Fundamentals of Thermal Management

Total Page:16

File Type:pdf, Size:1020Kb

Fundamentals of Thermal Management Source: FUNDAMENTALS OF MICROSYSTEMS PACKAGING CHAPTER 6 FUNDAMENTALS OF THERMAL MANAGEMENT Prof. Avram Bar-Cohen University of Minnesota Dr. Abhay Watwe Intel Corporation Prof. Kankanhally N. Seetharamu University of Science, Malaysia ................................................................................................................. Design Environment IC Thermal Management Packaging Single Materials Chip Opto and RF Functions Discrete Passives Encapsulation IC Reliability IC Assembly Inspection PWB MEMS Board Manufacturing Assembly Test Downloaded from Digital Engineering Library @ McGraw-Hill (www.digitalengineeringlibrary.com) Copyright © 2004 The McGraw-Hill Companies. All rights reserved. Any use is subject to the Terms of Use as given at the website. FUNDAMENTALS OF THERMAL MANAGEMENT ................................................................................................................. 6.1 What Is Thermal Management? 6.2 Why Thermal Management? 6.3 Cooling Requirements for Microsystems 6.4 Thermal Management Fundamentals 6.5 Thermal Management of IC and PWB Packages 6.6 Electronic Cooling Methods 6.7 Summary and Future Trends 6.8 Homework Problems 6.9 Suggested Reading CHAPTER OBJECTIVES Ⅲ Describe the need for thermal management of electronic components Ⅲ Introduce the fundamental heat transfer mechanisms of conduction, convection and radiation which play a major role in the cooling of electronic components Ⅲ Introduce the concept of thermal resistance and illustrate its usefulness in detecting the most critical thermal transfer path Ⅲ Provide simple equations and tabulate commonly used thermal properties to enable the reader to perform a first order analysis of heat transfer from an electronic package Ⅲ Describe various cooling methods typically used or considered CHAPTER INTRODUCTION All microelectronic devices require power for their use. A typical microprocessor of today uses about 35 watts, and in 2005 it is expected to use about 100 watts. This is an enormous power density that, if not properly managed, can result in microprocessor failure. This chapter addresses all thermal technologies required to understand and deal with the consequences of heat generation in electronic components. 213 Downloaded from Digital Engineering Library @ McGraw-Hill (www.digitalengineeringlibrary.com) Copyright © 2004 The McGraw-Hill Companies. All rights reserved. Any use is subject to the Terms of Use as given at the website. FUNDAMENTALS OF THERMAL MANAGEMENT 214 FUNDAMENTALS OF MICROSYSTEMS PACKAGING 6.1 WHAT IS THERMAL MANAGEMENT? The resistance to the flow of electrical current through the leads, poly-silicon layers, and transistors comprising a semiconductor device, results in significant internal heat gener- ation within an operating microelectronic component. In the absence of cooling—that is, heat removal mechanisms—the temperature of such an operating component would rise at a constant rate until it reaches a value at which the electronic operation of the device ceases or the component loses its physical integrity. Placing the device in contact with a lower temperature solid or fluid, facilitates heat flow away from the component. Due to this cooling, the temperature rise is moderated as it asymptotically approaches an ac- ceptable steady-state value. At steady-state, all the heat generated by the component is transferred to the surround- ing structure and/or fluid. Thus, the more intense the heat transfer mechanism—for example, high velocity air jets rather than natural convection, or boiling rather than low velocity liquid flow—the smaller the component temperature rise above the ambient temperature. Thermal conduction, convection, and radiation, as well as phase change processes, all play a role in electronics cooling. Successful thermal packaging relies on a judicious combination of materials and heat transfer mechanisms to stabilize the com- ponent temperature at an acceptable level. 6.2 WHY THERMAL MANAGEMENT? Despite the wide variety in size, power dissipation, and sensitivity to temperature, the thermal management of all microelectronic components is motivated by similar concerns and a common hierarchy of design considerations. The prevention of catastrophic failure—an immediate and total loss of electronic function and package integrity—is the primary and foremost aim of electronics thermal control. Catastrophic failure is often associated with a large temperature rise, which may lead to a drastic deterioration in semiconductor behavior, and/or fracture, delamination, melting, vaporization, and even combustion of the packaging materials. An understanding of the catastrophic vulnerability of the specified component(s) makes it possible to select the appropriate fluid, heat trans- fer mode, and inlet coolant temperature, and thus establish the required thermal control strategy early in the design process. Following selection of the thermal packaging strategy, attention can be turned to meet- ing the desired level of reliability and the associated target failure rates of each component and subassembly. Individual solid-state electronic devices are inherently reliable. How- ever, since a single microelectronic chip may include as many as 15 million transistors and 600 leads, and since many tens of such components may be used in a single system, achieving failure-free operation over the useful life of the product is a most formidable challenge. The minimization or elimination of thermally-induced failures often requires the reduction of the temperature rise above the ambient and minimization of temperature variations within the packaging structure(s). 6.2.1 Failure Rate Increases with Temperature The reliability of a system is defined by the probability that the system will meet the required specifications for a given period of time. As an individual electronic component contains no moving parts, it can often perform reliably for many years, especially when Downloaded from Digital Engineering Library @ McGraw-Hill (www.digitalengineeringlibrary.com) Copyright © 2004 The McGraw-Hill Companies. All rights reserved. Any use is subject to the Terms of Use as given at the website. FUNDAMENTALS OF THERMAL MANAGEMENT Chapter 6 Fundamentals of Thermal Management 215 operating at or near room temperature. In practice, integrated circuits operate at substan- tially higher temperatures and, unfortunately, most electronic components are prone to failure from prolonged exposure to elevated temperatures. This accelerated failure rate results from mechanical creep in the bonding materials, parasitic chemical reactions, and dopant diffusion, to mention just a few possibilities. These and related failure modes establish a direct link between component reliability and operating temperature, which often takes the form illustrated in Figure 6.1. This figure is shown to reflect a near- exponential dependence of the thermal acceleration factor on component temperature. Thus, a rise in temperature from 75ЊC to 125ЊC can be expected to result in a five-fold increase in failure rate. Under some conditions, a 10ЊCto20ЊC increase in chip temper- ature can double the component failure rate. As a consequence, for many package cat- egories, temperature is the strongest contributor to the loss of reliability. In such systems, thermal management is critical to the success of the electronic system. In the final thermal design stages of an electronic system, the reliability, availability, and maintainability of the proposed thermal control alternatives must be evaluated and used to guide the final technology and equipment choice. It is the role of the packaging engineer to assure that the enhanced reliability of the components, resulting from lower operating temperature, are sufficient to compensate for the additional life-cycle cost and inherent failure rate of fans, pumps, and special interface materials. 6.2.2 Packaging Levels and Heat Removal To initiate the development of a thermal design for a specified electronic product, it is first necessary to define the relevant packaging level (see Figure 6.2). The commonly accepted categorization places the chip package, which houses and protects the chip, at 10 FIGURE 6.1 Effect of temperature on failure rate. 8 6 (Failure rate) (Failure 4 Thermal Acceleration Factor 2 0 0 40 80 120 160 Temperature oC Downloaded from Digital Engineering Library @ McGraw-Hill (www.digitalengineeringlibrary.com) Copyright © 2004 The McGraw-Hill Companies. All rights reserved. Any use is subject to the Terms of Use as given at the website. FUNDAMENTALS OF THERMAL MANAGEMENT 216 FUNDAMENTALS OF MICROSYSTEMS PACKAGING Wafer Chip First Level Package (Single Chip Module) (Multichip Module ) Second Level Package (PWB) Third Level Package (Motherboard or Backplane) FIGURE 6.2 Illustration of electronics packaging levels [16]. the bottom of the packaging hierarchy (level 1). The printed wiring board (PWB), which provides the means for chip-to-chip communication, constitutes level 2, while the back- plane or ‘‘motherboard,’’ which interconnects the printed wiring boards, is termed level 3 packaging. The box, rack, or cabinet which houses the entire system is generally referred to as level 4. The primary thermal transport mechanisms and the commonly used heat removal techniques vary substantially from one packaging level to the next. Level 1 thermal packaging is primarily concerned with conducting heat from the chip to the package surface and then into the printed wiring board. At this packaging level, reduction of the
Recommended publications
  • Occupational Exposure to Heat and Hot Environments
    Criteria for a Recommended Standard Occupational Exposure to Heat and Hot Environments DEPARTMENT OF HEALTH AND HUMAN SERVICES Centers for Disease Control and Prevention National Institute for Occupational Safety and Health Cover photo by Thinkstock© Criteria for a Recommended Standard Occupational Exposure to Heat and Hot Environments Revised Criteria 2016 Brenda Jacklitsch, MS; W. Jon Williams, PhD; Kristin Musolin, DO, MS; Aitor Coca, PhD; Jung-Hyun Kim, PhD; Nina Turner, PhD DEPARTMENT OF HEALTH AND HUMAN SERVICES Centers for Disease Control and Prevention National Institute for Occupational Safety and Health This document is in the public domain and may be freely copied or reprinted. Disclaimer Mention of any company or product does not constitute endorsement by the National Institute for Occupational Safety and Health (NIOSH). In addition, citations of websites external to NIOSH do not constitute NIOSH endorsement of the sponsoring organizations or their programs or products. Furthermore, NIOSH is not responsible for the content of these websites. Ordering Information This document is in the public domain and may be freely copied or reprinted. To receive NIOSH documents or other information about occupational safety and health topics, contact NIOSH at Telephone: 1-800-CDC-INFO (1-800-232-4636) TTY: 1-888-232-6348 E-mail: [email protected] or visit the NIOSH website at www.cdc.gov/niosh. For a monthly update on news at NIOSH, subscribe to NIOSH eNews by visiting www.cdc.gov/ niosh/eNews. Suggested Citation NIOSH [2016]. NIOSH criteria for a recommended standard: occupational exposure to heat and hot environments. By Jacklitsch B, Williams WJ, Musolin K, Coca A, Kim J-H, Turner N.
    [Show full text]
  • Thermal Management of Microelectronic Equipment Heat Transfer Theory, Analysis Methods, and Design Practices
    THERMAL MANAGEMENT OF MICROELECTRONIC EQUIPMENT HEAT TRANSFER THEORY, ANALYSIS METHODS, AND DESIGN PRACTICES Downloaded From: http://ebooks.asmedigitalcollection.asme.org/ on 01/05/2016 Terms of Use: http://www.asme.org/about-asme/terms-of-use ASME Press Book Series on Electronic Packaging Dereje Agonafer, Editor-in-Chief Associate Technical Editors Administrative Editors Cristina Amon, Carnegie Mellon University Damena Agonafer A. Haji-Sheikh, University of Texas, Arlington University of Texas, Arlington Yung-Cheng Lee, University of Colorado, Boulder Wataru Nakayama, ThermTech International Senayet Agonafer Shlomo Novotny, Sun Microsystems Princeton University Al Ortega, University of Arizona, Tucson Donald Price, Raytheon Electronic Systems Viswam Puligandla, Nokia Koneru Ramakrishna, Motorola, Inc. Gamal Refai-Ahmed, Ceyba Inc. Bahgat Sammakia, SUNY, Binghamton Roger Schmidt, IBM Masaki Shiratori, Yokohama National University Suresh Sitaraman, Georgia Institute of Technology Ephraim Suhir, Iolon, Inc. About the Series Electronic packaging is experiencing unprecedented growth, as it is the key enabling technology for applications ranging from computers and telecommuni- cations, to automobiles and consumer products. Although technology improve- ments are still possible, these solutions are becoming quite expensive. In addition, technology enhancements seem to be reaching physics-based limits. Therefore, packaging can present an opportunity for performance improvements without the need for new CMOS technology. At InterPACK 1999, the flagship con- ference of the Electronic and Photonic Packaging Division, the electronic pack- aging business worldwide was estimated to be over $100 billion per year. The rapidly changing technology necessitates current and up-to-date technical knowl- edge on the subject for both practicing engineers and academic researchers. It was with this background that this book series was initiated.
    [Show full text]
  • Packaging Design & Manufacture of High Temperature Electronics
    Packaging Design & Manufacture of High Temperature Electronics Module for 225ºC Applications utilizing Hybrid Microelectronics Technology Jacob M. Li Vectron International 267 Lowell Road Hudson, NH, 03051 Tel 603-598-0070, [email protected] Abstract Many downhole instrumentation tools manufacture today utilizing organic material packaging technology for producing electronic modules. Such approach with organic PCB, standard packaged discrete semiconductor and SMT-type passive components has limited the device operating temperature range in 177ºC area. An alternative packaging approach is to utilize Hybrid Microelectronics Technology to increase the operating temperature limit up to 225ºC in production environment. Besides performance improvements on upper operating temperature limit, thermal cycling, high frequency shock and vibration, based on our customer’s reliability testing data, hermetically sealed high-temperature Hybrid module’s survivability can exceed over 7000 hours of MTTF at 225ºC high temperature storage condition along with other environmental matrix testing. Moreover, comparing with high-temperature SMT and Thru-hole Technologies, Hybrid Microcircuit increases packaging density and provides valuable real estate saving. Vectron International has successfully utilized Hybrid Technology to manufacture thousands of hi- temperature electronic module for 200ºC to 225ºC applications. This paper describes the packaging design of a 225ºC hi-temp electronic module for down-hole application using such technology. This paper will also touch bases on material selection, fabrication technique and some reliability data of this high- temperature Hybrid module. Key Words: High Temperature Electronics, Hermetic Seal, Thick-Film Introduction industry, but it could develop tremendously if the automotive market opens up. Aerospace is Extreme environment applications require another area that show promise for the near electronic system survived beyond the term [1].
    [Show full text]
  • Arctic Sun® 2000 Operator’S Manual Contents
    Arctic Sun® 2000 Operator’s Manual contents Preface . iv Customer Information and Technical Support . v Section One 1 .1 Introduction . 6 1 .2 Symbols and Standards . 7 1 .3 Environmental Conditions . 9 1 .4 Indications for Use . 9 1 .5 Contraindications for Use . 10 1 .6 Warnings . 10 1 .7 Cautions . 11 Section Two 2 .1 System Description . 16 2 .2 Model 2000 Components . 18 2 .3 Remote Display and Controls . 20 2 .4 Fluid Delivery Line . 24 2 .5 Patient Temperature Cables and Probes . 24 2 .6 Temperature Out . 25 2 .7 ArcticGel Pads . 26 Section Three 3 .1 Initial Setup . 28 3 .2 Filling the Control Module . 28 3 .3 Location of the Patient . 30 3 .4 Draining the Control Module . 31 3 .5 Cleaning and Maintenance . 31 ii Arctic Sun 2000 Operator’s Manual 3 .6 Service and Calibration . 34 3 .7 Warranty . 35 Section Four 4 .1 Beginning a Procedure . 36 4 .2 Setting Custom Parameters . 36 4 .3 Collecting Data . 40 4 .4 Pre-warming or Pre-cooling the Model 2000 . 41 4 .5 Placing the ArcticGel Pads . 42 4 .6 Connecting the Pads to the Fluid Delivery Lines . 47 4 .7 Pad Weights . 48 4 .8 Treating a Patient Using Automatic Mode . 49 4 .9 Treating a Patient Using Manual Mode . 53 4 .10 Water Flow Rate . 55 4 .11 Interrupting Treatment for Patient Transport . 56 4 .12 Ending a Procedure . 56 Section Five 5 .1 Alarms . 58 5 .2 Alerts . 60 5 .2 Troubleshooting the Arctic Sun System . 60 Appendices A . Installation Procedure .
    [Show full text]
  • Power MOSFET Frequently Asked Questions and Answers Rev
    TN00008 Power MOSFET frequently asked questions and answers Rev. 5.0 — 23 June 2020 Technical note Document information Information Content Keywords TrenchMOS generation 3, generation 6, generation 9, avalanche, ruggedness, linear mode, reliability, thermal impedance, EMC, ESD, switching, thermal design Abstract This document provides answers to frequently asked questions regarding automotive MOSFET platforms, devices, functionality and reliability. It is also applicable to non-automotive applications. Nexperia TN00008 Power MOSFET frequently asked questions and answers 1. Introduction This technical note provides several important questions regarding the use of MOSFETs and the platforms required. Although it is focused on automotive applications, the principles can apply to industrial and consumer applications. It strives to provide clear answers to these questions and the reasoning behind the answers. This document is intended for guidance only. Any specific questions from customers should be discussed with Nexperia power MOSFET application engineers. 2. Gate 2.1. Q: Why is the VGS rating of Trench 6 automotive logic level MOSFETs limited to 10 V and can it be increased beyond 10 V? A: The VGS rating of 10 V given to Trench 6 logic level MOSFETs is driven by our <1 ppm failure rate targets and was rated to the best industry practices at the time. The ppm failure figures are not given in any data sheet nor are they part of AEC-Q101 qualification. In other words, two devices can both be qualified to AEC-Q101 and still have different ppm failure rate figures. Methods of defining, characterising and protecting these ratings have improved and there is now a possibility to operate beyond the given rating of 10 V.
    [Show full text]
  • A Mathematical Study of Effect of Humidity on Human Skin Temperature at Warm Environment Shiva Hari Subedi
    Journal of the Institute of Engineering Volume 16, No. 1 Published: April 2021 ISSN: 1810-3383 © TUTA j IOE j PCU Printed in Nepal A Mathematical Study of Effect of Humidity on Human Skin Temperature at Warm Environment Shiva Hari Subedi Department of Applied Sciences, Thapathali Campus, Institute of Engineering, Tribhuvan University, Nepal Corresponding Author: [email protected] Received: 2020-12-10 Revised: 2021-03-12 Accepted: 2021-03-13 Abstract: The ability of the human body to regulate its heat exchange depends on various environmental factors together with its ability to exchange heat in in-vivo tissue. The environmental factor humidity plays a crucial role in heat regulation within the human body. The heat regulation within in-vivo tissue constitutes temperature regulation in the layers of the dermal part to maintain body core temperature constant. The purpose of this article is to develop a mathematical model to study the effect of humidity on temperature regulation within the human body. The model has been developed for one dimensional steady state flow of heat in human dermal parts with appropriate boundary conditions containing the factors of effect of humidity. Matlab program has been used to simulate the model and obtain numerical results with graphs. Keywords: Thermoregulation, Pennes’ bio-heat transfer equation, human dermal parts, humidity, evaporation rate, finite element method 1. Introduction in deep structures of the body such as the liver, in comparison to temperatures of peripheral tissues. Core The human body, complicated in structure, has to temperature is normally maintained within a narrow acclimate itself to thermal environmental change within range so that essential enzymatic reactions can occur.
    [Show full text]
  • The Complete Guide to Thermal Management | CUI Devices
    THE COMPLETE GUIDE TO THERMAL MANAGEMENT TABLE OF CONTENTS 1. Executive Summary ............................................................................................................................1 2. Introduction ............................................................................................................................................ 2 2.1 Modes of Heat Transfer ............................................................................................................ 2 Conduction ........................................................................................................................................... 2 Convection .............................................................................................................................................2 Radiation ............................................................................................................................................... 3 Thermal Impedance ............................................................................................................................ 3 2.2 Cooling Devices ............................................................................................................................ 4 Heat Sinks ..............................................................................................................................................4 Fans ......................................................................................................................................................
    [Show full text]
  • Considerations for High Temperature Power Electronics Bruno Allard, Cyril Buttay, Christian Martin, Hervé Morel
    Considerations for High Temperature Power Electronics Bruno Allard, Cyril Buttay, Christian Martin, Hervé Morel To cite this version: Bruno Allard, Cyril Buttay, Christian Martin, Hervé Morel. Considerations for High Temperature Power Electronics. 18th International Symposium on Power Electronics Ee2015, Oct 2015, Novi Sad, Serbia. hal-01372146 HAL Id: hal-01372146 https://hal.archives-ouvertes.fr/hal-01372146 Submitted on 26 Sep 2016 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. Considerations for High Temperature Power Electronics B. Allard1, C. Buttay1, C. Martin2, H. Morel1 1: Univ. Lyon, Ampère, INSA Lyon, Building Leonard de Vinci, Villeurbanne, F-69621 France 2: Univ. Lyon, Ampère, Univ. Claude Bernard, Building Omega, Villeurbanne, F-69622 France Abstract: High-temperature electronics is driving large development efforts regarding many issues Obviously very high reliability is expected from these among which the objective of integration. The main systems, despite long operating life (10 - 30 years) objectives for a higher level of integration come with plus frequent deep thermal cycling (several takeoff- the constraint of increased reliability. At converter landing per day). Targeted voltage in aircraft and level, these objectives face many challenges and 3 automotive applications converge to 600V for power of them are discussed here with indication of results devices and 5V-to-30V for low-voltage circuits contributed by Ampere-lab.
    [Show full text]
  • The Engineer's Guide to Temperature Sensing
    The Engineer’s Guide to Temperature Sensing Temperature sensor design challenges and solutions ranging from thermistors to multi-channel remote-sensor ICs Table of contents Preface Chapter 4: Body temperature monitoring Message from the editors . 3 Design challenges of wearable temperature sensing . 17 Additional resources to explore . 4 Chapter 5: Fluid temperature monitoring Chapter 1: Temperature sensing fundamentals RTD replacement in heat meters using Introduction . 5 digital temperature sensors . 20 Chapter 2: System temperature monitoring Chapter 6: Threshold detection Section 2 .1 How to monitor board temperature . 7 How to protect control systems from thermal damage . 23 Section 2 .2 High-performance processor die temperature monitoring . 9 Chapter 7: Temperature compensation Chapter 3: Ambient temperature monitoring and calibration Section 3 .1 Layout considerations for accurately Section 7 .1 Temperature compensation using measuring ambient temperature . 12 high-accuracy temperature sensors . 26 Section 3 .2 Efficient cold-chain management Section 7 .2 Methods to calibrate temperature with scalable temperature sensors . 14 monitoring systems . 28 Temperature monitoring and protection 2 Texas Instruments Preface: Message from the editors Introduction • Temperature protection: Several applications In designing personal electronics, industrial or medical require action once the system goes above or below applications, engineers must address some of the same functional temperature thresholds. Temperature challenges: how to increase performance, add features sensors provide output alerts upon the detection of and shrink form factors. Along with these considerations, defined conditions to prevent system damage. It is they must carefully monitor temperature to ensure safety possible to enhance processor throughput without and protect systems and consumers from harm. compromising system reliability.
    [Show full text]
  • Thermal Analysis of Power Semiconductor Device in Steady-State Conditions
    energies Article Thermal Analysis of Power Semiconductor Device in Steady-State Conditions Adrian Plesca Faculty of Electrical Engineering, Gheorghe Asachi Technical University of Iasi, Blvd. Dimitrie Mangeron, 21–23, 700050 Iasi, Romania; [email protected]; Tel.: +40-232-278-683 Received: 27 November 2019; Accepted: 23 December 2019; Published: 24 December 2019 Abstract: Electronic devices can be damaged in an undesirable manner if the junction temperature achieves high values in order to cause thermal runaway and melting. This paper describes the mathematical model to calculate the power losses in power semiconductor devices used in bidirectional rectifier which supplies a resistive-inductive load. The obtained thermal model can be used to analyse the thermal behaviour of power semiconductors in steady-state conditions, at different values of the firing angle, direct current, air speed in the case of forced cooling, and different types of load. Also, the junction and case temperature of a power thyristor have been computed. In order to validate the proposed mathematical model, some experimental tests have been performed. The theoretical values are in good concordance with the experimental data and simulated results. Keywords: power semiconductor; temperature distribution; mathematical model; thermal modelling and simulation 1. Introduction The need for miniaturization involves mounting power semiconductors at small distances on the same heatsink, with the effect of increasing the device temperature. Even so, the maximum junction temperatures given by the manufacturer may not be exceeded for the operating conditions [1]. Measuring the operating temperature of power semiconductor devices it is of high importance for various applications, such as: power supply, wind turbines, electric vehicles, etc.
    [Show full text]
  • National Semiconductor Temperature Sensor Handbook
    National Semiconductor’s Temperature Sensor Handbook CONTENTS 1. Introduction to this Handbook .............................................................. 1 2. Temperature Sensing Techniques.......................................................... 1 RTDs........................................................................................................... 1 Thermistors ................................................................................................... 2 Thermocouples................................................................................................ 3 Silicon Temperature Sensors ................................................................................. 4 3 National’s Temperature Sensor ICs ........................................................5 3.1 Voltage-Output Analog Temperature Sensors ............................................................... 5 LM135, LM235, LM335 Kelvin Sensors........................................................................ 5 LM35, LM45 Celsius Sensors ................................................................................. 5 LM34 Fahrenheit Sensor ...................................................................................... 6 LM50 “Single Supply” Celsius Sensor........................................................................ 6 LM60 2.7V Single Supply Celsius Sensor ..................................................................... 6 3.2 Current-Output Analog Sensors ............................................................................
    [Show full text]
  • Thermal Management Solutions for Electronics
    Thermal Management Solutions for Electronics INTRODUCTION Whether in consumer electronics or high-end aerospace technology, printed wiring board assemblies for today’s increasingly complex electronics present design engineers with an ever growing need for improved, cost-effective thermal management. Many industry trends, such as cost reduction pressures, reduced footprints, and reduced weight, are counterbalanced by the need for higher circuit density to provide increased functionality to support more user “features.” The end result is an increase in heat generated—an a growing need for improved, cost-effective thermal management. Typical applications include: • Defense & Aerospace • High brightness LED’s • Automotive Electronics • Power Converters • Chemical & Process Industry instrumentation • Telecommunications Infrastructure • Cell phones & feature-rich consumer electronics • High power RF combiner/splitters & power amplifiers • Semiconductor chip packaging • Server backplanes To meet the design challenges of these diverse applications, material options have evolved to provide engineers with a broader and more versatile tool kit to optimize device cost, performance and reliability. Arlon’s electronic materials have been engineered to enhance thermal management to ultimately improve device reliability. Arlon’s broad product-line of PWB materials offers design engineers access to multiple and enhanced thermal management stratgies to meet the end-use requirements, from overall cost reduction to mission critical performance. THESE DESIGN STRATEGIES INCLUDE: – Many designs today continually push limits for heattransfer, Removing the Heat resulting in high device operating temperatures. Newer Arlon PCB materials offer increased thermal conductivity to reduce peak operating temperatures and improve component life. – For over 30 years, high temperature applications have used Beating the Heat Polyimide laminate & prepreg systems to provide device reliability in operating envi - ronments exceeding 200°C.
    [Show full text]