DielectricDielectric andand magneticmagnetic birefringencebirefringence inin ZnZn1-x1-xMnMnxxSeSe M. F. Saenger1,2,*, D. J. Sellmyer2, R. D. Kirby2, T. Hofmann1,2, and M. Schubert1,2 1 Department of Electrical Engineering, University of Nebraska-Lincoln, 68588, U.S.A. ellipsometry.unl.edu 2 Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, USA *
[email protected] Introduction Results Experiment Interaction between long wavelength electromagnetic σ σ incident reflected radiation and bound and unbound electrical charge x = 0.00 x = 0.14 + − coil coil Formation of wurtzite planes normal Γ |+1/2> light light carriers subjected to an external magnetic field causes The underlying mechanism of the giant Faraday 6 |-1/2> to the [111] direction causes optical birefringence precisely measurable using effect is the interaction between the spin of the [111] dielectric birefringence in dependance localized 3d5-electrons of the Mn ions and the m Ф generalized ellipsometry. ZnSe is an important II-VI of J mirror band electrons. When µ0H ≠ 0, the conduction semiconductor with a variety of applications in |-1/2> µ H the Mn concentration x. At x = 0.3 a and valence bands split, which is known as 0 θ optoelectronic devices. phase transformation from the |-1/2> sp-d exchange. Γ8 sphalerite to the wurtzite structure |+1/2> sample Litvinov |+1/2> x [110] occurs. 2007 ZnSe oxide 10 nm Zn Mn Se ... 1-x x Zn1-xMnxSe Zn, Mn Se Optical detection and quantification of anisotropy GaAs (001) bulk MO birefringence possesses a temperature dependent magnetic 0.04 M /M x = 0.28 23 11 x moment as well as remarkable magnetooptic (MO) Mn M13 spectra for •Change due to the sp-d properties, which in conjunction with the two different 0.28 0.03 interaction.