Investigations Into the Reactivity of an Anionic Gallium(I) TV
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The Road Travelled: After Main‐Group Elements As Transition Metals
ChemCatChem 10.1002/cctc.201800963 MINIREVIEW The Road Travelled: After Main-group Elements as Transition Metals Catherine Weetman and Shigeyoshi Inoue* Dedicated to Professor Philip Power on the occasion of his 65th birthday Manuscript Accepted This article is protected by copyright. All rights reserved. ChemCatChem 10.1002/cctc.201800963 CONCEPT The Road Travelled: After Main-group Elements as Transition Metals Catherine Weetman and Shigeyoshi Inoue* Dedicated to Professor Philip Power on the occasion of his 65th birthday Abstract: Since the latter quarter of the twentieth century, main group conditions. This was rationalised due to main group species chemistry has undergone significant advances. Power’s timely review possessing donor/acceptor frontier orbitals which are separated in 2010 highlighted the inherent differences between the lighter and by modest energy gaps, thus drawing comparisons to open-shell heavier main group elements, and that the heavier analogues transition metal species. resemble transition metals as shown by their reactivity towards small In the last 10 years since the landmark review, main group molecules. In this concept article, we present an overview of the last chemistry has continued to flourish. Frustrated Lewis Pair (FLP) 10 years since Power’s seminal review, and the progress made for chemistry has been widely established since the pioneering work catalytic application. This examines the use of low-oxidation state of Stephan.[7] Many more donor/acceptor combinations of main- and/or low-coordinate group 13 and 14 complexes towards small group elements have been isolated (as predicted by Power[1]) and molecule activation (oxidative addition step in a redox based cycle) have led to a variety of new reactions through new mechanistic and how ligand design plays a crucial role in influencing subsequent pathways.[8] For example, the use of phosphonium cations have reactivity. -
Supporting Information For: Solution Phase Synthesis of Indium Gallium Phosphide Alloy Nanowires Nikolay Kornienko , Desiré D
Supporting Information for: Solution Phase Synthesis of Indium Gallium Phosphide Alloy Nanowires Nikolay Kornienko1, Desiré D. Whitmore1, Yi Yu1, Stephen R. Leone1,2,4, Peidong Yang*1,3,5,6 1Department of Chemistry, 2Department of Physics and 3Department of Materials Science Engineering, University of California, Berkeley 94720, United States 4Chemical Sciences Division and 5Materials Sciences Division, Lawrence Berkeley National Lab, Berkeley CA 94720, United States 6Kavli Energy Nanosciences Institute, Berkeley, California 94720, United States * Correspondence to: [email protected] Table of Contents: Figure S1. TEM In/Ga growth seeds ............................................................................................................................. 2 Figure S2. TEM of InP and GaP NWs ............................................................................................................................. 2 Figure S3. Composition and diameter control ......................................................................................................... 3 Figure S4. XRD of InxGa1‐xP NWs .................................................................................................................................. 4 Figure S5. Electron diffraction of InxGa1‐xP NWs ................................................................................................... 5 Figure S6. Raman spectra of InP and GaP .................................................................................................................. 6 -
Arxiv:1010.1610V1 [Physics.Ins-Det] 8 Oct 2010 Ai Mouneyrac, David Emndtetm Osat O H Rpigadde- and Illumination
Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs and 4H-SiC semiconductors under light illumination at cryogenic temperatures David Mouneyrac,1,2 John G. Hartnett,1 Jean-Michel Le Floch,1 Michael E. Tobar,1 Dominique Cros,2 Jerzy Krupka3∗ 1School of Physics, University of Western Australia 35 Stirling Hwy, Crawley 6009 WA Australia 2Xlim, UMR CNRS 6172, 123 av. Albert Thomas, 87060 Limoges Cedex - France 3Institute of Microelectronics and Optoelectronics Department of Electronics, Warsaw University of Technology, Warsaw, Poland (Dated: October 27, 2018) We report on extremely sensitive measurements of changes in the microwave properties of high purity non-intentionally-doped single-crystal semiconductor samples of gallium phosphide, gallium arsenide and 4H-silicon carbide when illuminated with light of different wavelengths at cryogenic temperatures. Whispering gallery modes were excited in the semiconductors whilst they were cooled on the coldfinger of a single-stage cryocooler and their frequencies and Q-factors measured under light and dark conditions. With these materials, the whispering gallery mode technique is able to resolve changes of a few parts per million in the permittivity and the microwave losses as compared with those measured in darkness. A phenomenological model is proposed to explain the observed changes, which result not from direct valence to conduction band transitions but from detrapping and retrapping of carriers from impurity/defect sites with ionization energies that lay in the semicon- ductor band gap. Detrapping and retrapping relaxation times have been evaluated from comparison with measured data. PACS numbers: 72.20.Jv 71.20.Nr 77.22.-d I. -
Bis(N-Heterocyclic Carbene)Carbazolide Pincer Complexes of S- and P-Block Metals and Related Studies
AUSTRALIA Bis(N-Heterocyclic Carbene)Carbazolide Pincer Complexes of s- and p-Block Metals and Related Studies A thesis in partial fulfilment of the requirements for the degree of Doctor of Philosophy (Chemistry) by Kai N. Buys Supervisor: Assoc. Prof. Marcus L. Cole School of Chemistry The University of New South Wales Sydney, Australia April 2017 THE UNIVERSITY OF NEW SOUTH WALES Thesis/Dissertation Sheet Surname or Family name: BUYS First name: KAI Other name/s: NICHOLAS Abbreviation for degree as given in the University calendar: PhD School: CHEMISTRY Faculty: SCIENCE Title: Bis(N Heterocyclic Carbene)Carbazolide Pincer Complexes of s- and p-Block Metals and Related Studies Abstract 350 words maximum: This work presents synthetic investigations into main group organometallic chemistry, placing particular emphasis on the study of bis-N-heterocyclic carbene (NHC) carbazolide coordination environments. Complexes of high and low oxidation state metals from the s- and p-blocks were targeted and these comprise the content of the experimental chapters two through five. Chapter one serves as a general introduction to rationalise the intent of this work. Herein focus is drawn to the nascent field of organometallic main group chemistry in the form of a discussion of its history using pertinent recent examples from the literature. Chapter two details the synthesis of an emerging class of versatile bis(NHC)carbazolide pincer ligands; bimcaR, and their complexation to s-block metals. The development of a new zwitterionic bis(imidazolium)carbazolide proligand is discussed, as well as the structural metrics of new lithium and magnesium bimcaR derivatives. Specifically, a new iodomagnesium complex is probed for its synthetic utility as a ligand-transfer agent and catalytic precursor in conjunction with attempts to access a reduced Mg(I) derivative. -
Basic Light Emitting Diodes
The following is for information purposes only and comes with no warranty. See http://www.bristolwatch.com/ Light Emitting Diodes Light Emitting Diodes are made from compound type semiconductor materials such as Gallium Arsenide (GaAs), Gallium Phosphide (GaP), Gallium Arsenide Phosphide (GaAsP), Silicon Carbide (SiC) or Gallium Indium Nitride (GaInN). The exact choice of the semiconductor material used will determine the overall wavelength of the photon light emissions and therefore the resulting color of the light emitted, as in the case of the visible light colored LEDs, (RED, AMBER, GREEN etc). Before a light emitting diode can "emit" any form of light it needs a current to flow through it, as it is a current dependent device. As the LED is to be connected in a forward bias condition across a power supply it should be Current Limited using a series resistor to protect it from excessive current flow. From the table above we can see that each LED has its own forward voltage drop across the PN junction and this parameter which is determined by the semiconductor material used is the forward voltage drop for a given amount of forward conduction current, typically for a forward current of 20mA. In most cases LEDs are operated from a low voltage DC supply, with a series resistor to limit the forward current to a suitable value from say 5mA for a simple LED indicator to 30mA or more where a high brightness light output is needed. Typical LED Characteristics Semiconductor Material Wavelength Color voltage at 20mA GaAs 850-940nm Infra-Red 1.2v GaAsP 630-660nm Red 1.8v GaAsP 605-620nm Amber 2.0v GaAsP:N 585-595nm Yellow 2.2v GaP 550-570nm Green 3.5v SiC 430-505nm Blue 3.6v GaInN 450nm White 4.0v 1 Multi-LEDs LEDs are available in a wide range of shapes, colors and various sizes with different light output intensities available, with the most common (and cheapest to produce) being the standard 5mm Red LED. -
Nonlinear Properties of III-V Semiconductor Nanowaveguides
Nonlinear Properties of III-V Semiconductor Nanowaveguides ELEONORA DE LUCA Doctoral Thesis in Physics School of Engineering Sciences KTH Royal Institute of Technology Stockholm, Sweden 2019 Akademisk avhandling som med tillstånd av Kungliga Tekniska högskolan fram- lägges till offentlig granskning för avläggande av teknologie doktorsexamen i fysik onsdag den 23 oktober 2019 klockan 10:00 i sal FA32, AlbaNova Universitetscent- rum, Kungliga Tekniska Högskolan, Roslagstullsbacken 21, Stockholm. TRITA-SCI-FOU 2019:45 • ISBN 978-91-7873-318-7 "O frati," dissi, "che per cento milia perigli siete giunti a l’occidente, a questa tanto picciola vigilia d’i nostri sensi ch’é del rimanente non vogliate negar l’esperïenza, di retro al sol, del mondo sanza gente. Considerate la vostra semenza: fatti non foste a viver come bruti, ma per seguir virtute e canoscenza". Dante Alighieri. Commedia. Inferno – Canto XXVI. "O brothers, who amid a hundred thousand Perils," I said, "have come unto the West, To this so inconsiderable vigil Which is remaining of your senses still, Be ye unwilling to deny the knowledge, Following the sun, of the unpeopled world. Consider ye the seed from which ye sprang; Ye were not made to live like unto brutes, But for pursuit of virtue and of knowledge" Dante Alighieri. Commedia. Inferno – Canto XXVI. Translated by Henry Wadsworth Longfellow. Abstract Nonlinear optics (NLO) plays a major role in the modern world: nonlin- ear optical phenomena have been observed in a wavelength range going from the deep infrared to the extreme ultraviolet, to THz radiation. The optical nonlinearities can be found in crystals, amorphous materials, polymers, liquid crystals, liquids, organic materials, and even gases and plasmas. -
Structures, Energies, and Bonding Analysis of Monoaurated Complexes with N-Heterocyclic Carbene and Analogues T.A.N
ASEAN J. Sci. Technol. Dev., 32(1): 1 – 15 Structures, Energies, and Bonding Analysis of Monoaurated Complexes with N-Heterocyclic Carbene and Analogues T.A.N. NGUYEN1*, T.P.L. HUYNH1, T.X.P. VO1, T.H. TRAN1, D.S. TRAN2, T.H. DANG3 AND T.Q. DUONG4 In this work, we computationally investigated from quantum chemical calculations (DFT) at the BP86 level with the various basis sets def2-SVP, def2-TZVPP, and TZ2P+, chemical bonding issues of the recently described carbene-analogues gold(I) complexes AuCl-NHEMe (Au1-NHE) with E = C – Pb. The optimized structures and the metal-ligand bond dissociation energy (BDE) were calculated, and the nature of the E→Au bond was studied with charge and energy decomposition methods. The equilibrium structures of the system showed that there were major differences in the bonded orientation from the ligands NHC-NHPb to gold(I) complex between the lighter and the heavier homologues. The BDEs results showed that the metal-carbene analogues bonds were very strong bonds and the strongest bond was calculated for Au1-NHC which had the bond strength De = 79.2 kcal/mol. Bonding analysis of Au1-NHE showed that NHE ligands exhibited donor- acceptor bonds with the σ lone pair electrons of NHE donated into the vacant orbital of the acceptor fragment (AuCl). The EDA-NOCV results indicated that the ligand NHE in Au1-NHE complexes were strong σ-donors and very weak π donor and the bond order in complexes was Au1-NHC > Au1-NHSi > Au1-NHGe > Au1-NHSn > Au1-NHPb. We also realised that the gold-ligand bond was characterized by a π back-donation component from the Au to the ligand. -
WP934SA/IYGD5V T-1 (3Mm) Tri-Level Circuit Board Indicator
WP934SA/IYGD5V T-1 (3mm) Tri-Level Circuit Board Indicator DESCRIPTIONS PACKAGE DIMENSIONS The High Efficiency Red source color devices are LED1 : Red made with Gallium Arsenide Phosphide on Gallium LED2 : Yellow Phosphide Orange Light Emitting Diode LED3 : Green The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode The Green source color devices are made with Gallium Phosphide Green Light Emitting Diode Electrostatic discharge and power surge could damage the LEDs It is recommended to use a wrist band or anti-electrostatic glove when handling the LEDs All devices, equipments and machineries must be electrically grounded FEATURES Pre-trimmed leads for pc mounting Black case enhances contrast ratio High reliability life measured in years Housing UL rating: 94V-0 Housing material: Type 66 nylon 5V internal resistor RoHS compliant APPLICATIONS Notes: 1. All dimensions are in millimeters (inches). Status indicator 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. Illuminator 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. Signage applications Decorative and entertainment lighting Commercial and residential architectural lighting ATTENTION Observe precautions for handling electrostatic discharge sensitive devices SELECTION GUIDE Iv (mcd) V = 5V [2] Viewing Angle [1] Emitting Color Part Number Lens Type (Material) Min. Typ. 2θ1/2 12 25 ■ High Efficiency Red Red Diffused 50° (GaAsP/GaP) *6 *14 7 15 WP934SA/IYGD5V ■ Yellow (GaAsP/GaP) Yellow Diffused 50° *7 *15 12 25 ■ Green (GaP) Green Diffused 50° *12 *25 Notes: 1. -
Sub-90° Interligand Bond Angles in Heavier Group 14 Dichalcogenolates
This is an electronic reprint of the original article. This reprint may differ from the original in pagination and typographic detail. Author(s): Rekken, Brian; Brown, Thomas; Fettinger, James; Lips, Felicitas; Tuononen, Heikki; Herber, Rolfe; Power, Philip Title: Dispersion Forces and Counterintuitive Steric Effects in Main Group Molecules: Heavier Group 14 (Si-Pb) Dichalcogenolate Carbene Analogues with Sub-90° Interligand Bond Angles Year: 2013 Version: Please cite the original version: Rekken, B., Brown, T., Fettinger, J., Lips, F., Tuononen, H., Herber, R., & Power, P. (2013). Dispersion Forces and Counterintuitive Steric Effects in Main Group Molecules: Heavier Group 14 (Si-Pb) Dichalcogenolate Carbene Analogues with Sub- 90° Interligand Bond Angles. Journal of the American Chemical Society, 135(27), 10134-10148. https://doi.org/10.1021/ja403802a All material supplied via JYX is protected by copyright and other intellectual property rights, and duplication or sale of all or part of any of the repository collections is not permitted, except that material may be duplicated by you for your research use or educational purposes in electronic or print form. You must obtain permission for any other use. Electronic or print copies may not be offered, whether for sale or otherwise to anyone who is not an authorised user. Dispersion Forces and Counterintuitive Steric Effects in Main Group Molecules: Heavier Group 14 (Si-Pb) Dichalcogenolate Carbene Analogues with Sub-90° Interligand Bond Angles Brian D. Rekken,† Thomas M. Brown,† James C. Fettinger,† Felicitas Lips,† Heikki M. Tuononen,*,§ Rolfe H. Herber,*,‡ Philip P. Power*,† †Department of Chemistry, University of California, Davis, One Shields Avenue, Davis, California, 95616, USA ‡Racah Institute of Physics, Hebrew University of Jerusalem, 91904, Jerusalem, Israel §Department of Chemistry, University of Jyväskylä, P.O. -
LED) Materials and Challenges- a Brief Review
6 IV April 2018 http://doi.org/10.22214/ijraset.2018.4723 International Journal for Research in Applied Science & Engineering Technology (IJRASET) ISSN: 2321-9653; IC Value: 45.98; SJ Impact Factor: 6.887 Volume 6 Issue IV, April 2018- Available at www.ijraset.com Different Types of in Light Emitting Diodes (LED) Materials and Challenges- A Brief Review BY Susan John1 1Dept Of Physics S. F. S College Nagpur 06, Maharashtra State. India I. INTRODUCTION LEDs are semiconductor devices, which produce light when current flows through them. It is a two-lead semiconductor light source. It is a p–n junction diode that emits light when activated. When a suitable current is applied electrons are able to recombine with electron holes within the device, releasing energy in the form of photons. This effect is called electroluminescence, and the color of the light is determined by the energy band gap of the semiconductor. LEDs are typically very small. In order to improve the efficiency many researches in LEDs and its phosphor has been taking place. However still many technical challenges such as conversion losses, color control, current efficiency droop, color shift, system reliability as well as in light distribution, dimming, thermal management and driver power supply performances etc need to be met in order to achieve low cost and high efficiency. [1] Keywords: Glare, blue hazard and semiconductor. I. DIFFERENT TYPES OF LEDS MATERIALS USED: A. Gallium Arsenide (GaAs) emits infra-red light B. Gallium Arsenide Phosphide (GaAsP) emits red to infra-red, orange light C. Gallium Phosphide (GaP) emits red, yellow and green light D. -
Gallium Phosphide Light Sources and Photocells
136 PHILIPS TECHNICAL REVIEW VOLUME 26 Gallium phosphide light sources and photocells H. G. Grimmeiss, W. Kischio and H. Scholz 621.383 :546.681 '183 Preparation and doping of GaP The methods of analysis used by us have failed to Amongst semiconductors with a relatively large detect the presence of carbon, which interferes with energy (band) gap, gallium phosphide has aroused luminescence in GaP, and this implies that the samples interest for various reasons. For one thing, by reason must have a e concentration of less than 5 X 10-4 %. of its 2.25 eV band gap, it is suitable for making P-N In the undoped state these crystals only exhibit very diodes which in some cases emit light in the visible weak luminescence. range of the spectrum. Our first task was to prepare gallium phosphide of high purity since, as will be made clear below, the efficiency of GaP light sources is very much dependent on the purity of the starting material. GaP is prepared by allowing gallium to react with phosphine; an ample supply of the latter gas, in a very high state of purity, can be obtained by decomposition of aluminium phos- phide with water. The aluminium phosphide is pre- pared by reacting aluminium with phosphorus. A mixture of pure aluminium and red phosphorus in an atomic ratio of 1: 1.1 is placed in an iron crucible and ignited. The reaction is fairly violent: some of the phosphorus evaporates and escapes into the atmo- sphere, where it burns spontaneously (fig. J). The aluminium phosphide yielded by the reaction is a porous sintered substance, yellow in colour. -
Gallium Nitride Phosphide Absorber for Silicon-Based Solar Power Researchers Achieve 3X Efficiency of Best Gallium Phosphide Solar Cell to Date
Technology focus: Photovoltaics 71 Gallium nitride phosphide absorber for silicon-based solar power Researchers achieve 3x efficiency of best gallium phosphide solar cell to date. esearchers in the USA have been working on that conversion efficiencies up to 45% could be gallium nitride phosphide (GaNP) as an absorb- achieved from an AM1.5G solar spectrum with a III-V Ring material for solar power [S. Sukrittanon et material on silicon. al, Appl. Phys. Lett., vol107, p153901, 2015]. The aim Gallium phosphide is one contender for such a top cell of the team from University of California San Diego since it is near lattice matched (0.37% mismatch) and (UCSD) and Sandia National Laboratories is to create a has a suitable bandgap of 2.26eV. Unfortunately GaP suitable sub-cell to boost the performance of silicon- has an indirect bandgap, which makes for inefficient based photovoltaic power conversion. Theory suggests photon conversion to electric power. Figure 1. Cross-sections of GaP control and GaNP solar cells. Inset: x-ray diffraction (XRD) spectra. www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 10 • Issue 10 • December 2015/January 2016 72 Technology focus: Photovoltaics With the addition of only 0.4% of nitrogen into GaP, giving GaNP, the bandgap becomes direct, shifting absorption coefficients from 102–103/cm towards 104/cm. Further, at a nitro- gen concentration of 2%, GaNP becomes lattice matched with silicon. The UCSD/Sandia researchers achieved effi- ciencies up to 7.9% without a window layer. The team comments: “This GaNP solar cell’s efficiency is 3x higher than the most effi- cient GaP solar cell to date and higher than other solar cells with similar direct bandgap (InGaP, GaAsP).” They add: “These perform- ance gains are expected to motivate further investiga- tion into the integration of GaNP into future dual- junction solar cells on sili- con substrate.” The solar cells were grown on GaP substrates by molecular beam epitaxy (MBE) at 570°C (Figure 1).