US005630904A United States Patent 19 11 Patent Number: 5,630,904 Aoyama et al. 45 Date of Patent: May 20, 1997

54 STRIPPING AND CLEANINGAGENT FOR 5,244,539 9/1993 McGrath et al...... 252/79.2 X REMOVING DRYETCHING AND 5,378,312 1/1995 Gifford et al...... 156/643.1 PHOTORESST RESIDUES FROMA SEMICONDUCTOR SUBSTRATE, ANDA Primary Examiner. Thi Dang METHOD FOR FORMING ALINE PATTERN Attorney, Agent, or Firm-Sughrue, Mion, Zinn, Macpeak & USING THE STRIPPING AND CLEANING Seas AGENT (57) ABSTRACT 75 Inventors: Tetsuo Aoyama; Rieko Nakano, both Stripping and cleaning agent for removing dry-etching pho of Niigata; Akira Ishihama; Koichiro toresist residues, and a method for forming an aluminum Adachi, both of Nara, all of Japan based line pattern using the stripping and cleaning agent. The stripping and cleaning agent contains (a) from 5 to 50% 73) Assignees: Mitsubishi Gas Chemical Co., Inc., by weight of an organocarboxlic ammonium salt oranamine Tokyo; Sharp Kabushiki Kaisha, carboxylate, represented by the formula (RimCOONH Osaka, both of Japan (R)q)n, where R' is hydrogen, or an alkyl or aryl group having from 1 to 18 carbon atoms; R is hydrogen, or an (21) Appl. No.: 410,726 alkyl group having from 1 to 4 carbon atoms; m and in (22 Filed: Mar 27, 1995 independently are integers offrom 1 to 4, pisinteger of from 1 to 4, q is integer of from 1 to 3, and phq=4 and (b) from 30 Foreign Application Priority Data 0.5 to 15% by weight of afluorine compound. The inventive method is advantageously applied to treating a dry-etched Mar. 28, 1994 JPl Japan ...... 6-082.518 semiconductor substrate with the stripping and cleaning (51 int. Cla.m. C09K 13/00 agent. The semiconductor substrate comprises a semicon 52 U.S. Cl...... 438/669; 252/79.1; 134/2; ductor wafer having thereon a conductive layer containing 438/963; 438/704 aluminum. The conductive layer is dry-etched through a 58) Field of Search ...... 156/646.1, 643.1, patterned photoresist mask to form a wiring body having 156/656.1; 252/79.1, 792, 79.3, 79.4; 134/2, etched side walls. The dry etching forms a side wall pro 3 tection film on the side walls. In accordance with the inventive method, the side wall protection film and other 56 References Cited resist residues are completely released without corroding the wiring body. U.S. PATENT DOCUMENTS 5,174,816 12/1992 Aoyama et al...... 106/203 19 Claims, 1 Drawing Sheet U.S. Patent May 20, 1997 5,630,904

FG.3 5,630,904 1. 2 STRIPPING AND CLEANINGAGENT FOR cleaning agent, an acidic stripping and cleaning agent and an REMOVING DRYETCHING AND alkaline stripping and cleaning agent. However, it is difficult PHOTORESST RESDUES FROMA to completely release the side wall protection film by using SEMICONDUCTOR SUBSTRATE, ANDA these stripping and cleaning agents. Furthermore, in the case METHOD FOR FORMING A LINE PATTERN of an organic stripping and cleaning agent, high temperature USING THE STRIPPING AND CLEANING heating is necessary and an organic solvent, such as AGENT isopropanol, etc., is necessary as a rinse liquid. Thus, this technique is complicated and also presents a safety problem. In the case of an acidic and an alkaline stripping and BACKGROUND OF THE INVENTION 10 cleaning agent, the aluminum alloy layer tends to corrode. 1. Field of the Invention Thus, these stripping and cleaning agents cannot be used to The present invention is directed to a method for surface process an extremely fine line pattern. treatment of a semiconductor substrate. More particularly, Therefore, there is a need in the art for a stripping and the present invention is directed to a stripping and cleaning cleaning agent and a method for forming a line pattern using agent for removing dry-etching photoresist residues, and a 15 such a liquid to completely release the side wall protection method for forming an aluminum based line pattern char film, which stripping and cleaning agent does not corrode a acterized in that a side wall protection film formed in a wiring body comprising aluminum. dry-etching step is removed from the semiconductor sub Strate. SUMMARY OF THE INVENTION 20 2. Description of the Related Art The present invention solves the above-described prob lems of the prior art, and provides a resist stripping and Recently, in an aluminum wiring technique in which a cleaning agent and method for forming an ultra fine line logic LSI or memory KSI is formed on a semiconductor pattern using the stripping and cleaning agent, without wafer comprising a silicon single crystal, electro-migration corroding the aluminum wiring body. Also, the side wall and stress migration, etc., occur withincreased density of the 25 protection filmis safely, efficiently and completely removed. integrated circuit. These migrations are inhibited by using an The present inventors have extensively studied the above aluminum alloy (Al-Si-Cu etc.) as a wire material con described problems, and as a result, have found that the taining a small amount of Cu, etc. above objectives are achieved by providing a semiconductor The process for making a wiring body from an aluminum substrate comprising a semiconductor wafer having thereon alloy is as follows: 30 a conductive layer containing aluminum, dry etching the First, (1) a film or layer of the above-described Al-Si conductive layer through a patterned photoresist mask to Cu alloy is sputtered onto a semiconductor wafer having forma wiring body having etched side walls and a side wall thereon a diffusing layer and an electrical insulating layer. protection film on said side walls; and removing the side Next, (2) aresistfilm or layeris applied onto the Al-Si wall protection film by treating the dry-etched semiconduc Cu layer. Then, a fine pattern is formed thereon using a 35 tor substrate with a stripping and cleaning agent comprising: photolithographic technique. (a) an organocarboxlic ammonium salt or amine Then, (3) the resist film is cured by irradiating the entire carboxylate, and (b) an aqueous solution of a fluorine area of the semiconductor substrate with UV light, to compound. thereby increase the dry-etching resistance of the resist In a preferred embodiment, the stripping and cleaning pattern. agent further comprises an organic solvent selected from the Furthermore, the above-described Al-Si-Cu alloy layer group consisting of amides, lactones, nitriles, alcohols and is dry-etched using the resist pattern as a mask to formaline esters. The stripping and cleaning agent of the present pattern. invention does not corrode the aluminum wiring body. Also, In this process, a chlorine containing gas, such as BC 45 the side wall protection film formed during the dry-etching Cl2, etc., or a gas further containing a Freon series gas, such Step is completely removed, to thereby obtain an ultra fine as CF and CHF etc., is usually used as a dry-etching gas. line pattern. Aside wall protection film which is a reaction product of the etching step becomes attached on the side wall of the pattern BRIEF DESCRIPTION OF THE DRAWINGS of the resist film and the Al-Si-Cu alloy layer. On the 50 FIG. 1 is a first example of a cross-sectional view of a other hand, the chlorine gas used in the dry etching step semiconductor substrate after dry etching. reacts with aluminum in the wiring body to form a FIG. 2 is a cross-sectional view of the semiconductor compound, such as aluminum chloride, in the side wall substrate of FIG. 1 after dry etching and removing the protection film. The aluminum chloride reacts with water in photoresist masking pattern. the air to form hydrogen chloride. The hydrogen chloride 55 FIG. 3 is a second example of a cross-sectional view of a corrodes the Al-Si-Cu alloy and this causes the wire to semiconductor substrate after dry etching. Snap. This type of corrosion is described in Monthly SEMI CON NEWS, October 1988, at page 44. To prevent such DESCRIPTION OF THE PREFERRED corrosion, methods comprising heating the wafer after the EMBODIMENTS etching step, or using purified water for cleaning, etc., have The present invention is described in more detail below. been proposed. However, good results are not obtained from The ammonium salt of an organocarboxylic acid or the these methods. Namely, to prevent the above-described amine salt of an organocarboxylic acid of the present inven corrosion, the side wall protection film should be completely tion is represented by the following formula: removed. Methods that have been proposed for removing the side 65 (RICOONHCR), wall protection film usually include the use of a wet strip where R' is hydrogen, or an alkyl or aryl group having from ping and cleaning agent, such as an organic stripping and 1 to 18 carbon atoms; R is hydrogen, or an alkyl group 5,630,904 3 4 having from 1 to 4 carbon atoms; m and nindependently are gen bromide and borontrichloride. The dry-etching gas may integers of from 1 to 4, pis integer of from 1 to 4, q is integer further include a fluorine-containing gas, such as carbon of 1 to 3, and phq=4. tetrafluoride, sulfur hexafluoride, boron trifluoride, etc.; and The ammonium salt of an organocarboxylic acid of the a chlorine-containing gas, such as hydrogen chloride, carbon present invention includes, for example, ammonium com tetrachloride and silicon tetrachloride. pounds of an aliphatic carboxylic acid, such as ammonium formate, ammonium acetate, ammonium propionate, ammo In accordance with the present invention, the removing nium butyrate, ammonium valerate, ammonium heptanate, step may be conducted at a temperature around room ammonium laurate, ammonium palmitate, ammonium temperature. However, if the removing step is difficult to stearate, ammonium acrylate, ammonium crotonate, ammo carry out at the room temperature, then the removing step nium methacrylate, ammonium oxalate, ammonium 10 may be conducted at an elevated temperature. The time malonate, ammonium maleate, ammonium fumarate, needed to carry out the method of the present invention is ammonium succinate, ammonium adipate, ammonium not particularly limited. The processing time can be selected azelate, ammonium sebacate; and in addition, ammonium depending on the condition of the side wall protection film, compounds of an aromatic carboxylic acid, such as ammo the composition of the aluminum series wiring body, etc. nium benzoate, ammonium toluate, ammonium phthalate, 15 Furthermore, because the stripping and cleaning agent of ammonium trimellitate and ammonium pyromellitate. the present invention can completely remove the resist resin The amine salt of an organocarboxylic acid of the present after ashing, and does not corrode the aluminum series invention includes, for example, the amine salt of an organic wiring body, the stripping and cleaning agent of this inven carboxylic acid, such as monomethylamine formate, dim tion can also be used as a microstripper in a washing step of ethylamine formate, trimethylamine formate, monoethy 20 aluminum based wiring. lamine formate, diethylamine formate, triethylamine The present invention is described in more detail by formate, monomethylamine acetate, dimethylamine acetate, reference to the following Examples, but the present inven trimethylamine acetate, monoethylamine acetate, diethy tion should not be construed as being limited thereto. lamine acetate, triethylamine acetate, monomethylamine benzoate, dimethylamine benzoate, trimethylamine 25 EXAMPLES benzoate, monoethylamine benzoate, diethylamine benzoate and triethylamine benzoate. Example 1 The organocarboxlic ammonium salt or amine carboxy FIG. 1 is a cross-sectional view of a first example of a late is preferably used in a concentration of from 5 to 50% semiconductor substrate 10 after dry-etching. 1 is a semi by weight of the stripping and cleaning agent. When the 30 conductor wafer which may be a silicon wafer, 2 is an concentration is less than 5% by weight, the aluminum oxidized film or oxide layer formed on the semiconductor wiring body corrodes excessively. When the concentration is wafer 1, 3 is an Al based wiring body or Al metallization greater than 50%, the removing ability of the side wall pattern formed on the oxide layer 2, 4 is a photoresist film protection film is decreased. or layer which is patterned using a photolithography tech Examples of the fluorine compound for use in the present 35 nique. The Al wiring body was formed by sputtering an Al invention include hydrofluoric acid, ammonium fluoride, alloy layer onto the oxide layer 2. Photoresist was then ammoniumhydrofluoride, ammonium borofluoride, etc. The coated onto the oxide layer, exposed and developed to form fluorine compound is used in a concentration of from 0.5 to a photoresist pattern. The patterned wafer was then dry 15% by weight of the stripping and cleaning agent. When the etched with a gas containing HBr using the photoresist concentration of the fluorine compound is less than 0.5% by 40 pattern as an etching mask, to thereby etch the exposed Al weight, the removing ability of the side wall protection film alloy (not shown in FIG. 1). At this stage, a residue com is decreased. When the concentration is greater than 15%, prising a photoresist residue and an etching residue (side the aluminum wiring body corrodes excessively. wall protection film) 5, attached to the side walls of the Al Examples of the organic solvent for use in the present wiring body 3 and the resist film 4. As shown in FIG. 2, the invention include, for example, amide, such as 45 resist film 4 was removed by a photoresist ashing method dimethylformamide, dimethylacetoamide, N-methyl pyr using an oxygen plasma. At this time, the residue 5 was not rolidone; nitrils, such as Y-butyrolactone; alcohols, such as removed by the oxygen plasma, and the upper part of the methanol, ethanol, isopropanol, ethyleneglycol, etc.; and residue (side wall protection film) was deformed as it esters, such as methyl acetate, ethyl acetate, etc. The organic opened away from the center of the Al wiring body 3. solvent is preferably used in a concentration of from 1 to 50 50% by weight of the stripping and cleaning agent. When the After conducting the resistashing as shown in FIG. 2, the concentration is less than 1% by weight, the aluminum substrate 10 having thereon residue (side wall protection wiring body corrodes excessively. When the concentration is film) 5 was immersed at 25°C. for 5 minutes in a stripping greater than 50%, the removing ability of the side wall and cleaning agent comprising 50% by weight ammonium protection film is decreased. 55 acetate, 5% by weight ammonium fluoride and the balance Furthermore, the total amount of the organocarboxlic water. After immersion, the wafer was rinsed with ultra pure ammonium salt or amine carboxylate and the organic sol water, dried, and then observed with an scanning electron ventis preferably used in a concentration of from 10 to 80% microscope (SEM). by weight of the stripping and cleaning agent. When either As a result, the side wall protection film.5 of the patterned the concentration of the organic solvent is small or the wiring body was completely removed, and no corrosion of organic solvent is not added, and at the same time the the aluminum wiring body was observed. Furthermore, concentration of both the organocarboxlic ammonium salt or resist residues in addition to the side wall protection film amine carboxylate is small, the aluminum wiring body were also completely removed. corrodes excessively, and the removing ability of the side Example 2 wall protection film is decreased. 65 The dry etching gas for use in the present invention The substrate 10 of Example 1 after ashing and having the comprises, for example, a gas selected from chlorine, hydro structure of FIG. 2 including the residue (side wall protec 5,630,904 S 6 tion film) 5 was immersed at 23° C. for 5 minutes in a in addition to the side wall protection film were also com stripping and cleaning agent comprising 40% by weight of pletely removed. the monomethyl amine salt of benzoic acid, 5% by weight ammonium borofluoride and the balance water. After the Example 6 immersion, the wafer was rinsed with deionized water, dried The substrate 10 of Example 1 after ashing and having the and then observed with a SEM. structure of FIG. 2 including the residue (side wall protec As a result, the side wall protection film.5 was completely tion film) 5 was immersed at 23° C. for 10 minutes in a removed, and no corrosion of the aluminum wiring body 3 stripping and cleaning agent comprising 30% by weight or oxide layer 2 was observed. Furthermore, resist residues ammonium phthalate, 3% by weight ammonium fluoride, in addition to the side wall protection film were also com 10 20% by weightN-methylpyrrollidone and the balance water. pletely removed. After the immersion, the wafer was rinsed with ultra pure water, dried, and then observed with a SEM. Example 3 As a result, the side wall protection film.5 was completely FIG. 3 shows a second example of a cross sectional view removed, and no corrosion of the aluminum wiring body 3 of a semiconductor substrate after dry-etching. 11 is a 15 and oxide layer 2 was observed. Furthermore, resist residues semiconductor wafer, 12 is an Al alloy layer or layerformed in addition to the side wall protection film were also com on the semiconductor wafer 11, 13 is an oxidized film or pletely removed. oxide layer formed on the Al alloy layer, 14 is a patterned Example 7 photoresist film or layer provided on the oxide layer. Using 20 the photoresistfilm 14 as a mask, dry-etching was conducted The substrate 10 of Example3 after ashing and having the using an etching gas containing HBr gas to form viahole 16. structure of FIG. 3 including the residue (side wall protec During the dry-etching, a residue (side wall protection film) tion film) 15 was immersed at 25° C. for 10 minutes in a 15 comprising a resist residue and a dry-etching residue stripping and cleaning agent comprising 40% by weight attached to the side walls of the viahole 16 and was not 25 trimethylamine acetate, 3% by weight ammonium fluoride, removed during a subsequent photoresist ashing step. The 7% by weight dimethyl formamide and the balance water. substrate having the remaining residue (side wall protection After the immersion, the wafer was rinsed with ultra pure film) 15 was immersed at 25° C. for 5 minutes in a stripping water, dried, and then observed with a SEM. and cleaning agent comprising 10% by weight ammonium As a result, the side wall protection film 15 was com acetate, 5% by weight ammonium fluoride, 40% by weight 30 pletely removed, and no corrosion of the aluminum alloy dimethyl formamide and the balance water. After the layer 12 or oxide layer 13 was observed. Furthermore, resist immersion, the wafer was rinsed with ultra pure water, dried, residues in addition to the side wall protection film were also and then observed with a SEM. completely removed. As a result, the side wall protection film 5 was completely removed, and no corrosion of the aluminum alloy layer 12 35 Comparative Example 1 and oxide layer 13 was observed. Furthermore, resist resi The substrate 10 of Example 1 after ashing and having the dues in addition to the side wall protection film were also structure of FIG. 2 including the residue (side wall protec completely removed. tion film) 5 was immersed at 25° C. for 5 minutes in a stripping and cleaning agent comprising 5% by weight Example 4 ammonium fluoride and the balance water. After the The substrate 10 of Example 1 after ashing and having the immersion, the wafer was rinsed with ultrapure water, dried, structure of FIG. 2 including the residue (side wall protec and then observed with a SEM. tion film) 5 was immersed at 20° C. for 5 minutes in a As a result, the side wall protection film.5 was completely stripping and cleaning agent comprising 0.8% by weight removed. However, there was extensive corrosion of the ammonium hydrogen fluoride, 10% by weight trimethyl 45 aluminum wiring body 3 and the oxide layer 2. amine formate, 40% by weight ethyleneglycol and the balance water. After the immersion, the wafer was rinsed Comparative Example 2 with ultra pure water, dried, and then observed with a SEM. The substrate 10 of Example 3 after ashing and having the As a result, the side wall protection film.5 was completely structure of FIG. 3 including the residue (side wall protec removed, and no corrosion of the aluminum wiring body 3 50 tion film) 15 was immersed at 25° C. for 10 minutes in a and oxide layer 2 was observed. Furthermore, resist residues stripping and cleaning agent comprising 10% by weight in addition to the side wall protection film were also com ammonium acetate, 40% by weight dimethylformamide and pletely removed. the balance water. After the immersion, the wafer was rinsed 55 with ultra pure water, dried, and then observed with a SEM. Example 5 As a result, the side wall protection film 15 was not The substrate 10 of Example 1 after ashing and having the removed to an appreciable extent. structure of FIG. 2 including the residue (side wall protec As described above, the stripping and cleaning agent and tion film) 5 was immersed at 23° C. for 10 minutes in a method of the present invention completely remove the side stripping and cleaning agent comprising 15% by weight wall protection film of an aluminum wiring body that has ammonium formate, 5% by weight ammonium fluoride, been patterned by dry-etching using a photoresist pattern as 30% by weight dimethyl acetoamide and the balance water. a mask without corrosion of the aluminum alloy layer and After the immersion, the wafer was rinsed with ultra pure underlying oxide layer. Furthermore, resist residues in addi water, dried, and then observed with a SEM. tion to the side wall protection film are also completely As a result, the side wall protection film.5 was completely 65 removed. removed, and no corrosion of the aluminum wiring body 3 While the invention has been described in detail and with and oxide layer 2 was observed. Furthermore, resist residues reference to specific embodiments thereof, it will be appar 5,630,904 7 8 ent to one skilled in the art that various changes and 9. The method of claim 1, wherein the organic solvent is modifications can be made therein without departing from selected from the group consisting of dimethylformamide, the spirit and scope thereof. dimethylacetoamide, N-methylpyrrollidone, Y-butyrolactone, What is claimed is: methanol, ethanol, isopropanol, ethyleneglycol, methyl 1. A method for forming a line pattern comprising: 5 acetate and ethyl acetate. providing a semiconductor substrate comprising a semi 10. The method of claim 1, wherein the organic solventis conductor wafer having thereon a conductive layer selected from the group consisting of dimethylformamide, containing aluminum; ethyleneglycol dimethylacetoamide and N-methyl pyrroli dry etching the conductive layer through a patterned done. photoresist mask to form a wiring body having etched 10 11. A stripping and cleaning agent for removing dry side walls and a side wall protection film on said side etching photoresist residues from a semiconductor substrate walls; and having thereon an aluminum based wiring body formed in a releasing the side wall protection film by treating the dry-etching step using a photoresist pattern as an etching dry-etched semiconductor substrate with a stripping mask, comprising: and cleaning agent comprising: (a) from 5 to 50% by weight of an organocarboxylic (a) from 5 to 50% by weight of an organocarboxylic 15 ammonium salt or an amine carboxylate, represented ammonium salt or an amine carboxylate, represented by the formula (R')m(COONHCR)gln, where R is by the formula (R'im(COONHCR)qin, where R' is hydrogen, or an alkyl or aryl group having from 1 to 18 hydrogen, or an alkyl or aryl group having from 1 to carbon atoms; R is hydrogen, or an alkyl group having 18 carbon atoms; R is hydrogen, or an alkyl group 20 from 1 to 4 carbon atoms; m and n independently are having from 1 to 4 carbon atoms; m and n indepen integers of from 1 to 4. p is an integer of from 1 to 4, dently are integers of from 1 to 4. p is an integer of q is an integer of from 1 to 3, and phq=4; and from 1 to 4, q is an integer offrom 1 to 3, and pq=4; (b) from 0.5 to 15% by weight of a fluorine compound. and 12. A stripping and cleaning agent for removing dry (b) from 0.5 to 15% by weight of a fluorine compound. is etching photoresist residues from a semiconductor substrate 2. The method of claim 1, wherein the stripping and having thereon an aluminum based wiring body formed in a cleaning agent further comprises (c) from 1 to 50% by dry-etching step using a photoresist pattern as an etching weight of at least one organic solvent selected from the mask, comprising: group consisting amides, lactones, nitriles, alcohols and (a) from 5 to 50% by weight of an organocarboxylic esters. 30 ammonium salt or an amine carboxylate, represented 3. The method of claim 1, wherein the dry-etching gas is by the formula (R')mCOONHCR)qin, where R' is selected from the group consisting of chlorine gas, hydrogen hydrogen, or an alkyl or aryl group having from 1 to 18 bromide gas and boron trichloride gas. carbon atoms; R is hydrogen, or an alkyl group having 4. The method of claim 1, wherein the organocarboxylic from 1 to 4 carbon atoms; m and n independently are ammonium salt is selected from the group consisting of 35 integers of from 1 to 4. p is an integer of from 1 to 4, ammonium formate, ammonium acetate, ammonium q is an integer of from 1 to 3, and phq=4; propionate, ammonium butyrate, ammonium valerate, (b) from 0.5 to 15% by weight of a fluorine compound; ammonium heptanate, ammonium laurate, ammonium and palmitate, ammonium stearate, ammonium acrylate, ammo (c) from 1 to 50% by weight of at least one organic solvent nium crotonate, ammonium methacrylate, ammonium 40 selected from the group consisting amides, lactones, oxalate, ammonium malonate, ammonium maleate, ammo nitriles, alcohols and esters. nium fumarate, ammonium succinate, ammonium adipate, 13. The stripping and cleaning agent of claim 11 or 12, ammonium azelate, ammonium sebacate, ammonium wherein component (a) is said organocarboxylic ammonium benzoate, ammonium toluate, ammonium phthalate, ammo salt and said salt is selected from the group consisting of nium trimelitate and ammonium pyromellitate. 45 ammonium formate, ammonium acetate, ammonium 5. The method of claim 1, wherein the organocarboxylic propionate, ammonium butyrate, ammonium valerate, amine salt is selected from the group consisting of monom ammonium heptanate, ammonium laurate, ammonium ethylamine formate, dimethylamine formate, trimethy palmitate, ammonium stearate, ammonium acrylate, ammo lamine formate, monoethylamine formate, diethylamine nium crotonate, ammonium methacrylate, ammonium formate, triethylamine formate, monoethylamine acetate, 50 oxalate, ammonium malonate, ammonium maleate, ammo dimethylamine acetate, trimethylamine acetate, monoethy nium fumarate, ammonium succinate, ammonium adipate, lamine acetate, diethylamine acetate, triethylamine acetate, ammonium azelate, ammonium sebacate, ammonium monomethylamine benzoate, dimethylamine benzoate, tri benzoate, ammonium toluate, ammonium phthalate, ammo methylamine benzoate, monoethylamine benzoate, diethy nium trimellitate and ammonium pyromellitate. lamine benzoate and triethylamine benzoate. 55 14. The stripping and cleaning agent of claim 11 or 12, 6. The method of claim 1, wherein the organocarboxylic wherein component (a) is said organocarboxylic amine salt ammonium salt is selected from the group consisting of and said salt is selected from the group consisting of ammonium acetate, ammonium propionate, ammonium monomethylamine formate, dimethylamine formate, trim phthalate and ammonium formate. ethylamine formate, monoethylamine formate, diethylamine 7. The method of claim 1, wherein the organocarboxylic formate, triethylamine formate, monoethylamine acetate, amine salt is selected from the group consisting of monom dimethylamine acetate, trimethylamine acetate, monoethy ethylamine formate, triethylamine formate and monomethy lamine acetate, diethylamine acetate, triethylamine acetate, lamine benzoate. monomethylamine benzoate, dimethylamine benzoate, tri 8. The method of claim 1, wherein the fluorine compound methylamine benzoate, monoethylamine benzoate, diethy is selected from the group consisting of hydrofluoric acid, lamine benzoate and triethylamine benzoate. ammonium fluoride, ammonium hydrofluoride and ammo 15. The stripping and cleaning agent of claim 11 or 12, nium borofluoride. wherein component (a) is said organocarboxylic ammonium 5,630,904 9 10 Salt and said salt is selected from the group consisting of 18. The stripping and cleaning agent of claim 11 or 12, ammonium acetate, ammonium propionate, ammonium wherein the organic solvent is selected from the group phthalate and ammonium formate. consisting of dimethylformamide, dimethylacetoamide, 16. The stripping and cleaning agent of claim 11 or 12, N-methylpyrrolidone, Y-butyrolactone, methanol, ethanol, wherein component (a) is said organocarboxylic amine salt 5 isopropanol, ethyleneglycol, methyl acetate and ethyl and said salt is selected from the group consisting of acetate, monomethylamine formate, triethylamine formate and 19. The stripping and cleaning agent of claim 11 or 12, monomethylamine benzoate. wherein the organic solvent is selected from the group 17. The stripping and cleaning agent of claim 11 or 12, consisting of dimethylformamide, ethyleneglycol dimethy wherein the fluorine compound is selected from the group 10 lacetoamide and N-methyl pyrrolidone. consisting of hydrofluoric acid, ammonium fluoride, ammo nium hydrofluoride and ammonium borofluoride. ck k :k k :k