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New Minerals Approved Bythe Ima Commission on New
NEW MINERALS APPROVED BY THE IMA COMMISSION ON NEW MINERALS AND MINERAL NAMES ALLABOGDANITE, (Fe,Ni)l Allabogdanite, a mineral dimorphous with barringerite, was discovered in the Onello iron meteorite (Ni-rich ataxite) found in 1997 in the alluvium of the Bol'shoy Dolguchan River, a tributary of the Onello River, Aldan River basin, South Yakutia (Republic of Sakha- Yakutia), Russia. The mineral occurs as light straw-yellow, with strong metallic luster, lamellar crystals up to 0.0 I x 0.1 x 0.4 rnrn, typically twinned, in plessite. Associated minerals are nickel phosphide, schreibersite, awaruite and graphite (Britvin e.a., 2002b). Name: in honour of Alia Nikolaevna BOG DAN OVA (1947-2004), Russian crys- tallographer, for her contribution to the study of new minerals; Geological Institute of Kola Science Center of Russian Academy of Sciences, Apatity. fMA No.: 2000-038. TS: PU 1/18632. ALLOCHALCOSELITE, Cu+Cu~+PbOZ(Se03)P5 Allochalcoselite was found in the fumarole products of the Second cinder cone, Northern Breakthrought of the Tolbachik Main Fracture Eruption (1975-1976), Tolbachik Volcano, Kamchatka, Russia. It occurs as transparent dark brown pris- matic crystals up to 0.1 mm long. Associated minerals are cotunnite, sofiite, ilin- skite, georgbokiite and burn site (Vergasova e.a., 2005). Name: for the chemical composition: presence of selenium and different oxidation states of copper, from the Greek aA.Ao~(different) and xaAxo~ (copper). fMA No.: 2004-025. TS: no reliable information. ALSAKHAROVITE-Zn, NaSrKZn(Ti,Nb)JSi401ZJz(0,OH)4·7HzO photo 1 Labuntsovite group Alsakharovite-Zn was discovered in the Pegmatite #45, Lepkhe-Nel'm MI. -
LTS Research Laboratories, Inc. Safety Data Sheet Rhenium Sulfide ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– 1
LTS Research Laboratories, Inc. Safety Data Sheet Rhenium Sulfide ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– 1. Product and Company Identification ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Trade Name: Rhenium Sulfide Chemical Formula: ReS2 Recommended Use: Scientific research and development Manufacturer/Supplier: LTS Research Laboratories, Inc. Street: 37 Ramland Road City: Orangeburg State: New York Zip Code: 10962 Country: USA Tel #: 855-587-2436 / 855-lts-chem 24-Hour Emergency Contact: 800-424-9300 (US & Canada) +1-703-527-3887 (International) ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– 2. Hazards Identification ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Signal Word: None Hazard Statements: None Precautionary Statements: None HMIS Health Ratings (0-4): Health: 1 Flammability: 0 Physical: 1 ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– 3. Composition ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Chemical Family: Ceramic Additional Names: Rhenium (IV) sulfide, Rhenium disulfide Rhenium Sulfide (ReS2): Percentage: 100 wt% CAS #: 12038-63-0 EC #: 234-873-3 ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– 4. First Aid Procedures ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– -
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IJE TRANSACTIONS A: Basics Vol. 34, No. 4, (April 2021) 1052-1065 International Journal of Engineering Journal Homepage: www.ije.ir Exploration of Rhenium Volcanogenic Deposit and Technology Development Rylnikova M. V.a, Argimbaev K. R.*b, Ligotsky D. N.b a Research Institute of Comprehensive Exploitation of Mineral Resources of the Russian Academy of Sciences, Moscow, Russia Federation b Faculty of Mining, Saint Petersburg Mining University, St. Petersburg, Russia Federation P A P E R I N F O ABSTRACT Paper history: Rhenium is widely used in manufacturing industry and metallurgy. Today the consumption of rhenium Received 30 November 2020 is high, but there are very few deposits in the world where it is mined. Thus, the aim of the study is to Received in revised form 30 December 2020 identify areas of distribution of rhenium on Kudryavy volcano, located on the islands of the Kuril ridge Accepted 15 January 2021 (Russia). In this connection, during the field period, we took samples of a volcanic massif weighing 70 kg, and also studied the geothermal fields with a pyrometer. Laboratory research included the study of Keywords: composition of samples by the method of inductively coupled plasma mass spectrometry and Rhenium spectrometric analysis. The article defines the zones of distribution of rhenium mineralization, presents Volcanogenic Deposit the results of measurements of the temperature of geothermal fields and the elemental composition of Scoop Conveyor technological samples. The geology, development technology is described, the analysis of the Geothermal Fields destruction of rocks, determined by the acoustic method, the specific resistance of breakdown during electrothermal loosening is given. -
The Pennsylvania State University
The Pennsylvania State University The Graduate School SYNTHESIS AND CHARACTERIZATION OF TWO-DIMENSIONAL MATERIALS FOR BEYOND COMPLEMENTARY METAL OXIDE SEMICONDUCTOR TECHNOLOGY A Dissertation in Materials Science and Engineering by Rui Zhao © 2019 Rui Zhao Submitted in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy August 2019 ii The dissertation of Rui Zhao was reviewed and approved* by the following: Joshua A. Robinson Associate Professor of Materials Science and Engineering Dissertation Advisor Chair of Committee Mauricio Terrones Distinguished Professor of Physics, Chemistry, and Materials Science and Engineering Roman Engel-Herbert Associate Professor of Materials Science and Engineering, Chemistry and Physics Saptarshi Das Assistant Professor of Engineering, Science & Mechanics John Mauro Professor of Materials Science and Engineering Chair, Intercollege Graduate Degree Program Associate Head for Graduate Education, Materials Science and Engineering *Signatures are on file in the Graduate School iii ABSTRACT Rapid development in Semiconductor research has brought excitement and challenges. New materials have pushed both academic and industry progress forward at a fast pace. Since the discovery of one-atomic layer of graphene in 2004, tremendous efforts have been devoted to pushing its properties to meet the technology demands, establish metrics and help accomplish milestones. The family of two-dimensional materials continue to expand. Transition metal dichalcogenides (TMDs) help compensate for the zero-bandgap of graphene and greatly increase the opportunities for their applications in electronics, optoelectronics, bioelectronics and medical- related applications. To enable electronic chips with higher density and faster processing/switching speeds and address technology bottlenecks, new correlated or functionalized two-dimensional materials are being positioned under the research spotlight. -
Technetium Sulfide: Fundamental Chemistry for Waste Storage Form's
UNLV Theses, Dissertations, Professional Papers, and Capstones 12-1-2014 Technetium Sulfide: undamentalF Chemistry for Waste Storage Form's Application Maryline Ghislaine Ferrier University of Nevada, Las Vegas Follow this and additional works at: https://digitalscholarship.unlv.edu/thesesdissertations Part of the Radiochemistry Commons Repository Citation Ferrier, Maryline Ghislaine, "Technetium Sulfide: undamentalF Chemistry for Waste Storage Form's Application" (2014). UNLV Theses, Dissertations, Professional Papers, and Capstones. 2259. http://dx.doi.org/10.34917/7048578 This Dissertation is protected by copyright and/or related rights. It has been brought to you by Digital Scholarship@UNLV with permission from the rights-holder(s). You are free to use this Dissertation in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s) directly, unless additional rights are indicated by a Creative Commons license in the record and/or on the work itself. This Dissertation has been accepted for inclusion in UNLV Theses, Dissertations, Professional Papers, and Capstones by an authorized administrator of Digital Scholarship@UNLV. For more information, please contact [email protected]. TECHNETIUM SULFIDE: FUNDAMENTAL CHEMISTRY FOR WASTE STORAGE FORM’S APPLICATION By Maryline Ferrier Bachelor of Science in Chemistry Institut National des Sciences Appliquées de Rouen, France 2006 Master of Science in Chemistry Institut National -
Abstract Book
Monday Morning, October 22, 2018 2D Materials Focus Topic 9:00am 2D+EM+MI+NS+TF-MoM-3 Crystal Growth of 2D Materials: From Room 201B - Session 2D+EM+MI+NS+TF-MoM Model Systems to Integrated Manufacturing, Stephan Hofmann, University of Cambridge, UK INVITED 2D Materials Growth and Fabrication In order to serve the industrial demand for “electronic-grade” 2D materials, Moderator: Jing Xia, University of California Irvine we focus on chemical vapour deposition (CVD), and in this talk I will review 8:20am 2D+EM+MI+NS+TF-MoM-1 Wafer Scale Epitaxial Growth of our recent progress in scalable CVD [1] and device integration approaches Monolayer and Few-Layer WS2 by Gas Source Chemical Vapor Deposition, of highly crystalline graphene, hexagonal boron nitride (h-BN) and Mikhail Chubarov, T Choudhury, J Redwing, The Pennsylvania State transition metal dichalcogenide films. The systematic use of in-situ University metrology, ranging from high-pressure XPS to environmental electron microscopy, allows us to reveal some of the key growth mechanisms for Tungsten disulfide (WS2) has been widely investigated due to its outstanding properties compared to other 2D TMD including a bandgap of these 2D materials that dictate crystal phase, micro-structure, defects, and 2 eV, relatively high theoretical electron mobility, valley spin polarization, heterogeneous integration control at industrially relevant conditions [2,3]. I among others. Commonly, the films are grown on amorphous substrates will focus on tailored CVD processes to achieve large monolayer h-BN domains with lateral sizes exceeding 0.5 mm. Importantly we show that like SiO2 and, consequently, consist of high angle grain boundaries after coalescence due to the random orientation of domains. -
European Patent Office
s\ — IIINMNIIIINIIIINIIIIIIIII OJII Eur°Pean Patent Office <*S Office europeen des brevets (11) EP 0 942 006 A2 (12) EUROPEAN PATENT APPLICATION (43) Date of publication: (51) int. CI.6: C08F 4/602, C08F 4/606, 15.09.1999 Bulletin 1999/37 C08F 10/00 (21) Application number: 99301730.0 (22) Date of filing: 08.03.1999 (84) Designated Contracting States: (72) Inventors: AT BE CH CY DE DK ES Fl FR GB GR IE IT LI LU • Yamada, Satoru MC NL PT SE Mie-gun, Mie (JP) Designated Extension States: • Yano, Akihiro AL LT LV MK RO SI Yokkaichi-shi, Mie (JP) (30) Priority: 09.03.1998 J P 5658598 (74) Representative: 1 1 .01 .1 999 JP 380399 Kearney, Kevin David Nicholas et al KILBURN & STRODE (71 ) Applicant: TOSOH CORPORATION 20 Red Lion Street Shinnanyo-shi, Yamaguchi-ken (JP) London, WC1 R 4PJ (GB) (54) Catalyst for olefin polymer production and process for olefin polymer production employing the catalyst (57) A novel catalyst for olefin polymerization is pro- vided which comprises [A] a metallocene compound containing a transition metal selected from Groups 3, 4, 5, and 6 of Periodic Table, [B] a reaction product of topotactic reduction by electron transfer, and [C] an organoaluminum compound. The catalyst may contain additionally [D] an organoalkaline earth metal com- pound or an organozinc compound. This catalyst has high catalytic activity for olefin polymerization without employing an expensive catalyst component. CM < CO o o CM <7> O Q_ LU Printed by Xerox (UK) Business Services 2.16.7/3.6 EP 0 942 006 A2 Description Background of the Invention: 5 Field of the Invention: [0001 ] The present invention relates to a catalyst for olefin polymer production comprising a metallocene compound, a reaction product of topotactic reduction by electron transfer, and an organoaluminum compound, and a process for producing an olefin polymer employing the catalyst. -
Chemical Vapour Deposition of Rhenium Disulfide and Rhenium-Doped Molybdenum Disulfide Thin Cite This: J
Journal of Materials Chemistry C View Article Online PAPER View Journal | View Issue Chemical vapour deposition of rhenium disulfide and rhenium-doped molybdenum disulfide thin Cite this: J. Mater. Chem. C, 2016, 4,2312 films using single-source precursors† Naktal Al-Dulaimi,a David J. Lewis,ab Xiang Li Zhong,b M. Azad Malikb and Paul O’Brien*ab Polycrystalline thin films of rhenium disulfide (ReS2) and the alloys Mo1ÀxRexS2 (0 r x r 0.06) have been i i deposited by aerosol-assisted chemical vapour deposition (AA-CVD) using [Re(m-S Pr)3(S Pr)6](1)and [Mo(S2CNEt2)4](2) in different molar ratios at 475 1C. The deposited films were characterised by p-XRD, SEM, and ICP-OE, Raman, and EDX spectroscopies. The p-XRD patterns of the films deposited from (1) correspond to ReS2 (x = 1) and those deposited from (2) matched to MoS2 (x = 0). Re-doping of up to 6% Received 1st February 2016, was achieved in MoS2 thin films by using different concentrations of precursor (1), the morphology of the Accepted 25th February 2016 doped films changed from lamellar for pure MoS2 to clusters at 6 mol% alloying with rhenium. The films Creative Commons Attribution 3.0 Unported Licence. DOI: 10.1039/c6tc00489j are promising candidates as models for the incorporation of technetium into transition metal dichalcogenides as a means of immobilisation in nuclear waste processing. Exfoliation of these films is www.rsc.org/MaterialsC also a potential route towards modification of the optoelectronic properties of 2D molybdenite. Introduction have recently developed a general approach to doping MoS2 with transition metal cations such as chromium based on AA-CVD.21,22 Two-dimensional transition metal dichalcogenides (TMDCs) Rhenium disulfide (ReS2) has a direct bandgap which remains This article is licensed under a which have the general formula MX2, including molybdenum as such in the monolayer form unlike most other TMDCs. -
Chemical Vapour Deposition of Rhenium Disulfide and Rhenium-Doped Molybdenum Disulfide Thin Cite This: J
Journal of Materials Chemistry C View Article Online PAPER View Journal | View Issue Chemical vapour deposition of rhenium disulfide and rhenium-doped molybdenum disulfide thin Cite this: J. Mater. Chem. C, 2016, 4,2312 films using single-source precursors† Naktal Al-Dulaimi,a David J. Lewis,ab Xiang Li Zhong,b M. Azad Malikb and Paul O’Brien*ab Polycrystalline thin films of rhenium disulfide (ReS2) and the alloys Mo1ÀxRexS2 (0 r x r 0.06) have been i i deposited by aerosol-assisted chemical vapour deposition (AA-CVD) using [Re(m-S Pr)3(S Pr)6](1)and [Mo(S2CNEt2)4](2) in different molar ratios at 475 1C. The deposited films were characterised by p-XRD, SEM, and ICP-OE, Raman, and EDX spectroscopies. The p-XRD patterns of the films deposited from (1) correspond to ReS2 (x = 1) and those deposited from (2) matched to MoS2 (x = 0). Re-doping of up to 6% Received 1st February 2016, was achieved in MoS2 thin films by using different concentrations of precursor (1), the morphology of the Accepted 25th February 2016 doped films changed from lamellar for pure MoS2 to clusters at 6 mol% alloying with rhenium. The films Creative Commons Attribution 3.0 Unported Licence. DOI: 10.1039/c6tc00489j are promising candidates as models for the incorporation of technetium into transition metal dichalcogenides as a means of immobilisation in nuclear waste processing. Exfoliation of these films is www.rsc.org/MaterialsC also a potential route towards modification of the optoelectronic properties of 2D molybdenite. Introduction have recently developed a general approach to doping MoS2 with transition metal cations such as chromium based on AA-CVD.21,22 Two-dimensional transition metal dichalcogenides (TMDCs) Rhenium disulfide (ReS2) has a direct bandgap which remains This article is licensed under a which have the general formula MX2, including molybdenum as such in the monolayer form unlike most other TMDCs.