronic structures give rise to a particularly extensive|and so far largely CoSb3. 65 1. Experimental and theoretical knowledge. 65 untapped|panoply of functionalities are correlated ma- terials. In these materials electrons interact strongly with 2. Doped CoSb3. 66 each other, causing a high sensitivity of even fundamen- E. Heuslers compounds: a focus on Fe2VAl 67 1. Experimental knowledge. 67 tal properties to perturbations, such as changes in tem- 2. Theoretical results. 69 perature, pressure, doping, and applied external fields. These stimuli can induce unusual behaviours, e.g., metal- IV. Conclusions and outlook 71 insulator transitions, various types of long-range order, and, in particular, large response functions. These phe- Acknowledgments 72 nomena are, both, a great challenge for fundamental re- search and a harbinger for technical developments in sen- References 73 sors, switches, transistors and, indeed, thermoelectric de- vices. Electronic correlation effects occur in systems in which AVANT-PROPOS orbitals of small radial extent|thus particularly those with maximal angular quantum number: 3d, 4f|are partially filled and thus strongly affect low-energy prop- Thermoelectricity is the striking ability of some mate- erties. In consequence, correlations effects are ubiquitous rials to generate an electrical voltage when subjected to among many families of compounds, such as transition a temperature gradient (and vice versa). Prospective ap- metals, their oxides, silicides, pnictides, chalcogenides, plications are multifarious, ranging from radiation and as well as lanthanide and actinide based materials. Ex- temperature sensors, vacuum gauges, to Peltier coolers ploiting various aspects of correlation effects numerous and power generators. However, the current efficiency of new functionalities were realized or have been proposed. thermoelectric conversion is insufficient for commercially Among them are new transparent conductors[1], oxide viable coolers and generators on a larger scale. Indeed, electronics[2], such as the Mott transistor[3, 4], electrode for these applications, thermoelectric devices are so far materials[5], eco-friendly pigments[6], or intelligent win- limited to niche products for which flexibility in design, dow coatings[7, 8]. reliability, and maintenance-free operation trump aspects of cost. Examples are low-performance fridges, waste- Naturally the question arises, whether correlation ef- heat recovery modules and power supplies for space- fects could also be used to overcome limitations of present probes.1 thermoelectrics, all of which are (see above) uncorre- lated narrow-gap semiconductors. This question con- stitutes one of the interests in correlated narrow-gap semiconductors|the subject of this article. The review is organized as follows: 1 The prime example are the radioisotope thermoelectric genera- tors aboard Voyager 1 that have been operating since 5-Sep-1977 1. Introduction. In Section (I) we give an overview and will continue to power the spacecraft|now well into inter- of characteristic signatures of electronic correlation ef- stellar space|until at least 2025. fects in narrow-gap semiconductors and detail in which 3 material classes they can be found. Examples include tion (III A), we review in Section (III A 2) the poten- transition-metal-based intermetallics, Skutterudites, and tial influence of electronic correlations onto thermoelec- Heusler compounds. Since basic observables in some of tric performance. In Section (III A 3) we investigate the the identified compounds bear a cunning empirical re- impact of basic many-body renormalizations in a semi- semblance to that of heavy-fermion Kondo insulators, we conductors and motivate that the thermopower has an give in Section (I B) a quite extensive comparison of both upper bound if excitations are coherent. Effects of inco- types of materials, focusing on a contrasting juxtaposi- herence (finite lifetimes) are studied in Section (III A 4) tion of the prototype compounds FeSi and Ce3Bi4Pt3. and demonstrated to be beyond semi-classical Boltzmann 2. Theories of correlated narrow-gap semiconductors. approaches. Then, we review experimental findings and A key part of this review is dedicated to the description
Load more

Recommended publications
  • High-Throughput Prediction of the Ground-State Collinear Magnetic Order of Inorganic Materials Using Density Functional Theory
    www.nature.com/npjcompumats Corrected: Publisher Correction ARTICLE OPEN High-throughput prediction of the ground-state collinear magnetic order of inorganic materials using Density Functional Theory Matthew Kristofer Horton1, Joseph Harold Montoya1, Miao Liu 2 and Kristin Aslaug Persson1,3 We present a robust, automatic high-throughput workflow for the calculation of magnetic ground state of solid-state inorganic crystals, whether ferromagnetic, antiferromagnetic or ferrimagnetic, and their associated magnetic moments within the framework of collinear spin-polarized Density Functional Theory. This is done through a computationally efficient scheme whereby plausible magnetic orderings are first enumerated and prioritized based on symmetry, and then relaxed and their energies determined through conventional DFT + U calculations. This automated workflow is formalized using the atomate code for reliable, systematic use at a scale appropriate for thousands of materials and is fully customizable. The performance of the workflow is evaluated against a benchmark of 64 experimentally known mostly ionic magnetic materials of non-trivial magnetic order and by the calculation of over 500 distinct magnetic orderings. A non-ferromagnetic ground state is correctly predicted in 95% of the benchmark materials, with the experimentally determined ground state ordering found exactly in over 60% of cases. Knowledge of the ground state magnetic order at scale opens up the possibility of high-throughput screening studies based on magnetic properties, thereby accelerating discovery and understanding of new functional materials. npj Computational Materials (2019) 5:64 ; https://doi.org/10.1038/s41524-019-0199-7 INTRODUCTION treatment of paramagnetic phases has been considered15 in Modern high-performance computing has allowed the simulation addition to the antiferromagnetic cases.
    [Show full text]
  • Intercalation As a Versatile Tool for Fabrication, Property Tuning, and Phase Transitions in 2D Materials
    www.nature.com/npj2dmaterials REVIEW ARTICLE OPEN Intercalation as a versatile tool for fabrication, property tuning, and phase transitions in 2D materials Manthila Rajapakse1, Bhupendra Karki 1, Usman O. Abu 2, Sahar Pishgar 1, Md Rajib Khan Musa1, S. M. Shah Riyadh 1, Ming Yu1, ✉ ✉ Gamini Sumanasekera1,2 and Jacek B. Jasinski 2 Recent advances in two-dimensional (2D) materials have led to the renewed interest in intercalation as a powerful fabrication and processing tool. Intercalation is an effective method of modifying the interlayer interactions, doping 2D materials, modifying their electronic structure or even converting them into starkly different new structures or phases. Herein, we discuss different methods of intercalation and provide a comprehensive review of various roles and applications of intercalation in next‐generation energy storage, optoelectronics, thermoelectrics, catalysis, etc. The recent progress in intercalation effects on crystal structure and structural phase transitions, including the emergence of quantum phases are also reviewed. npj 2D Materials and Applications (2021) 5:30 ; https://doi.org/10.1038/s41699-021-00211-6 INTRODUCTION could lead to the film’s distortions and formation of its super- Along with the emergence of nanotechnology, the study of low- structures. Likewise, transferring CVD grown 2D materials from the 1234567890():,; dimensional materials has gained much attention due to some substrate is challenging. Nonetheless, intercalation-assisted exfo- unusual material properties1. The discovery of graphene and other liation can be used to fabricate free-standing 2D materials. While two-dimensional (2D) materials, including phosphorene2, sili- mechanical exfoliation using a scotch-tape is one of the oldest cene3,4, germanene4, MXenes5, and transition metal dichalcogen- methods of fabricating 2D materials, this method is commonly ides (TMD)6, has led to the recent rapid growth in this field.
    [Show full text]
  • Behavior of the AB2-Type Compounds at High Pressures and High Temperatures
    Behavior of the AB2-Type Compounds at High Pressures and High Temperatures Cite as: Journal of Physical and Chemical Reference Data 11, 1005 (1982); https:// doi.org/10.1063/1.555670 Published Online: 15 October 2009 Leo Merrill ARTICLES YOU MAY BE INTERESTED IN Behavior of the AB-type compounds at high pressures and high temperatures Journal of Physical and Chemical Reference Data 6, 1205 (1977); https:// doi.org/10.1063/1.555565 Crystal structure prediction using ab initio evolutionary techniques: Principles and applications The Journal of Chemical Physics 124, 244704 (2006); https://doi.org/10.1063/1.2210932 The metallization and superconductivity of dense hydrogen sulfide The Journal of Chemical Physics 140, 174712 (2014); https://doi.org/10.1063/1.4874158 Journal of Physical and Chemical Reference Data 11, 1005 (1982); https://doi.org/10.1063/1.555670 11, 1005 © 1982 American Institute of Physics for the National Institute of Standards and Technology. Behavior of the AB2 Type Compounds at High Pressures and High Temperatures Leo Merrill* Department of Chemistry, Brigham Young University, Provo, Utah 84602 Data on the polymorphic phase transformations of known compounds and new syn­ tlu:::tk compounds of the type AD2 have been compiled amI evaluated. All available pres­ sure studies have been included and referenced. Pressure-temperature phase diagrams showing first order solid-solid phase boundaries and/or melting curves showing the best fit to the experimental data are included. For some materials which can be produced only by chemical syrithesis techniques at high pressures and high temperatures, reaction-pro­ duct diagrams have been employed to estimate the region of thermodynamic stability.
    [Show full text]
  • Nomenclature of Inorganic Chemistry (IUPAC Recommendations 2005)
    NOMENCLATURE OF INORGANIC CHEMISTRY IUPAC Recommendations 2005 IUPAC Periodic Table of the Elements 118 1 2 21314151617 H He 3 4 5 6 7 8 9 10 Li Be B C N O F Ne 11 12 13 14 15 16 17 18 3456 78910 11 12 Na Mg Al Si P S Cl Ar 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 K Ca Sc Ti V Cr Mn Fe Co Ni Cu Zn Ga Ge As Se Br Kr 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 Rb Sr Y Zr Nb Mo Tc Ru Rh Pd Ag Cd In Sn Sb Te I Xe 55 56 * 57− 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 Cs Ba lanthanoids Hf Ta W Re Os Ir Pt Au Hg Tl Pb Bi Po At Rn 87 88 ‡ 89− 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 Fr Ra actinoids Rf Db Sg Bh Hs Mt Ds Rg Uub Uut Uuq Uup Uuh Uus Uuo * 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 La Ce Pr Nd Pm Sm Eu Gd Tb Dy Ho Er Tm Yb Lu ‡ 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 Ac Th Pa U Np Pu Am Cm Bk Cf Es Fm Md No Lr International Union of Pure and Applied Chemistry Nomenclature of Inorganic Chemistry IUPAC RECOMMENDATIONS 2005 Issued by the Division of Chemical Nomenclature and Structure Representation in collaboration with the Division of Inorganic Chemistry Prepared for publication by Neil G.
    [Show full text]
  • Page References in Bold Type Refer to Primary Articles. Page References Followed by T Indicate Material in Tables. 1781
    INDEX Page references in bold type refer to primary articles. Page references followed by t indicate material in tables. A Acetone [CAS: 67–64–1], 7, 899 Acid salt, 1456 A477, producing organism, 118t gas separation, 39t Acids and bases, 12–13 A42867, producing organism, 118t physical properties, 900t Acid sludge, excess air for combustion, 426t A47934, producing organism, 118t Acetone chloride, 7 Acid spoil, 1439t A51568A, producing organism, 118t Acetone cyanohydrin, 7, 465t Acid sulfite pulping process, 1379 A80407 A, producing organism, 118t Acetonephenyl-hydrazone, 7 Acid-thiol ligases, 571t A82846 A, producing organism, 118t Acetonesemicarbazone, 7 Acidulants and alkalizers (Foods), 13–14 AAAS (American Association for the Advancement Acetone-sodiumbisulfite, 7 Acifluorfen, environmental health advisories, 771t of Science), 1 Acetonitrile, 75 Acinetobacter, amphenicol susceptibility, 115t AAD-216 complex, producing organism, 118t Acetophenone, physical properties, 900t Acmite-aegerine, 14 AAD-609 complex, producing organism, 118t Acetorphan, 92t Acne vulgaris, 99 AAJ-271, producing organism, 118t Acetoxime, 7 A35512 complex, producing organism, 118t AB-65, producing organism, 118t Acetylacetone, physical properties, 900t A40926 complex, producing organism, 118t Abaca, 1, 632t Acetyl benzoyl peroxide, properties, 1237t A41030 complex, producing organism, 118t Abherent, 1 Acetyl tert-butanesulfonyl peroxide, properties, Aconitase, 282t Ablating material, 1 1237t metal chelate enzyme, 323t Ablation, 1 Acetyl chloride, physical properties,
    [Show full text]
  • UCLA Electronic Theses and Dissertations
    UCLA UCLA Electronic Theses and Dissertations Title Nanoscale contact engineering for Si/Silicide nanowire devices Permalink https://escholarship.org/uc/item/4gh912r9 Author Lin, Yung-Chen Publication Date 2012 Peer reviewed|Thesis/dissertation eScholarship.org Powered by the California Digital Library University of California UNIVERSITY OF CALIFORNIA LOS ANGELES Nanoscale contact engineering for Si/Silicide nanowire devices A dissertation submitted in partial satisfaction of the requirements for the degree Doctor of Philosophy in Materials Science and Engineering by Yung-Chen Lin 2012 © Copyright by Yung-Chen Lin 2012 ABSTRACT OF THE DISSERTATION Nanoscale contact engineering for Si/Silicide nanowire devices By Yung-Chen Lin Doctor of Philosophy in Materials Science and Engineering University of California, Los Angeles, 2012 Professor Yu Huang, Chair Metal silicides have been used in silicon technology as contacts to achieve high device performance and desired device functions. The growth and applications of silicide materials have recently attracted increasing interest for nanoscale device applications. Nanoscale silicide materials have been demonstrated with various synthetic approaches. Solid state reaction wherein high quality silicides form through diffusion of metal atoms into silicon nano-templates and the subsequent phase transformation caught significant attention for the fabrication of nanoscale Si devices. Very interestingly, studies on the diffusion and phase transformation processes at nanoscale have indicated possible deviations from the bulk and the thin film system. Here we studied growth kinetics, electronic properties and device applications of nanoscale silicides formed through solid state reaction. ii We have grown single crystal PtSi nanowires and PtSi/Si/PtSi nanowire heterostructures through solid state reaction. TEM studies show that the heterostructures have atomically sharp interfaces free of defects.
    [Show full text]
  • Preparation, Structure and Properties of New Ternary Chalcogenides and Germanides of the Metals from the First Transition Series, Cr, Mn, Fe and Ni
    Preparation, Structure and Properties of New Ternary Chalcogenides and Germanides of the Metals from the First Transition Series, Cr, Mn, Fe and Ni DISSERTATION zur Erlangung des Grades eines Doktors der Naturwissenschaften vorgelegt von Dipl. Ing. – Chem. Krasimir Aleksandrov geb. am 03.12.1975 in Vratsa eingereicht beim Fachbereich 8 der Universität Siegen Siegen 2005 Berichterstatter: Prof. Dr. H. -J. Deiseroth Prof. Dr. H. Haeuseler Tag der mündlichen Prüfung: 30.06.2005 urn:nbn:de:hbz:467-1058 Acknowledgements This work was completed during the time from June 2001 to May 2005 in the Inorganic Chemistry Department, University of Siegen under the guidance of Prof. Dr. H. J. Deiseroth. I would like to express my heartfelt gratitude to my supervisor Prof. Dr. H. J. Deiseroth for his elaborate guidance and unlimited enthusiasm. I would like to thank Dr. C. Reiner for our many fruitful discussions and SEM investigations and Dr. M. Schlosser for the single crystal measurements. I am also very gratefully to both Dipl. Chem. J. Schlirf and Dr. M. Aleksandrova for their assistance in carrying out the DTA and IR measurements. I would like to thank my colleagues Dipl. Chem. Michael Wagener, Dipl. Chem. Kledi Xhaxhiu and all the other members of the Inorganic Chemistry group of the University of Siegen, with whom I had the pleasure of working. I am especially pleased to acknowledge the assistance of Dipl. Ing. W. Büdenbender in the technical problems. I would like to thank Dr. R. K. Kremer from the Max – Planck – Institute for Solid State Research, Stuttgart for carrying out the magnetic measurements.
    [Show full text]
  • The Synthesis of Silicon–Germanium Alloy Nanocrystals
    UC Irvine UC Irvine Electronic Theses and Dissertations Title The Solution Synthesis of Group IV-Based Nanomaterials Permalink https://escholarship.org/uc/item/459547tt Author Cornell, Trevor Patrick Publication Date 2015 Peer reviewed|Thesis/dissertation eScholarship.org Powered by the California Digital Library University of California UNIVERSITY OF CALIFORNIA, IRVINE The Solution Synthesis of Group IV-Based Nanomaterials DISSERTATION submitted in partial satisfaction of the requirements for the degree of DOCTOR OF PHILOSOPHY in Chemistry by Trevor Patrick Cornell Dissertation Committee: Professor Allon I. Hochbaum, Chair Professor Matthew Law Professor Reginald Penner 2015 Chapter 4 © 2012 American Chemical Society Portions of Chapter 5 © 2010 American Chemical Society All other sections © 2015 Trevor Patrick Cornell DEDICATION To my family and friends, Thank you for your unending support and for being the reason why taking the hard road is worth it. “A riddle everyone knows the answer to is worthless.” -Batman iii TABLE OF CONTENTS LIST OF FIGURES vi LIST OF SCHEMES ix LIST OF TABLES x ACKNOWLEDGMENTS xi CURRICULUM VITAE xii ABSTRACT OF THE DISSERTATION xiv CHAPTER 1: An Introduction to Nanomaterials and Their Applications for Thermoelectrics 1 Introduction 1 World Energy Consumption 3 The Principles of Thermoelectric Materials 4 Current Materials 9 Modern Strategies for Improving Thermoelectric Performance 11 Thesis Objectives 17 References 20 CHAPTER 2: The Synthesis of Silicon–Germanium Alloy Nanocrystals 23 Introduction 23 The
    [Show full text]
  • Phase Evolution in Manganese-Germanium System During Mechanical Alloying by Vamsi Madhukar Meka a Thesis Submitted in Partial Fu
    Phase Evolution in Manganese-Germanium System During Mechanical Alloying by Vamsi Madhukar Meka A thesis submitted in partial fulfillment of the requirements for the degree of Master of Science in Engineering (Mechanical Engineering) in the University of Michigan–Dearborn 2017 Master Thesis Committee: Assistant Professor Tanjore V. Jayaraman, Chair Professor Pravansu Mohanty Associate Professor German Reyes-Villanueva ACKNOWLEDGEMENTS I would like to extend my deepest gratitude towards my thesis advisor, Prof. Tanjore V. Jayaraman, for his continual support, encouragement, and expert guidance throughout the research work. This opportunity to work with him has enhanced my technical, ethical, and soft skills. I would also like to thank Prof. Pravansu Mohanty and Prof. German Reyes-Villanueva for sparing their time to evaluate my thesis and for being a part of the thesis committee. I would like to thank the Mechanical Engineering Department, College of Engineering and Computer Science at the University of Michigan in Dearborn for their support in completing my thesis and the Department of Material Science and Engineering at The University of Michigan at Ann Arbor for providing access to some of their equipment. I would also like to thank Tim Chambers, Chris Cristian, Ying Qi, and Erik Kirk for their assistance with equipment and safety training and, special thanks to Cory Sayle from Ann Arbor for opening the laboratory door every time we were early. Lastly, I would like to thank my family Mr. Vijaya Bhaskar Meka, Ms. Naga Mani Meka, Ms. Pranathi, friends, and the close ones for supporting me throughout this journey. ii ABSTRACT In this thesis work, the phase evolution during the synthesis of metastable binary germanides of Mn-Ge system was investigated.
    [Show full text]
  • Synthesis and Characterization of Magnetic Nanowires Prepared by Chemical Vapor Deposition
    University of Tennessee, Knoxville TRACE: Tennessee Research and Creative Exchange Doctoral Dissertations Graduate School 5-2014 Synthesis and Characterization of Magnetic Nanowires Prepared by Chemical Vapor Deposition Siwei Tang University of Tennessee - Knoxville, [email protected] Follow this and additional works at: https://trace.tennessee.edu/utk_graddiss Part of the Condensed Matter Physics Commons, and the Other Materials Science and Engineering Commons Recommended Citation Tang, Siwei, "Synthesis and Characterization of Magnetic Nanowires Prepared by Chemical Vapor Deposition. " PhD diss., University of Tennessee, 2014. https://trace.tennessee.edu/utk_graddiss/2777 This Dissertation is brought to you for free and open access by the Graduate School at TRACE: Tennessee Research and Creative Exchange. It has been accepted for inclusion in Doctoral Dissertations by an authorized administrator of TRACE: Tennessee Research and Creative Exchange. For more information, please contact [email protected]. To the Graduate Council: I am submitting herewith a dissertation written by Siwei Tang entitled "Synthesis and Characterization of Magnetic Nanowires Prepared by Chemical Vapor Deposition." I have examined the final electronic copy of this dissertation for form and content and recommend that it be accepted in partial fulfillment of the equirr ements for the degree of Doctor of Philosophy, with a major in Materials Science and Engineering. David G Mandrus, Major Professor We have read this dissertation and recommend its acceptance: Zheng Gai, David C Joy, Bin Hu Accepted for the Council: Carolyn R. Hodges Vice Provost and Dean of the Graduate School (Original signatures are on file with official studentecor r ds.) Synthesis and Characterization of Magnetic Nanowires Prepared by Chemical Vapor Deposition A Dissertation Presented for the Doctor of Philosophy Degree The University of Tennessee, Knoxville Siwei Tang May 2014 DEDICATION To my wife, my parents, my parents in law and my daughter ii ACKNOWLEDGEMENTS First, I would like to thank my mentors and advisors Dr.
    [Show full text]