High Quality Graphene Devices in Graphene-Boron Nitride Systems
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Boron Nitride Substrates for High-Quality Graphene Electronics C
LETTERS PUBLISHED ONLINE: 22 AUGUST 2010 | DOI: 10.1038/NNANO.2010.172 Boron nitride substrates for high-quality graphene electronics C. R. Dean1,2*,A.F.Young3,I.Meric1,C.Lee4,5,L.Wang2,S.Sorgenfrei1,K.Watanabe6,T.Taniguchi6, P. Kim 3,K.L.Shepard1 and J. Hone2* Graphene devices on standard SiO2 substrates are highly disor- atomically planar surface should suppress rippling in graphene, dered, exhibiting characteristics that are far inferior to the which has been shown to mechanically conform to both corrugated expected intrinsic properties of graphene1–12. Although suspend- and flat substrates9,21. The dielectric properties of h-BN (e ≈ 3–4 ≈ 21 ing the graphene above the substrate leads to a substantial and Vbreakdown 0.7 V nm ) compare favourably with those of 13,14 improvement in device quality ,thisgeometryimposes SiO2, allowing the use of h-BN as an alternative gate dielectric with severe limitations on device architecture and functionality. no loss of functionality22. Moreover, the surface optical phonon There is a growing need, therefore, to identify dielectrics that modes of h-BN have energies two times larger than similar modes allow a substrate-supported geometry while retaining the in SiO2, suggesting the possibility of an improved high-temperature quality achieved with a suspended sample. Hexagonal boron and high-electric-field performance of h-BN based graphene devices nitride (h-BN) is an appealing substrate, because it has an atom- over those using typical oxide/ graphene stacks23,24. ically smooth surface that is relatively free of dangling bonds and To fabricate graphene-on-BN, we used a mechanical transfer charge traps. -
The Structure and Mechanics of Atomically-Thin
THE STRUCTURE AND MECHANICS OF ATOMICALLY-THIN GRAPHENE MEMBRANES A Dissertation Presented to the Faculty of the Graduate School of Cornell University in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy by Arend van der Zande Spring 2011 c 2011 Arend van der Zande ALL RIGHTS RESERVED THE STRUCTURE AND MECHANICS OF ATOMICALLY-THIN GRAPHENE MEMBRANES Arend van der Zande, Ph.D. Cornell University 2011 Graphene is an exciting new atomically-thin two dimensional system with ap- plications ranging from next generation transistors, to transparent and flexible electrodes, to nanomechanical systems. We study the structure, electronic, and mechanical properties of suspended graphene membranes, and use them to pro- duce mechanical resonators. We first showed that it was possible to produce suspended graphene membranes even down to one atom thick using exfoliated graphene, and resonate the mem- branes using optical interferometry. The resonators had frequencies in the MHz and quality factors from 20-850, but showed no reproducibility. In order to produce predictable and reproducible graphene resonators we de- veloped methods for making large arrays of single-layer graphene membranes of controlled size, shape and tension using chemical vapor deposition (CVD) grown graphene. We used transmission electron microscopy to study the polycrystalline structure of the graphene, we found that the different grains stitched together by disordered lines of 5-7 defects. Using electron transport and scanned probe techniques, we found that the polycrystalline grain structure reduces the ultimate strength of the graphene, but did not as strongly affect the electrical properties. We systematically studied the mechanical resonance of the single-layer CVD graphene membranes as a function of the size, clamping geometry, temperature and electrostatic tensioning. -
Optimization of Wear Loss in Silicon Nitride (Si3n4)–Hexagonal Boron Nitride (Hbn) Composite Using Doe–Taguchi Method
Ghalme et al. SpringerPlus (2016) 5:1671 DOI 10.1186/s40064-016-3379-7 CASE STUDY Open Access Optimization of wear loss in silicon nitride (Si3N4)–hexagonal boron nitride (hBN) composite using DoE–Taguchi method Sachin Ghalme1,2*, Ankush Mankar3 and Y. J. Bhalerao4 *Correspondence: [email protected] Abstract 2 Mechanical Engineering Introduction: The contacting surfaces subjected to progressive loss of material Department, Manoharbhai Patel Institute of Engineering known as ‘wear,’ which is unavoidable between contacting surfaces. Similar kind of and Technology, Gondia, phenomenon observed in the human body in various joints where sliding/rolling Maharashtra, India contact takes place in contacting parts, leading to loss of material. This is a serious issue Full list of author information is available at the end of the related to replaced joint or artificial joint. article Case description: Out of the various material combinations proposed for artificial joint or joint replacement Si3N4 against Al2O3 is one of in ceramic on ceramic category. Minimizing the wear loss of Si3N4 is a prime requirement to avoid aseptic loosening of artificial joint and extending life of joint. Discussion and evaluation: In this paper, an attempt has been made to investigate the wear loss behavior of Si3N4–hBN composite and evaluate the effect of hBN addition in Si3N4 to minimize the wear loss. DoE–Taguchi technique is used to plan and analyze experiments. Conclusion: Analysis of experimental results proposes 15 N load and 8 % of hBN addi- tion in Si3N4 is optimum to minimize wear loss against alumina. Keywords: Silicon nitride (Si3N4), Hexagonal boron nitride (hBN), Alumina (Al2O3), Design of experiment (DoE), Taguchi technique Background Mechanical behavior of various machine elements, such as gears, cams, wheels, rails and sealing parts are influenced by the interaction between contact elements and surfaces. -
Ceramic Carbides: the Tough Guys of the Materials World
Ceramic Carbides: The Tough Guys of the Materials World by Paul Everitt and Ian Doggett, Technical Specialists, Goodfellow Ceramic and Glass Division c/o Goodfellow Corporation, Coraopolis, Pa. Silicon carbide (SiC) and boron carbide (B4C) are among the world’s hardest known materials and are used in a variety of demanding industrial applications, from blasting-equipment nozzles to space-based mirrors. But there is more to these “tough guys” of the materials world than hardness alone—these two ceramic carbides have a profile of properties that are valued in a wide range of applications and are worthy of consideration for new research and product design projects. Silicon Carbide Use of this high-density, high-strength material has evolved from mainly high-temperature applications to a host of engineering applications. Silicon carbide is characterized by: • High thermal conductivity • Low thermal expansion coefficient • Outstanding thermal shock resistance • Extreme hardness FIGURE 1: • Semiconductor properties Typical properties of silicon carbide • A refractive index greater than diamond (hot-pressed sheet) Chemical Resistance Although many people are familiar with the Acids, concentrated Good Acids, dilute Good general attributes of this advanced ceramic Alkalis Good-Poor (see Figure 1), an important and frequently Halogens Good-Poor overlooked consideration is that the properties Metals Fair of silicon carbide can be altered by varying the Electrical Properties final compaction method. These alterations can Dielectric constant 40 provide knowledgeable engineers with small Volume resistivity at 25°C (Ohm-cm) 103-105 adjustments in performance that can potentially make a significant difference in the functionality Mechanical Properties of a finished component. -
High-Quality Graphene and Hexagonal- Boron Nitride Transfers on Sio2
High-Quality Graphene and Hexagonal- Boron Nitride Transfers on SiO2 1 MELISSA HUYNH CHEMICAL ENGINEERING DEPARTMENT OF OREGON STATE UNIVERSITY DR. JUN JIAO, LESTER LAMPERT REU - PORTLAND STATE UNIVERSITY Overview 2 Importance High- Results and Quality Methodology Interpretation Graphene & HBN Raman Analysis Overview 3 Importance High- Results and Quality Methodology Interpretation Graphene & HBN Raman Analysis 2D Materials 4 Graphene Zero overlap semimetal Durable Heat and electricity conductivity Hexagonal-Boron Nitride Similar properties to graphene Future Application 5 Biological engineering Optical Electronics Composite materials Super Capacitors/ Energy Storage Overview 6 Importance High- Results and Quality Methodology Interpretation Graphene & HBN Raman Analysis Growth 7 Chemical Vapor Deposition (CVD) Copper catalyst Vertical growth with furnace Methane, hydrogen, argon gases Transfer of Graphene 8 PMMA spin coat Ammonium Persulfate (APS) Rinse Heat Acetone bath Transfer of HBN 9 Copper foil APS Corral Pumps Polymer-Free Approach 10 Similar to H-BN Outflow: APS Inflow: DI H2O and Isopropyl Alcohol Overview 11 Importance High- Results and Quality Methodology Interpretation Graphene & HBN Raman Analysis Graphene Spectrum 12 D band G band D/g 2D Band 2D/G Ideal Spectrum HBN spectrum 13 1300-1400 range Weak readings Carbon contamination Ideal Spectrum Overview 14 Importance High- Results and Quality Methodology Interpretation Graphene & HBN Raman Analysis Graphene Analysis Grown at 830 ̊ C [edge] -
Production of Boron Nitride Using Chemical Vapor Deposition Method a Thesis Submitted to the Graduate School of Nature
PRODUCTION OF BORON NITRIDE USING CHEMICAL VAPOR DEPOSITION METHOD A THESIS SUBMITTED TO THE GRADUATE SCHOOL OF NATURE AND APPLIED SCIENCES OF MIDDLE EAST TECHNICAL UNIVERSITY BY ÖZGE MERCAN IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF MASTER OF SCIENCE IN CHEMICAL ENGINEERING FEBRUARY 2014 Approval of the thesis: PRODUCTION OF BORON NITRIDE USING CHEMICAL VAPOR DEPOSITION METHOD submitted by ÖZGE MERCAN in partial fulfillment of the requirements for the degree of Master of Science in Chemical Engineering Department, Middle East Technical University by, Prof. Dr. Canan Özgen Dean, Graduate School of Natural and Applied Sciences Prof. Dr. Halil Kalıpçılar Head of Department, Chemical Engineering, Prof. Dr. H. Önder Özbelge Supervisor, Chemical Engineering Dept, Assoc. Prof. Dr. Naime Aslı Sezgi Co-supervisor, Chemical Engineering Dept, Examining Committee Members Prof. Dr. Hayrettin Yücel Chemical Engineering Department, METU Prof. Dr. H. Önder Özbelge Chemical Engineering Department, METU Prof. Dr. Nail Yaşyerli Chemical Engineering Department, Gazi Unv. Prof. Dr. Halil Kalıpçılar Chemical Engineering Department, METU Yard. Doç. Dr. Zeynep Çulfaz Emecen Chemical Engineering Department, METU Date : I hereby declare that all information in this document has been obtained and presented in accordance with academic rules, and ethical conduct. I also declare that, as required by these rules and conduct, I have fully cited and referenced all material and results that are not original to this work. Name, Last Name : ÖZGE MERCAN Signature : iv ABSTRACT PRODUCTION OF BORON NITRIDE USING CHEMICAL VAPOR DEPOSITION METHOD Mercan, Özge Master of Science, Department of Chemical Engineering Supervisor : Prof. Dr. H. Önder Özbelge Co-Supervisor: Assoc. -
Molecular Dynamics Simulations of Silicon Carbide, Boron Nitride and Silicon for Ceramic Matrix Composite Applications
NASA/TM—2019-220305 Molecular Dynamics Simulations of Silicon Carbide, Boron Nitride and Silicon for Ceramic Matrix Composite Applications Olanrewaju Aluko University of Michigan-Flint, Flint, Michigan Evan J. Pineda, Trenton M. Ricks, and Steven M. Arnold Glenn Research Center, Cleveland, Ohio August 2019 NASA STI Program . in Profi le Since its founding, NASA has been dedicated • CONTRACTOR REPORT. Scientifi c and to the advancement of aeronautics and space science. technical fi ndings by NASA-sponsored The NASA Scientifi c and Technical Information (STI) contractors and grantees. Program plays a key part in helping NASA maintain this important role. • CONFERENCE PUBLICATION. Collected papers from scientifi c and technical conferences, symposia, seminars, or other The NASA STI Program operates under the auspices meetings sponsored or co-sponsored by NASA. of the Agency Chief Information Offi cer. It collects, organizes, provides for archiving, and disseminates • SPECIAL PUBLICATION. Scientifi c, NASA’s STI. The NASA STI Program provides access technical, or historical information from to the NASA Technical Report Server—Registered NASA programs, projects, and missions, often (NTRS Reg) and NASA Technical Report Server— concerned with subjects having substantial Public (NTRS) thus providing one of the largest public interest. collections of aeronautical and space science STI in the world. Results are published in both non-NASA • TECHNICAL TRANSLATION. English- channels and by NASA in the NASA STI Report language translations of foreign scientifi c and Series, which includes the following report types: technical material pertinent to NASA’s mission. • TECHNICAL PUBLICATION. Reports of For more information about the NASA STI completed research or a major signifi cant phase program, see the following: of research that present the results of NASA programs and include extensive data or theoretical • Access the NASA STI program home page at analysis. -
Carbon and Boron Nitride Nanotube Fabricated Supercapacitors
Old Dominion University ODU Digital Commons Electrical & Computer Engineering Theses & Dissertations Electrical & Computer Engineering Spring 2016 Carbon and Boron Nitride Nanotube Fabricated Supercapacitors Derek Christian Demuth Old Dominion University, [email protected] Follow this and additional works at: https://digitalcommons.odu.edu/ece_etds Part of the Electrical and Computer Engineering Commons Recommended Citation Demuth, Derek C.. "Carbon and Boron Nitride Nanotube Fabricated Supercapacitors" (2016). Master of Science (MS), Thesis, Electrical & Computer Engineering, Old Dominion University, DOI: 10.25777/ 59m8-r065 https://digitalcommons.odu.edu/ece_etds/6 This Thesis is brought to you for free and open access by the Electrical & Computer Engineering at ODU Digital Commons. It has been accepted for inclusion in Electrical & Computer Engineering Theses & Dissertations by an authorized administrator of ODU Digital Commons. For more information, please contact [email protected]. CARBON AND BORON NITRIDE NANOTUBE FABRICATED SUPERCAPACITORS by Derek Christian Demuth B.A. May 2007, Virginia Polytechnic and State Institute B.S. December 2014, Old Dominion University A Thesis Submitted to the Faculty of Old Dominion University in Partial Fulfillment of the Requirements for the Degree of MASTER OF SCIENCE ELECTRICAL AND COMPUTER ENGINEERING OLD DOMINION UNIVERSITY May 2016 Approved by: Gon Namkoong (Director) Helmut Baumgart (Member) Abdelmageed Elmustafa (Member) ABSTRACT CARBON AND BORON NITRIDE NANOTUBE FABRICATED SUPERCAPACITORS Derek Christian Demuth Old Dominion University, 2016 Director: Dr. Gon Namkoong The fabrication of supercapacitor devices consisting of boron nitride nanotubes (BNNTs) and carbon nanotubes (CNTs) has great theoretical capabilities of high specific capacitance, energy density, and power density. Various methods of dispersion and deposition are utilized to optimize such supercapacitors with BNNTs and CNTs, and also to produce devices with only CNTs to use as a benchmark. -
2019 CNMS User Meeting Agenda
Cover Image Clockwise, starting at the top right picture with horizontal layout 1. Ferroelectric domains in CuInP2S6 made visible by piezoresponse force microscopy. (Nina Wisinger). 2. STS map at Fermi surface shows the vortex lattices of superconducting Ni doped BaFe2As2 under a magnetic field of 4T at 4K (Zheng Gai). 3. Atomically precise graphene nanoribbons grown on a gold substrate with molecular precursors (An-Ping Li). 4. SEM image of exfoliated iron oxide (rust) from a steel plate (Bernadeta Srijanto/Dale Hensley). 5. A special aberration correction algorithm shows that Si/SiGe interfacial widths can be accurately measured with a 1 precision using atom probe tomography (APT) as verified with scanning transmission electron microscopy measurements. The image shows APT atom maps aligned with a STEMÅ -HADDF image of a Si/SiGe interface from the same wafer region (Jonathan Poplawsky). Further details can be found here: https://science.energy.gov/bes/highlights/2018/bes-2018-08-e/ 6. WS2 crystals grown by chemical vapor deposition amidst lithographically-patterned Si nanopillars. SEM and AFM topography images (lower two panels) indicate triangular monolayer crystals, while intensity maps of second harmonic generation (top) and photoluminescence reveal crystalline domains and defects. (Alex Puretzky/Kai Xiao). 7. Helium ion microscope image of milled CVD graphene on SiN. The difference in contrast is a result of helium ion collisions defecting the graphene, which reduces the conductivity. (Jake Swett, Univ. of Oxford) 8. The Cu exchanged SSZ-13 zeolite catalyst shows a remarkedly improved lifetime compared to that of ZSM-5 in diesel engine catalytic converters for NOx reduction. -
Thermal Conduction Across a Boron Nitride and Silicon Oxide Interface
Thermal conduction across a boron nitride and silicon oxide interface † ‡ Xinxia Li1,2, Yaping Yan1,2, Lan Dong1,2, Jie Guo1,2, Adili Aiyiti1,2, Xiangfan Xu1,2,3 , Baowen Li4 1 Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China 2 China-EU Joint Lab for Nanophononics, Tongji University, Shanghai 200092, China 3 Institute for Advanced Study, Tongji University, Shanghai 200092, China 4 Department of Mechanical Engineering, University of Colorado, Boulder, CO 80309, USA Correspondence and requests for materials should be addressed to X.X.([email protected]) or B.L.([email protected]) Abstract The needs for efficient heat removal and superior thermal conduction in nano/micro devices have triggered tremendous studies in low-dimensional materials with high thermal conductivity. Hexagonal boron nitride (h-BN) is believed to be one of the candidates for thermal management and heat dissipation due to its novel physical properties, i.e. thermal conductor and electrical insulator. Here we reported interfacial thermal resistance between few-layer h-BN and its silicon oxide substrate using differential 3ω method. The measured interfacial thermal resistance is around ~1.6×10-8 m2K/W for -8 2 monolayer h-BN and ~3.4×10 m K/W for 12.8nm-thick h-BN in metal/h-BN/SiO2 interfaces. Our results suggest that the voids and gaps between substrate and thick h-BN flakes limit the interfacial thermal conduction. This work provides a deeper understanding of utilizing h-BN flake as lateral heat spreader in electronic and optoelectronic nano/micro devices with further miniaturization and integration. -
Graphene, Hexagonal Boron Nitride (H-BN), Silicene, Germanium, Black Phosphorus (BP), Transition Metal Sulfides and So On
RSC Advances View Article Online REVIEW View Journal | View Issue Graphene, hexagonal boron nitride, and their heterostructures: properties and applications Cite this: RSC Adv.,2017,7, 16801 Jingang Wang,abcd Fengcai Ma*b and Mengtao Sun*abc In recent years, two-dimensional atomic-level thickness crystal materials have attracted widespread interest such as graphene, hexagonal boron nitride (h-BN), silicene, germanium, black phosphorus (BP), transition metal sulfides and so on. These graphene-like two-dimensional (2D) materials have a lot of excellent characteristics such as high specific surface area and high Young's modulus, and many potential applications in diverse areas such as photo-electricity, catalysts, and transistors. In this review, Received 7th January 2017 we introduced the synthesis, structure, properties, and applications of graphene, h-BN, and their Accepted 23rd February 2017 heterostructures, especially focused on their mechanical, optical, thermal, electric, and magnetic DOI: 10.1039/c7ra00260b properties. Finally, we present the outlooks and perspectives for these types of excellent 2D materials rsc.li/rsc-advances and their potential applications. Creative Commons Attribution-NonCommercial 3.0 Unported Licence. 1 Introduction to the two- of graphene, because of the effects of thermal expansion, theoretical and experimental scientists believed that at nite dimensional materials temperatures strict two-dimensional crystals could not be 1.1 Introduction to graphene stable. However, in 2004, Geim and Novoselov3 produced a single layer of carbon in atoms-level thickness using micro- Graphene is a single layer of graphite sheet, constituting the mechanical exfoliation (Microexfoliation) and studied the basic unit of graphite, carbon nanotubes, fullerenes, and other electric eld effect (see Fig. -
Nanoscale Imaging of Lithium Ion Distribution During in Situ Operation Of
Nanoscale Imaging of Lithium Ion Distribution During In Situ Operation of Battery Electrode and Electrolyte Megan E. Holtz,1+ Yingchao Yu,2+ Deniz Gunceler,3 Jie Gao,2 Ravishankar Sundararaman,3 Kathleen A. Schwarz,2 Tomás A. Arias,3 Héctor D. Abruña,2 David A. Muller1,4* 1 School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853 2 Department of Chemistry and Chemical Biology, Cornell University, Ithaca, NY 14853 3 Department of Physics, Cornell University, Ithaca, NY 14853 4 Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY 14853 + These authors contributed equally to this work. *Corresponding author 1 A major challenge in the development of new battery materials is understanding their fundamental mechanisms of operation and degradation. Their microscopically inhomogeneous nature calls for characterization tools that provide operando and localized information from individual grains and particles. Here we describe an approach that images the nanoscale distribution of ions during electrochemical charging of a battery in a transmission electron microscope liquid flow cell. We use valence energy-loss spectroscopy to track both solvated and intercalated ions, with electronic structure fingerprints of the solvated ions identified using an ab initio non- linear response theory. Equipped with the new electrochemical cell holder, nanoscale spectroscopy and theory, we have been able to determine the lithiation state of a LiFePO4 electrode and surrounding aqueous electrolyte in real time with nanoscale resolution during electrochemical charge and discharge. We follow lithium transfer between electrode and electrolyte and observe charging dynamics in the cathode that differ among individual particles. This technique represents a general approach for the operando nanoscale imaging of electrochemically active ions in a wide range of electrical energy storage systems.